GB1070303A – Production method of semiconductor devices
– Google Patents
GB1070303A – Production method of semiconductor devices
– Google Patents
Production method of semiconductor devices
Info
Publication number
GB1070303A
GB1070303A
GB5234965A
GB5234965A
GB1070303A
GB 1070303 A
GB1070303 A
GB 1070303A
GB 5234965 A
GB5234965 A
GB 5234965A
GB 5234965 A
GB5234965 A
GB 5234965A
GB 1070303 A
GB1070303 A
GB 1070303A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
deposition
metal
stage
Prior art date
1964-12-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5234965A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1964-12-17
Filing date
1965-12-09
Publication date
1967-06-01
1965-12-09
Application filed by Hitachi Ltd
filed
Critical
Hitachi Ltd
1967-06-01
Publication of GB1070303A
publication
Critical
patent/GB1070303A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
F16D—COUPLINGS FOR TRANSMITTING ROTATION; CLUTCHES; BRAKES
F16D33/00—Rotary fluid couplings or clutches of the hydrokinetic type
F16D33/06—Rotary fluid couplings or clutches of the hydrokinetic type controlled by changing the amount of liquid in the working circuit
F16D33/08—Rotary fluid couplings or clutches of the hydrokinetic type controlled by changing the amount of liquid in the working circuit by devices incorporated in the fluid coupling, with or without remote control
F16D33/14—Rotary fluid couplings or clutches of the hydrokinetic type controlled by changing the amount of liquid in the working circuit by devices incorporated in the fluid coupling, with or without remote control consisting of shiftable or adjustable scoops
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L24/02—Bonding areas ; Manufacturing methods related thereto
H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/02—Bonding areas; Manufacturing methods related thereto
H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/02—Bonding areas; Manufacturing methods related thereto
H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
H01L2224/0554—External layer
H01L2224/0555—Shape
H01L2224/05556—Shape in side view
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/02—Bonding areas; Manufacturing methods related thereto
H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
H01L2224/0554—External layer
H01L2224/05599—Material
H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
H01L2224/05624—Aluminium [Al] as principal constituent
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
H01L2224/45001—Core members of the connector
H01L2224/4501—Shape
H01L2224/45012—Cross-sectional shape
H01L2224/45015—Cross-sectional shape being circular
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
H01L2224/45001—Core members of the connector
H01L2224/45099—Material
H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
H01L2224/45124—Aluminium (Al) as principal constituent
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
H01L2224/45001—Core members of the connector
H01L2224/45099—Material
H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
H01L2224/45144—Gold (Au) as principal constituent
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H01L2224/484—Connecting portions
H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
H01L2224/852—Applying energy for connecting
H01L2224/85201—Compression bonding
H01L2224/85203—Thermocompression bonding
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L24/42—Wire connectors; Manufacturing methods related thereto
H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/013—Alloys
H01L2924/0132—Binary Alloys
H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S228/00—Metal fusion bonding
Y10S228/903—Metal to nonmetal
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/942—Masking
Y10S438/948—Radiation resist
Y10S438/951—Lift-off
Abstract
1,070,303. Semi-conductor devices. HITACHI Ltd. Dec. 9, 1965 [Dec. 17, 1964]. No. 52349/65. Heading H1K. Metal is deposited from the vapour phase through a photo-sensitive resist mask on to a semi-conductor in two stages, the second stage at a lower temperature than the first. To bond a deposited metal to a semi-conductor the temperature of deposition must be in the neighbourhood of the metal-semi-conductor eutectic. But to prevent contamination of the surface of the deposited metal by carbonized resist, deposition should occur at a temperature below that at which the resist volatilizes or carbonizes. These considerations define the temperatures of the two stages, which for deposition of aluminium on silicone are 550‹ and 200‹ C. respectively for periods sufficient to deposit 0.2 to 1.0Á in the first stage and up to 0.2Á in the second. The clean deposit of the second stage provides for ready attachment of wire terminals, e.g. of aluminium or gold, which may be attached to it by thermocompression bonding. A complete process, otherwise conventional, for producing a planar transistor is described in the Specification with reference to Fig. 2 (not shown).
GB5234965A
1964-12-17
1965-12-09
Production method of semiconductor devices
Expired
GB1070303A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
JP7074064
1964-12-17
Publications (1)
Publication Number
Publication Date
GB1070303A
true
GB1070303A
(en)
1967-06-01
Family
ID=13440196
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB5234965A
Expired
GB1070303A
(en)
1964-12-17
1965-12-09
Production method of semiconductor devices
Country Status (4)
Country
Link
US
(1)
US3412456A
(en)
DE
(1)
DE1521287A1
(en)
GB
(1)
GB1070303A
(en)
NL
(2)
NL6516486A
(en)
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2014594A1
(en)
*
1968-07-15
1970-04-17
Ibm
FR2022335A1
(en)
*
1968-10-31
1970-07-31
Gen Electric
FR2203175A1
(en)
*
1972-10-16
1974-05-10
Matsushita Electric Ind Co Ltd
Families Citing this family (9)
* Cited by examiner, † Cited by third party
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Priority date
Publication date
Assignee
Title
US3532540A
(en)
*
1967-10-26
1970-10-06
Ncr Co
Differential adhesion process for making high resolution thin film patterns
US3623961A
(en)
*
1968-01-12
1971-11-30
Philips Corp
Method of providing an electric connection to a surface of an electronic device and device obtained by said method
US3767491A
(en)
*
1970-10-27
1973-10-23
Cogar Corp
Process for etching metals employing ultrasonic vibration
US3784379A
(en)
*
1971-12-02
1974-01-08
Itt
Method of laminating one or more materials with a base structure for use in a high vacuum electron tube and method of masking the base preparatory to lamination
US4451968A
(en)
*
1981-09-08
1984-06-05
Texas Instruments Incorporated
Method and device for providing an ohmic contact of high resistance on a semiconductor at low temperatures
US5326428A
(en)
1993-09-03
1994-07-05
Micron Semiconductor, Inc.
Method for testing semiconductor circuitry for operability and method of forming apparatus for testing semiconductor circuitry for operability
US5478779A
(en)
1994-03-07
1995-12-26
Micron Technology, Inc.
Electrically conductive projections and semiconductor processing method of forming same
US6797586B2
(en)
*
2001-06-28
2004-09-28
Koninklijke Philips Electronics N.V.
Silicon carbide schottky barrier diode and method of making
FR2946462B1
(en)
*
2009-06-09
2011-07-01
Commissariat Energie Atomique
METHOD FOR PRODUCING AT LEAST ONE MICROCOMPONENT WITH A SINGLE MASK
Family Cites Families (8)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US2849583A
(en)
*
1952-07-19
1958-08-26
Pritikin Nathan
Electrical resistor and method and apparatus for producing resistors
US2879188A
(en)
*
1956-03-05
1959-03-24
Westinghouse Electric Corp
Processes for making transistors
US2994621A
(en)
*
1956-03-29
1961-08-01
Baldwin Piano Co
Semi-conductive films and methods of producing them
USB778836I5
(en)
*
1958-12-08
US3087239A
(en)
*
1959-06-19
1963-04-30
Western Electric Co
Methods of bonding leads to semiconductive devices
US3230109A
(en)
*
1961-12-18
1966-01-18
Bell Telephone Labor Inc
Vapor deposition method and apparatus
US3170810A
(en)
*
1962-05-24
1965-02-23
Western Electric Co
Methods of and apparatus for forming substances on preselected areas of substrates
US3281815A
(en)
*
1963-07-29
1966-10-25
Ford Motor Co
Liquid level sensing system
0
NL
NL132313D
patent/NL132313C/xx
active
1965
1965-12-09
GB
GB5234965A
patent/GB1070303A/en
not_active
Expired
1965-12-09
US
US51267565
patent/US3412456A/en
not_active
Expired – Lifetime
1965-12-15
DE
DE19651521287
patent/DE1521287A1/en
active
Pending
1965-12-17
NL
NL6516486A
patent/NL6516486A/xx
unknown
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2014594A1
(en)
*
1968-07-15
1970-04-17
Ibm
FR2022335A1
(en)
*
1968-10-31
1970-07-31
Gen Electric
FR2203175A1
(en)
*
1972-10-16
1974-05-10
Matsushita Electric Ind Co Ltd
Also Published As
Publication number
Publication date
NL132313C
(en)
1900-01-01
NL6516486A
(en)
1966-06-20
US3412456A
(en)
1968-11-26
DE1521287A1
(en)
1969-05-14
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