GB1078866A

GB1078866A – Improvements in or relating to methods of providing surface layers on a carrier
– Google Patents

GB1078866A – Improvements in or relating to methods of providing surface layers on a carrier
– Google Patents
Improvements in or relating to methods of providing surface layers on a carrier

Info

Publication number
GB1078866A

GB1078866A
GB38575/64A
GB3857564A
GB1078866A
GB 1078866 A
GB1078866 A
GB 1078866A
GB 38575/64 A
GB38575/64 A
GB 38575/64A
GB 3857564 A
GB3857564 A
GB 3857564A
GB 1078866 A
GB1078866 A
GB 1078866A
Authority
GB
United Kingdom
Prior art keywords
layer
carrier
layers
silver
pict
Prior art date
1963-09-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB38575/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Philips Electronics UK Ltd

Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-09-25
Filing date
1964-09-22
Publication date
1967-08-09

1964-09-22
Application filed by Philips Electronic and Associated Industries Ltd
filed
Critical
Philips Electronic and Associated Industries Ltd

1967-08-09
Publication of GB1078866A
publication
Critical
patent/GB1078866A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

239000002344
surface layer
Substances

0.000
title
1

239000000463
material
Substances

0.000
abstract
6

BQCADISMDOOEFD-UHFFFAOYSA-N
Silver
Chemical compound

[Ag]
BQCADISMDOOEFD-UHFFFAOYSA-N
0.000
abstract
4

229910052709
silver
Inorganic materials

0.000
abstract
4

239000004332
silver
Substances

0.000
abstract
4

RYGMFSIKBFXOCR-UHFFFAOYSA-N
Copper
Chemical compound

[Cu]
RYGMFSIKBFXOCR-UHFFFAOYSA-N
0.000
abstract
3

229910052802
copper
Inorganic materials

0.000
abstract
3

239000010949
copper
Substances

0.000
abstract
3

238000010521
absorption reaction
Methods

0.000
abstract
2

229910052738
indium
Inorganic materials

0.000
abstract
2

APFVFJFRJDLVQX-UHFFFAOYSA-N
indium atom
Chemical compound

[In]
APFVFJFRJDLVQX-UHFFFAOYSA-N
0.000
abstract
2

239000005083
Zinc sulfide
Substances

0.000
abstract
1

229920000180
alkyd
Polymers

0.000
abstract
1

239000004411
aluminium
Substances

0.000
abstract
1

229910052782
aluminium
Inorganic materials

0.000
abstract
1

XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound

[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
abstract
1

229910052787
antimony
Inorganic materials

0.000
abstract
1

WATWJIUSRGPENY-UHFFFAOYSA-N
antimony atom
Chemical compound

[Sb]
WATWJIUSRGPENY-UHFFFAOYSA-N
0.000
abstract
1

239000011230
binding agent
Substances

0.000
abstract
1

CJOBVZJTOIVNNF-UHFFFAOYSA-N
cadmium sulfide
Chemical compound

[Cd]=S
CJOBVZJTOIVNNF-UHFFFAOYSA-N
0.000
abstract
1

229910052980
cadmium sulfide
Inorganic materials

0.000
abstract
1

238000005247
gettering
Methods

0.000
abstract
1

239000011521
glass
Substances

0.000
abstract
1

PCHJSUWPFVWCPO-UHFFFAOYSA-N
gold
Chemical compound

[Au]
PCHJSUWPFVWCPO-UHFFFAOYSA-N
0.000
abstract
1

229910052737
gold
Inorganic materials

0.000
abstract
1

239000010931
gold
Substances

0.000
abstract
1

238000010438
heat treatment
Methods

0.000
abstract
1

239000004065
semiconductor
Substances

0.000
abstract
1

229910052714
tellurium
Inorganic materials

0.000
abstract
1

PORWMNRCUJJQNO-UHFFFAOYSA-N
tellurium atom
Chemical compound

[Te]
PORWMNRCUJJQNO-UHFFFAOYSA-N
0.000
abstract
1

DRDVZXDWVBGGMH-UHFFFAOYSA-N
zinc;sulfide
Chemical compound

[S-2].[Zn+2]
DRDVZXDWVBGGMH-UHFFFAOYSA-N
0.000
abstract
1

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof

H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70

H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Abstract

A carrier 1, 2 is provided with two contiguou or partly overlapping layers 5 and 6, Figs. 1 and 2, of different materials which are such that a gap 8, Fig. 4, is formed between the two layers by the absorption of the material of one layer 6, near the boundary of the other layer 5, by an adjacent portion of the carrier and/or of the other layer 5. The material of the layer 5 has a gettering capacity for the material of the layer 6, or enhances absorption of the material of the layer 6 by the carrier, these actions being in most cases initiated by heating, which may be assisted by the passage of an electric current. In the embodiments described, the layers 5 and 6 are vapour-deposited and form electrodes of semi-conductor devices, the carrier consisting of a vapour-deposited layer 2 of cadmium sulphide or zinc sulphide on a glass plate 1. Suitable pairs of materials for the layers 5 and 6 include aluminium and antimony, copper and indium, tellurium and indium, silver and copper, silver paste (comprising finely-divided silver in an organic binder including alkyd resins) and copper, and silver and gold.

GB38575/64A
1963-09-25
1964-09-22
Improvements in or relating to methods of providing surface layers on a carrier

Expired

GB1078866A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

NL63298353A

NL140655B
(en)

1963-09-25
1963-09-25

PROCESS FOR THE APPLICATION OF SURFACE LAYERS ON A SUPPORT, PREFERRED FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE.

Publications (1)

Publication Number
Publication Date

GB1078866A
true

GB1078866A
(en)

1967-08-09

Family
ID=19755085
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB38575/64A
Expired

GB1078866A
(en)

1963-09-25
1964-09-22
Improvements in or relating to methods of providing surface layers on a carrier

Country Status (12)

Country
Link

US
(1)

US3343254A
(en)

JP
(1)

JPS417175B1
(en)

AT
(1)

AT250440B
(en)

BE
(1)

BE653469A
(en)

CH
(1)

CH454565A
(en)

DE
(1)

DE1298832B
(en)

DK
(1)

DK113658B
(en)

ES
(1)

ES304286A1
(en)

FR
(1)

FR1408613A
(en)

GB
(1)

GB1078866A
(en)

NL
(2)

NL140655B
(en)

SE
(1)

SE317448B
(en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

GB1209914A
(en)

*

1967-03-29
1970-10-21
Marconi Co Ltd
Improvements in or relating to semi-conductor devices

US4017890A
(en)

*

1975-10-24
1977-04-12
International Business Machines Corporation
Intermetallic compound layer in thin films for improved electromigration resistance

JPS5636166A
(en)

*

1979-08-31
1981-04-09
Toshiba Corp
Nonvolatile semiconductor memory

Family Cites Families (2)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US2911539A
(en)

*

1957-12-18
1959-11-03
Bell Telephone Labor Inc
Photocell array

US3215570A
(en)

*

1963-03-15
1965-11-02
Texas Instruments Inc
Method for manufacture of semiconductor devices

0

NL
NL298353D
patent/NL298353A/xx
unknown

1963

1963-09-25
NL
NL63298353A
patent/NL140655B/en
unknown

1964

1964-02-20
US
US346172A
patent/US3343254A/en
not_active
Expired – Lifetime

1964-09-21
DK
DK463764AA
patent/DK113658B/en
unknown

1964-09-22
GB
GB38575/64A
patent/GB1078866A/en
not_active
Expired

1964-09-22
CH
CH1229264A
patent/CH454565A/en
unknown

1964-09-22
SE
SE11390/64A
patent/SE317448B/xx
unknown

1964-09-22
AT
AT810364A
patent/AT250440B/en
active

1964-09-23
ES
ES0304286A
patent/ES304286A1/en
not_active
Expired

1964-09-23
DE
DEN25560A
patent/DE1298832B/en
not_active
Withdrawn

1964-09-23
BE
BE653469A
patent/BE653469A/xx
unknown

1964-09-23
FR
FR988986A
patent/FR1408613A/en
not_active
Expired

1964-09-25
JP
JP5495964A
patent/JPS417175B1/ja
active
Pending

Also Published As

Publication number
Publication date

JPS417175B1
(en)

1966-04-20

NL140655B
(en)

1973-12-17

SE317448B
(en)

1969-11-17

DE1298832B
(en)

1969-07-03

NL298353A
(en)

US3343254A
(en)

1967-09-26

BE653469A
(en)

1965-03-23

AT250440B
(en)

1966-11-10

CH454565A
(en)

1968-04-15

ES304286A1
(en)

1965-03-16

FR1408613A
(en)

1965-08-13

DK113658B
(en)

1969-04-14

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