GB1081376A – Method of producing a semiconductor device
– Google Patents
GB1081376A – Method of producing a semiconductor device
– Google Patents
Method of producing a semiconductor device
Info
Publication number
GB1081376A
GB1081376A
GB45469/65A
GB4546965A
GB1081376A
GB 1081376 A
GB1081376 A
GB 1081376A
GB 45469/65 A
GB45469/65 A
GB 45469/65A
GB 4546965 A
GB4546965 A
GB 4546965A
GB 1081376 A
GB1081376 A
GB 1081376A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
mesa
oct
leave
Prior art date
1964-10-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45469/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1964-10-31
Filing date
1965-10-27
Publication date
1967-08-31
1965-10-27
Application filed by Telefunken Patentverwertungs GmbH
filed
Critical
Telefunken Patentverwertungs GmbH
1967-08-31
Publication of GB1081376A
publication
Critical
patent/GB1081376A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/02—Contacts, special
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/043—Dual dielectric
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/049—Equivalence and options
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/145—Shaped junctions
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/914—Doping
Y10S438/921—Nonselective diffusion
Abstract
1,081,376. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. Oct. 27, 1965 [Oct. 31, 1964], No. 45469/65. Heading H1K. Material is removed from a semi-conductor body to leave a mesa or similar upstanding portion, the sidefaces of which are then masked (e.g. by an oxide layer 9 as shown, Fig. 4) to leave uncovered the whole of the upper face 11 into which an impurity is diffused. A plane PN junction extending across the mesa or similar portion is thereby produced. Either before or after the diffusion process, the space left by the removal of semi-conductor material may be filled with insulating material 10, such as quartz glass, to provide a plane support for conducting paths 12.
GB45469/65A
1964-10-31
1965-10-27
Method of producing a semiconductor device
Expired
GB1081376A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DET0027337
1964-10-31
Publications (1)
Publication Number
Publication Date
GB1081376A
true
GB1081376A
(en)
1967-08-31
Family
ID=25999956
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB45469/65A
Expired
GB1081376A
(en)
1964-10-31
1965-10-27
Method of producing a semiconductor device
Country Status (5)
Country
Link
US
(1)
US3445303A
(en)
JP
(1)
JPS4917914B1
(en)
DE
(1)
DE1439737B2
(en)
FR
(1)
FR1451676A
(en)
GB
(1)
GB1081376A
(en)
Families Citing this family (12)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL153374B
(en)
*
1966-10-05
1977-05-16
Philips Nv
PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE PROVIDED WITH AN OXIDE LAYER AND SEMI-CONDUCTOR DEVICE MANUFACTURED ACCORDING TO THE PROCEDURE.
USRE28653E
(en)
*
1968-04-23
1975-12-16
Method of fabricating semiconductor devices
FR2156420A2
(en)
*
1971-04-08
1973-06-01
Thomson Csf
Beam-lead mesa diode prodn – for high reliability
IT963303B
(en)
*
1971-07-29
1974-01-10
Licentia Gmbh
SEMICONDUCTOR LASER
US3912556A
(en)
*
1971-10-27
1975-10-14
Motorola Inc
Method of fabricating a scannable light emitting diode array
US3878553A
(en)
*
1972-12-26
1975-04-15
Texas Instruments Inc
Interdigitated mesa beam lead diode and series array thereof
JPS5631898B2
(en)
*
1974-01-11
1981-07-24
GB1531238A
(en)
*
1975-01-09
1978-11-08
Standard Telephones Cables Ltd
Injection lasers
FR2328286A1
(en)
*
1975-10-14
1977-05-13
Thomson Csf
PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES WITH VERY LOW THERMAL RESISTANCE, AND DEVICES OBTAINED BY THIS PROCEDURE
US4199384A
(en)
*
1979-01-29
1980-04-22
Rca Corporation
Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands
JPH02125906A
(en)
*
1988-11-01
1990-05-14
Yoshiaki Tsunoda
Exhaust gas flow acceleration device for internal combustion engine
JPH06252400A
(en)
*
1992-12-28
1994-09-09
Sony Corp
Fabrication of lateral insulated gate type field effect transistor
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL125999C
(en)
*
1958-07-17
US3040218A
(en)
*
1959-03-10
1962-06-19
Hoffman Electronics Corp
Constant current devices
US3194699A
(en)
*
1961-11-13
1965-07-13
Transitron Electronic Corp
Method of making semiconductive devices
US3294600A
(en)
*
1962-11-26
1966-12-27
Nippon Electric Co
Method of manufacture of semiconductor elements
1964
1964-10-31
DE
DE19641439737
patent/DE1439737B2/en
not_active
Withdrawn
1965
1965-10-18
FR
FR35270A
patent/FR1451676A/en
not_active
Expired
1965-10-24
US
US504685A
patent/US3445303A/en
not_active
Expired – Lifetime
1965-10-27
GB
GB45469/65A
patent/GB1081376A/en
not_active
Expired
1965-11-01
JP
JP40066865A
patent/JPS4917914B1/ja
active
Pending
Also Published As
Publication number
Publication date
JPS4917914B1
(en)
1974-05-04
DE1439737A1
(en)
1969-06-26
US3445303A
(en)
1969-05-20
DE1439737B2
(en)
1970-05-06
FR1451676A
(en)
1966-01-07
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