GB1112140A

GB1112140A – A method and apparatus for the continuous production of semiconductor materials
– Google Patents

GB1112140A – A method and apparatus for the continuous production of semiconductor materials
– Google Patents
A method and apparatus for the continuous production of semiconductor materials

Info

Publication number
GB1112140A

GB1112140A
GB372367A
GB372367A
GB1112140A
GB 1112140 A
GB1112140 A
GB 1112140A
GB 372367 A
GB372367 A
GB 372367A
GB 372367 A
GB372367 A
GB 372367A
GB 1112140 A
GB1112140 A
GB 1112140A
Authority
GB
United Kingdom
Prior art keywords
chamber
deposited
thin rod
silicon
section
Prior art date
1966-05-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB372367A
Inventor
Edward Lane Kern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Dow Silicones Corp

Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1966-05-27
Filing date
1967-01-25
Publication date
1968-05-01

1967-01-25
Application filed by Dow Corning Corp
filed
Critical
Dow Corning Corp

1968-05-01
Publication of GB1112140A
publication
Critical
patent/GB1112140A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method

C30B15/002—Continuous growth

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B33/00—Silicon; Compounds thereof

C01B33/02—Silicon

C01B33/021—Preparation

C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material

C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

C—CHEMISTRY; METALLURGY

C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS

C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS

C22B41/00—Obtaining germanium

C—CHEMISTRY; METALLURGY

C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS

C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS

C22B59/00—Obtaining rare earth metals

C—CHEMISTRY; METALLURGY

C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL

C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL

C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes

C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating

C23C16/54—Apparatus specially adapted for continuous coating

C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Abstract

A thin rod of semi-conductor material is continuously passed through a chamber in which its diameter is progressively increased by pyrolytic deposition from a gas. The thin rod may be formed by pulling from a melt or by extrusion and may have a round or polygonol cross-section. Silicon is deposited from a mixture of trichlorosilane and hydrogen on to a silicon rod heated to about 1150 DEG C., germanium is deposited from germanium tetrachloride at about 750 DEG C. and silicon carbide is deposited at about 1300 DEG C. A thin rod 17 is pulled from a molten zone 16 through a chamber 22 wherein its cross-section is progressively increased by pyrolytic deposition. A radiant heater 23, or alternatively an induction heater, of upwardly increasing intensity is situated between chamber 22 and a quartz liner 29. Chamber 22 is provided with gas inlets 31 and 37, gas outlet 36 and baffles 32-34.ALSO: A thin rod of semi-conductor material is continuously passed through a chamber in which its diameter is progressively increased by pyrolytic deposition from a gas. The thin rod may be formed by pulling from a melt or by extrusion and may have a round or polygonal cross-section. Silicon is deposited from a mixture of trichlorosilane and hydrogen on to a silicon rod heated to about 1150 DEG C., germanium is deposited from germanium tetrachloride at about 50 DEG C. and silicon carbide is deposited at about 1300 DEG C. A thin rod 17 is pulled from a molten zone 16 through a chamber 22 wherein its cross-section is progressively increased by pyrolytic deposition. A radiant heater 23, or alternatively an induction heater, of upwardly increasing intensity is situated between chamber 22 and a quartz liner 29. Chamber 22 is provided with gas inlets 31 and 37, gas outlet 36 and baffles 32-34.

GB372367A
1966-05-27
1967-01-25
A method and apparatus for the continuous production of semiconductor materials

Expired

GB1112140A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US55335766A

1966-05-27
1966-05-27

Publications (1)

Publication Number
Publication Date

GB1112140A
true

GB1112140A
(en)

1968-05-01

Family
ID=24209104
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB372367A
Expired

GB1112140A
(en)

1966-05-27
1967-01-25
A method and apparatus for the continuous production of semiconductor materials

Country Status (3)

Country
Link

BE
(1)

BE699058A
(en)

GB
(1)

GB1112140A
(en)

NL
(1)

NL6703038A
(en)

Cited By (5)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

EP0045191A1
(en)

*

1980-07-28
1982-02-03
Monsanto Company
Process and apparatus for the production of semiconductor bodies

EP0045192A2
(en)

*

1980-07-28
1982-02-03
Monsanto Company
Process and apparatus for preparing bodies of semiconductor material

EP0045600A1
(en)

*

1980-07-28
1982-02-10
Monsanto Company
Improved method for producing semiconductor grade silicon

EP0045599A1
(en)

*

1980-07-28
1982-02-10
Monsanto Company
Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition

GB2155959A
(en)

*

1984-03-14
1985-10-02
Secr Defence
Chemical vapour deposition

1967

1967-01-25
GB
GB372367A
patent/GB1112140A/en
not_active
Expired

1967-02-27
NL
NL6703038A
patent/NL6703038A/xx
unknown

1967-05-26
BE
BE699058D
patent/BE699058A/xx
unknown

Cited By (6)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

EP0045191A1
(en)

*

1980-07-28
1982-02-03
Monsanto Company
Process and apparatus for the production of semiconductor bodies

EP0045192A2
(en)

*

1980-07-28
1982-02-03
Monsanto Company
Process and apparatus for preparing bodies of semiconductor material

EP0045600A1
(en)

*

1980-07-28
1982-02-10
Monsanto Company
Improved method for producing semiconductor grade silicon

EP0045192A3
(en)

*

1980-07-28
1982-02-10
Monsanto Company
Process and apparatus for preparing bodies of semiconductor material

EP0045599A1
(en)

*

1980-07-28
1982-02-10
Monsanto Company
Process and apparatus for the production of silicon bodies by continuous chemical vapor deposition

GB2155959A
(en)

*

1984-03-14
1985-10-02
Secr Defence
Chemical vapour deposition

Also Published As

Publication number
Publication date

BE699058A
(en)

1967-11-27

NL6703038A
(en)

1967-11-28

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