GB1137732A – Process and apparatus for the fabrication of synthetic ruby, in particular for lasers
– Google Patents
GB1137732A – Process and apparatus for the fabrication of synthetic ruby, in particular for lasers
– Google Patents
Process and apparatus for the fabrication of synthetic ruby, in particular for lasers
Info
Publication number
GB1137732A
GB1137732A
GB5949/66A
GB594966A
GB1137732A
GB 1137732 A
GB1137732 A
GB 1137732A
GB 5949/66 A
GB5949/66 A
GB 5949/66A
GB 594966 A
GB594966 A
GB 594966A
GB 1137732 A
GB1137732 A
GB 1137732A
Authority
GB
United Kingdom
Prior art keywords
tantalum
screens
rod
heater
ruby
Prior art date
1965-02-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5949/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe dElectro Chimie dElectro Metallurgie et des Acieries Electriques Dugine SA SECEMAU
Original Assignee
Societe dElectro Chimie dElectro Metallurgie et des Acieries Electriques Dugine SA SECEMAU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1965-02-10
Filing date
1966-02-10
Publication date
1968-12-27
1965-02-10
Priority claimed from FR5078A
external-priority
patent/FR1432731A/en
1966-01-11
Priority claimed from FR45551A
external-priority
patent/FR89503E/en
1966-02-10
Application filed by Societe dElectro Chimie dElectro Metallurgie et des Acieries Electriques Dugine SA SECEMAU
filed
Critical
Societe dElectro Chimie dElectro Metallurgie et des Acieries Electriques Dugine SA SECEMAU
1968-12-27
Publication of GB1137732A
publication
Critical
patent/GB1137732A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
C30B11/10—Solid or liquid components, e.g. Verneuil method
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
Y10T117/10—Apparatus
Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
Y10T117/1028—Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor [e.g., Verneuil method]
Abstract
1,137,732. Crystallizing ruby. SOCIETE D’ELECTRO-CHIMIE, D’ELECTRO METALLURGIE ET DES ACIERIES ELECTRIQUES D’UGINE. 10 Feb., 1966 [10 Feb., 1965; 11 Jan., 1966], No. 5949/66. Heading B1S. In a process of crystallization e.g. of ruby, by withdrawing a monocrystalline rod downwards from a molten zone which is replenished from above, the process is effected in a watercooled chamber 1 having a controlled atmosphere, observation window and fusion and cooling chambers which are separated by a thermal screen 9 and are surrounded at the sides and from above by a plurality of thermal screens 11 and 12. The screens may be of tantalum, molybdenum or tungsten. Further control is effected by supplying resistance heafing to the walls of the cooling chamber, which may be of tantalum. The fusion chamber contains a resistance heater 7 in the form of a hollow truncated cone which may be of tantalum or tungsten. In a modification, the heater may be in the form of a spiral. The feed material is fed through orifices in screens 12 and heater 7 to the molten zone which is situated at the tip of a rod 4 which is withdrawn through an orifice in screen 9. Feed material in the form of spheres having a diameter of 0.1-2 mm -may be fed individually from a supply in a cap 34 by means of a rotary device (Fig. 4, not-shown) through a preheating device situated in the orifices of screens 12. The preheating device may provide a zig-zag (Fig. 4, not shown) or spiral (Fig. 5, not shown) path for the spheres. In a modification (Fig. 6, not shown), a feed rod 82 and holder 80 are passed through an orifice in cap 34 and a tube 70 of molybdenum or tantalum having a restriction 72 for centering rod 82.
GB5949/66A
1965-02-10
1966-02-10
Process and apparatus for the fabrication of synthetic ruby, in particular for lasers
Expired
GB1137732A
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
FR5078A
FR1432731A
(en)
1965-02-10
1965-02-10
Method and device for manufacturing synthetic ruby, in particular for lasers
FR45551A
FR89503E
(en)
1966-01-11
1966-01-11
Method and device for manufacturing synthetic ruby, in particular for lasers
Publications (1)
Publication Number
Publication Date
GB1137732A
true
GB1137732A
(en)
1968-12-27
Family
ID=26161954
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB5949/66A
Expired
GB1137732A
(en)
1965-02-10
1966-02-10
Process and apparatus for the fabrication of synthetic ruby, in particular for lasers
Country Status (7)
Country
Link
US
(1)
US3519394A
(en)
JP
(1)
JPS5113751B1
(en)
BE
(1)
BE676042A
(en)
CH
(1)
CH457373A
(en)
DE
(1)
DE1544278B2
(en)
GB
(1)
GB1137732A
(en)
NL
(1)
NL6601707A
(en)
Families Citing this family (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3798007A
(en)
*
1969-12-05
1974-03-19
Ibm
Method and apparatus for producing large diameter monocrystals
DE2542886B2
(en)
*
1975-09-25
1978-09-21
Siemens Ag, 1000 Berlin Und 8000 Muenchen
Device for powder delivery during crystal growth according to Verneuil
JPS62128309U
(en)
*
1986-02-07
1987-08-14
US5665011A
(en)
*
1996-11-22
1997-09-09
Thomas; Robert
Golf putter head
Family Cites Families (15)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US1653022A
(en)
*
1924-07-12
1927-12-20
Westinghouse Electric & Mfg Co
Apparatus for the production of artificial jewels or precious stones
US2525261A
(en)
*
1946-09-30
1950-10-10
James P Henderson
Refrigerated ball dispenser
US2690062A
(en)
*
1949-12-21
1954-09-28
Union Carbide & Carbon Corp
Synthetic corundum crystals and process for making same
GB697419A
(en)
*
1951-07-13
1953-09-23
Gen Electric Co Ltd
Improvements in or relating to apparatus for manufacturing synthetic jewels
DE1188042B
(en)
*
1954-01-29
1965-03-04
Siemens Ag
Device for crucible zone melting of a rod-shaped crystalline semiconductor body
DE1017795B
(en)
*
1954-05-25
1957-10-17
Siemens Ag
Process for the production of the purest crystalline substances, preferably semiconductor substances
US3173765A
(en)
*
1955-03-18
1965-03-16
Itt
Method of making crystalline silicon semiconductor material
US2792287A
(en)
*
1956-04-04
1957-05-14
Nat Lead Co
Synthetic rutile crystal and method for making same
US2879189A
(en)
*
1956-11-21
1959-03-24
Shockley William
Method for growing junction semi-conductive devices
US2965456A
(en)
*
1956-12-31
1960-12-20
Union Carbide Corp
Process for crystalline growth employing collimated electrical energy
US3086850A
(en)
*
1959-06-17
1963-04-23
Itt
Method and means for growing and treating crystals
US3154384A
(en)
*
1960-04-13
1964-10-27
Texas Instruments Inc
Apparatus for growing compound semiconductor crystal
DE1188555B
(en)
*
1960-05-10
1965-03-11
Wacker Chemie Gmbh
Process for the production of highly pure crystalline bodies from nitrides, phosphides or arsenides of III. Main group of the periodic table
US3342559A
(en)
*
1964-04-27
1967-09-19
Westinghouse Electric Corp
Apparatus for producing dendrites
US3337303A
(en)
*
1965-03-01
1967-08-22
Elmat Corp
Crystal growing apparatus
1966
1966-02-04
BE
BE676042D
patent/BE676042A/xx
unknown
1966-02-08
DE
DE1966S0101889
patent/DE1544278B2/en
active
Granted
1966-02-10
CH
CH187866A
patent/CH457373A/en
unknown
1966-02-10
JP
JP41007928A
patent/JPS5113751B1/ja
active
Pending
1966-02-10
GB
GB5949/66A
patent/GB1137732A/en
not_active
Expired
1966-02-10
NL
NL6601707A
patent/NL6601707A/xx
unknown
1967
1967-01-09
US
US615287A
patent/US3519394A/en
not_active
Expired – Lifetime
Also Published As
Publication number
Publication date
DE1544278B2
(en)
1976-04-29
NL6601707A
(en)
1966-08-11
JPS5113751B1
(en)
1976-05-01
CH457373A
(en)
1968-06-15
US3519394A
(en)
1970-07-07
BE676042A
(en)
1966-06-16
DE1544278A1
(en)
1970-05-21
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