GB1149606A – Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
– Google Patents
GB1149606A – Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
– Google Patents
Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
Info
Publication number
GB1149606A
GB1149606A
GB4779/68A
GB477968A
GB1149606A
GB 1149606 A
GB1149606 A
GB 1149606A
GB 4779/68 A
GB4779/68 A
GB 4779/68A
GB 477968 A
GB477968 A
GB 477968A
GB 1149606 A
GB1149606 A
GB 1149606A
Authority
GB
United Kingdom
Prior art keywords
aluminium
nickel
layer
wafer
resistant
Prior art date
1967-02-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4779/68A
Inventor
Robert Allen Carnes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-02-27
Filing date
1968-01-30
Publication date
1969-04-23
1968-01-30
Application filed by Motorola Inc
filed
Critical
Motorola Inc
1969-04-23
Publication of GB1149606A
publication
Critical
patent/GB1149606A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
H01L2224/8319—Arrangement of the layer connectors prior to mounting
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
H01L2224/838—Bonding techniques
H01L2224/83801—Soldering or alloying
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01006—Carbon [C]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01013—Aluminum [Al]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01019—Potassium [K]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01029—Copper [Cu]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/0103—Zinc [Zn]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01047—Silver [Ag]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01072—Hafnium [Hf]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01074—Tungsten [W]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01078—Platinum [Pt]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01079—Gold [Au]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01082—Lead [Pb]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/013—Alloys
H01L2924/014—Solder alloys
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/10—Details of semiconductor or other solid state devices to be connected
H01L2924/11—Device type
H01L2924/14—Integrated circuits
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/30—Technical effects
H01L2924/35—Mechanical effects
H01L2924/351—Thermal stress
Abstract
1,149,606. Semi-conductor devices. MOTOROLA Inc. 30 Jan., 1968 [27 Feb., 1967], No. 4779/68. Heading H1K. A silicon wafer for a diode, transistor, or integrated circuit may be soft-soldered to a heat sink of copper or of nickel-plated aluminium after it (the wafer) has been coated with adherent layers of aluminium and nickel and with a very thin anti-tarnish layer of gold. To make such a structure, aluminium may be evaporated on to and sintered or alloyed to the silicon wafer; a thin layer of nickel is then formed on the aluminium by evaporation or by electroless plating (for example the surface is cleaned with a zinc solution and then immersed in a nickel solution), the layer then being sintered to the aluminium and a second nickel layer plated on. The gold layer is then applied by evaporation, sputtering, electroless plating, or by electroplating. Soft lead solder may be applied as a pre-form or by dipping or immersion techniques to bond the coated wafer to the heat sink.
GB4779/68A
1967-02-27
1968-01-30
Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
Expired
GB1149606A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US61863867A
1967-02-27
1967-02-27
Publications (1)
Publication Number
Publication Date
GB1149606A
true
GB1149606A
(en)
1969-04-23
Family
ID=24478504
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4779/68A
Expired
GB1149606A
(en)
1967-02-27
1968-01-30
Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
Country Status (4)
Country
Link
BE
(1)
BE711076A
(en)
FR
(1)
FR1555176A
(en)
GB
(1)
GB1149606A
(en)
NL
(1)
NL6802104A
(en)
Cited By (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
EP0070435A2
(en)
*
1981-07-02
1983-01-26
Matsushita Electronics Corporation
Semiconductor device comprising a semiconductor substrate bonded to a mounting means
EP0071314A2
(en)
*
1981-07-31
1983-02-09
Koninklijke Philips Electronics N.V.
Semiconductor devices and a solder for use in such devices
DE3443784A1
(en)
*
1983-11-30
1985-07-18
Mitsubishi Denki K.K., Tokio/Tokyo
GATE SHUT-OFF THYRISTOR
DE19606101A1
(en)
*
1996-02-19
1997-08-21
Siemens Ag
Semiconductor body with solder material layer
EP1195805A2
(en)
*
2000-10-05
2002-04-10
SANYO ELECTRIC Co., Ltd.
Heat radiation substrate and semiconductor module
US20070173045A1
(en)
2006-01-23
2007-07-26
Mitsubishi Electric Corporation
Method of manufacturing semiconductor device
Families Citing this family (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
CH662007A5
(en)
*
1983-12-21
1987-08-31
Bbc Brown Boveri & Cie
Method of soldering semiconductor components
1968
1968-01-30
GB
GB4779/68A
patent/GB1149606A/en
not_active
Expired
1968-02-14
NL
NL6802104A
patent/NL6802104A/xx
unknown
1968-02-21
BE
BE711076D
patent/BE711076A/xx
unknown
1968-02-26
FR
FR1555176D
patent/FR1555176A/fr
not_active
Expired
Cited By (13)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
EP0070435A2
(en)
*
1981-07-02
1983-01-26
Matsushita Electronics Corporation
Semiconductor device comprising a semiconductor substrate bonded to a mounting means
EP0070435A3
(en)
*
1981-07-02
1984-11-21
Matsushita Electronics Corporation
Semiconductor device comprising a semiconductor substrate bonded to a mounting means
EP0071314A2
(en)
*
1981-07-31
1983-02-09
Koninklijke Philips Electronics N.V.
Semiconductor devices and a solder for use in such devices
EP0071314A3
(en)
*
1981-07-31
1984-04-25
Philips Electronic And Associated Industries Limited
Semiconductor devices and a solder for use in such devices
DE3443784A1
(en)
*
1983-11-30
1985-07-18
Mitsubishi Denki K.K., Tokio/Tokyo
GATE SHUT-OFF THYRISTOR
DE3448379C2
(en)
*
1983-11-30
1993-12-16
Mitsubishi Electric Corp
Gate shutdown thyristor
DE19606101A1
(en)
*
1996-02-19
1997-08-21
Siemens Ag
Semiconductor body with solder material layer
US5901901A
(en)
*
1996-02-19
1999-05-11
Siemens Aktiengesellschaft
Semiconductor assembly with solder material layer and method for soldering the semiconductor assemly
EP1195805A2
(en)
*
2000-10-05
2002-04-10
SANYO ELECTRIC Co., Ltd.
Heat radiation substrate and semiconductor module
EP1195805A3
(en)
*
2000-10-05
2006-06-14
SANYO ELECTRIC Co., Ltd.
Heat radiation substrate and semiconductor module
US20070173045A1
(en)
2006-01-23
2007-07-26
Mitsubishi Electric Corporation
Method of manufacturing semiconductor device
DE102006062029B4
(en)
*
2006-01-23
2010-04-08
Mitsubishi Electric Corp.
Method for producing a semiconductor device
US8183144B2
(en)
2006-01-23
2012-05-22
Mitsubishi Electric Corporation
Method of manufacturing semiconductor device
Also Published As
Publication number
Publication date
BE711076A
(en)
1968-08-21
FR1555176A
(en)
1969-01-24
NL6802104A
(en)
1968-08-28
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