GB1152464A – Thyristors
– Google Patents
GB1152464A – Thyristors
– Google Patents
Thyristors
Info
Publication number
GB1152464A
GB1152464A
GB3830965A
GB3830965A
GB1152464A
GB 1152464 A
GB1152464 A
GB 1152464A
GB 3830965 A
GB3830965 A
GB 3830965A
GB 3830965 A
GB3830965 A
GB 3830965A
GB 1152464 A
GB1152464 A
GB 1152464A
Authority
GB
United Kingdom
Prior art keywords
region
minor
cathode
gate
gate region
Prior art date
1965-09-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3830965A
Inventor
Michael Murray Bertioli
David Everitt Millington
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZF International UK Ltd
Original Assignee
Lucas Industries Ltd
Joseph Lucas Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1965-09-08
Filing date
1965-09-08
Publication date
1969-05-21
1965-09-08
Application filed by Lucas Industries Ltd, Joseph Lucas Industries Ltd
filed
Critical
Lucas Industries Ltd
1965-09-08
Priority to GB3830965A
priority
Critical
patent/GB1152464A/en
1966-09-06
Priority to FR75358A
priority
patent/FR1491808A/en
1969-05-21
Publication of GB1152464A
publication
Critical
patent/GB1152464A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
230000002093
peripheral effect
Effects
0.000
abstract
4
PXHVJJICTQNCMI-UHFFFAOYSA-N
Nickel
Chemical group
[Ni]
PXHVJJICTQNCMI-UHFFFAOYSA-N
0.000
abstract
2
239000004411
aluminium
Substances
0.000
abstract
2
XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound
[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
abstract
2
229910052782
aluminium
Inorganic materials
0.000
abstract
2
238000010438
heat treatment
Methods
0.000
abstract
2
DLYUQMMRRRQYAE-UHFFFAOYSA-N
tetraphosphorus decaoxide
Chemical compound
O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3
DLYUQMMRRRQYAE-UHFFFAOYSA-N
0.000
abstract
2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
Boron
Chemical compound
[B]
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
0.000
abstract
1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
1
229910052796
boron
Inorganic materials
0.000
abstract
1
238000005530
etching
Methods
0.000
abstract
1
PCHJSUWPFVWCPO-UHFFFAOYSA-N
gold
Chemical compound
[Au]
PCHJSUWPFVWCPO-UHFFFAOYSA-N
0.000
abstract
1
239000010931
gold
Substances
0.000
abstract
1
229910052737
gold
Inorganic materials
0.000
abstract
1
229910052759
nickel
Inorganic materials
0.000
abstract
1
239000004065
semiconductor
Substances
0.000
abstract
1
229910052710
silicon
Inorganic materials
0.000
abstract
1
239000010703
silicon
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/70—Bipolar devices
H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Abstract
1,152,464. Semi-conductor devices. JOSEPH LUCAS (INDUSTRIES) Ltd. 30 Aug., 1968 [8 Sept., 1965], No. 38309/65. Heading H1K. The gate region of an SCR comprises a major portion the junction between which portion and the cathode region is short circuited, and a minor portion to which the gate electrode is applied. The device is produced by lapping and etching an N-type silicon wafer, diffusing aluminium into the surfaces and driving-in the aluminium by heating in air to produce P-type layers, and then heating in phosphorus pentoxide vapour to produce N-type layers. The lower N-type layer is removed and the upper N-type layer, which forms the cathode region, is masked using black wax or a photo-resist and etched. As shown, Fig. F, the cathode region comprises a central mesa from which two arms extend to the edge of the wafer dividing the exposed annular peripheral part of the underlying gate region into a major portion 16a and a minor portion 16b. Boron is diffused into these exposed portions of the gate region to form P+ type surface regions. The junction between the minor peripheral portion 16b and the emitter region 14 is masked and the surface of the wafer is nickel plated and then gold plated to form a gate electrode on minor peripheral portion 16b of the gate region and a cathode electrode on region 14, this cathode electrode extending on to the major peripheral portion 16a of the gate region to short circuit the junction. A plurality of devices may be produced in a single wafer which is then subdivided and the anode regions of the individual devices are soldered to mounting studs.
GB3830965A
1965-09-08
1965-09-08
Thyristors
Expired
GB1152464A
(en)
Priority Applications (2)
Application Number
Priority Date
Filing Date
Title
GB3830965A
GB1152464A
(en)
1965-09-08
1965-09-08
Thyristors
FR75358A
FR1491808A
(en)
1965-09-08
1966-09-06
Thyristor perfected
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
GB3830965A
GB1152464A
(en)
1965-09-08
1965-09-08
Thyristors
Publications (1)
Publication Number
Publication Date
GB1152464A
true
GB1152464A
(en)
1969-05-21
Family
ID=10402611
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB3830965A
Expired
GB1152464A
(en)
1965-09-08
1965-09-08
Thyristors
Country Status (1)
Country
Link
GB
(1)
GB1152464A
(en)
1965
1965-09-08
GB
GB3830965A
patent/GB1152464A/en
not_active
Expired
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Legal Events
Date
Code
Title
Description
1969-10-01
PS
Patent sealed
1982-03-31
PCNP
Patent ceased through non-payment of renewal fee
