GB1172783A – Improvements relating to Unipolar Semiconductor Devices
– Google Patents
GB1172783A – Improvements relating to Unipolar Semiconductor Devices
– Google Patents
Improvements relating to Unipolar Semiconductor Devices
Info
Publication number
GB1172783A
GB1172783A
GB3907068A
GB3907068A
GB1172783A
GB 1172783 A
GB1172783 A
GB 1172783A
GB 3907068 A
GB3907068 A
GB 3907068A
GB 3907068 A
GB3907068 A
GB 3907068A
GB 1172783 A
GB1172783 A
GB 1172783A
Authority
GB
United Kingdom
Prior art keywords
layers
slot
insulation
depositing
substrate
Prior art date
1967-08-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3907068A
Inventor
Karsten E Drangeid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-08-22
Filing date
1968-08-15
Publication date
1969-12-03
1968-08-15
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1969-12-03
Publication of GB1172783A
publication
Critical
patent/GB1172783A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
abstract
4
238000000151
deposition
Methods
0.000
abstract
4
238000009413
insulation
Methods
0.000
abstract
4
229910052751
metal
Inorganic materials
0.000
abstract
4
239000002184
metal
Substances
0.000
abstract
4
239000000758
substrate
Substances
0.000
abstract
4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound
O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
2
239000000463
material
Substances
0.000
abstract
2
238000006263
metalation reaction
Methods
0.000
abstract
2
229910052710
silicon
Inorganic materials
0.000
abstract
2
239000010703
silicon
Substances
0.000
abstract
2
238000004544
sputter deposition
Methods
0.000
abstract
2
JBRZTFJDHDCESZ-UHFFFAOYSA-N
AsGa
Chemical compound
[As]#[Ga]
JBRZTFJDHDCESZ-UHFFFAOYSA-N
0.000
abstract
1
229910001218
Gallium arsenide
Inorganic materials
0.000
abstract
1
ZOKXTWBITQBERF-UHFFFAOYSA-N
Molybdenum
Chemical compound
[Mo]
ZOKXTWBITQBERF-UHFFFAOYSA-N
0.000
abstract
1
KAPYVWKEUSXLKC-UHFFFAOYSA-N
[Sb].[Au]
Chemical compound
[Sb].[Au]
KAPYVWKEUSXLKC-UHFFFAOYSA-N
0.000
abstract
1
239000004411
aluminium
Substances
0.000
abstract
1
229910052782
aluminium
Inorganic materials
0.000
abstract
1
XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound
[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
abstract
1
230000005540
biological transmission
Effects
0.000
abstract
1
238000005530
etching
Methods
0.000
abstract
1
230000008020
evaporation
Effects
0.000
abstract
1
238000001704
evaporation
Methods
0.000
abstract
1
230000005669
field effect
Effects
0.000
abstract
1
239000010410
layer
Substances
0.000
abstract
1
229910052750
molybdenum
Inorganic materials
0.000
abstract
1
239000011733
molybdenum
Substances
0.000
abstract
1
238000001259
photo etching
Methods
0.000
abstract
1
239000000377
silicon dioxide
Substances
0.000
abstract
1
WFKWXMTUELFFGS-UHFFFAOYSA-N
tungsten
Chemical compound
[W]
WFKWXMTUELFFGS-UHFFFAOYSA-N
0.000
abstract
1
229910052721
tungsten
Inorganic materials
0.000
abstract
1
239000010937
tungsten
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
H01L29/8122—Vertical transistors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/78—Field effect transistors with field effect produced by an insulated gate
H01L29/7827—Vertical transistors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Abstract
1,172,783. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 15 Aug., 1968 [22 Aug., 1967], No. 39070/68. Heading H1K. A field-effect device is made by depositing layers successively of insulation, metal, and insulation on a substrate, forming a slot through the layers to the substrate and depositing semiconductor in the slot to form a conducting channel controllable by application of voltage to the metal (gate) layer. Typically, the substrate is of N-type silicon or gallium arsenide and forms one electrode of the device though a metal layer beneath the other layers may alternatively serve this purpose. Silica is a suitable material for the insulating layers and molybdenum or tungsten, which form a Schottky contact with silicon used as the semiconductor may be used for the intervening gate layer. The layers are formed by cathode sputtering or evaporation and the slot, which may separate the gate into two independent parts, by photo-etching. Contact to the upper end of the channel is made by cathode sputtering a gold-antimony compound or aluminium and etching to shape. In an alternative MOS device, the slot is lined with insulation prior to depositing the channel material. In either case additional gates may be provided by depositing further layers of metal and insulation and the frequency of response improved by extending the source and drain electrodes to form input and output transmission lines. A number of devices with a common source or drain may be formed on the same substrate.
GB3907068A
1967-08-22
1968-08-15
Improvements relating to Unipolar Semiconductor Devices
Expired
GB1172783A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
CH1180467A
CH458546A
(en)
1967-08-22
1967-08-22
Process for the production of unipolar semiconductor devices
Publications (1)
Publication Number
Publication Date
GB1172783A
true
GB1172783A
(en)
1969-12-03
Family
ID=4377023
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB3907068A
Expired
GB1172783A
(en)
1967-08-22
1968-08-15
Improvements relating to Unipolar Semiconductor Devices
Country Status (5)
Country
Link
CH
(1)
CH458546A
(en)
DE
(1)
DE1764561A1
(en)
FR
(1)
FR1575368A
(en)
GB
(1)
GB1172783A
(en)
NL
(1)
NL158320B
(en)
1967
1967-08-22
CH
CH1180467A
patent/CH458546A/en
unknown
1968
1968-06-27
DE
DE19681764561
patent/DE1764561A1/en
active
Pending
1968-07-15
NL
NL6809983A
patent/NL158320B/en
not_active
IP Right Cessation
1968-07-29
FR
FR1575368D
patent/FR1575368A/fr
not_active
Expired
1968-08-15
GB
GB3907068A
patent/GB1172783A/en
not_active
Expired
Also Published As
Publication number
Publication date
DE1764561A1
(en)
1971-08-26
NL158320B
(en)
1978-10-16
NL6809983A
(en)
1969-02-25
FR1575368A
(en)
1969-07-18
CH458546A
(en)
1968-06-30
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Legal Events
Date
Code
Title
Description
1970-04-15
PS
Patent sealed
1982-03-10
PCNP
Patent ceased through non-payment of renewal fee
