GB1175601A - Creation of Inventions and Patents with Artificial Intelligence

GB1175601A – Insulated-Gate Field-Effect Transistor
– Google Patents

GB1175601A – Insulated-Gate Field-Effect Transistor
– Google Patents
Insulated-Gate Field-Effect Transistor

Info

Publication number
GB1175601A

GB1175601A
GB01893/67A
GB1189367A
GB1175601A
GB 1175601 A
GB1175601 A
GB 1175601A
GB 01893/67 A
GB01893/67 A
GB 01893/67A
GB 1189367 A
GB1189367 A
GB 1189367A
GB 1175601 A
GB1175601 A
GB 1175601A
Authority
GB
United Kingdom
Prior art keywords
source
island
gate
drain
region
Prior art date
1966-03-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB01893/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1966-03-28
Filing date
1967-03-14
Publication date
1969-12-23

1967-03-14
Application filed by Matsushita Electronics Corp
filed
Critical
Matsushita Electronics Corp

1969-12-23
Publication of GB1175601A
publication
Critical
patent/GB1175601A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

H01L29/76—Unipolar devices, e.g. field effect transistors

H01L29/772—Field effect transistors

H01L29/78—Field effect transistors with field effect produced by an insulated gate

H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L23/00—Details of semiconductor or other solid state devices

H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor

H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body

H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions

H01L29/0642—Isolation within the component, i.e. internal isolation

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions

H01L29/0692—Surface layout

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/0001—Technical content checked by a classifier

H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1,175,601. Field effect transistors. MATSUSHITA ELECTRONICS CORP. 14 March. 1967 [28 March, 1966], No. 11893/67. Heading H1K. A multiple field-effect transistor comprises at least one intermediate region between terminal source and drain regions, the current voltage characteristics of the successive transistors each formed by an adjacent three of such regions (acting as source, gate and drain) differing from each other, whereby the same gate voltage in each case would allow successively higher currents. Fig. 1 shows an insulated gate field effect transistor comprising N-type source region 1, drain region 4 and N-type ” island ” region 5; two gate electrode control 2 and screen 13 control the channel regions between source-island 5 and island 5-drain 4. The arrangement resembles two transistors 1, 2, 5 and 5, 3, 4 and three suitable alternative means are described for ensuring that the saturation current of the second exceeds that of the first (for the same effective operating voltages). Firstly: the lateral dimension of the second ” source ” (i.e. the ” island “) may be made to exceed that of the first source; or secondly the length from “island” to drain may exceed that of the source to the ” island,” or thirdly the pinch off voltage of the second transistor may be made higher than that of the first by providing a thicker insulating layer for the second gate region than for the first or if operation is taking place in the enhancement mode, a thinner insulating layer. The increased “source” dimension may be provided by an annular construction with the source surrounded by island and drain regions. Figures 9 and 10 show an interdigital arrangement comprising N-type regions 21, 25 and 24 in a P-type subtrate 26 forming source, island and drain regions respectively, and ” control ” gate 22 and ” screen ” gate 23 are provided over oxide layer 27, 271. The oxide layer is made thinner (1000 ) under gate 22 than under gate 23 so that the latter has a higher effective pinch off voltage. In modifications, the oxide layer step at the change of thickness is situated at the drain end, the centre, and the source end of the “island” electrode to provide various characteristics. The semi-conductor may consist of silicon germanium, gallium arsenide, cadmium sulphide, cadmium telluride and the insulating layer of Si0 2 , SiO, magnesium fluoride or silicon nitride. More than two gate electrodes may be provided.

GB01893/67A
1966-03-28
1967-03-14
Insulated-Gate Field-Effect Transistor

Expired

GB1175601A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

JP1982866

1966-03-28

Publications (1)

Publication Number
Publication Date

GB1175601A
true

GB1175601A
(en)

1969-12-23

Family
ID=12010142
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB01893/67A
Expired

GB1175601A
(en)

1966-03-28
1967-03-14
Insulated-Gate Field-Effect Transistor

Country Status (8)

Country
Link

US
(1)

US3786319A
(en)

BE
(1)

BE696169A
(en)

CH
(1)

CH480735A
(en)

DE
(1)

DE1614144B2
(en)

GB
(1)

GB1175601A
(en)

NL
(1)

NL154625B
(en)

SE
(1)

SE337262B
(en)

SU
(1)

SU398068A3
(en)

Cited By (2)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE2444906A1
(en)

1973-09-21
1975-04-24
Tokyo Shibaura Electric Co

EFFICIENT SEMI-CONDUCTOR STORAGE

EP0551940A2
(en)

1992-01-17
1993-07-21
Philips Electronics Uk Limited
A semiconductor device comprising a multigate MOSFET

Families Citing this family (21)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3893162A
(en)

1972-03-02
1975-07-01
Siemens Ag
Resilient tubular member for holding a semiconductor device together under pressure

US4240093A
(en)

1976-12-10
1980-12-16
Rca Corporation
Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors

US4173022A
(en)

1978-05-09
1979-10-30
Rca Corp.
Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics

JPS5553462A
(en)

1978-10-13
1980-04-18
Int Rectifier Corp
Mosfet element

US5191396B1
(en)

1978-10-13
1995-12-26
Int Rectifier Corp
High power mosfet with low on-resistance and high breakdown voltage

US5130767C1
(en)

1979-05-14
2001-08-14
Int Rectifier Corp
Plural polygon source pattern for mosfet

US4370669A
(en)

1980-07-16
1983-01-25
General Motors Corporation
Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit

JPS5727070A
(en)

1980-07-25
1982-02-13
Toshiba Corp
Mos type semiconductor device

US4499482A
(en)

1981-12-22
1985-02-12
Levine Michael A
Weak-source for cryogenic semiconductor device

DE3639433A1
(en)

1986-11-18
1988-05-26
Licentia Gmbh

SEMICONDUCTOR ARRANGEMENT

US5440154A
(en)

1993-07-01
1995-08-08
Lsi Logic Corporation
Non-rectangular MOS device configurations for gate array type integrated circuits

US5874754A
(en)

1993-07-01
1999-02-23
Lsi Logic Corporation
Microelectronic cells with bent gates and compressed minimum spacings, and method of patterning interconnections for the gates

US5864165A
(en)

1994-11-02
1999-01-26
Lsi Logic Corporation
Triangular semiconductor NAND gate

US5777360A
(en)

1994-11-02
1998-07-07
Lsi Logic Corporation
Hexagonal field programmable gate array architecture

US5742086A
(en)

1994-11-02
1998-04-21
Lsi Logic Corporation
Hexagonal DRAM array

US5973376A
(en)

1994-11-02
1999-10-26
Lsi Logic Corporation
Architecture having diamond shaped or parallelogram shaped cells

US6097073A
(en)

1994-11-02
2000-08-01
Lsi Logic Corporation
Triangular semiconductor or gate

US5869371A
(en)

1995-06-07
1999-02-09
Stmicroelectronics, Inc.
Structure and process for reducing the on-resistance of mos-gated power devices

WO2000028659A1
(en)

1998-11-09
2000-05-18
Smith Technology Development, Llc.
Two-dimensional amplifier

JP4794141B2
(en)

2004-06-03
2011-10-19
Ｏｋｉセミコンダクタ株式会社

Semiconductor device and manufacturing method thereof

US10276679B2
(en)

2017-05-30
2019-04-30
Vanguard International Semiconductor Corporation
Semiconductor device and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3268827A
(en)

1963-04-01
1966-08-23
Rca Corp
Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability

US3339128A
(en)

1964-07-31
1967-08-29
Rca Corp
Insulated offset gate field effect transistor

US3406298A
(en)

1965-02-03
1968-10-15
Ibm
Integrated igfet logic circuit with linear resistive load

US3436622A
(en)

1966-12-20
1969-04-01
Texas Instruments Inc
Compound channel insulated gate triode

1967

1967-03-14
GB
GB01893/67A
patent/GB1175601A/en
not_active
Expired

1967-03-20
US
US00624477A
patent/US3786319A/en
not_active
Expired – Lifetime

1967-03-21
SE
SE03976/67A
patent/SE337262B/xx
unknown

1967-03-22
SU
SU1142276A
patent/SU398068A3/ru
active

1967-03-22
NL
NL676704263A
patent/NL154625B/en
not_active
IP Right Cessation

1967-03-28
CH
CH428667A
patent/CH480735A/en
not_active
IP Right Cessation

1967-03-28
DE
DE1967M0073353
patent/DE1614144B2/en
active
Granted

1967-03-28
BE
BE696169D
patent/BE696169A/xx
not_active
IP Right Cessation

Cited By (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE2444906A1
(en)

1973-09-21
1975-04-24
Tokyo Shibaura Electric Co

EFFICIENT SEMI-CONDUCTOR STORAGE

EP0551940A2
(en)

1992-01-17
1993-07-21
Philips Electronics Uk Limited
A semiconductor device comprising a multigate MOSFET

EP0551940A3
(en)

1992-01-17
1994-02-02
Philips Electronics Uk Ltd

US5528065A
(en)

1992-01-17
1996-06-18
U.S. Philips Corporation
Dual-gate insulated gate field effect device

Also Published As

Publication number
Publication date

SU398068A3
(en)

1973-09-17

SE337262B
(en)

1971-08-02

DE1614144B2
(en)

1970-11-05

NL154625B
(en)

1977-09-15

DE1614144A1
(en)

1970-06-25

BE696169A
(en)

1967-09-01

US3786319A
(en)

1974-01-15

CH480735A
(en)

1969-10-31

NL6704263A
(en)

1967-09-29

Contact information