GB1183150A - Creation of Inventions and Patents with Artificial Intelligence

GB1183150A – Field Effect Transistor
– Google Patents

GB1183150A – Field Effect Transistor
– Google Patents
Field Effect Transistor

Info

Publication number
GB1183150A

GB1183150A
GB02190/68A
GB1219068A
GB1183150A
GB 1183150 A
GB1183150 A
GB 1183150A
GB 02190/68 A
GB02190/68 A
GB 02190/68A
GB 1219068 A
GB1219068 A
GB 1219068A
GB 1183150 A
GB1183150 A
GB 1183150A
Authority
GB
United Kingdom
Prior art keywords
gate electrode
source
drain
channel
drain regions
Prior art date
1967-04-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB02190/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Raytheon Co

Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-04-17
Filing date
1968-03-13
Publication date
1970-03-04

1968-03-13
Application filed by Hughes Aircraft Co
filed
Critical
Hughes Aircraft Co

1970-03-04
Publication of GB1183150A
publication
Critical
patent/GB1183150A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

H01L21/26—Bombardment with radiation

H01L21/263—Bombardment with radiation with high-energy radiation

H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors

H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor

H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes

H01L29/0843—Source or drain regions of field-effect devices

H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Abstract

1,183,150. Semi-conductor devices. HUGHES AIRCRAFT CO. 13 March, 1968 [17 April, 1967]. No. 12190/68. Heading H1K. In an IGFET having spaced source and drain regions of opposite conductivity type to the substrate the gate electrode is disposed over part only of the channel region between the source and drain and a surface region contiguous with the drain extends along part of the channel not covered by the gate electrode. The device is produced by oxidizing the surface of an N-type silicon wafer 2, masking and etching to leave a peripheral strip 5 and an annular region (6) of oxide, Figs. 1 and 2 (not shown), diffusing-in boron from the vapour phase to form P-type source and drain regions 10, 12, Fig. 3 (not shown), removing the annular mask and forming a fresh thin oxide layer 61 over the surface, vapour depositing Al, Cr or Au over the surface and masking and etching, or alternatively depositing a metal through a mechanical mask, to form an annular gate electrode 14 covering the outer part of the channel between the peripheries of the diffused source and drain regions 10, 12, Fig. 4 (not shown), forming a P-type region 16 in the remainder of the channel by ion implantation, the remainder of the wafer being protected by the edge of the gate electrode and a mechanical mask, Figs. 5 and 6 (not shown), and exposing parts of the source and drain regions 10, 12 and depositing Al to form source and drain electrodes 19, 21, Fig. 7. The gate electrode 14 has an extension (141) to the edge of the wafer where it overlies a tab (51) extending from the original peripheral oxide mask (5) to provide a gate electrode bonding pad, Fig. 4 (not shown). The source and drain electrodes may be formed simultaneously with the gate electrode.

GB02190/68A
1967-04-17
1968-03-13
Field Effect Transistor

Expired

GB1183150A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US63126367A

1967-04-17
1967-04-17

Publications (1)

Publication Number
Publication Date

GB1183150A
true

GB1183150A
(en)

1970-03-04

Family
ID=24530459
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB02190/68A
Expired

GB1183150A
(en)

1967-04-17
1968-03-13
Field Effect Transistor

Country Status (2)

Country
Link

US
(1)

US3534235A
(en)

GB
(1)

GB1183150A
(en)

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

FR2399126A1
(en)

1977-04-15
1979-02-23
Hitachi Ltd

SEMICONDUCTOR FIELD-EFFECT DEVICE OF THE INSULATED GRILLE TYPE, MOUNTING USING THIS DEVICE AND METHOD FOR MANUFACTURING THE LATTER

Families Citing this family (10)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3590471A
(en)

1969-02-04
1971-07-06
Bell Telephone Labor Inc
Fabrication of insulated gate field-effect transistors involving ion implantation

BE759667A
(en)

1969-12-01
1971-06-01
Philips Nv

PROCESS ALLOWING THE MANUFACTURING OF A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE OBTAINED BY IMPLEMENTATION OF THIS PROCESS

FR2289051A1
(en)

1974-10-22
1976-05-21
Ibm

SEMICONDUCTOR DEVICES OF THE FIELD-EFFECT TRANSISTOR TYPE AND INSULATED DOOR AND OVERVOLTAGE PROTECTION CIRCUITS

JPS5532032B2
(en)

1975-02-20
1980-08-22

DE2729657A1
(en)

1977-06-30
1979-01-11
Siemens Ag

FIELD EFFECT TRANSISTOR WITH EXTREMELY SHORT CHANNEL LENGTH

JPS5553462A
(en)

1978-10-13
1980-04-18
Int Rectifier Corp
Mosfet element

US5191396B1
(en)

1978-10-13
1995-12-26
Int Rectifier Corp
High power mosfet with low on-resistance and high breakdown voltage

US4814850A
(en)

1984-04-27
1989-03-21
Texas Instruments Incorporated
Density intensive non-self-aligned stacked CMOS

US5869371A
(en)

1995-06-07
1999-02-09
Stmicroelectronics, Inc.
Structure and process for reducing the on-resistance of mos-gated power devices

US11476781B2
(en)

2012-11-16
2022-10-18
U.S. Well Services, LLC
Wireline power supply during electric powered fracturing operations

Family Cites Families (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3296508A
(en)

1962-12-17
1967-01-03
Rca Corp
Field-effect transistor with reduced capacitance between gate and channel

US3305708A
(en)

1964-11-25
1967-02-21
Rca Corp
Insulated-gate field-effect semiconductor device

US3411199A
(en)

1965-05-28
1968-11-19
Rca Corp
Semiconductor device fabrication

US3434021A
(en)

1967-01-13
1969-03-18
Rca Corp
Insulated gate field effect transistor

1967

1967-04-17
US
US631263A
patent/US3534235A/en
not_active
Expired – Lifetime

1968

1968-03-13
GB
GB02190/68A
patent/GB1183150A/en
not_active
Expired

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

FR2399126A1
(en)

1977-04-15
1979-02-23
Hitachi Ltd

SEMICONDUCTOR FIELD-EFFECT DEVICE OF THE INSULATED GRILLE TYPE, MOUNTING USING THIS DEVICE AND METHOD FOR MANUFACTURING THE LATTER

Also Published As

Publication number
Publication date

US3534235A
(en)

1970-10-13

Contact information