GB1199811A

GB1199811A – Production of Nitrogen-Containing Compounds
– Google Patents

GB1199811A – Production of Nitrogen-Containing Compounds
– Google Patents
Production of Nitrogen-Containing Compounds

Info

Publication number
GB1199811A

GB1199811A
GB1163468A
GB1163468A
GB1199811A
GB 1199811 A
GB1199811 A
GB 1199811A
GB 1163468 A
GB1163468 A
GB 1163468A
GB 1163468 A
GB1163468 A
GB 1163468A
GB 1199811 A
GB1199811 A
GB 1199811A
Authority
GB
United Kingdom
Prior art keywords
halide
tube
gas
inert gas
stream
Prior art date
1968-03-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB1163468A
Inventor
Alan Edward Comyns
Dennis Cleaver
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

British Titan Products Co Ltd

Original Assignee
British Titan Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1968-03-09
Filing date
1968-03-09
Publication date
1970-07-22

1968-03-09
Application filed by British Titan Products Co Ltd
filed
Critical
British Titan Products Co Ltd

1968-03-09
Priority to GB1163468A
priority
Critical
patent/GB1199811A/en

1969-03-06
Priority to FR6906286A
priority
patent/FR2003568A1/fr

1970-07-22
Publication of GB1199811A
publication
Critical
patent/GB1199811A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

B—PERFORMING OPERATIONS; TRANSPORTING

B82—NANOTECHNOLOGY

B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron

C01B21/0643—Preparation from boron halides

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2004/00—Particle morphology

C01P2004/60—Particles characterised by their size

C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2006/00—Physical properties of inorganic compounds

C01P2006/12—Surface area

Abstract

1,199,811. Discharge in gases. BRITISH TITAN PRODUCTS CO. Ltd. 4 Feb., 1969 [9 March, 1968], No. 11634/68. Heading H5H. [Also in Division C1] An apparatus is described for the production of nitrides by establishing a high energy electrical discharge in a stream of a vaporized halide (Al, Si, B, Zr or Ti) or in a mixture of the halide and an inert gas, in order to heat the halide and then reacting the heated halide with ammonia. Preferably the heating of the halide is effected in a volume of plasma which is maintained in a gas-containing tube having heat-resistant walls (e.g. of silica) by the passage of a R/F oscillatory electric current around the tube in order to introduce in the halide an area of electrical discharge of sufficient energy to heat the gas stream. The gasconfining tube may be surrounded over at least a portion of its surface with a coil of an electrically conducting material, e.g. a coil of copper tube. In Fig. 1 (not shown), the gas confining tube (1) has a copper coil (2) surrounding a portion of its surface connected to a source of R/F oscillatory electric current. The tube is provided with a gas distribution head (3) and the whole is mounted on a silica reactor (4) having an exit tube (5) passing through a water-cooled condenser (6) to a filter (7). The tube (8) allows agglomeration of the product particles before filtering. The bag filter is connected to a scrubber (12) filled with NaOH solution to remove acidic by-products from the gas stream prior to discharge through vent (15). Halide contained in vessel (76) passes through vaporizer (20) to distribution head (3) which is supplied with a further inlet (25) through which an inert gas may be fed to initiate a plasma. The distribution head is so designed to introduce the stream of halide vapour or mixture thereof with an inert gas into the high energy electric discharge in such a manner that the stream follows a helical path. A gas distribution head for use with a titanium halide (Fig. 2, not shown), is equipped with a probe through which the halide is introduced and which terminates part of the way through the electric discharge so that the halide is mixed with already heated inert gas. Ammonia is introduced through vent (24) into the heated halide or halide/inert gas mixture.

GB1163468A
1968-03-09
1968-03-09
Production of Nitrogen-Containing Compounds

Expired

GB1199811A
(en)

Priority Applications (2)

Application Number
Priority Date
Filing Date
Title

GB1163468A

GB1199811A
(en)

1968-03-09
1968-03-09
Production of Nitrogen-Containing Compounds

FR6906286A

FR2003568A1
(en)

1968-03-09
1969-03-06

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

GB1163468A

GB1199811A
(en)

1968-03-09
1968-03-09
Production of Nitrogen-Containing Compounds

Publications (1)

Publication Number
Publication Date

GB1199811A
true

GB1199811A
(en)

1970-07-22

Family
ID=9989894
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB1163468A
Expired

GB1199811A
(en)

1968-03-09
1968-03-09
Production of Nitrogen-Containing Compounds

Country Status (2)

Country
Link

FR
(1)

FR2003568A1
(en)

GB
(1)

GB1199811A
(en)

Cited By (7)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US4073845A
(en)

1976-01-29
1978-02-14
Gte Sylvania Incorporated
High density high strength S13 N4 ceramics prepared by pressureless sintering of partly crystalline, partly amorphous S13 N4 powder

US4565747A
(en)

*

1983-11-11
1986-01-21
Research Development Corporation
Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom

EP0308116A1
(en)

*

1987-09-11
1989-03-22
Alcan International Limited
Making fine particulate aluminum nitride

EP0334791A1
(en)

*

1988-03-24
1989-09-27
Union Explosivos Rio Tinto, S.A.
Process for the preparation of silicon nitride

US5002646A
(en)

*

1988-04-23
1991-03-26
Tioxide Group Plc
Method for making titanium nitride

US5021134A
(en)

*

1989-06-07
1991-06-04
Tioxide Group Plc
Production of nitrogen compounds

US5470446A
(en)

*

1993-04-01
1995-11-28
Tioxide Specialties Limited
Process for the production of silicon nitride

Families Citing this family (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US4145224A
(en)

*

1974-11-22
1979-03-20
Gte Sylvania Incorporated
Method for enhancing the crystallization rate of high purity amorphous Si3 N4 powder, powders produced thereby and products therefrom

1968

1968-03-09
GB
GB1163468A
patent/GB1199811A/en
not_active
Expired

1969

1969-03-06
FR
FR6906286A
patent/FR2003568A1/fr
not_active
Withdrawn

Cited By (8)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US4073845A
(en)

1976-01-29
1978-02-14
Gte Sylvania Incorporated
High density high strength S13 N4 ceramics prepared by pressureless sintering of partly crystalline, partly amorphous S13 N4 powder

US4565747A
(en)

*

1983-11-11
1986-01-21
Research Development Corporation
Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom

EP0308116A1
(en)

*

1987-09-11
1989-03-22
Alcan International Limited
Making fine particulate aluminum nitride

US4869892A
(en)

*

1987-09-11
1989-09-26
Alcan International Limited
Methods of making fine particulate aluminum nitride

EP0334791A1
(en)

*

1988-03-24
1989-09-27
Union Explosivos Rio Tinto, S.A.
Process for the preparation of silicon nitride

US5002646A
(en)

*

1988-04-23
1991-03-26
Tioxide Group Plc
Method for making titanium nitride

US5021134A
(en)

*

1989-06-07
1991-06-04
Tioxide Group Plc
Production of nitrogen compounds

US5470446A
(en)

*

1993-04-01
1995-11-28
Tioxide Specialties Limited
Process for the production of silicon nitride

Also Published As

Publication number
Publication date

FR2003568A1
(en)

1969-11-07

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Legal Events

Date
Code
Title
Description

1970-12-02
PS
Patent sealed

1977-09-01
PLNP
Patent lapsed through nonpayment of renewal fees

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