GB1220364A – Improvements in metal film resists for the etching of oxides
– Google Patents
GB1220364A – Improvements in metal film resists for the etching of oxides
– Google Patents
Improvements in metal film resists for the etching of oxides
Info
Publication number
GB1220364A
GB1220364A
GB25426/68A
GB2542668A
GB1220364A
GB 1220364 A
GB1220364 A
GB 1220364A
GB 25426/68 A
GB25426/68 A
GB 25426/68A
GB 2542668 A
GB2542668 A
GB 2542668A
GB 1220364 A
GB1220364 A
GB 1220364A
Authority
GB
United Kingdom
Prior art keywords
layer
silicon dioxide
film
metal film
metal
Prior art date
1967-05-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25426/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-05-29
Filing date
1968-05-28
Publication date
1971-01-27
1968-05-28
Application filed by General Electric Co
filed
Critical
General Electric Co
1971-01-27
Publication of GB1220364A
publication
Critical
patent/GB1220364A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
C—CHEMISTRY; METALLURGY
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
C23F1/00—Etching metallic material by chemical means
C23F1/02—Local etching
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
H01L21/3105—After-treatment
H01L21/311—Etching the insulating layers by chemical or physical means
H01L21/31105—Etching inorganic layers
H01L21/31111—Etching inorganic layers by chemical means
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
H01L21/3105—After-treatment
H01L21/311—Etching the insulating layers by chemical or physical means
H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/942—Masking
Y10S438/945—Special, e.g. metal
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Abstract
1,220,364. Etching. GENERAL ELECTRIC CO. 28 May, 1968 [29 May, 1967], No. 25426/68. Heading B6J. [Also in Division H1] Tapered side walls of an aperture in a silicon dioxide layer on the surface of a silicon semiconductor element 10 are achieved by coating the silicon dioxide layer 11 with a film 12 of a metal, such as gold, which is resistant to attack by etchants for silicon dioxide, and forming a tapered-walled aperture in the metal film, then etching in a bath to remove the exposed silicon dioxide layer whilst simultaneously removing the metal film at a uniform rate by means of an electrolytic deplating process. Hydrofluoric acid is used as the silicon dioxide etchant. The aperture in the metal film is produced by applying over the film a layer of polymeric material, containing a photolytically decomposable etchant for the metal, and a photographic positive transparency having zones of graduated transparency where the tapered walls are to be, so that during exposure to activating radiation chemically reactive species in the layer are generated in concentrations proportional to the radiation level at the layer which etch an aperture with tapered walls in the metal film 12. In an alternative embodiment, the metal film 12 with its tapered-walled aperture is directly deposited on the surface of the layer 11 of silicon dioxide by immersing the element and oxide layer in a liquid comprising a photolytically reactive material which is the source of the metal to be plated, and irradiating the surface of the oxide layer with activating radiation through a negative transparency when a metallic film is deposited on those areas of the oxide layer which are illuminated, the thickness of the film being dependent upon the intensity of illumination.
GB25426/68A
1967-05-29
1968-05-28
Improvements in metal film resists for the etching of oxides
Expired
GB1220364A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US64190267A
1967-05-29
1967-05-29
Publications (1)
Publication Number
Publication Date
GB1220364A
true
GB1220364A
(en)
1971-01-27
Family
ID=24574329
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB25426/68A
Expired
GB1220364A
(en)
1967-05-29
1968-05-28
Improvements in metal film resists for the etching of oxides
Country Status (4)
Country
Link
US
(1)
US3483108A
(en)
DE
(1)
DE1772500A1
(en)
FR
(1)
FR1570763A
(en)
GB
(1)
GB1220364A
(en)
Families Citing this family (13)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3867272A
(en)
*
1970-06-30
1975-02-18
Hughes Aircraft Co
Electrolytic anticompromise apparatus
DE2117199C3
(en)
*
1971-04-08
1974-08-22
Philips Patentverwaltung Gmbh, 2000 Hamburg
Process for the production of etched patterns in thin layers with defined edge profiles
IT947673B
(en)
*
1971-04-16
1973-05-30
Ibm
PROCEDURE TO PREVENT OR AT KEEPING THE SELF-DROP OR SPONTANEOUS SPREAD OF IMPURITIES IN SEMICONDUCTIVE SITIVE DEVICES
US3769109A
(en)
*
1972-04-19
1973-10-30
Bell Telephone Labor Inc
PRODUCTION OF SiO{11 {11 TAPERED FILMS
US4054497A
(en)
*
1975-10-06
1977-10-18
Honeywell Inc.
Method for electrolytically etching semiconductor material
NL7607298A
(en)
*
1976-07-02
1978-01-04
Philips Nv
PROCESS FOR MANUFACTURING A DEVICE AND DEVICE MANUFACTURED ACCORDING TO THE PROCESS.
US4098638A
(en)
*
1977-06-14
1978-07-04
Westinghouse Electric Corp.
Methods for making a sloped insulator for solid state devices
US4439270A
(en)
*
1983-08-08
1984-03-27
International Business Machines Corporation
Process for the controlled etching of tapered vias in borosilicate glass dielectrics
US5893967A
(en)
*
1996-03-05
1999-04-13
Candescent Technologies Corporation
Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
US6027632A
(en)
*
1996-03-05
2000-02-22
Candescent Technologies Corporation
Multi-step removal of excess emitter material in fabricating electron-emitting device
US5766446A
(en)
*
1996-03-05
1998-06-16
Candescent Technologies Corporation
Electrochemical removal of material, particularly excess emitter material in electron-emitting device
US6120674A
(en)
*
1997-06-30
2000-09-19
Candescent Technologies Corporation
Electrochemical removal of material in electron-emitting device
US6007695A
(en)
*
1997-09-30
1999-12-28
Candescent Technologies Corporation
Selective removal of material using self-initiated galvanic activity in electrolytic bath
Family Cites Families (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB586003A
(en)
*
1944-03-25
1947-03-04
Kodak Ltd
Method of making diaphragms wholly or partly of metal
US2656496A
(en)
*
1951-07-31
1953-10-20
Bell Telephone Labor Inc
Semiconductor translating device
US3245313A
(en)
*
1961-02-23
1966-04-12
Philco Corp
Light modulating means employing a self-erasing plating solution
US3346384A
(en)
*
1963-04-25
1967-10-10
Gen Electric
Metal image formation
US3423262A
(en)
*
1964-11-23
1969-01-21
Westinghouse Electric Corp
Electrophoretic treatment of photoresist for microcircuity
US3405017A
(en)
*
1965-02-26
1968-10-08
Hughes Aircraft Co
Use of organosilicon subbing layer in photoresist method for obtaining fine patterns for microcircuitry
1967
1967-05-29
US
US641902A
patent/US3483108A/en
not_active
Expired – Lifetime
1968
1968-05-24
DE
DE19681772500
patent/DE1772500A1/en
active
Pending
1968-05-28
GB
GB25426/68A
patent/GB1220364A/en
not_active
Expired
1968-05-29
FR
FR1570763D
patent/FR1570763A/fr
not_active
Expired
Also Published As
Publication number
Publication date
FR1570763A
(en)
1969-06-13
DE1772500A1
(en)
1971-12-30
US3483108A
(en)
1969-12-09
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