GB1244225A - Creation of Inventions and Patents with Artificial Intelligence

GB1244225A – Improvements in and relating to methods of manufacturing semiconductor devices
– Google Patents

GB1244225A – Improvements in and relating to methods of manufacturing semiconductor devices
– Google Patents
Improvements in and relating to methods of manufacturing semiconductor devices

Info

Publication number
GB1244225A

GB1244225A
GB61953/68A
GB6195368A
GB1244225A
GB 1244225 A
GB1244225 A
GB 1244225A
GB 61953/68 A
GB61953/68 A
GB 61953/68A
GB 6195368 A
GB6195368 A
GB 6195368A
GB 1244225 A
GB1244225 A
GB 1244225A
Authority
GB
United Kingdom
Prior art keywords
layer
electrodes
drain regions
ion implantation
source
Prior art date
1968-12-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB61953/68A
Inventor
David Phythian Robinson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

ASSOCIATED SEMICONDUCTOR MFT

Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1968-12-31
Filing date
1968-12-31
Publication date
1971-08-25

1968-12-31
Application filed by ASSOCIATED SEMICONDUCTOR MFT
filed
Critical
ASSOCIATED SEMICONDUCTOR MFT

1968-12-31
Priority to GB61953/68A
priority
Critical
patent/GB1244225A/en

1969-12-15
Priority to ZA698728A
priority
patent/ZA698728B/en

1969-12-23
Priority to DK683869AA
priority
patent/DK125220B/en

1969-12-24
Priority to ES374906A
priority
patent/ES374906A1/en

1969-12-25
Priority to NL6919463A
priority
patent/NL6919463A/xx

1969-12-29
Priority to US888543A
priority
patent/US3650019A/en

1969-12-29
Priority to BR215650/69A
priority
patent/BR6915650D0/en

1969-12-29
Priority to JP44105411A
priority
patent/JPS4816034B1/ja

1969-12-29
Priority to CH1934069A
priority
patent/CH514935A/en

1969-12-29
Priority to SE17986/69A
priority
patent/SE347392B/xx

1969-12-29
Priority to BE743829D
priority
patent/BE743829A/xx

1969-12-30
Priority to FR6945393A
priority
patent/FR2027452B1/fr

1969-12-30
Priority to DE1965799A
priority
patent/DE1965799C3/en

1969-12-30
Priority to AT1211869A
priority
patent/AT311420B/en

1971-08-25
Publication of GB1244225A
publication
Critical
patent/GB1244225A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

239000004065
semiconductor
Substances

0.000
title
abstract
4

238000004519
manufacturing process
Methods

0.000
title
abstract
3

238000000034
method
Methods

0.000
title
1

238000005468
ion implantation
Methods

0.000
abstract
3

OAICVXFJPJFONN-UHFFFAOYSA-N
Phosphorus
Chemical compound

[P]
OAICVXFJPJFONN-UHFFFAOYSA-N
0.000
abstract
2

238000009792
diffusion process
Methods

0.000
abstract
2

230000004048
modification
Effects

0.000
abstract
2

238000012986
modification
Methods

0.000
abstract
2

229910052698
phosphorus
Inorganic materials

0.000
abstract
2

239000011574
phosphorus
Substances

0.000
abstract
2

239000000758
substrate
Substances

0.000
abstract
2

238000005530
etching
Methods

0.000
abstract
1

238000002513
implantation
Methods

0.000
abstract
1

239000002184
metal
Substances

0.000
abstract
1

230000002093
peripheral effect
Effects

0.000
abstract
1

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

H01L29/76—Unipolar devices, e.g. field effect transistors

H01L29/772—Field effect transistors

H01L29/78—Field effect transistors with field effect produced by an insulated gate

H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S438/00—Semiconductor device manufacturing: process

Y10S438/942—Masking

Y10S438/945—Special, e.g. metal

Abstract

1,244,225. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 31 Dec., 1968, No. 61953/68. Heading H1K. A continuous conductive layer 23 is provided over the surface of a semi-conductor body while it is being subjected to ion implantation so that the entire surface is maintained at a common potential. The layer 23 is then removed without removing the underlying body or electrodes &c. thereon. Fig. 5 shows a stage in the manufacture of a P-channel Si IGFET having two gate electrodes 14, 15 overlying respective channels 16, 17 which are joined by an intermediate N-type region 9. The device is formed in a P-type epitaxial layer 2 on a P + substrate 1. Source and drain regions 5, 7 are provided by diffusion of phosphorus, and the various electrodes 11, 12, 14, 15, which have a complex geometry (Fig. 1, not shown), underlie the conductive layer 23 and act as masks against the phosphorus ion implantation which forms the intermediate region 9 and the peripheral portions 6, 8 of the source and drain regions. In modifications the intermediate region 9 may be partly formed by diffusion or the source and drain regions may be entirely formed by ion implantation. The conductive layer may be held at the substrate potential, e.g. earth, by means of a metal clip or by the provision of an aperture in the oxide layer 4, which aperture may have a grid-like shape, each element of the grid surrounding an individual transistor in a large wafer. The electrodes 11, 12, 14, 15 and the layer 23 may all be of Al, the layer 23 being ultimately removed by light etching. Alternatively the electrodes may be of Au on Mo while the layer 23 is of Ti. In a further modification a continuous Ti layer is applied prior to application of Au on Pt electrodes, and after implantation only the exposed portions of the Ti layer are removed. The invention is applicable to complex electrode geometry IGFETs other than the tetrode form illustrated, and may also be used in the manufacture of bipolar transistors or integrated circuits.

GB61953/68A
1968-12-31
1968-12-31
Improvements in and relating to methods of manufacturing semiconductor devices

Expired

GB1244225A
(en)

Priority Applications (14)

Application Number
Priority Date
Filing Date
Title

GB61953/68A

GB1244225A
(en)

1968-12-31
1968-12-31
Improvements in and relating to methods of manufacturing semiconductor devices

ZA698728A

ZA698728B
(en)

1968-12-31
1969-12-15
Improvements in and relating to methods of manufacturing semiconductor devices

DK683869AA

DK125220B
(en)

1968-12-31
1969-12-23

Method for manufacturing semiconductor devices by ion implantation.

ES374906A

ES374906A1
(en)

1968-12-31
1969-12-24
Methods of manufacturing semiconductor devices

NL6919463A

NL6919463A
(en)

1968-12-31
1969-12-25

US888543A

US3650019A
(en)

1968-12-31
1969-12-29
Methods of manufacturing semiconductor devices

BR215650/69A

BR6915650D0
(en)

1968-12-31
1969-12-29

PROCESS OF MANUFACTURING A SEMICONDUCTOR DEVICE

JP44105411A

JPS4816034B1
(en)

1968-12-31
1969-12-29

CH1934069A

CH514935A
(en)

1968-12-31
1969-12-29

Method for manufacturing a semiconductor component and semiconductor component manufactured by this method

SE17986/69A

SE347392B
(en)

1968-12-31
1969-12-29

BE743829D

BE743829A
(en)

1968-12-31
1969-12-29

FR6945393A

FR2027452B1
(en)

1968-12-31
1969-12-30

DE1965799A

DE1965799C3
(en)

1968-12-31
1969-12-30

Method for manufacturing a semiconductor component

AT1211869A

AT311420B
(en)

1968-12-31
1969-12-30

Method for producing a semiconductor component, in particular a surface field effect transistor, by means of ion implantation

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

GB61953/68A

GB1244225A
(en)

1968-12-31
1968-12-31
Improvements in and relating to methods of manufacturing semiconductor devices

Publications (1)

Publication Number
Publication Date

GB1244225A
true

GB1244225A
(en)

1971-08-25

Family
ID=10487686
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB61953/68A
Expired

GB1244225A
(en)

1968-12-31
1968-12-31
Improvements in and relating to methods of manufacturing semiconductor devices

Country Status (14)

Country
Link

US
(1)

US3650019A
(en)

JP
(1)

JPS4816034B1
(en)

AT
(1)

AT311420B
(en)

BE
(1)

BE743829A
(en)

BR
(1)

BR6915650D0
(en)

CH
(1)

CH514935A
(en)

DE
(1)

DE1965799C3
(en)

DK
(1)

DK125220B
(en)

ES
(1)

ES374906A1
(en)

FR
(1)

FR2027452B1
(en)

GB
(1)

GB1244225A
(en)

NL
(1)

NL6919463A
(en)

SE
(1)

SE347392B
(en)

ZA
(1)

ZA698728B
(en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

BE759057A
(en)

1969-11-19
1971-05-17
Philips Nv

GB1289740A
(en)

1969-12-24
1972-09-20

FR2129992B1
(en)

1971-03-25
1974-06-21
Lecrosnier Daniel

US3874937A
(en)

1973-10-31
1975-04-01
Gen Instrument Corp
Method for manufacturing metal oxide semiconductor integrated circuit of reduced size

FR2289051A1
(en)

1974-10-22
1976-05-21
Ibm

SEMICONDUCTOR DEVICES OF THE FIELD-EFFECT TRANSISTOR TYPE AND INSULATED DOOR AND OVERVOLTAGE PROTECTION CIRCUITS

US3912546A
(en)

1974-12-06
1975-10-14
Hughes Aircraft Co
Enhancement mode, Schottky-barrier gate gallium arsenide field effect transistor

US3930893A
(en)

1975-03-03
1976-01-06
Honeywell Information Systems, Inc.
Conductivity connected charge-coupled device fabrication process

US4061506A
(en)

1975-05-01
1977-12-06
Texas Instruments Incorporated
Correcting doping defects

US4011105A
(en)

1975-09-15
1977-03-08
Mos Technology, Inc.
Field inversion control for n-channel device integrated circuits

JPS53128281A
(en)

1977-04-15
1978-11-09
Hitachi Ltd
Insulated gate field effect type semiconductor device for large power

US4142199A
(en)

1977-06-24
1979-02-27
International Business Machines Corporation
Bucket brigade device and process

US4171229A
(en)

1977-06-24
1979-10-16
International Business Machines Corporation
Improved process to form bucket brigade device

US4224733A
(en)

1977-10-11
1980-09-30
Fujitsu Limited
Ion implantation method

US5191396B1
(en)

1978-10-13
1995-12-26
Int Rectifier Corp
High power mosfet with low on-resistance and high breakdown voltage

JPS5553462A
(en)

1978-10-13
1980-04-18
Int Rectifier Corp
Mosfet element

US4280271A
(en)

1979-10-11
1981-07-28
Texas Instruments Incorporated
Three level interconnect process for manufacture of integrated circuit devices

JPH0834297B2
(en)

1988-12-28
1996-03-29
三菱電機株式会社

Semiconductor device

AU657720B2
(en)

1991-01-30
1995-03-23
Canon Kabushiki Kaisha
A bubblejet image reproducing apparatus

US5869371A
(en)

1995-06-07
1999-02-09
Stmicroelectronics, Inc.
Structure and process for reducing the on-resistance of mos-gated power devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3328210A
(en)

1964-10-26
1967-06-27
North American Aviation Inc
Method of treating semiconductor device by ionic bombardment

NL6604962A
(en)

1966-04-14
1967-10-16

US3470609A
(en)

1967-08-18
1969-10-07
Conductron Corp
Method of producing a control system

GB1233545A
(en)

1967-08-18
1971-05-26

US3558366A
(en)

1968-09-17
1971-01-26
Bell Telephone Labor Inc
Metal shielding for ion implanted semiconductor device

1968

1968-12-31
GB
GB61953/68A
patent/GB1244225A/en
not_active
Expired

1969

1969-12-15
ZA
ZA698728A
patent/ZA698728B/en
unknown

1969-12-23
DK
DK683869AA
patent/DK125220B/en
unknown

1969-12-24
ES
ES374906A
patent/ES374906A1/en
not_active
Expired

1969-12-25
NL
NL6919463A
patent/NL6919463A/xx
unknown

1969-12-29
BE
BE743829D
patent/BE743829A/xx
unknown

1969-12-29
SE
SE17986/69A
patent/SE347392B/xx
unknown

1969-12-29
US
US888543A
patent/US3650019A/en
not_active
Expired – Lifetime

1969-12-29
CH
CH1934069A
patent/CH514935A/en
not_active
IP Right Cessation

1969-12-29
BR
BR215650/69A
patent/BR6915650D0/en
unknown

1969-12-29
JP
JP44105411A
patent/JPS4816034B1/ja
active
Pending

1969-12-30
FR
FR6945393A
patent/FR2027452B1/fr
not_active
Expired

1969-12-30
DE
DE1965799A
patent/DE1965799C3/en
not_active
Expired

1969-12-30
AT
AT1211869A
patent/AT311420B/en
not_active
IP Right Cessation

Also Published As

Publication number
Publication date

NL6919463A
(en)

1970-07-02

DK125220B
(en)

1973-01-15

DE1965799A1
(en)

1970-07-23

US3650019A
(en)

1972-03-21

FR2027452B1
(en)

1974-02-01

DE1965799C3
(en)

1978-06-01

BE743829A
(en)

1970-06-29

SE347392B
(en)

1972-07-31

JPS4816034B1
(en)

1973-05-18

AT311420B
(en)

1973-11-12

BR6915650D0
(en)

1973-01-02

DE1965799B2
(en)

1977-09-29

ES374906A1
(en)

1972-03-16

ZA698728B
(en)

1971-07-28

FR2027452A1
(en)

1970-09-25

CH514935A
(en)

1971-10-31

Contact information