GB1246386A - Creation of Inventions and Patents with Artificial Intelligence

GB1246386A – Improvements relating to diffusion of material into a substrate
– Google Patents

GB1246386A – Improvements relating to diffusion of material into a substrate
– Google Patents
Improvements relating to diffusion of material into a substrate

Info

Publication number
GB1246386A

GB1246386A
GB611369A
GB611369A
GB1246386A
GB 1246386 A
GB1246386 A
GB 1246386A
GB 611369 A
GB611369 A
GB 611369A
GB 611369 A
GB611369 A
GB 611369A
GB 1246386 A
GB1246386 A
GB 1246386A
Authority
GB
United Kingdom
Prior art keywords
layer
impurity
substrate
type
laser
Prior art date
1968-02-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB611369A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1968-02-08
Filing date
1969-02-05
Publication date
1971-09-15

1969-02-05
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp

1971-09-15
Publication of GB1246386A
publication
Critical
patent/GB1246386A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

H01L21/26—Bombardment with radiation

H01L21/263—Bombardment with radiation with high-energy radiation

H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

B—PERFORMING OPERATIONS; TRANSPORTING

B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR

B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM

B23K26/00—Working by laser beam, e.g. welding, cutting or boring

B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor

C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state

C30B31/12—Heating of the reaction chamber

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor

C30B31/18—Controlling or regulating

C30B31/185—Pattern diffusion, e.g. by using masks

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

1,246,386. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 5 Feb., 1969 [8 Feb., 1968], No. 6113/69. Addition to 1,122,489. Heading H1K. An impurity is selectively diffused into a semiconductor substrate by applying a layer containing the impurity to the substrate and selectively heating the layer with a pulsed laser beam the duration and intensity of the pulses and the relating positions of the beam and substrate being controlled to achieve the desired diffused region, The semi-conductor substrate (11) may be supported on a carriage (12) so that its position relative to the laser (18) may be varied, for example under computer control, Fig. 1 (not shown). Part of the laser beam is diverted to a monitoring system (26). A light source (28) is arranged so that it projects a light spot on to the substrate at the same point as does the laser so that the substrate may be positioned as desired before energizing the laser. The impurity source layer may comprise pyrolytically deposited SiO 2 containing P, B or As, or P 2 O 5 glass or borate glass, or may be formed by the decomposition of BCl 3 or AsCl 3 . The deposited layer may be photolithographically processed to the desired pattern. Transistors, diodes and integrated circuits may be produced. As shown, Fig. 3, a plurality of transistors isolated from one another by PN junctions may be formed in a single wafer by depositing a layer of an N type impurity on the surface of a P type Si substrate 52 and selectively heating using the pulsed laser beam to produce N type sub-collector regions 53. The excess impurity is removed and an N type layer 58 is epitaxially deposited on the substrate. A layer of a P type impurity is deposited on the surface and is heated to form P+ type isolation regions 56 and P type base regions 60, the difference in impurity concentration and diffusion depth being achieved by appropriate selection of the laser power and pulse length. The excess impurity is removed and replaced with a layer of an N type impurity which is selectively heated to produce N+ type emitter region 62 and collector contact region 64. The excess impurity is removed, a layer 66 of SiO 2 is formed and emitter base and collector contacts are applied by vapour depositing a layer of metal and etching to the desired pattern.

GB611369A
1968-02-08
1969-02-05
Improvements relating to diffusion of material into a substrate

Expired

GB1246386A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US70405868A

1968-02-08
1968-02-08

Publications (1)

Publication Number
Publication Date

GB1246386A
true

GB1246386A
(en)

1971-09-15

Family
ID=24827881
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB611369A
Expired

GB1246386A
(en)

1968-02-08
1969-02-05
Improvements relating to diffusion of material into a substrate

Country Status (3)

Country
Link

DE
(1)

DE1906203A1
(en)

FR
(1)

FR2001303A6
(en)

GB
(1)

GB1246386A
(en)

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

GB2131608A
(en)

1982-11-26
1984-06-20
Gen Electric Plc
Fabricating semiconductor circuits

Families Citing this family (3)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE2837749A1
(en)

1978-08-30
1980-03-13
Philips Patentverwaltung

METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS

DE3017512A1
(en)

1980-05-07
1981-11-12
Siemens AG, 1000 Berlin und 8000 München
Semiconductor impurities gettering – by interference producing element in ray path from pulsed laser

DE3437120A1
(en)

1984-10-10
1986-04-10
Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt

METHOD FOR THE PRODUCTION OF SEMICONDUCTOR LAYERS ON SEMICONDUCTOR BODIES OR FOR THE DIFFUSION OF INTERFERENCE POINTS IN THE SEMICONDUCTOR BODY

1969

1969-02-05
GB
GB611369A
patent/GB1246386A/en
not_active
Expired

1969-02-06
FR
FR6903360A
patent/FR2001303A6/fr
not_active
Expired

1969-02-07
DE
DE19691906203
patent/DE1906203A1/en
active
Pending

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

GB2131608A
(en)

1982-11-26
1984-06-20
Gen Electric Plc
Fabricating semiconductor circuits

Also Published As

Publication number
Publication date

FR2001303A6
(en)

1969-09-26

DE1906203A1
(en)

1969-11-20

Contact information