GB1286219A - Creation of Inventions and Patents with Artificial Intelligence

GB1286219A – Method of producing a pattern in a metallic film
– Google Patents

GB1286219A – Method of producing a pattern in a metallic film
– Google Patents
Method of producing a pattern in a metallic film

Info

Publication number
GB1286219A

GB1286219A
GB07725/71A
GB1772571A
GB1286219A
GB 1286219 A
GB1286219 A
GB 1286219A
GB 07725/71 A
GB07725/71 A
GB 07725/71A
GB 1772571 A
GB1772571 A
GB 1772571A
GB 1286219 A
GB1286219 A
GB 1286219A
Authority
GB
United Kingdom
Prior art keywords
wafer
film
reservoir
etched
article
Prior art date
1970-07-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB07725/71A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NCR Voyix Corp

National Cash Register Co

Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-07-02
Filing date
1971-05-28
Publication date
1972-08-23

1971-05-28
Application filed by NCR Corp, National Cash Register Co
filed
Critical
NCR Corp

1972-08-23
Publication of GB1286219A
publication
Critical
patent/GB1286219A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C—CHEMISTRY; METALLURGY

C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL

C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25

C23F1/00—Etching metallic material by chemical means

C23F1/08—Apparatus, e.g. for photomechanical printing surfaces

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L23/00—Details of semiconductor or other solid state devices

H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor

H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body

H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/0001—Technical content checked by a classifier

H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1286219 Etching NATIONAL CASH REGISTER CO 28 May 1971 [2 July 1970] 17725/71 Heading B6J An N-type silicon semiconductor wafer 10, Fig. 3, has formed thereon by oxidation a silicon dioxide layer 15 formed thereon and formed with windows to expose p-type regions of the wafer. An aluminium film 20 is evaporated on to the layer 15 and the exposed regions of the wafer. A photoresist is deposited on the film 20, and selectively removed by a solvent after exposure to ultraviolet radiation through a mask. The exposed film 20 is then etched by a stream of phosphoric acid directed thereon while the wafer and film assembly is rotated to remove gas bubbles formed during etching, to produce a semiconductor device having contacts 25, 26, 27, of which the last two contact the p-type regions. Three toothed spinners 20, Fig. 1, are provided. Each spinner supports an article to be etched and is rotated at 2;000 r.p.m. by a motor 52 through a gear 43, from which it can be disconnected by a cam 41. Etchant 45 is heated in a reservoir 49 by a heater 47 and pumped into a reservoir 46, whence it passes through a tube 54 into the spinner and on to the article, excess etchant collecting in a housing 431 from which it returns to the reservoir 45.

GB07725/71A
1970-07-02
1971-05-28
Method of producing a pattern in a metallic film

Expired

GB1286219A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US5180870A

1970-07-02
1970-07-02

Publications (1)

Publication Number
Publication Date

GB1286219A
true

GB1286219A
(en)

1972-08-23

Family
ID=21973487
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB07725/71A
Expired

GB1286219A
(en)

1970-07-02
1971-05-28
Method of producing a pattern in a metallic film

Country Status (8)

Country
Link

US
(1)

US3674579A
(en)

BE
(1)

BE769403A
(en)

BR
(1)

BR7103942D0
(en)

CH
(1)

CH544160A
(en)

DE
(1)

DE2132109A1
(en)

FR
(1)

FR2100151A5
(en)

GB
(1)

GB1286219A
(en)

ZA
(1)

ZA713875B
(en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

JPS5915394B2
(en)

1978-08-31
1984-04-09
富士通株式会社

Thick film fine pattern generation method

NL8204307A
(en)

1982-11-08
1984-06-01
Philips Nv

METHOD FOR ETCHING CAVES AND OPENINGS IN SUBSTRATES AND DEVICE FOR CARRYING OUT THIS METHOD

US5185056A
(en)

1991-09-13
1993-02-09
International Business Machines Corporation
Method and apparatus for etching semiconductor wafers and developing resists

1970

1970-07-02
US
US51808A
patent/US3674579A/en
not_active
Expired – Lifetime

1971

1971-05-28
GB
GB07725/71A
patent/GB1286219A/en
not_active
Expired

1971-06-15
ZA
ZA713875A
patent/ZA713875B/en
unknown

1971-06-24
BR
BR3942/71A
patent/BR7103942D0/en
unknown

1971-06-28
DE
DE19712132109
patent/DE2132109A1/en
active
Pending

1971-07-01
CH
CH971671A
patent/CH544160A/en
not_active
IP Right Cessation

1971-07-02
FR
FR7124199A
patent/FR2100151A5/fr
not_active
Expired

1971-07-02
BE
BE769403A
patent/BE769403A/en
unknown

Also Published As

Publication number
Publication date

BE769403A
(en)

1971-11-16

CH544160A
(en)

1973-11-15

US3674579A
(en)

1972-07-04

BR7103942D0
(en)

1973-04-12

ZA713875B
(en)

1972-01-26

DE2132109A1
(en)

1972-02-10

FR2100151A5
(en)

1972-03-17

Contact information