GB1295422A – – Google Patents
GB1295422A – – Google Patents
Info
Publication number
GB1295422A
GB1295422A
GB1295422DA
GB1295422A
GB 1295422 A
GB1295422 A
GB 1295422A
GB 1295422D A
GB1295422D A
GB 1295422DA
GB 1295422 A
GB1295422 A
GB 1295422A
Authority
GB
United Kingdom
Prior art keywords
zone
zones
layer
buried
type
Prior art date
1969-02-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1969-02-13
Filing date
1970-02-10
Publication date
1972-11-08
1970-02-10
Application filed
filed
Critical
1972-11-08
Publication of GB1295422A
publication
Critical
patent/GB1295422A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/037—Diffusion-deposition
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/085—Isolated-integrated
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/145—Shaped junctions
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00—Metal treatment
Y10S148/151—Simultaneous diffusion
Abstract
1295422 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 10 Feb 1970 [13 Feb 1969] 6361/70 Heading H1K A thyristor is formed in the following manner; a P-type silicon substrate 1, Fig. 7, has arsenic deposited on one surface to form a region 3, and further depositions of boron to form zones 4; a phosphorus-doped N-type epitaxial layer 5 is formed on the surface, and boron deposited on its surface to form zones 6 and 7; a second N- type epitaxial layer 8 is deposited on layer 5, and boron doped zones 9, 10 formed in its surface; the depositions are then ” driven in ” so that zones 4, 7, 10 combine to form isolation zones 12, and zone 9 contacts the ” buried ” zone 6; a P-type zone 11 is diffused into the surface of the layer 8, and an N-type zone 15 formed within the zone 11; electrodes 17, 20 and 21 contact the anode, 9, 6, the gate zone 11, and the cathode 15 respectively. The ” buried ” region 3 prevents a parasitic transistor forming from the substrate 1, layer 5 and zone 6. The thyristor may be incorporated in an integrated circuit, e.g. to form part of an oscillator. Gold doping may be used to improve the switching rate. The ” buried ” zone 6 may alternatively be formed by ion implantation.
GB1295422D
1969-02-13
1970-02-10
Expired
GB1295422A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
FR6903480A
FR2031940A5
(en)
1969-02-13
1969-02-13
Publications (1)
Publication Number
Publication Date
GB1295422A
true
GB1295422A
(en)
1972-11-08
Family
ID=9029030
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1295422D
Expired
GB1295422A
(en)
1969-02-13
1970-02-10
Country Status (8)
Country
Link
US
(1)
US3676755A
(en)
JP
(1)
JPS509554B1
(en)
BE
(1)
BE745832A
(en)
DE
(1)
DE2005940C3
(en)
FR
(1)
FR2031940A5
(en)
GB
(1)
GB1295422A
(en)
NL
(1)
NL7001769A
(en)
SE
(1)
SE363701B
(en)
Families Citing this family (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL7009091A
(en)
*
1970-06-20
1971-12-22
JPS5837699B2
(en)
*
1974-12-16
1983-08-18
三菱電機株式会社
handmade takiokusouchi
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3445734A
(en)
*
1965-12-22
1969-05-20
Ibm
Single diffused surface transistor and method of making same
US3575646A
(en)
*
1966-09-23
1971-04-20
Westinghouse Electric Corp
Integrated circuit structures including controlled rectifiers
FR1504781A
(en)
*
1966-10-28
1967-12-08
Csf
New pnp transistor for integrated circuits
US3502951A
(en)
*
1968-01-02
1970-03-24
Singer Co
Monolithic complementary semiconductor device
1969
1969-02-13
FR
FR6903480A
patent/FR2031940A5/fr
not_active
Expired
1970
1970-02-07
NL
NL7001769A
patent/NL7001769A/xx
unknown
1970-02-10
GB
GB1295422D
patent/GB1295422A/en
not_active
Expired
1970-02-10
SE
SE01687/70A
patent/SE363701B/xx
unknown
1970-02-10
DE
DE2005940A
patent/DE2005940C3/en
not_active
Expired
1970-02-11
BE
BE745832D
patent/BE745832A/en
unknown
1970-02-11
US
US10518A
patent/US3676755A/en
not_active
Expired – Lifetime
1970-02-12
JP
JP45011835A
patent/JPS509554B1/ja
active
Pending
Also Published As
Publication number
Publication date
NL7001769A
(en)
1970-08-17
DE2005940C3
(en)
1979-11-22
DE2005940A1
(en)
1970-09-10
JPS509554B1
(en)
1975-04-14
DE2005940B2
(en)
1979-03-29
SE363701B
(en)
1974-01-28
BE745832A
(en)
1970-08-11
FR2031940A5
(en)
1970-11-20
US3676755A
(en)
1972-07-11
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Legal Events
Date
Code
Title
Description
1973-03-21
PS
Patent sealed [section 19, patents act 1949]
1982-09-08
PCNP
Patent ceased through non-payment of renewal fee
