GB1300235A – Preparation and purification of semiconducting gallium compounds
– Google Patents
GB1300235A – Preparation and purification of semiconducting gallium compounds
– Google Patents
Preparation and purification of semiconducting gallium compounds
Info
Publication number
GB1300235A
GB1300235A
GB63481/69A
GB6348169A
GB1300235A
GB 1300235 A
GB1300235 A
GB 1300235A
GB 63481/69 A
GB63481/69 A
GB 63481/69A
GB 6348169 A
GB6348169 A
GB 6348169A
GB 1300235 A
GB1300235 A
GB 1300235A
Authority
GB
United Kingdom
Prior art keywords
silicon
melt
silica
reaction
additive
Prior art date
1969-12-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB63481/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1969-12-31
Filing date
1969-12-31
Publication date
1972-12-20
1969-12-31
Application filed by Sumitomo Electric Industries Ltd
filed
Critical
Sumitomo Electric Industries Ltd
1969-12-31
Priority to GB63481/69A
priority
Critical
patent/GB1300235A/en
1972-12-20
Publication of GB1300235A
publication
Critical
patent/GB1300235A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
C—CHEMISTRY; METALLURGY
C30—CRYSTAL GROWTH
C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
C30B29/10—Inorganic compounds or compositions
C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
C30B29/42—Gallium arsenide
Abstract
1300235 Semi-conducting gallium compounds SUMITOMO ELECTRIC INDUSTRIES Ltd 31 Dec 1969 63481/69 Heading C1A Semi-conducting compounds of gallium such as GaAs, GaP, (Ga, In)As, (Ga, Al)As, Ga(As, P) or (Ga, In)P are obtained in the form of crystals having a low or controlled silicon content by forming a melt containing the constituents of the required compound in a reaction vessel (usually made of silica) which is enclosed in a silica tube, in the presence of a first additive selected from Si, Al, B and compounds of these, other than oxides, and a second additive which reacts with the melt to form a gallous oxide atmosphere and is selected from O 2 , CO 2 , and metal oxides which decompose under the reaction conditions, such as Ga 2 O 3 , As 2 O 3 or AS 2 O 5 , and forming the crystals from the melt. The Ga 2 O oxide atmosphere reacts with the first additive (and any other silicon initially present in the melt) to form an oxide film which protects the melt from contamination by reaction with silica in the reaction vessel and/or tube, even if the Ga 2 O pressure subsequently drops, e.g. due to reaction with Ga or As. If the first additive is silicon or a silicon compound, products having a controlled level of silicon contamination may be produced by selecting the quantities of the two additives so that not enough Ga 2 O is produced to remove all the silicon. Other dopants may also be added to the melt, Sn, Te and Cr being exemplified. In Examples 1 to 6 GaAs is prepared by the “horizontal Bridgeman” technique in the presence of As 2 O 3 and silicon. Fig. 3 shows apparatus which may be used and the temperature profile of the furnace. The silica reaction tube, 9, contains arsenic, 13, at one end while the other, hotter, end contains gallium and silicon in a silica vessel, 14, and some As 2 O 3 . The narrowness of the connecting tube, 11, prevents the Ga 2 O which is formed in the hot zone from diffusing to the cooler zone and condensing. The vessel, 14, also contains a seed crystal of GaAs, 15, on to which the product crystallizes as the furnace is moved slowly to the left. The method of the invention may also be used to purify pre-formed gallium compounds by melting them in the presence of the two additives and re-crystallization: the “zone refining” and “zone levelling” techniques may also be used.
GB63481/69A
1969-12-31
1969-12-31
Preparation and purification of semiconducting gallium compounds
Expired
GB1300235A
(en)
Priority Applications (1)
Application Number
Priority Date
Filing Date
Title
GB63481/69A
GB1300235A
(en)
1969-12-31
1969-12-31
Preparation and purification of semiconducting gallium compounds
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
GB63481/69A
GB1300235A
(en)
1969-12-31
1969-12-31
Preparation and purification of semiconducting gallium compounds
Publications (1)
Publication Number
Publication Date
GB1300235A
true
GB1300235A
(en)
1972-12-20
Family
ID=10489061
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB63481/69A
Expired
GB1300235A
(en)
1969-12-31
1969-12-31
Preparation and purification of semiconducting gallium compounds
Country Status (1)
Country
Link
GB
(1)
GB1300235A
(en)
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE3234387A1
(en)
*
1981-09-18
1983-07-28
Sumitomo Electric Industries, Ltd., Osaka
METHOD FOR DOPING A GAAS SINGLE CRYSTAL WITH BOR
DE3815575A1
(en)
*
1987-05-08
1988-12-15
Furukawa Electric Co Ltd
SEMI-INSULATING GAAS SINGLE CRYSTAL WITH CONTROLLED CONCENTRATION OF IMPURITIES AND METHOD FOR THE PRODUCTION THEREOF
1969
1969-12-31
GB
GB63481/69A
patent/GB1300235A/en
not_active
Expired
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE3234387A1
(en)
*
1981-09-18
1983-07-28
Sumitomo Electric Industries, Ltd., Osaka
METHOD FOR DOPING A GAAS SINGLE CRYSTAL WITH BOR
DE3815575A1
(en)
*
1987-05-08
1988-12-15
Furukawa Electric Co Ltd
SEMI-INSULATING GAAS SINGLE CRYSTAL WITH CONTROLLED CONCENTRATION OF IMPURITIES AND METHOD FOR THE PRODUCTION THEREOF
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Legal Events
Date
Code
Title
Description
1973-05-02
PS
Patent sealed
1990-02-07
PE20
Patent expired after termination of 20 years
