GB1305447A

GB1305447A – – Google Patents

GB1305447A – – Google Patents

Info

Publication number
GB1305447A

GB1305447A
GB3423570A
GB3423570A
GB1305447A
GB 1305447 A
GB1305447 A
GB 1305447A
GB 3423570 A
GB3423570 A
GB 3423570A
GB 3423570 A
GB3423570 A
GB 3423570A
GB 1305447 A
GB1305447 A
GB 1305447A
Authority
GB
United Kingdom
Prior art keywords
signals
state
july
select
indicates
Prior art date
1969-07-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB3423570A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1969-07-30
Filing date
1970-07-15
Publication date
1973-01-31

1970-07-15
Application filed
filed
Critical

1973-01-31
Publication of GB1305447A
publication
Critical
patent/GB1305447A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits

H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses

H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential-jump barriers, and exhibiting a negative resistance characteristic

G—PHYSICS

G11—INFORMATION STORAGE

G11C—STATIC STORES

G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor

G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements

G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits

H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses

H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03K—PULSE TECHNIQUE

H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits

H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses

H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors

Abstract

1305447 Semi-conductor memory cells INTERNATIONAL BUSINESS MACHINES CORP 15 July 1970 [30 July 1969] 34235/70 Heading H3T A negative resistance device such as an SCR 10 with an open circuit gate has a D.C. bias circuit 12 and is set to one or the other state by coincidence of co-ordinate signals Xi and Yj (or Yj1) which produce, by means of C22 for example, a transient signal which is superimposed on the D.C. bias. The resistance R B of bias circuit 12 is arranged to hold SCR 10 in whichever state it has been set to, and positive signals at Xi and Yj or negative signals at Xi and Yj1 set it to one state or the other. The signals are half-select-drive signals in the coordinate conductors of a matrix (Fig. 4, not shown) of S.C.R. memory cells. The resistance values R T , R B are adjusted to ensure that a single half-select-drive signal is insufficient to cause switching. To read, a single positive halfselect-drive pulse is applied to Xi and no current at Yj1 indicates a 1 while a measurable current at Yj1 indicates a O.

GB3423570A
1969-07-30
1970-07-15

Expired

GB1305447A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US84612369A

1969-07-30
1969-07-30

Publications (1)

Publication Number
Publication Date

GB1305447A
true

GB1305447A
(en)

1973-01-31

Family
ID=25297010
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB3423570A
Expired

GB1305447A
(en)

1969-07-30
1970-07-15

Country Status (4)

Country
Link

US
(1)

US3638203A
(en)

DE
(1)

DE2034169A1
(en)

FR
(1)

FR2053265A1
(en)

GB
(1)

GB1305447A
(en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

AU622490B2
(en)

*

1988-10-31
1992-04-09
Raytheon Company
Ferroelectric memory

US5412598A
(en)

*

1992-04-27
1995-05-02
The University Of British Columbia
Bistable four layer device, memory cell, and method for storing and retrieving binary information

DE10130163B4
(en)

*

2000-11-21
2012-01-12
Siemens Ag

Arrangement for reducing carbonaceous particulate emissions from diesel engines

US6801450B2
(en)

*

2002-05-22
2004-10-05
Hewlett-Packard Development Company, L.P.
Memory cell isolation

US9220132B2
(en)

2013-06-22
2015-12-22
Robert G. Marcotte
Breakover conduction illumination devices and operating method

Family Cites Families (3)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3011155A
(en)

*

1957-11-07
1961-11-28
Bell Telephone Labor Inc
Electrical memory circuit

US2966599A
(en)

*

1958-10-27
1960-12-27
Sperry Rand Corp
Electronic logic circuit

US3021436A
(en)

*

1959-03-11
1962-02-13
Bell Telephone Labor Inc
Transistor memory cell

1969

1969-07-30
US
US846123A
patent/US3638203A/en
not_active
Expired – Lifetime

1970

1970-06-02
FR
FR7020084A
patent/FR2053265A1/fr
not_active
Withdrawn

1970-07-09
DE
DE19702034169
patent/DE2034169A1/en
active
Pending

1970-07-15
GB
GB3423570A
patent/GB1305447A/en
not_active
Expired

Also Published As

Publication number
Publication date

DE2034169A1
(en)

1971-02-11

US3638203A
(en)

1972-01-25

FR2053265A1
(en)

1971-04-16

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Legal Events

Date
Code
Title
Description

1973-06-13
PS
Patent sealed [section 19, patents act 1949]

1976-02-18
PLNP
Patent lapsed through nonpayment of renewal fees

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