GB1318821A – Construction of packages for semiconductor devices
– Google Patents
GB1318821A – Construction of packages for semiconductor devices
– Google Patents
Construction of packages for semiconductor devices
Info
Publication number
GB1318821A
GB1318821A
GB872071A
GB1318821DA
GB1318821A
GB 1318821 A
GB1318821 A
GB 1318821A
GB 872071 A
GB872071 A
GB 872071A
GB 1318821D A
GB1318821D A
GB 1318821DA
GB 1318821 A
GB1318821 A
GB 1318821A
Authority
GB
United Kingdom
Prior art keywords
conductors
support
glass frit
conductor
semi
Prior art date
1971-03-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB872071A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-03-26
Filing date
1971-03-26
Publication date
1973-05-31
1971-03-26
Application filed by Ferranti PLC
filed
Critical
Ferranti PLC
1973-05-31
Publication of GB1318821A
publication
Critical
patent/GB1318821A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/02—Containers; Seals
H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/02—Containers; Seals
H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
H01L23/495—Lead-frames or other flat leads
H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
H01L2224/45001—Core members of the connector
H01L2224/45099—Material
H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
H01L2224/45144—Gold (Au) as principal constituent
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H01L2224/4805—Shape
H01L2224/4809—Loop shape
H01L2224/48091—Arched
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/42—Wire connectors; Manufacturing methods related thereto
H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H01L2224/481—Disposition
H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
H01L2224/732—Location after the connecting process
H01L2224/73251—Location after the connecting process on different surfaces
H01L2224/73265—Layer and wire connectors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L24/42—Wire connectors; Manufacturing methods related thereto
H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L24/42—Wire connectors; Manufacturing methods related thereto
H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01079—Gold [Au]
Abstract
1318821 Semi-conductor devices FERRANTI Ltd 24 March 1972 [26 March 1971 1 May 1971] 8720/71 and 12599/71 Heading H1K An enclosure 10 for a semi-conductor device (Fig. 2) comprises a lead frame (Fig. 1) wherein 14 conductors 12 extend in groups of 7 from opposing sides of a quadrangular boundary 13; the free ends of the conductors being tapered to mutually inclined points 16 distributed uniformly parallel to the opposing sides of the boundary. The ends of the conductors are rigidly secured to the periphery of a dished metal support 20 by a composite glass frit layer by cleaning and oxidizing the support, firming on the periphery a glass frit base layer 21 of m.p. >1000‹ C. and forming thereon a further glass frit layer 22 of m.p. 600‹ C. The central part of the support is deoxidized and selectively silver plated, and a gold flake 23 is centrally bonded to the silver, after which layer 22 is melted and the conductor ends placed thereon. A Si semi-conductor device 24 is alloyed to the gold flake, and the contacts of its remote face are connected to the adjacent conductor ends 16 by ultrasonically or thermocompressively bonded Au wires. A dished metal cap 26 is cleaned, oxidized and fired with a glass frit base layer 27 of m.p. > 1000‹ C. which is coated with epoxy resin 28 ,applied to the conductors, and cured at 100‹ C. The support, glass frit layers, and capping member should have similar coefficients of linear thermal expansion approximating to those of the conductors and of the semi-conductor, and the support and capping members may be, e.g. nickel iron alloy. In a modification (Fig. 3, not shown) the epoxy resin is replaceable by a glass frit coating of m.p. <550‹ C. which is melted to seal on the capping member, which with the support may be of nickel or steel. In a further modification (Fig. 4, not shown) an intermediate member, e.g. of Fe-Ni-Co is interposed between the support and the semiconductor device, and the conductors may be of Fe-Ni-Co. Subsequently the enclosure may be encased in a moulded plastic, e.g. epoxy resin or silicone compound (Fig. 5, not shown) after which the boundary is removed to leave discrete conductors which are bent at right angles. A preformed pattern of leads on an insulent substrate may be substituted for the Au wires. The process of construction may be carried out automatically.
GB872071A
1971-03-26
1971-03-26
Construction of packages for semiconductor devices
Expired
GB1318821A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
GB872071
1971-03-26
Publications (1)
Publication Number
Publication Date
GB1318821A
true
GB1318821A
(en)
1973-05-31
Family
ID=9857945
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB872071A
Expired
GB1318821A
(en)
1971-03-26
1971-03-26
Construction of packages for semiconductor devices
Country Status (1)
Country
Link
GB
(1)
GB1318821A
(en)
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2280062A
(en)
*
1993-07-12
1995-01-18
Korea Electronics Telecomm
Method of packaging a power semiconductor device and package produced by the method
GB2324411A
(en)
*
1997-04-18
1998-10-21
Lg Semicon Co Ltd
Lead frame structure and semiconductor package
EP1187197A2
(en)
*
2000-08-31
2002-03-13
Nec Corporation
Package for a semiconductor chip with a thermally conductive base and resin walls
1971
1971-03-26
GB
GB872071A
patent/GB1318821A/en
not_active
Expired
Cited By (7)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2280062A
(en)
*
1993-07-12
1995-01-18
Korea Electronics Telecomm
Method of packaging a power semiconductor device and package produced by the method
GB2280062B
(en)
*
1993-07-12
1997-04-09
Korea Electronics Telecomm
Method of packaging a power semiconductor device and package produced by the method
GB2324411A
(en)
*
1997-04-18
1998-10-21
Lg Semicon Co Ltd
Lead frame structure and semiconductor package
GB2324411B
(en)
*
1997-04-18
2000-02-02
Lg Semicon Co Ltd
Lead frame and semiconductor package using same and fabrication method thereof
EP1187197A2
(en)
*
2000-08-31
2002-03-13
Nec Corporation
Package for a semiconductor chip with a thermally conductive base and resin walls
EP1187197A3
(en)
*
2000-08-31
2004-03-17
NEC Compound Semiconductor Devices, Ltd.
Package for a semiconductor chip with a thermally conductive base and resin walls
US7429791B2
(en)
2000-08-31
2008-09-30
Nec Corporation
Semiconductor device in a resin sealed package with a radiating plate and manufacturing method thereof
Similar Documents
Publication
Publication Date
Title
US5087961A
(en)
1992-02-11
Semiconductor device package
US4894752A
(en)
1990-01-16
Lead frame for a semiconductor device
GB1286086A
(en)
1972-08-16
Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating
US3264712A
(en)
1966-08-09
Semiconductor devices
KR890702249A
(en)
1989-12-23
Method for manufacturing semiconductor device package and device therefor
US3871018A
(en)
1975-03-11
Construction of packages for semiconductor devices
GB1318821A
(en)
1973-05-31
Construction of packages for semiconductor devices
GB1377930A
(en)
1974-12-18
Semiconductor devices and process for making the same
JPS6077446A
(en)
1985-05-02
Sealed semiconductor device
JPS5848442A
(en)
1983-03-22
Sealing of electronic parts
JPS54161270A
(en)
1979-12-20
Lead frame for integrated-circuit device
JP2555428B2
(en)
1996-11-20
Lead frame and method of manufacturing semiconductor device using the same
JPH03149865A
(en)
1991-06-26
Lead frame
JPS57157550A
(en)
1982-09-29
Semiconductor device
JPS57136352A
(en)
1982-08-23
Semiconductor device of resin potted type
JPS5660038A
(en)
1981-05-23
Semiconductor device
JPS5596666A
(en)
1980-07-23
Method of fabricating semiconductor device substrate
JPS5710951A
(en)
1982-01-20
Semiconductor device
JPS634945B2
(en)
1988-02-01
GB1136574A
(en)
1968-12-11
Improvements in or relating to semiconductor devices, particularly for high voltage, and methods of manufacturing such devices
JP2795069B2
(en)
1998-09-10
Semiconductor device
JPH01115151A
(en)
1989-05-08
Lead frame for semiconductor device
JPS6178150A
(en)
1986-04-21
Lead frame for resin seal type semiconductor device
KR800000215B1
(en)
1980-03-22
Partial plating method
JPS59107547A
(en)
1984-06-21
Semiconductor device
Legal Events
Date
Code
Title
Description
1973-10-10
PS
Patent sealed
1976-10-20
PLNP
Patent lapsed through nonpayment of renewal fees
Download PDF in English
