GB1346950A

GB1346950A – Production of schottky contacts
– Google Patents

GB1346950A – Production of schottky contacts
– Google Patents
Production of schottky contacts

Info

Publication number
GB1346950A

GB1346950A
GB5253571A
GB5253571A
GB1346950A
GB 1346950 A
GB1346950 A
GB 1346950A
GB 5253571 A
GB5253571 A
GB 5253571A
GB 5253571 A
GB5253571 A
GB 5253571A
GB 1346950 A
GB1346950 A
GB 1346950A
Authority
GB
United Kingdom
Prior art keywords
chromium
aluminium
etching
nov
thick
Prior art date
1970-11-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB5253571A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens AG

Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-11-20
Filing date
1971-11-12
Publication date
1974-02-13

1971-11-12
Application filed by Siemens AG
filed
Critical
Siemens AG

1974-02-13
Publication of GB1346950A
publication
Critical
patent/GB1346950A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L23/00—Details of semiconductor or other solid state devices

H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor

H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto

H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto

H01L24/02—Bonding areas ; Manufacturing methods related thereto

H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process

H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00

H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto

H01L2224/02—Bonding areas; Manufacturing methods related thereto

H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process

H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00

H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto

H01L2224/42—Wire connectors; Manufacturing methods related thereto

H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process

H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector

H01L2224/484—Connecting portions

H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/10—Details of semiconductor or other solid state devices to be connected

H01L2924/11—Device type

H01L2924/12—Passive devices, e.g. 2 terminal devices

H01L2924/1203—Rectifying Diode

H01L2924/12032—Schottky diode

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/10—Details of semiconductor or other solid state devices to be connected

H01L2924/11—Device type

H01L2924/14—Integrated circuits

Abstract

1346950 Etching SIEMENS AG 12 Nov 1971 [20 Nov 1970] 52535/71 Heading B6J [Also in Division H1] One or more Schottky contacts are made to one face of a semi-conductor body by depositing chromium over the face, masking the chromium at the contact sites with deposited aluminium, and then etching away the unmasked chromium in hydrochloric acid having a concentration of at least 1% by weight (preferably 6%). The aluminium may be restricted to the required areas either by vapour depositing it through a mask or by removing unrequired parts of an overall deposit by etching with phosphoric acid through a developed photoresist mask. Typically the chromium is from 20-100 mm. thick while the aluminium to which gold contact wires are to be thermo-compression or ultrasonically bonded, is from 50-150 mm. thick. The contacted body may be subdivided to provide a number of devices.

GB5253571A
1970-11-20
1971-11-12
Production of schottky contacts

Expired

GB1346950A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

DE2057204A

DE2057204C3
(en)

1970-11-20
1970-11-20

Process for the production of metal-semiconductor contacts

Publications (1)

Publication Number
Publication Date

GB1346950A
true

GB1346950A
(en)

1974-02-13

Family
ID=5788703
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB5253571A
Expired

GB1346950A
(en)

1970-11-20
1971-11-12
Production of schottky contacts

Country Status (10)

Country
Link

US
(1)

US3819432A
(en)

JP
(1)

JPS5316671B1
(en)

BE
(1)

BE775571A
(en)

CA
(1)

CA920723A
(en)

DE
(1)

DE2057204C3
(en)

FR
(1)

FR2115205B1
(en)

GB
(1)

GB1346950A
(en)

IT
(1)

IT940614B
(en)

LU
(1)

LU64296A1
(en)

NL
(1)

NL7115929A
(en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

FR2360993A1
(en)

*

1976-08-03
1978-03-03
Lignes Telegraph Telephon

IMPROVEMENT OF THE MANUFACTURING PROCESSES OF GOLD-SILICON BARRIER SCHOTTKY DIODES

US4215156A
(en)

*

1977-08-26
1980-07-29
International Business Machines Corporation
Method for fabricating tantalum semiconductor contacts

US5254869A
(en)

*

1991-06-28
1993-10-19
Linear Technology Corporation
Aluminum alloy/silicon chromium sandwich schottky diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3094489A
(en)

*

1959-08-31
1963-06-18
Monsanto Chemicals
Method and composition for brightening aluminum

US3423205A
(en)

*

1964-10-30
1969-01-21
Bunker Ramo
Method of making thin-film circuits

US3368124A
(en)

*

1965-12-09
1968-02-06
Rca Corp
Semiconductor devices

US3597667A
(en)

*

1966-03-01
1971-08-03
Gen Electric
Silicon oxide-silicon nitride coatings for semiconductor devices

1970

1970-11-20
DE
DE2057204A
patent/DE2057204C3/en
not_active
Expired

1971

1971-11-12
GB
GB5253571A
patent/GB1346950A/en
not_active
Expired

1971-11-16
IT
IT3113471A
patent/IT940614B/en
active

1971-11-17
FR
FR7141083A
patent/FR2115205B1/fr
not_active
Expired

1971-11-18
NL
NL7115929A
patent/NL7115929A/xx
unknown

1971-11-18
LU
LU64296D
patent/LU64296A1/xx
unknown

1971-11-19
BE
BE775571A
patent/BE775571A/en
unknown

1971-11-19
CA
CA128072A
patent/CA920723A/en
not_active
Expired

1971-11-20
JP
JP9352971A
patent/JPS5316671B1/ja
active
Pending

1971-11-22
US
US20090071
patent/US3819432A/en
not_active
Expired – Lifetime

Also Published As

Publication number
Publication date

BE775571A
(en)

1972-03-16

LU64296A1
(en)

1972-06-02

DE2057204B2
(en)

1974-07-11

CA920723A
(en)

1973-02-06

US3819432A
(en)

1974-06-25

FR2115205A1
(en)

1972-07-07

NL7115929A
(en)

1972-05-24

JPS5316671B1
(en)

1978-06-02

FR2115205B1
(en)

1977-04-22

DE2057204C3
(en)

1975-02-27

IT940614B
(en)

1973-02-20

DE2057204A1
(en)

1972-06-08

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Legal Events

Date
Code
Title
Description

1974-07-03
PS
Patent sealed [section 19, patents act 1949]

1979-06-13
PCNP
Patent ceased through non-payment of renewal fee

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