GB1354527A – Semiconductor devices
– Google Patents
GB1354527A – Semiconductor devices
– Google Patents
Semiconductor devices
Info
Publication number
GB1354527A
GB1354527A
GB2844171A
GB2844171A
GB1354527A
GB 1354527 A
GB1354527 A
GB 1354527A
GB 2844171 A
GB2844171 A
GB 2844171A
GB 2844171 A
GB2844171 A
GB 2844171A
GB 1354527 A
GB1354527 A
GB 1354527A
Authority
GB
United Kingdom
Prior art keywords
zone
zones
collector
base
insulant
Prior art date
1970-06-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2844171A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-06-20
Filing date
1971-06-17
Publication date
1974-06-05
1971-06-17
Application filed by Philips Electronic and Associated Industries Ltd
filed
Critical
Philips Electronic and Associated Industries Ltd
1974-06-05
Publication of GB1354527A
publication
Critical
patent/GB1354527A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
H01L27/0772—Vertical bipolar transistor in combination with resistors only
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
H01L27/0826—Combination of vertical complementary transistors
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
H03K19/086—Emitter coupled logic
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
Abstract
1354527 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 17 June 1971 [20 June 1970] 28441/71 Heading H1K A semi-conductor integrated circuit (Figs. 1, 2) comprises a wafer 1 incorporating transistors T 1 , T 2 having zones 4, 5, 6, and 7, 8, 9 mutually separated by insulation zone 2 and each comprising groups of three alternate conductivity zones of which zones 6, 9 underlie zones 5, 8 which underlie zones 4, 7; the pairs being of respectively similar conductivity types. Zone 5 also comprises part 10 between zones 14 and 6 and a coherent cup shaped part 2 surrounding zone 6, together co-operating with zone 9 of T 2 to form a surrounding insulant PN junction 11 for transistor T 1 . Transistor T 2 also comprises three successive zones of alternate conductivity types with dopant concentration in the centre zone exceeding that in the surrounding outer zone. The control zone forms an insulating PN junction round the transistor with the collector zone. The substrate operates as a common collector (or emitter) for plural transistors of a given type and further insulated transistors may be used. Transistor T 2 is of transversal bipolar type with first emitter zone 7 surrounded by second base zone 8; the collector being zone 9. T 1 is also bipolar with emitter (or collector) zone 4, base zone 10, 2 and collector (or emitter) zone 6 respectively. It may also be an FET with annular zone 4 as gate, and the source and drain formed by the parts of 10, 2 situated inside and outside the annulus, while zone 6 forms a second gate. Zone 10 may alternatively be in two parts coherent over a channel, permitting zone 4 to laterally overlap zone 10 and cohere with zone 6. In bipolar transistor T 1 zone 6 is separated from the substrate by base zone 10, 2 so that stray transistor action is avoided. The insulant PN junction 11 forms a simple diode which is reversed biased automatically, and the base-collector junction of T 1 comprises parts 12, 13 to form a diode in parallel with the base-collector junction 12 to prevent bottoming (Fig. 3 not shown). The collector zone 9 of T 2 is a substrate 9a of a one conductivity type on which is superimposed an epitaxial layer of a similar conductivity type; the cup shaped zone 2 having a surface zone 2a of opposed conductivity type surrounding part 6 of epitaxial layer 9b at the surface and extending to a region 2b of opposed conductivity type at the boundary of layers 9a, 9b; the zone 2a forming a circumferential wall of the cup of which buried region 2b is the bottom, and part 6 of the epitaxial layer within the cup is the collector of T 1 . The resistivity of substrate 9a is lower ohmically than the epitaxial layer 9b, and collector zone 6 may have a control zone 14, while substrate 9a is connectible to another remaining circuit element over a conductive track through an aperture of the insulant layer to contact zone 15. The collector of T 1 has a buried part 16 to reduce its series resistance and the remaining semi-conductor zones are connectible to other circuit elements over conductive tracks through the surface insulating layer 17. In a modification (Figs. 4 to 6, not shown) of differing geometry the cup shaped insulant part of the base zone is connected to the collector zone over a conductive track extending through an aperture of a surface insulant layer; so as to form a Schottky diode junction between the base and collector zones. In a further modification (Fig. 7) a substrate 40 has a two part composite epitaxial layer 41, 42 on a substrate 40 containing emitter zone 44, base zone 45, 46 and collector zone 47 of a first self insulating transistor separated by insulating PN junction 48 from a second similar transistor having emitter zone 49, base zone 50 and collector zone 40 to 43. A further insulated complementary transistor is provided having emitter zone 51, base zone 52, and collector zone 53; the latter being cup shaped to form an insulant PN junction 48 with collector zone 40 to 43. Cup shaped zones 46, 53 are coherent to connect the transistors in cascade (Fig. 8, not shown). Collector zones 47 and 40 to 43 have buried parts 54 and 43 to reduce collector series resistance, and contact zones 55, 56 are provided in collector zone 47 and base zone 52. In manufacture the substrate 40 is of N silicon masked with an oxide layer having apertures etched over photoresist. This is thermally doped with B to form the buried insulation zone after which the N epitaxial layer 41 is grown, and into this As or Sb is thermally doped to form the buried parts 43, 54 during which the buried B zone diffuses into layer 41. Further B is thermally diffused from the surface into regions surrounding part of the epitaxial layer to define the walls of the cup shaped region 46, and regions 45, 50, 51 are formed by further surface thermal diffusion of B. Emitter zones 44, 49 and control zones 55, 56 are formed by thermal diffusion of P and thermal annealing, while diffusion of B from the buried zone continues until a closed cup shaped P conductivity zone 46 is formed at the upper surface of the epitaxial layer. B or As doping may be used in the buried part covered by zone 54 and A1 or P doping at the edge of the buried part. The several surface zones may be contacted through etched apertures of the surface insulant layer by vapour deposited A1 etched to pattern, and the device may be encapsulated. Alternatively doping may be by ion implantation from the surface. The substrate may be Ge or A
GB2844171A
1970-06-20
1971-06-17
Semiconductor devices
Expired
GB1354527A
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
NL7009089A
NL7009089A
(en)
1970-06-20
1970-06-20
NL7009090A
NL7009090A
(en)
1970-06-20
1970-06-20
Publications (1)
Publication Number
Publication Date
GB1354527A
true
GB1354527A
(en)
1974-06-05
Family
ID=26644553
Family Applications (2)
Application Number
Title
Priority Date
Filing Date
GB2844271A
Expired
GB1349101A
(en)
1970-06-20
1971-06-17
Electronic switch
GB2844171A
Expired
GB1354527A
(en)
1970-06-20
1971-06-17
Semiconductor devices
Family Applications Before (1)
Application Number
Title
Priority Date
Filing Date
GB2844271A
Expired
GB1349101A
(en)
1970-06-20
1971-06-17
Electronic switch
Country Status (7)
Country
Link
BE
(2)
BE768762A
(en)
CA
(1)
CA965518A
(en)
CH
(1)
CH531258A
(en)
DE
(2)
DE2128920A1
(en)
FR
(2)
FR2095386B1
(en)
GB
(2)
GB1349101A
(en)
NL
(2)
NL7009090A
(en)
Families Citing this family (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2559323B1
(en)
*
1984-02-08
1986-06-20
Labo Electronique Physique
ELEMENTARY LOGIC CIRCUIT REALIZED USING GALLIUM ARSENIDE FIELD EFFECT TRANSISTORS AND COMPATIBLE WITH ECL 100 K TECHNOLOGY
IT1218230B
(en)
*
1988-04-28
1990-04-12
Sgs Thomson Microelectronics
PROCEDURE FOR THE FORMATION OF AN INTEGRATED CIRCUIT ON A TYPE N SUBSTRATE, INCLUDING VERTICAL PNP AND NPN TRANSISTORS AND ISOLATED BETWEEN THEM
Family Cites Families (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR1539042A
(en)
*
1967-06-30
1968-09-13
Radiotechnique Coprim Rtc
Manufacturing process of transistors in an integrated circuit
FR1539043A
(en)
*
1967-06-30
1968-09-13
Radiotechnique Coprim Rtc
Integrated circuit comprising a transistor and its manufacturing process
1970
1970-06-20
NL
NL7009090A
patent/NL7009090A/xx
unknown
1970-06-20
NL
NL7009089A
patent/NL7009089A/xx
unknown
1971
1971-06-11
DE
DE19712128920
patent/DE2128920A1/en
active
Pending
1971-06-11
DE
DE19712128934
patent/DE2128934C3/en
not_active
Expired
1971-06-17
CA
CA115,897A
patent/CA965518A/en
not_active
Expired
1971-06-17
CH
CH887171A
patent/CH531258A/en
not_active
IP Right Cessation
1971-06-17
GB
GB2844271A
patent/GB1349101A/en
not_active
Expired
1971-06-17
GB
GB2844171A
patent/GB1354527A/en
not_active
Expired
1971-06-18
BE
BE768762A
patent/BE768762A/en
unknown
1971-06-18
FR
FR7122281A
patent/FR2095386B1/fr
not_active
Expired
1971-06-18
BE
BE768761A
patent/BE768761A/en
unknown
1971-06-18
FR
FR7122282A
patent/FR2099227A5/fr
not_active
Expired
Also Published As
Publication number
Publication date
CA965518A
(en)
1975-04-01
DE2128934A1
(en)
1971-12-30
NL7009090A
(en)
1971-12-22
DE2128920A1
(en)
1971-12-30
GB1349101A
(en)
1974-03-27
BE768761A
(en)
1971-12-20
CH531258A
(en)
1972-11-30
DE2128934B2
(en)
1979-06-13
FR2095386B1
(en)
1977-04-22
DE2128934C3
(en)
1980-02-14
NL7009089A
(en)
1971-12-22
FR2099227A5
(en)
1972-03-10
FR2095386A1
(en)
1972-02-11
BE768762A
(en)
1971-12-20
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Legal Events
Date
Code
Title
Description
1974-10-09
PS
Patent sealed
1982-01-20
PCNP
Patent ceased through non-payment of renewal fee
