GB1354802A - Creation of Inventions and Patents with Artificial Intelligence

GB1354802A – Schotky barrier diode
– Google Patents

GB1354802A – Schotky barrier diode
– Google Patents
Schotky barrier diode

Info

Publication number
GB1354802A

GB1354802A
GB5370671A
GB5370671A
GB1354802A
GB 1354802 A
GB1354802 A
GB 1354802A
GB 5370671 A
GB5370671 A
GB 5370671A
GB 5370671 A
GB5370671 A
GB 5370671A
GB 1354802 A
GB1354802 A
GB 1354802A
Authority
GB
United Kingdom
Prior art keywords
electrode
passivation
nov
inversion layer
barrier diode
Prior art date
1970-11-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB5370671A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-11-27
Filing date
1971-11-18
Publication date
1974-06-05

1971-11-18
Application filed by RCA Corp
filed
Critical
RCA Corp

1974-06-05
Publication of GB1354802A
publication
Critical
patent/GB1354802A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

230000004888
barrier function
Effects

0.000
title
abstract
2

VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound

O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
2

229910052737
gold
Inorganic materials

0.000
abstract
2

238000002161
passivation
Methods

0.000
abstract
2

229910001218
Gallium arsenide
Inorganic materials

0.000
abstract
1

229910052581
Si3N4
Inorganic materials

0.000
abstract
1

PNEYBMLMFCGWSK-UHFFFAOYSA-N
aluminium oxide
Inorganic materials

[O-2].[O-2].[O-2].[Al+3].[Al+3]
PNEYBMLMFCGWSK-UHFFFAOYSA-N
0.000
abstract
1

229910052751
metal
Inorganic materials

0.000
abstract
1

239000002184
metal
Substances

0.000
abstract
1

150000002739
metals
Chemical class

0.000
abstract
1

229910052703
rhodium
Inorganic materials

0.000
abstract
1

239000004065
semiconductor
Substances

0.000
abstract
1

239000000377
silicon dioxide
Substances

0.000
abstract
1

HQVNEWCFYHHQES-UHFFFAOYSA-N
silicon nitride
Chemical compound

N12[Si]34N5[Si]62N3[Si]51N64
HQVNEWCFYHHQES-UHFFFAOYSA-N
0.000
abstract
1

238000004347
surface barrier
Methods

0.000
abstract
1

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

H01L29/861—Diodes

H01L29/872—Schottky diodes

Abstract

1354802 Schottky diodes RCA CORPORATION 18 Nov 1971 [27 Nov 1970] 53706/71 Heading H1K The Schottky diode shown has a diffused or ion-implanted guard-ring 14 of opposite conductivity type to the body 12 and which when the diode is reverse biased is connected to the surface barrier electrode 20 by an inversion layer. This eliminates problems otherwise caused by the high field at the edges of the electrode. That portion 20b of the electrode under which the inversion layer is needed is preferably made thinner (as shown) than the remainder of the passivation. The passivation may be one or more of silica, alumina, and silicon nitride. Suitable semi-conductors and respective barrier metals are Si/Al, Cr, Rh; Ge/Au, Cr; and A111 Bv(e.g. GaAs)/Al, Au.

GB5370671A
1970-11-27
1971-11-18
Schotky barrier diode

Expired

GB1354802A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US9296870A

1970-11-27
1970-11-27

Publications (1)

Publication Number
Publication Date

GB1354802A
true

GB1354802A
(en)

1974-06-05

Family
ID=22236018
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB5370671A
Expired

GB1354802A
(en)

1970-11-27
1971-11-18
Schotky barrier diode

Country Status (10)

Country
Link

US
(1)

US3694719A
(en)

JP
(1)

JPS5121747B1
(en)

AU
(1)

AU459152B2
(en)

BE
(1)

BE775936A
(en)

CA
(1)

CA936970A
(en)

DE
(1)

DE2156748A1
(en)

FR
(1)

FR2115369B1
(en)

GB
(1)

GB1354802A
(en)

IT
(1)

IT939112B
(en)

NL
(1)

NL7116277A
(en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

JPS59232467A
(en)

1983-06-16
1984-12-27
Toshiba Corp
Schottky barrier diode with guard ring

JP3272242B2
(en)

1995-06-09
2002-04-08
三洋電機株式会社

Semiconductor device

US5859465A
(en)

1996-10-15
1999-01-12
International Rectifier Corporation
High voltage power schottky with aluminum barrier metal spaced from first diffused ring

US6066884A
(en)

1999-03-19
2000-05-23
Lucent Technologies Inc.
Schottky diode guard ring structures

US7439146B1
(en)

2000-08-30
2008-10-21
Agere Systems Inc.
Field plated resistor with enhanced routing area thereover

US6690037B1
(en)

2000-08-31
2004-02-10
Agere Systems Inc.
Field plated Schottky diode

US20050275057A1
(en)

2004-06-15
2005-12-15
Breen Marc L
Schottky diode with dielectric isolation

1970

1970-11-27
US
US92968A
patent/US3694719A/en
not_active
Expired – Lifetime

1971

1971-10-21
CA
CA125813A
patent/CA936970A/en
not_active
Expired

1971-10-22
IT
IT30221/71A
patent/IT939112B/en
active

1971-11-16
DE
DE19712156748
patent/DE2156748A1/en
active
Pending

1971-11-17
AU
AU35819/71A
patent/AU459152B2/en
not_active
Expired

1971-11-18
GB
GB5370671A
patent/GB1354802A/en
not_active
Expired

1971-11-24
FR
FR7142040A
patent/FR2115369B1/fr
not_active
Expired

1971-11-26
NL
NL7116277A
patent/NL7116277A/xx
not_active
Application Discontinuation

1971-11-26
BE
BE775936A
patent/BE775936A/en
unknown

1971-11-26
JP
JP46095062A
patent/JPS5121747B1/ja
active
Pending

Also Published As

Publication number
Publication date

US3694719A
(en)

1972-09-26

IT939112B
(en)

1973-02-10

JPS5121747B1
(en)

1976-07-05

FR2115369B1
(en)

1975-08-29

CA936970A
(en)

1973-11-13

FR2115369A1
(en)

1972-07-07

BE775936A
(en)

1972-03-16

AU3581971A
(en)

1973-05-24

DE2156748A1
(en)

1972-06-08

NL7116277A
(en)

1972-05-30

AU459152B2
(en)

1975-02-27

Contact information