GB1360100A

GB1360100A – Superconductive tunnelling device
– Google Patents

GB1360100A – Superconductive tunnelling device
– Google Patents
Superconductive tunnelling device

Info

Publication number
GB1360100A

GB1360100A
GB4601471A
GB4601471A
GB1360100A
GB 1360100 A
GB1360100 A
GB 1360100A
GB 4601471 A
GB4601471 A
GB 4601471A
GB 4601471 A
GB4601471 A
GB 4601471A
GB 1360100 A
GB1360100 A
GB 1360100A
Authority
GB
United Kingdom
Prior art keywords
layer
layers
barrier
electrode
tunnelling
Prior art date
1970-12-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB4601471A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-12-31
Filing date
1971-10-04
Publication date
1974-07-17

1971-10-04
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp

1974-07-17
Publication of GB1360100A
publication
Critical
patent/GB1360100A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

H—ELECTRICITY

H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

H10N60/00—Superconducting devices

H10N60/10—Junction-based devices

H10N60/12—Josephson-effect devices

Abstract

1360100 Superconductor devices INTERNATIONAL BUSINESS MACHINES CORP 4 Oct 1971 [31 Dec 1970] 46014/71 Heading H1K In a superconductor tunnelling (Josephson) device one of the electrodes contains an intermetallic compound. The compound is formed as a thin layer at the interface of two layers of its components one of which may be a superconductor, and inhibits hillock formation at the barrier. In a first arrangement a layer of Pb is deposited on a layer of Au so that a thin layer of intermetallic compound is formed therebetween. The Pb layer is plasma or thermally oxidized to form a tunnelling barrier and a second electrode comprising Pb or consecutive layers of Pb and Au is deposited on top of the barrier layer. Alternatively both electrodes may comprise consecutive Pb-Au-Pb layers or the first electrode may have this structure whilst the second electrode comprises a layer of Pb covered with Au. In a further arrangement two layers of intermetallic compound are provided in the first electrode by depositing layers in the sequence Au-Pb-Au-Pb and the upper electrode comprises a Pb-Au-Pb structure. The device may comprise a tunnelling cryotron formed on a substrate of silica glass, cork, mica or an oxidized ground plane. The tunnelling barrier may be of silicon oxide or lead oxide or in general oxides, sulphides or nitrides or may be a vacuum. The compound may comprise Pb with one of Au, Pd, Pt, Mg, Te and Tl, or In with one Cu, Ag, Au, Sn, Mg, Ni, and Bi. The metal layers may be deposited by vacuum evaporation or sputtering and different materials may be used in the first and second electrodes. The intermetallic compound and the remainder of the layer of compound forming material may be disposed between the superconductor electrode material and the barrier.

GB4601471A
1970-12-31
1971-10-04
Superconductive tunnelling device

Expired

GB1360100A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

US10308870A

1970-12-31
1970-12-31

Publications (1)

Publication Number
Publication Date

GB1360100A
true

GB1360100A
(en)

1974-07-17

Family
ID=22293330
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB4601471A
Expired

GB1360100A
(en)

1970-12-31
1971-10-04
Superconductive tunnelling device

Country Status (6)

Country
Link

JP
(1)

JPS5131156B1
(en)

CA
(1)

CA936968A
(en)

DE
(1)

DE2164684C3
(en)

FR
(1)

FR2120781A5
(en)

GB
(1)

GB1360100A
(en)

IT
(1)

IT951948B
(en)

Cited By (2)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

MD174Z
(en)

*

2009-05-19
2010-10-31
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Semiconducting material

MD323Z
(en)

*

2009-12-29
2011-08-31
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Thermoelectric microwire in glass insulation

Families Citing this family (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3848259A
(en)

*

1973-10-30
1974-11-12
Ibm
Multicontrol logic gate design

Family Cites Families (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE1178608B
(en)

*

1959-05-20
1964-09-24
Ibm

Use of an indium alloy for electrical circuit arrangements in which the conductivity of a superconductor can be reversed, and a method for their production

1971

1971-10-04
GB
GB4601471A
patent/GB1360100A/en
not_active
Expired

1971-11-26
JP
JP46094564A
patent/JPS5131156B1/ja
active
Pending

1971-12-09
FR
FR7144969A
patent/FR2120781A5/fr
not_active
Expired

1971-12-16
IT
IT32467/71A
patent/IT951948B/en
active

1971-12-23
CA
CA130916A
patent/CA936968A/en
not_active
Expired

1971-12-27
DE
DE2164684A
patent/DE2164684C3/en
not_active
Expired

Cited By (2)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

MD174Z
(en)

*

2009-05-19
2010-10-31
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Semiconducting material

MD323Z
(en)

*

2009-12-29
2011-08-31
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Thermoelectric microwire in glass insulation

Also Published As

Publication number
Publication date

JPS4713272A
(en)

1972-07-06

DE2164684B2
(en)

1981-01-08

FR2120781A5
(en)

1972-08-18

DE2164684A1
(en)

1972-07-27

CA936968A
(en)

1973-11-13

DE2164684C3
(en)

1981-09-03

IT951948B
(en)

1973-07-10

JPS5131156B1
(en)

1976-09-04

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Legal Events

Date
Code
Title
Description

1974-11-27
PS
Patent sealed [section 19, patents act 1949]

1987-05-28
PCNP
Patent ceased through non-payment of renewal fee

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