GB1360681A – Method of controlling high electric field domain in bulk semicon ductor
– Google Patents
GB1360681A – Method of controlling high electric field domain in bulk semicon ductor
– Google Patents
Method of controlling high electric field domain in bulk semicon ductor
Info
Publication number
GB1360681A
GB1360681A
GB1509471*[A
GB1509471A
GB1360681A
GB 1360681 A
GB1360681 A
GB 1360681A
GB 1509471 A
GB1509471 A
GB 1509471A
GB 1360681 A
GB1360681 A
GB 1360681A
Authority
GB
United Kingdom
Prior art keywords
domain
bulk
electric field
high electric
anodes
Prior art date
1970-05-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1509471*[A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-05-18
Filing date
1971-05-18
Publication date
1974-07-17
1970-05-18
Priority claimed from JP4163670A
external-priority
patent/JPS5526498B1/ja
1970-05-18
Priority claimed from JP45041634A
external-priority
patent/JPS5128191B1/ja
1970-12-16
Priority claimed from JP45111835A
external-priority
patent/JPS5040908B1/ja
1971-05-18
Application filed by Agency of Industrial Science and Technology
filed
Critical
Agency of Industrial Science and Technology
1974-07-17
Publication of GB1360681A
publication
Critical
patent/GB1360681A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
abstract
2
230000005684
electric field
Effects
0.000
title
1
229910001218
Gallium arsenide
Inorganic materials
0.000
abstract
1
239000000463
material
Substances
0.000
abstract
1
Classifications
G—PHYSICS
G06—COMPUTING; CALCULATING OR COUNTING
G06F—ELECTRIC DIGITAL DATA PROCESSING
G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
G06F7/38—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation
G06F7/48—Methods or arrangements for performing computations using exclusively denominational number representation, e.g. using binary, ternary, decimal representation using non-contact-making devices, e.g. tube, solid state device; using unspecified devices
G06F7/50—Adding; Subtracting
G06F7/505—Adding; Subtracting in bit-parallel fashion, i.e. having a different digit-handling circuit for each denomination
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
H03B9/00—Generation of oscillations using transit-time effects
H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N80/00—Bulk negative-resistance effect devices
H10N80/10—Gunn-effect devices
Abstract
1360681 Decoder AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY 18 May 1971 [18 May 1970 (2) 16 Dec 1970] 15094/71 Heading G4H [Also in Divisions H1 and H3] A decoder for logic systems comprises a body 1, Fig. 31, of Gunn effect semi-conductor material, e.g. GaAs, InP, branched as shown and provided with a cathode 2 and four anodes 3, 3
GB1509471*[A
1970-05-18
1971-05-18
Method of controlling high electric field domain in bulk semicon ductor
Expired
GB1360681A
(en)
Applications Claiming Priority (3)
Application Number
Priority Date
Filing Date
Title
JP4163670A
JPS5526498B1
(en)
1970-05-18
1970-05-18
JP45041634A
JPS5128191B1
(en)
1970-05-18
1970-05-18
JP45111835A
JPS5040908B1
(en)
1970-12-16
1970-12-16
Publications (1)
Publication Number
Publication Date
GB1360681A
true
GB1360681A
(en)
1974-07-17
Family
ID=27290902
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB1509471*[A
Expired
GB1360681A
(en)
1970-05-18
1971-05-18
Method of controlling high electric field domain in bulk semicon ductor
Country Status (4)
Country
Link
US
(1)
US3766372A
(en)
DE
(1)
DE2124635A1
(en)
GB
(1)
GB1360681A
(en)
NL
(1)
NL7106709A
(en)
Families Citing this family (10)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4021680A
(en)
*
1970-08-25
1977-05-03
Agency Of Industrial Science & Technology
Semiconductor device
US3903542A
(en)
*
1974-03-11
1975-09-02
Westinghouse Electric Corp
Surface gate-induced conductivity modulated negative resistance semiconductor device
US4107718A
(en)
*
1974-07-24
1978-08-15
Agency Of Industrial Science & Technology
Bulk semiconductor logic device
DE2444490C2
(en)
*
1974-09-18
1982-08-26
Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt
Method for manufacturing a microwave diode
US3991328A
(en)
*
1975-06-24
1976-11-09
Rca Corporation
Planar transferred electron logic device
US3964060A
(en)
*
1975-07-02
1976-06-15
Trw Inc.
Analog-to-digital converters utilizing gunn effect devices
JPS52144259A
(en)
*
1976-05-27
1977-12-01
Agency Of Ind Science & Technol
High-field domain logical sum circuit system
FR2385227A1
(en)
*
1977-03-25
1978-10-20
Thomson Csf
MODULAR GUNN EFFECT DEVICE BY CODE PULSES, AND PARALLEL-SERIAL DIGITAL CONVERTER USING SUCH A DEVICE
FR2408192A1
(en)
*
1977-11-04
1979-06-01
Thomson Csf
DYNAMIC MEMORY REGISTER ELEMENT USING THE GUNN EFFECT, AND OFFSET REGISTER CONSISTING OF SUCH ELEMENTS
US4894689A
(en)
*
1984-12-28
1990-01-16
American Telephone And Telegraph Company, At&T Bell Laboratories
Transferred electron device
Family Cites Families (10)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL289718A
(en)
*
1962-03-05
GB1136254A
(en)
*
1965-10-27
1968-12-11
Standard Telephones Cables Ltd
Solid state scanning system
FR1508206A
(en)
*
1966-11-18
1968-01-05
Educational device, especially for teaching set theory, logic and Boolean algebra
US3452222A
(en)
*
1967-02-01
1969-06-24
Bell Telephone Labor Inc
Circuits employing semiconductive devices characterized by traveling electric field domains
GB1216081A
(en)
*
1967-06-22
1970-12-16
Nat Res Dev
Electronic logic element
US3555282A
(en)
*
1967-07-31
1971-01-12
Nippon Electric Co
Radiation sensitive switching system employing a semiconductor element
US3621306A
(en)
*
1967-09-29
1971-11-16
Telefunken Patent
Controlled gunn-effect device
GB1212933A
(en)
*
1968-02-22
1970-11-18
Standard Telephones Cables Ltd
Semiconductive circuit arrangement
JPS4813994B1
(en)
*
1968-03-15
1973-05-02
US3579143A
(en)
*
1968-11-29
1971-05-18
North American Rockwell
Method for increasing the efficiency of lsa oscillator devices by uniform illumination
1971
1971-05-14
US
US00143418A
patent/US3766372A/en
not_active
Expired – Lifetime
1971-05-17
NL
NL7106709A
patent/NL7106709A/xx
unknown
1971-05-18
GB
GB1509471*[A
patent/GB1360681A/en
not_active
Expired
1971-05-18
DE
DE19712124635
patent/DE2124635A1/en
active
Pending
Also Published As
Publication number
Publication date
NL7106709A
(en)
1971-11-22
US3766372A
(en)
1973-10-16
DE2124635A1
(en)
1972-01-20
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Legal Events
Date
Code
Title
Description
1974-11-27
PS
Patent sealed [section 19, patents act 1949]
1978-12-20
PCNP
Patent ceased through non-payment of renewal fee
