GB1368139A – Process for making contacts on thin layer circuits
– Google Patents
GB1368139A – Process for making contacts on thin layer circuits
– Google Patents
Process for making contacts on thin layer circuits
Info
Publication number
GB1368139A
GB1368139A
GB4975171A
GB4975171A
GB1368139A
GB 1368139 A
GB1368139 A
GB 1368139A
GB 4975171 A
GB4975171 A
GB 4975171A
GB 4975171 A
GB4975171 A
GB 4975171A
GB 1368139 A
GB1368139 A
GB 1368139A
Authority
GB
United Kingdom
Prior art keywords
layer
contacts
gold
film
tantalum
Prior art date
1970-11-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4975171A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lignes Telegraphiques et Telephoniques LTT SA
Original Assignee
Lignes Telegraphiques et Telephoniques LTT SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1970-11-05
Filing date
1971-10-26
Publication date
1974-09-25
1971-10-26
Application filed by Lignes Telegraphiques et Telephoniques LTT SA
filed
Critical
Lignes Telegraphiques et Telephoniques LTT SA
1974-09-25
Publication of GB1368139A
publication
Critical
patent/GB1368139A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01C—RESISTORS
H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Abstract
1368139 Printed circuits; resistors LIGNES TELEGRAPHIQUES ET TELEPHONIQUES 26 Oct 1971 [5 Nov 1970] 49751/71 Headings H1R and HIS A process for providing localized electric contacts on a tantalum nitride thin film circuit comprises successively depositing a layer a pure tantalum and a layer of the contact forming metal on the circuit film, and subsequently etching the top layer except at the contact locations. A glass substrate 1 is provided with a protective layer 2 of Ta 2 O 5 , a layer 3 of Ta 2 N which provides a resistive film, and a layer 4 of pure Ta, the layers being produced by cathode sputtering of a tantalum target in a vacuum vessel in which there is respectively a partial oxygen pressure for the Ta 2 O 5 layer, a partial nitrogen pressure for the Ta 2 N layer and no active gas for the Ta layer. A final gold layer 5 is also applied by cathode sputtering. Layer 5 is then coated with a layer of photo-resist resin and exposed through a photographic film, and the unwanted resin is washed off to leave a mask 6 over those areas where contacts are required. Layers 5 and, 3 and 4 are subsequently successively etched, for example aqua regia being used to dissolve the gold and a mixture of hydrafluoric and nitric acids to dissolve the Ta and Ta 2 N, a mask 7 being used during the latter operation to protect those areas where resistive patterns are required. The resistance of the resulting circuit may be adjusted by anodic oxidation of the Ta layer. A silicon transistor (Fig. 6, not shown) may be provided and secured by alloying a silicon wafer with one of the gold contacts and a capacitor may be constructed by depositing a dielectric and second electrode on the contact (Fig. 7, not shown).
GB4975171A
1970-11-05
1971-10-26
Process for making contacts on thin layer circuits
Expired
GB1368139A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
FR7039766A
FR2112667A5
(en)
1970-11-05
1970-11-05
Publications (1)
Publication Number
Publication Date
GB1368139A
true
GB1368139A
(en)
1974-09-25
Family
ID=9063772
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4975171A
Expired
GB1368139A
(en)
1970-11-05
1971-10-26
Process for making contacts on thin layer circuits
Country Status (5)
Country
Link
US
(1)
US3793175A
(en)
BE
(1)
BE774345A
(en)
FR
(1)
FR2112667A5
(en)
GB
(1)
GB1368139A
(en)
IT
(1)
IT942744B
(en)
Families Citing this family (7)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2290762A1
(en)
*
1974-11-06
1976-06-04
Lignes Telegraph Telephon
OHMIC CONTACTS PROCESS FOR THIN LAYER CIRCUITS
US4226932A
(en)
*
1979-07-05
1980-10-07
Gte Automatic Electric Laboratories Incorporated
Titanium nitride as one layer of a multi-layered coating intended to be etched
US4336117A
(en)
*
1979-12-07
1982-06-22
The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration
Refractory coatings and method of producing the same
US4591418A
(en)
*
1984-10-26
1986-05-27
The Parker Pen Company
Microlaminated coating
US4774151A
(en)
*
1986-05-23
1988-09-27
International Business Machines Corporation
Low contact electrical resistant composition, substrates coated therewith, and process for preparing such
JP2919306B2
(en)
*
1995-05-31
1999-07-12
日本電気株式会社
Method for manufacturing low-resistance tantalum thin film, low-resistance tantalum wiring and electrode
KR100578976B1
(en)
*
2004-10-15
2006-05-12
삼성에스디아이 주식회사
Multilayer having an excellent adhesion and a methof for fabricating method the same
Family Cites Families (5)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
BE634012A
(en)
*
1961-10-03
US3444015A
(en)
*
1965-03-04
1969-05-13
Sperry Rand Corp
Method of etching tantalum
US3382053A
(en)
*
1965-04-05
1968-05-07
Western Electric Co
Tantalum films of unique structure
US3726733A
(en)
*
1970-02-10
1973-04-10
Fujitsu Ltd
Method of manufacturing thin-film integrated circuits
US3718565A
(en)
*
1970-11-27
1973-02-27
Bell Telephone Labor Inc
Technique for the fabrication of discrete rc structure
1970
1970-11-05
FR
FR7039766A
patent/FR2112667A5/fr
not_active
Expired
1971
1971-10-20
US
US00190906A
patent/US3793175A/en
not_active
Expired – Lifetime
1971-10-22
BE
BE774345A
patent/BE774345A/en
not_active
IP Right Cessation
1971-10-23
IT
IT70487/71A
patent/IT942744B/en
active
1971-10-26
GB
GB4975171A
patent/GB1368139A/en
not_active
Expired
Also Published As
Publication number
Publication date
DE2155056B2
(en)
1977-03-31
IT942744B
(en)
1973-04-02
US3793175A
(en)
1974-02-19
DE2155056A1
(en)
1972-05-10
FR2112667A5
(en)
1972-06-23
BE774345A
(en)
1972-02-14
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(en)
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Legal Events
Date
Code
Title
Description
1975-02-05
PS
Patent sealed [section 19, patents act 1949]
1985-06-26
PCNP
Patent ceased through non-payment of renewal fee
