GB1375461A – – Google Patents
GB1375461A – – Google Patents
Info
Publication number
GB1375461A
GB1375461A
GB2119172A
GB2119172A
GB1375461A
GB 1375461 A
GB1375461 A
GB 1375461A
GB 2119172 A
GB2119172 A
GB 2119172A
GB 2119172 A
GB2119172 A
GB 2119172A
GB 1375461 A
GB1375461 A
GB 1375461A
Authority
GB
United Kingdom
Prior art keywords
diazide
admixed
polymer
naphthoquinone
quinone
Prior art date
1972-05-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2119172A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1972-05-05
Filing date
1972-05-05
Publication date
1974-11-27
1972-05-05
Application filed
filed
Critical
1972-05-05
Priority to GB2119172A
priority
Critical
patent/GB1375461A/en
1973-04-16
Priority to NL7305260.A
priority
patent/NL164140C/en
1973-04-23
Priority to JP4658073A
priority
patent/JPS5629261B2/ja
1973-05-03
Priority to SE7306232A
priority
patent/SE403662B/en
1973-05-03
Priority to FR7315857A
priority
patent/FR2183748B1/fr
1973-05-03
Priority to US357025A
priority
patent/US3869292A/en
1973-05-03
Priority to DE2322230A
priority
patent/DE2322230C2/en
1973-05-04
Priority to IT68257/73A
priority
patent/IT985848B/en
1974-11-27
Publication of GB1375461A
publication
Critical
patent/GB1375461A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
JESXATFQYMPTNL-UHFFFAOYSA-N
2-ethenylphenol
Chemical compound
OC1=CC=CC=C1C=C
JESXATFQYMPTNL-UHFFFAOYSA-N
0.000
abstract
3
UHOVQNZJYSORNB-UHFFFAOYSA-N
Benzene
Chemical compound
C1=CC=CC=C1
UHOVQNZJYSORNB-UHFFFAOYSA-N
0.000
abstract
3
WSFSSNUMVMOOMR-UHFFFAOYSA-N
Formaldehyde
Chemical compound
O=C
WSFSSNUMVMOOMR-UHFFFAOYSA-N
0.000
abstract
3
229920000642
polymer
Polymers
0.000
abstract
3
AZQWKYJCGOJGHM-UHFFFAOYSA-N
1,4-benzoquinone
Chemical compound
O=C1C=CC(=O)C=C1
AZQWKYJCGOJGHM-UHFFFAOYSA-N
0.000
abstract
2
TUAMRELNJMMDMT-UHFFFAOYSA-N
3,5-xylenol
Chemical compound
CC1=CC(C)=CC(O)=C1
TUAMRELNJMMDMT-UHFFFAOYSA-N
0.000
abstract
2
FUGYGGDSWSUORM-UHFFFAOYSA-N
4-hydroxystyrene
Chemical compound
OC1=CC=C(C=C)C=C1
FUGYGGDSWSUORM-UHFFFAOYSA-N
0.000
abstract
2
150000001540
azides
Chemical class
0.000
abstract
2
150000001875
compounds
Chemical class
0.000
abstract
2
WTQZSMDDRMKJRI-UHFFFAOYSA-N
4-diazoniophenolate
Chemical compound
[O-]C1=CC=C([N+]#N)C=C1
WTQZSMDDRMKJRI-UHFFFAOYSA-N
0.000
abstract
1
ZRDSGWXWQNSQAN-UHFFFAOYSA-N
6-diazo-n-phenylcyclohexa-2,4-dien-1-amine
Chemical compound
[N-]=[N+]=C1C=CC=CC1NC1=CC=CC=C1
ZRDSGWXWQNSQAN-UHFFFAOYSA-N
0.000
abstract
1
ISWSIDIOOBJBQZ-UHFFFAOYSA-N
Phenol
Chemical compound
OC1=CC=CC=C1
ISWSIDIOOBJBQZ-UHFFFAOYSA-N
0.000
abstract
1
229920003171
Poly (ethylene oxide)
Polymers
0.000
abstract
1
QAOWNCQODCNURD-UHFFFAOYSA-N
Sulfuric acid
Chemical compound
OS(O)(=O)=O
QAOWNCQODCNURD-UHFFFAOYSA-N
0.000
abstract
1
LEEBETSNAGEFCY-UHFFFAOYSA-N
[N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1
Chemical compound
[N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1
LEEBETSNAGEFCY-UHFFFAOYSA-N
0.000
abstract
1
239000003513
alkali
Substances
0.000
abstract
1
239000007859
condensation product
Substances
0.000
abstract
1
229920001577
copolymer
Polymers
0.000
abstract
1
150000001989
diazonium salts
Chemical class
0.000
abstract
1
IJGRMHOSHXDMSA-UHFFFAOYSA-O
diazynium
Chemical group
[NH+]#N
IJGRMHOSHXDMSA-UHFFFAOYSA-O
0.000
abstract
1
229910052736
halogen
Inorganic materials
0.000
abstract
1
150000002367
halogens
Chemical class
0.000
abstract
1
238000004519
manufacturing process
Methods
0.000
abstract
1
239000000463
material
Substances
0.000
abstract
1
QVEIBLDXZNGPHR-UHFFFAOYSA-N
naphthalene-1,4-dione;diazide
Chemical compound
[N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1
QVEIBLDXZNGPHR-UHFFFAOYSA-N
0.000
abstract
1
229920003986
novolac
Polymers
0.000
abstract
1
239000003960
organic solvent
Substances
0.000
abstract
1
238000000016
photochemical curing
Methods
0.000
abstract
1
FDDDEECHVMSUSB-UHFFFAOYSA-N
sulfanilamide
Chemical compound
NC1=CC=C(S(N)(=O)=O)C=C1
FDDDEECHVMSUSB-UHFFFAOYSA-N
0.000
abstract
1
229940124530
sulfonamide
Drugs
0.000
abstract
1
235000011149
sulphuric acid
Nutrition
0.000
abstract
1
239000001117
sulphuric acid
Substances
0.000
abstract
1
125000000391
vinyl group
Chemical group
[H]C([*])=C([H])[H]
0.000
abstract
1
229920002554
vinyl polymer
Polymers
0.000
abstract
1
Classifications
G—PHYSICS
G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F7/004—Photosensitive materials
G03F7/016—Diazonium salts or compounds
G03F7/021—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders
G03F7/0212—Macromolecular diazonium compounds; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the diazo resins or the polymeric diazonium compounds
G—PHYSICS
G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F7/004—Photosensitive materials
G03F7/008—Azides
G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
G—PHYSICS
G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F7/004—Photosensitive materials
G03F7/022—Quinonediazides
G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
G—PHYSICS
G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
G03F7/004—Photosensitive materials
G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
G03F7/0381—Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin
Abstract
1375461 Photo-curing vinyl/phenol polymers OCE-VAN DER GRINTEN NV 13 April 1973 [5 May 1972] 21191/72 Heading C3P [Also in Division G2] A photosensitive material preferably for the production of printing plates comprises a lightsensitive compound and a homo- or co-polymer of a vinyl phenol. Specified light-sensitive compounds are azides, quinone diazides, diazonium compounds, polymers containing azide, quinone diazide and diazonium groups, and organic halogens admixed with polyethylene oxides. In the examples a condensation product of naphthoquinone-1,2-diazide-5-sulphochloride and 3,5-dimethylphenol, 1-azido-2,5-dimethoxy- 4-(p-tolythio)benzene, an iminoquinonediazide, a benzoquinone diazide sulphonamide or a diazodiphenylamine/formaldehyde condensate is admixed with a polymer of o- or p-vinylphenol, coated on a support, image wise exposed and developed with alkali or a solution containing sulphuric acid and an organic solvent to produce a positive printing plate if a naphthoquinone diazide is used; otherwise a negative plate is produced. The light-senstive layer may also contain a novolak.
GB2119172A
1972-05-05
1972-05-05
Expired
GB1375461A
(en)
Priority Applications (8)
Application Number
Priority Date
Filing Date
Title
GB2119172A
GB1375461A
(en)
1972-05-05
1972-05-05
NL7305260.A
NL164140C
(en)
1972-05-05
1973-04-16
PROCESS FOR THE PREPARATION OF PHOTOSENSITIVE COPIES
JP4658073A
JPS5629261B2
(en)
1972-05-05
1973-04-23
SE7306232A
SE403662B
(en)
1972-05-05
1973-05-03
LIGHT-LIGHTING MATERIAL, SUCH AS PRINTING PLATES, INCLUDING A POLYMER OR CO-POLYMER OF AN ORTHO-, META- OR PARA-VINYLPHENOL
FR7315857A
FR2183748B1
(en)
1972-05-05
1973-05-03
US357025A
US3869292A
(en)
1972-05-05
1973-05-03
Light-sensitive compositions and light-sensitive materials such as printing plates
DE2322230A
DE2322230C2
(en)
1972-05-05
1973-05-03
Photosensitive mixture and its use
IT68257/73A
IT985848B
(en)
1972-05-05
1973-05-04
PHOTOSENSITIVE COMPOSITION PARTS COLARLY FOR PRINTING PLATES
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
GB2119172A
GB1375461A
(en)
1972-05-05
1972-05-05
Publications (1)
Publication Number
Publication Date
GB1375461A
true
GB1375461A
(en)
1974-11-27
Family
ID=10158714
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB2119172A
Expired
GB1375461A
(en)
1972-05-05
1972-05-05
Country Status (8)
Country
Link
US
(1)
US3869292A
(en)
JP
(1)
JPS5629261B2
(en)
DE
(1)
DE2322230C2
(en)
FR
(1)
FR2183748B1
(en)
GB
(1)
GB1375461A
(en)
IT
(1)
IT985848B
(en)
NL
(1)
NL164140C
(en)
SE
(1)
SE403662B
(en)
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2124400A
(en)
*
1982-05-25
1984-02-15
Sumitomo Chemical Co
Positive-type photoresist compositions
GB2126363A
(en)
*
1982-03-15
1984-03-21
Shipley Co
High temperature photoresist
Families Citing this family (95)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
JPS5236043B2
(en)
*
1974-02-21
1977-09-13
JPS5241050B2
(en)
*
1974-03-27
1977-10-15
JPS51120712A
(en)
*
1975-04-15
1976-10-22
Toshiba Corp
Positive type photo-resistant compound
JPS522519A
(en)
*
1975-06-24
1977-01-10
Toshiba Corp
Positive photosensitive composite material
US4009033A
(en)
*
1975-09-22
1977-02-22
International Business Machines Corporation
High speed positive photoresist composition
JPS549619A
(en)
*
1977-06-23
1979-01-24
Oji Paper Co
Photosensitive composition
US4259434A
(en)
*
1977-10-24
1981-03-31
Fuji Photo Film Co., Ltd.
Method for developing positive acting light-sensitive planographic printing plate
JPS5498614A
(en)
*
1978-01-09
1979-08-03
Konishiroku Photo Ind Co Ltd
Photosensitive composition
DE2855393A1
(en)
*
1978-12-21
1980-07-03
Hoechst Ag
METHOD FOR PRODUCING FLAT PRINTING FORMS
GB2052084B
(en)
*
1979-06-13
1983-04-20
Fuji Photo Film Co Ltd
Process for preparing photosensitive lithographic printing plate precursor
JPS5672991A
(en)
*
1979-11-19
1981-06-17
Mita Ind Co Ltd
Color former for coloring substance of leucoline and recording material made by use thereof
JPS56162744A
(en)
*
1980-05-19
1981-12-14
Hitachi Ltd
Formation of fine pattern
JPS5730829A
(en)
*
1980-08-01
1982-02-19
Hitachi Ltd
Micropattern formation method
JPS5852638A
(en)
*
1981-09-24
1983-03-28
Hitachi Ltd
Radiation sensitive composition
JPS5872139A
(en)
*
1981-10-26
1983-04-30
Tokyo Ohka Kogyo Co Ltd
Photosensitive material
US4554237A
(en)
*
1981-12-25
1985-11-19
Hitach, Ltd.
Photosensitive resin composition and method for forming fine patterns with said composition
JPS58203433A
(en)
*
1982-05-21
1983-11-26
Fuji Photo Film Co Ltd
Photosensitive composition
DE3415033C2
(en)
*
1983-04-20
1986-04-03
Hitachi Chemical Co., Ltd.
4′-Azidobenzal-2-methoxyacetophenone, process for its preparation and photosensitive composition containing it
DE3417607A1
(en)
*
1983-05-12
1984-11-15
Hitachi Chemical Co., Ltd.
METHOD FOR PRODUCING FINE PATTERNS
JPS60107644A
(en)
*
1983-09-16
1985-06-13
フイリツプ エイ．ハント ケミカル コ−ポレ−シヨン
Developable water negative resist composition
US4551409A
(en)
*
1983-11-07
1985-11-05
Shipley Company Inc.
Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide
US4631249A
(en)
*
1984-01-16
1986-12-23
Rohm & Haas Company
Process for forming thermally stable negative images on surfaces utilizing polyglutarimide polymer in photoresist composition
US4569897A
(en)
*
1984-01-16
1986-02-11
Rohm And Haas Company
Negative photoresist compositions with polyglutarimide polymer
DE3406927A1
(en)
*
1984-02-25
1985-08-29
Hoechst Ag, 6230 Frankfurt
RADIATION-SENSITIVE MIXTURE BASED ON ACID-CLEARABLE COMPOUNDS
JPS60220931A
(en)
*
1984-03-06
1985-11-05
Tokyo Ohka Kogyo Co Ltd
Base material for photosensitive resin
MX170270B
(en)
*
1984-06-01
1993-08-11
Rohm & Haas
IMAGES ON A SURFACE AND A METHOD FOR FORMING THERMALLY STABLE POSITIVE AND NEGATIVE IMAGES ON A SURFACE
DE3421448A1
(en)
*
1984-06-08
1985-12-12
Hoechst Ag, 6230 Frankfurt
POLYMERS HAVING PERFLUORALKYL GROUPS, REPRODUCTION LAYERS CONTAINING THEM AND THE USE THEREOF FOR WATERLESS OFFSET PRINTING
JPS6161154A
(en)
*
1984-09-03
1986-03-28
Oki Electric Ind Co Ltd
Negative type resist composition and formation of fine resist pattern using said composition
DE3445276A1
(en)
*
1984-12-12
1986-06-19
Hoechst Ag, 6230 Frankfurt
RADIATION-SENSITIVE MIXTURE, LIGHT-SENSITIVE RECORDING MATERIAL MADE THEREOF AND METHOD FOR PRODUCING A FLAT PRINTING FORM
US4600683A
(en)
*
1985-04-22
1986-07-15
International Business Machines Corp.
Cross-linked polyalkenyl phenol based photoresist compositions
JPH0766184B2
(en)
*
1985-06-04
1995-07-19
住友化学工業株式会社
Positive photoresist composition
US5238774A
(en)
*
1985-08-07
1993-08-24
Japan Synthetic Rubber Co., Ltd.
Radiation-sensitive composition containing 1,2-quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent
US5215857A
(en)
*
1985-08-07
1993-06-01
Japan Synthetic Rubber Co., Ltd.
1,2-quinonediazide containing radiation-sensitive resin composition utilizing methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate or methyl 3-methoxypropionate as the solvent
JPS62123444A
(en)
1985-08-07
1987-06-04
Japan Synthetic Rubber Co Ltd
Radiation sensitive resinous composition
EP0212482B1
(en)
*
1985-08-12
1989-04-19
Hoechst Celanese Corporation
Process for obtaining negative images from positive photoresists
US5217840A
(en)
*
1985-08-12
1993-06-08
Hoechst Celanese Corporation
Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US4931381A
(en)
*
1985-08-12
1990-06-05
Hoechst Celanese Corporation
Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
US5256522A
(en)
*
1985-08-12
1993-10-26
Hoechst Celanese Corporation
Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
DE3528930A1
(en)
*
1985-08-13
1987-02-26
Hoechst Ag
POLYMERIC COMPOUNDS AND RADIO-SENSITIVE MIXTURE CONTAINING THEM
DE3528929A1
(en)
*
1985-08-13
1987-02-26
Hoechst Ag
RADIATION-SENSITIVE MIXTURE, THIS CONTAINING RADIATION-SENSITIVE RECORDING MATERIAL AND METHOD FOR THE PRODUCTION OF RELIEF IMAGES
US4758497A
(en)
*
1985-08-22
1988-07-19
Polychrome Corporation
Photosensitive naphthoquinone diazide sulfonyl ester compounds for the fabrication of lithographic plates and photosensitive sheet construction with the compounds
US4692398A
(en)
*
1985-10-28
1987-09-08
American Hoechst Corporation
Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US4983490A
(en)
*
1985-10-28
1991-01-08
Hoechst Celanese Corporation
Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US5039594A
(en)
*
1985-10-28
1991-08-13
Hoechst Celanese Corporation
Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate
US4948697A
(en)
*
1985-10-28
1990-08-14
Hoechst Celanese Corporation
Positive photoresist with a solvent mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US4806458A
(en)
*
1985-10-28
1989-02-21
Hoechst Celanese Corporation
Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate
JPS62102241A
(en)
*
1985-10-30
1987-05-12
Tokyo Ohka Kogyo Co Ltd
Photosensitive composition
US4942108A
(en)
*
1985-12-05
1990-07-17
International Business Machines Corporation
Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
EP0224680B1
(en)
*
1985-12-05
1992-01-15
International Business Machines Corporation
Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
US4980264A
(en)
*
1985-12-17
1990-12-25
International Business Machines Corporation
Photoresist compositions of controlled dissolution rate in alkaline developers
US4822716A
(en)
*
1985-12-27
1989-04-18
Kabushiki Kaisha Toshiba
Polysilanes, Polysiloxanes and silicone resist materials containing these compounds
US4720445A
(en)
*
1986-02-18
1988-01-19
Allied Corporation
Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
JPS62227143A
(en)
*
1986-03-28
1987-10-06
Toshiba Corp
Photosensitive composition
JPH07113773B2
(en)
*
1986-07-04
1995-12-06
株式会社日立製作所
Pattern formation method
US5300380A
(en)
*
1986-08-06
1994-04-05
Ciba-Geigy Corporation
Process for the production of relief structures using a negative photoresist based on polyphenols and epoxy compounds or vinyl ethers
EP0255989B1
(en)
*
1986-08-06
1990-11-22
Ciba-Geigy Ag
Negative photoresist on the basis of polyphenols and epoxide compounds or vinyl ethers
US4788127A
(en)
*
1986-11-17
1988-11-29
Eastman Kodak Company
Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
US5128230A
(en)
*
1986-12-23
1992-07-07
Shipley Company Inc.
Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
JPH07117747B2
(en)
*
1987-04-21
1995-12-18
富士写真フイルム株式会社
Photosensitive composition
JPS63265242A
(en)
*
1987-04-23
1988-11-01
Fuji Photo Film Co Ltd
Malticolor image forming method
JPS6435436A
(en)
*
1987-07-30
1989-02-06
Mitsubishi Chem Ind
Photosensitive planographic printing plate
DE3729035A1
(en)
*
1987-08-31
1989-03-09
Hoechst Ag
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1989-07-20
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1992-09-02
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1992-09-09
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1995-03-04
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1995-12-21
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1996-09-30
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2000-02-25
2004-08-31
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1980-09-11
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GB
GB2119172A
patent/GB1375461A/en
not_active
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1973
1973-04-16
NL
NL7305260.A
patent/NL164140C/en
not_active
IP Right Cessation
1973-04-23
JP
JP4658073A
patent/JPS5629261B2/ja
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US
US357025A
patent/US3869292A/en
not_active
Expired – Lifetime
1973-05-03
FR
FR7315857A
patent/FR2183748B1/fr
not_active
Expired
1973-05-03
DE
DE2322230A
patent/DE2322230C2/en
not_active
Expired
1973-05-03
SE
SE7306232A
patent/SE403662B/en
unknown
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active
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1982-03-15
1984-03-21
Shipley Co
High temperature photoresist
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1982-05-25
1984-02-15
Sumitomo Chemical Co
Positive-type photoresist compositions
Also Published As
Publication number
Publication date
NL164140B
(en)
1980-06-16
FR2183748A1
(en)
1973-12-21
DE2322230A1
(en)
1973-11-22
NL164140C
(en)
1980-11-17
US3869292A
(en)
1975-03-04
NL7305260A
(en)
1973-11-07
JPS5629261B2
(en)
1981-07-07
FR2183748B1
(en)
1977-02-11
SE403662B
(en)
1978-08-28
JPS4948403A
(en)
1974-05-10
DE2322230C2
(en)
1984-01-12
IT985848B
(en)
1974-12-20
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Legal Events
Date
Code
Title
Description
1975-04-09
PS
Patent sealed [section 19, patents act 1949]
1982-09-29
732
Registration of transactions, instruments or events in the register (sect. 32/1977)
1988-12-07
PCNP
Patent ceased through non-payment of renewal fee
