GB1383977A – Semiconductor device
– Google Patents
GB1383977A – Semiconductor device
– Google Patents
Semiconductor device
Info
Publication number
GB1383977A
GB1383977A
GB4795272A
GB4795272A
GB1383977A
GB 1383977 A
GB1383977 A
GB 1383977A
GB 4795272 A
GB4795272 A
GB 4795272A
GB 4795272 A
GB4795272 A
GB 4795272A
GB 1383977 A
GB1383977 A
GB 1383977A
Authority
GB
United Kingdom
Prior art keywords
electrode
region
electrode structure
charge
substrate
Prior art date
1971-11-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4795272A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-11-10
Filing date
1972-10-18
Publication date
1974-02-12
1972-10-18
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1974-02-12
Publication of GB1383977A
publication
Critical
patent/GB1383977A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
abstract
3
239000002800
charge carrier
Substances
0.000
abstract
4
239000000758
substrate
Substances
0.000
abstract
4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound
O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
2
239000000969
carrier
Substances
0.000
abstract
1
229910052681
coesite
Inorganic materials
0.000
abstract
1
229910052906
cristobalite
Inorganic materials
0.000
abstract
1
239000000463
material
Substances
0.000
abstract
1
239000000377
silicon dioxide
Substances
0.000
abstract
1
235000012239
silicon dioxide
Nutrition
0.000
abstract
1
229910052682
stishovite
Inorganic materials
0.000
abstract
1
229910052905
tridymite
Inorganic materials
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
H01L29/42312—Gate electrodes for field effect devices
H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/762—Charge transfer devices
H01L29/765—Charge-coupled devices
H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
H01L29/76866—Surface Channel CCD
Abstract
1383977 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 18 Oct 1972 [10 Nov 1971] 47952/72 Heading H1K In a semi-conductor device, such as a shift register or delay line, utilizing the drift of an injected group 30 of minority-charge carriers through a depletion region 23À1 induced in a substrate 10À1 beneath an electrode structure 20À1, there is provided a graded-impurityconcentration region 17À1 of the same conductivity type as the substrate 10À1. The region 17À1 is graded in such a way that in the presence of the appropriate operating voltages on the substrate electrode 21À1, electrode structure 20À1, injecting electrode 15À1 and detecting electrode 16À1. The boundary of the depletion region 23À1 extends parallel to the device surface. In the Si shift register illustrated the electrode structure 20À1 comprises a plurality of interconnected A1 strips capacitively coupled to the ion implanted region 17À1 through a SiO2 layer 18À1. For P-type material a negative bias on the substrate electrode 21À1 induces the depletion region 23À1, the presence of the grounded strips 20À1 producing shallow potential wells 25 which are rapidly filled with injected charge-carriers. A subsequently injected charge-carrier group 30 will drift along the depletion region 23À1, but will tend to become progressively loss spatially localized due to space charge spreading. The group 30 is periodically reshaped by the application of a positive clock pulse to the electrode structure 20À1. Such a pulse temporarily deepens the potential walls 25, causing the drifting group 30 to be trapped and hence relocalized. Using this techique charge-carrier groups may be directed around carriers and in opposed directions. In a simplified embodiment constituting a delay line the electrode structure 20À1 is replaced by a single continuous electrode (20), Fig. 1 (not shown), overlying the whole length of the graded region (17À1), there being in this case no localized potential walls to reshape an injected pulse.
GB4795272A
1971-11-10
1972-10-18
Semiconductor device
Expired
GB1383977A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US19733971A
1971-11-10
1971-11-10
Publications (1)
Publication Number
Publication Date
GB1383977A
true
GB1383977A
(en)
1974-02-12
Family
ID=22729000
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4795272A
Expired
GB1383977A
(en)
1971-11-10
1972-10-18
Semiconductor device
Country Status (8)
Country
Link
US
(1)
US3796933A
(en)
JP
(1)
JPS5146584B2
(en)
CA
(1)
CA966229A
(en)
DE
(1)
DE2250140C2
(en)
FR
(1)
FR2159280B1
(en)
GB
(1)
GB1383977A
(en)
IT
(1)
IT967897B
(en)
NL
(1)
NL7215003A
(en)
Families Citing this family (8)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL7406728A
(en)
*
1974-05-20
1975-11-24
Philips Nv
SEMI-CONDUCTOR DEVICE FOR DIGITIZING AN ELECTRICAL ANALOGUE SIGNAL.
US4047215A
(en)
*
1975-01-31
1977-09-06
Texas Instruments Incorporated
Uniphase charge coupled devices
GB1551935A
(en)
*
1976-08-19
1979-09-05
Philips Nv
Imaging devices
GB1559312A
(en)
*
1976-08-26
1980-01-16
Philips Nv
Photosensitive device arrangements and systems and photosensitive elements therefor
JPS53158488U
(en)
*
1977-05-14
1978-12-12
US4348690A
(en)
*
1981-04-30
1982-09-07
Rca Corporation
Semiconductor imagers
US4396438A
(en)
*
1981-08-31
1983-08-02
Rca Corporation
Method of making CCD imagers
US4814844A
(en)
*
1986-12-12
1989-03-21
The United States Of America As Represented By The Secretary Of The Air Force
Split two-phase CCD clocking gate apparatus
1971
1971-11-10
US
US00197339A
patent/US3796933A/en
not_active
Expired – Lifetime
1972
1972-09-27
IT
IT29715/72A
patent/IT967897B/en
active
1972-10-13
DE
DE2250140A
patent/DE2250140C2/en
not_active
Expired
1972-10-18
GB
GB4795272A
patent/GB1383977A/en
not_active
Expired
1972-10-25
FR
FR7238483A
patent/FR2159280B1/fr
not_active
Expired
1972-11-07
NL
NL7215003A
patent/NL7215003A/xx
not_active
Application Discontinuation
1972-11-08
CA
CA156033356-16*AA
patent/CA966229A/en
not_active
Expired
1972-11-08
JP
JP47111280A
patent/JPS5146584B2/ja
not_active
Expired
Also Published As
Publication number
Publication date
US3796933A
(en)
1974-03-12
DE2250140A1
(en)
1973-05-17
FR2159280B1
(en)
1974-08-19
NL7215003A
(en)
1973-05-14
CA966229A
(en)
1975-04-15
IT967897B
(en)
1974-03-11
JPS4868178A
(en)
1973-09-17
JPS5146584B2
(en)
1976-12-09
FR2159280A1
(en)
1973-06-22
DE2250140C2
(en)
1983-01-20
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Legal Events
Date
Code
Title
Description
1975-06-25
PS
Patent sealed [section 19, patents act 1949]
1987-06-10
PCNP
Patent ceased through non-payment of renewal fee
