GB1384000A – Electronic switching devices
– Google Patents
GB1384000A – Electronic switching devices
– Google Patents
Electronic switching devices
Info
Publication number
GB1384000A
GB1384000A
GB802572A
GB802572A
GB1384000A
GB 1384000 A
GB1384000 A
GB 1384000A
GB 802572 A
GB802572 A
GB 802572A
GB 802572 A
GB802572 A
GB 802572A
GB 1384000 A
GB1384000 A
GB 1384000A
Authority
GB
United Kingdom
Prior art keywords
pref
sio
pbo
per cent
zno
Prior art date
1971-03-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB802572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INNOTECH CORP
Original Assignee
INNOTECH CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1971-03-09
Filing date
1972-02-22
Publication date
1974-02-12
1972-02-22
Application filed by INNOTECH CORP
filed
Critical
INNOTECH CORP
1974-02-12
Publication of GB1384000A
publication
Critical
patent/GB1384000A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000000203
mixture
Substances
0.000
abstract
9
229910004298
SiO 2
Inorganic materials
0.000
abstract
8
229910018072
Al 2 O 3
Inorganic materials
0.000
abstract
4
QVQLCTNNEUAWMS-UHFFFAOYSA-N
barium oxide
Chemical compound
[Ba]=O
QVQLCTNNEUAWMS-UHFFFAOYSA-N
0.000
abstract
4
IATRAKWUXMZMIY-UHFFFAOYSA-N
strontium oxide
Chemical compound
[O-2].[Sr+2]
IATRAKWUXMZMIY-UHFFFAOYSA-N
0.000
abstract
4
239000011521
glass
Substances
0.000
abstract
3
BRPQOXSCLDDYGP-UHFFFAOYSA-N
calcium oxide
Chemical compound
[O-2].[Ca+2]
BRPQOXSCLDDYGP-UHFFFAOYSA-N
0.000
abstract
2
ODINCKMPIJJUCX-UHFFFAOYSA-N
calcium oxide
Inorganic materials
[Ca]=O
ODINCKMPIJJUCX-UHFFFAOYSA-N
0.000
abstract
2
239000000292
calcium oxide
Substances
0.000
abstract
2
229910004283
SiO 4
Inorganic materials
0.000
abstract
1
229910052751
metal
Inorganic materials
0.000
abstract
1
239000002184
metal
Substances
0.000
abstract
1
238000000034
method
Methods
0.000
abstract
1
238000004062
sedimentation
Methods
0.000
abstract
1
239000004065
semiconductor
Substances
0.000
abstract
1
238000004544
sputter deposition
Methods
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/861—Diodes
H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/92—Capacitors with potential-jump barrier or surface barrier
H01L29/94—Metal-insulator-semiconductors, e.g. MOS
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10B—ELECTRONIC MEMORY DEVICES
H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
H10N70/011—Manufacture or treatment of multistable switching devices
H10N70/021—Formation of the switching material, e.g. layer deposition
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
H10N70/011—Manufacture or treatment of multistable switching devices
H10N70/021—Formation of the switching material, e.g. layer deposition
H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
H10N70/20—Multistable switching devices, e.g. memristors
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
H10N70/801—Constructional details of multistable switching devices
H10N70/821—Device geometry
H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
H—ELECTRICITY
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
H10N70/801—Constructional details of multistable switching devices
H10N70/881—Switching materials
H10N70/883—Oxides or nitrides
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
1384000 Ion-impermeable glass compositions INNOTECH CORP 22 Feb 1972 [9 March 1971] 8025/72 Heading C1M [Also in Division H1] The invention is concerned with glass electronic switching devices (see Division H1), and the Specification discloses the following particular compositions, all of which are said to be electrically insulating and ion impermeable, and may be deposited on metal or semi-conductor surface by one or more of sedimentation, r.f. sputtering or centrifuging techniques. All ratios are mole percentages. (i) SiO 2 3-12 (pref. 6À6); ZnO 45-65 (pref. 55À2); PbO 0-6 (pref. 2À7); B 2 O 3 25-40 (pref. 34À5); Al 2 O 3 0-3 (pref. 1À0) wherein calcium oxide, barium oxide or strontium oxide or a mixture thereof can replace ZnO in an amount up to 10 mole per cent of the total composition. (ii) SiO 2 55-65 (pref. 60); PbO 30-40 (pref. 35); Al 2 O 3 0-7 (pref. 0À7) where B 2 O 3 , V 2 C 5 or P 2 O 5 or a mixture thereof can replace SiO 2 and ZnO can replace PbO, up to 20 mole per cent of the total composition in each case. (iii) SiO 2 35-55 (pref. 43À15); PbO 35-60 (pref. 43À15); Al 2 O 3 0-20 (pref. 7À70) where B 2 O 3 , V 2 O 5 or P 2 O 5 or a mixture thereof can replace SiO 2 and ZnO can replace PbO, up to 20 mole per cent of the total composition in each case. (iv) SiO 2 5-15 (pref. 10); ZnO 50-65 (pref. 55À5); B 2 O 3 25-35 (pref. 34À5) where calcium oxide, barium oxide, strontium oxide or a mixture thereof can replace ZnO up to 10 mole per cent and PbO can replace ZnO up to 20 mole per cent. Other glasses disclosed contain at least 50 mole per cent, and preferably at least 70 mole per cent, of PbSiO 3 , Pb 6 Al 2 Si 6 O 21 , ZnB 2 O 4 or Zn 2 SiO 4 and a further group comprise (a) 1 : 1 mole ratio PbOSiO 2 +#1% B 2 O 3 ; (b) 1 : 1 mole ratio PbO and SiO 2 +a few mole per cent V 2 O 5 ; (c) PbO/Al 2 O 3 /SiO 2 .
GB802572A
1971-03-09
1972-02-22
Electronic switching devices
Expired
GB1384000A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US12230271A
1971-03-09
1971-03-09
Publications (1)
Publication Number
Publication Date
GB1384000A
true
GB1384000A
(en)
1974-02-12
Family
ID=22401906
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB802572A
Expired
GB1384000A
(en)
1971-03-09
1972-02-22
Electronic switching devices
Country Status (7)
Country
Link
US
(1)
US3801878A
(en)
CA
(1)
CA959974A
(en)
FR
(1)
FR2131406A5
(en)
GB
(1)
GB1384000A
(en)
IL
(1)
IL38853A
(en)
IT
(1)
IT952932B
(en)
NL
(1)
NL7202931A
(en)
Families Citing this family (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4024558A
(en)
*
1974-03-27
1977-05-17
Innotech Corporation
Photovoltaic heterojunction device employing a glassy amorphous material as an active layer
US3956042A
(en)
*
1974-11-07
1976-05-11
Xerox Corporation
Selective etchants for thin film devices
NL7604951A
(en)
*
1976-05-10
1977-11-14
Philips Nv
GLASS FOR PASSIVING SEMICONDUCTOR DEVICES.
US6432854B1
(en)
1994-02-07
2002-08-13
Nikon Corporation
Optical glass for polarizing optical system, production process therefor and polarizing beam splitter
US5969861A
(en)
*
1994-02-07
1999-10-19
Nikon Corporation
Polarizing optical system
DE19631171A1
(en)
*
1995-08-02
1997-02-06
Nikon Corp
Optical glass used in optical polarisation system – having specified photoelastic constant in specified wavelength region
Family Cites Families (5)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3247428A
(en)
*
1961-09-29
1966-04-19
Ibm
Coated objects and methods of providing the protective coverings therefor
US3535133A
(en)
*
1968-04-24
1970-10-20
Transitron Electronic Corp
Alkali-free electronic glass and method of manufacture
US3699543A
(en)
*
1968-11-04
1972-10-17
Energy Conversion Devices Inc
Combination film deposited switch unit and integrated circuits
US3564353A
(en)
*
1969-04-16
1971-02-16
Westinghouse Electric Corp
Bulk semiconductor switching device formed from amorphous glass type substance and having symmetrical switching characteristics
US3676756A
(en)
*
1969-09-18
1972-07-11
Innotech Corp
Insulated gate field effect device having glass gate insulator
1971
1971-03-09
US
US00122302A
patent/US3801878A/en
not_active
Expired – Lifetime
1972
1972-02-22
GB
GB802572A
patent/GB1384000A/en
not_active
Expired
1972-02-28
CA
CA135,707A
patent/CA959974A/en
not_active
Expired
1972-02-28
IL
IL38853A
patent/IL38853A/en
unknown
1972-03-06
NL
NL7202931A
patent/NL7202931A/xx
unknown
1972-03-08
FR
FR7208026A
patent/FR2131406A5/fr
not_active
Expired
1972-03-08
IT
IT67731/72A
patent/IT952932B/en
active
Also Published As
Publication number
Publication date
DE2211170A1
(en)
1972-09-14
NL7202931A
(en)
1972-09-12
CA959974A
(en)
1974-12-24
IL38853A0
(en)
1972-04-27
IL38853A
(en)
1974-06-30
IT952932B
(en)
1973-07-30
US3801878A
(en)
1974-04-02
FR2131406A5
(en)
1972-11-10
DE2211170B2
(en)
1976-11-11
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Legal Events
Date
Code
Title
Description
1975-06-25
PS
Patent sealed [section 19, patents act 1949]
1979-10-31
PCNP
Patent ceased through non-payment of renewal fee
