GB1389349A – Integrated attenuation elements
– Google Patents
GB1389349A – Integrated attenuation elements
– Google Patents
Integrated attenuation elements
Info
Publication number
GB1389349A
GB1389349A
GB4866872A
GB4866872A
GB1389349A
GB 1389349 A
GB1389349 A
GB 1389349A
GB 4866872 A
GB4866872 A
GB 4866872A
GB 4866872 A
GB4866872 A
GB 4866872A
GB 1389349 A
GB1389349 A
GB 1389349A
Authority
GB
United Kingdom
Prior art keywords
zone
terminal
input
control
capacitance
Prior art date
1972-01-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4866872A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1972-01-24
Filing date
1972-10-23
Publication date
1975-04-03
1972-10-23
Application filed by Siemens AG
filed
Critical
Siemens AG
1975-04-03
Publication of GB1389349A
publication
Critical
patent/GB1389349A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
abstract
3
230000000903
blocking effect
Effects
0.000
abstract
2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
Boron
Chemical compound
[B]
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
0.000
abstract
1
230000002238
attenuated effect
Effects
0.000
abstract
1
229910052796
boron
Inorganic materials
0.000
abstract
1
239000003795
chemical substances by application
Substances
0.000
abstract
1
239000013642
negative control
Substances
0.000
abstract
1
239000013641
positive control
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
H03H7/24—Frequency- independent attenuators
H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Abstract
1389349 Semiconductor devices SIEMENS AG 23 Oct 1972 [24 Jan 1972] 48668/72 Heading H1K An attenuation circuit comprises a N-type semiconductor body 1 of e.g. P doped Si with P-type Boron doped zones 4, 5, 6 and N-type phosphorus-doped zone 3 on its opposed face with control electrode 13. Zones 4, 5, 6 have electrodes 7, 8, 9 and are aligned in a row (Fig. 1). ). Alternatively a further phosphorus-doped N-type zone is formed adjacent zone 4 with an electrode thereon (Fig. 2, not shown) or such zone may be provided in the vicinity of zone 4 but on the opposed face and separately from the zone 3 and electrode 14 (Fig. 3, not shown). In operation (Fig. 4) a HF input is capacitance coupled to input zone 4 also resistance coupled to a control signal between terminal 44 and earth, while output zone 5 is capacitance to the control signal source. Control zone 6 is resistance capacitance coupled to a further control signal between terminal 47 and earth. Contact electrode 13 on the reverse face is earthed over HF blocking choke 52. Application of control voltage (which may be DC or low frequency AC) positively to earth at 44 biases PN junctions between 4, 5 and 2 into the pass direction to diffuse holes from 4, 5 into region 2 and electrons from 3 into region 2. This lowers the differential resistance between 4, 5 and 3, and if a zero or -ve voltage is applied to terminal 47 the PN junction between zone 6 and region 2 is blocked. The HF signal at 40 then passes across PN junctions 4, 5 to 50 without attenuation. A zero or -ve voltage at terminal 44 blocks PN junctions between 4, 5 and 2 and a positive control voltage at terminal 47 pass biases the PN junction between zone 6’and region 2 to inject holes from zone 6 and electrons from zone 5 into region 2, so as to lower the differential resistance between zones 6 and 3. The HF input at 40 passes to 50 only over the blocking layer capacitance of the PN junction 2, 4 and is shunted to earth over capacitance 49, so that the output signal is highly attenuated to a degree variable by a control signal. Control zone 6 also acts as a capacitance screen between input zone 4 and output zone 5. Zone 15 reduces mis-match between the input of the device and an input line to terminal 40 in response to a negative control voltage applied thereto over terminal 42 to draw off the control current which flows across input zone 4, so that the differential resistance at signal frequency between terminals 10, 17 equals the line surge impedance. A matching resistor may also be connected in series with the connection to zone 15 (Fig. 5, not shown). Plural such attenuation elements in a single semiconductor body may be connected in series, and the passive components may be integrated with the body.
GB4866872A
1972-01-24
1972-10-23
Integrated attenuation elements
Expired
GB1389349A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DE2203247A
DE2203247C3
(en)
1972-01-24
1972-01-24
Semiconductor component with controllable damping and circuit arrangement for its operation
Publications (1)
Publication Number
Publication Date
GB1389349A
true
GB1389349A
(en)
1975-04-03
Family
ID=5833870
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4866872A
Expired
GB1389349A
(en)
1972-01-24
1972-10-23
Integrated attenuation elements
Country Status (10)
Country
Link
US
(1)
US3810049A
(en)
JP
(1)
JPS5646264B2
(en)
CA
(1)
CA971672A
(en)
CH
(1)
CH551717A
(en)
DE
(1)
DE2203247C3
(en)
FR
(1)
FR2169579A5
(en)
GB
(1)
GB1389349A
(en)
IT
(1)
IT971900B
(en)
NL
(1)
NL7216373A
(en)
SE
(2)
SE388739B
(en)
Families Citing this family (5)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL7215200A
(en)
*
1972-11-10
1974-05-14
US3898686A
(en)
*
1974-03-11
1975-08-05
Rca Ltd
Semiconductor radiation detector
US4132996A
(en)
*
1976-11-08
1979-01-02
General Electric Company
Electric field-controlled semiconductor device
JPS62116560U
(en)
*
1986-01-14
1987-07-24
US4739252A
(en)
*
1986-04-24
1988-04-19
International Business Machines Corporation
Current attenuator useful in a very low leakage current measuring device
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3070711A
(en)
*
1958-12-16
1962-12-25
Rca Corp
Shift register
US3432778A
(en)
*
1966-12-23
1969-03-11
Texas Instruments Inc
Solid state microstripline attenuator
US3579059A
(en)
*
1968-03-11
1971-05-18
Nat Semiconductor Corp
Multiple collector lateral transistor device
US3622812A
(en)
*
1968-09-09
1971-11-23
Texas Instruments Inc
Bipolar-to-mos interface stage
1972
1972-01-24
DE
DE2203247A
patent/DE2203247C3/en
not_active
Expired
1972-10-23
GB
GB4866872A
patent/GB1389349A/en
not_active
Expired
1972-11-23
CH
CH1708172A
patent/CH551717A/en
not_active
IP Right Cessation
1972-12-01
NL
NL7216373A
patent/NL7216373A/xx
not_active
Application Discontinuation
1972-12-13
FR
FR7244329A
patent/FR2169579A5/fr
not_active
Expired
1972-12-15
IT
IT32949/72A
patent/IT971900B/en
active
1973
1973-01-04
US
US00321032A
patent/US3810049A/en
not_active
Expired – Lifetime
1973-01-15
CA
CA161,296A
patent/CA971672A/en
not_active
Expired
1973-01-24
JP
JP1018573A
patent/JPS5646264B2/ja
not_active
Expired
1973-01-24
SE
SE7300994A
patent/SE388739B/en
unknown
1975
1975-11-14
SE
SE7512844A
patent/SE403018B/en
unknown
Also Published As
Publication number
Publication date
SE403018B
(en)
1978-07-24
SE388739B
(en)
1976-10-11
NL7216373A
(en)
1973-07-26
DE2203247B2
(en)
1979-06-21
DE2203247A1
(en)
1973-08-02
CA971672A
(en)
1975-07-22
SE7512844L
(en)
1975-11-14
IT971900B
(en)
1974-05-10
FR2169579A5
(en)
1973-09-07
JPS4886486A
(en)
1973-11-15
CH551717A
(en)
1974-07-15
JPS5646264B2
(en)
1981-10-31
US3810049A
(en)
1974-05-07
DE2203247C3
(en)
1980-02-28
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Legal Events
Date
Code
Title
Description
1975-08-13
PS
Patent sealed [section 19, patents act 1949]
1986-07-02
PCNP
Patent ceased through non-payment of renewal fee
