GB1442769A – Method of forming separation zones for defining a light trans mission path in a compound semiconductor optical integrated circuit
– Google Patents
GB1442769A – Method of forming separation zones for defining a light trans mission path in a compound semiconductor optical integrated circuit
– Google Patents
Method of forming separation zones for defining a light trans mission path in a compound semiconductor optical integrated circuit
Info
Publication number
GB1442769A
GB1442769A
GB4625673A
GB4625673A
GB1442769A
GB 1442769 A
GB1442769 A
GB 1442769A
GB 4625673 A
GB4625673 A
GB 4625673A
GB 4625673 A
GB4625673 A
GB 4625673A
GB 1442769 A
GB1442769 A
GB 1442769A
Authority
GB
United Kingdom
Prior art keywords
semiconductor
integrated circuit
compound semiconductor
defining
optical integrated
Prior art date
1972-10-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4625673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Tokyo NUC
Original Assignee
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1972-10-12
Filing date
1973-10-03
Publication date
1976-07-14
1973-10-03
Application filed by University of Tokyo NUC
filed
Critical
University of Tokyo NUC
1976-07-14
Publication of GB1442769A
publication
Critical
patent/GB1442769A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
G—PHYSICS
G02—OPTICS
G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
Abstract
1442769 Optical integrated circuits UNIVERSITY OF TOKYO 3 Oct 1973 [12 Oct 1972] 46256/73 Heading H1K Optical isolation between different parts of an optical semiconductor integrated circuit made of a compound semiconductor is provided by oxide zones formed in a given pattern on the semiconductor surface by plasma oxidation. As described the semiconductor is gallium phosphide or gallium arsenide phosphide (GaAs. 6 P. 4 ). Typically a pattern of isolating zones 3 (Fig. 4a) up to 10 Á thick, is formed extending through an epitaxial layer of GaAs. 6 P. 4 into a GaAs substrate. Light is confined by reflection at the semiconductor-oxide interfaces caused by the fact that the refractive index of the oxide decreases with increasing distance from the interface.
GB4625673A
1972-10-12
1973-10-03
Method of forming separation zones for defining a light trans mission path in a compound semiconductor optical integrated circuit
Expired
GB1442769A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
JP10228072A
JPS4960488A
(en)
1972-10-12
1972-10-12
Publications (1)
Publication Number
Publication Date
GB1442769A
true
GB1442769A
(en)
1976-07-14
Family
ID=14323182
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4625673A
Expired
GB1442769A
(en)
1972-10-12
1973-10-03
Method of forming separation zones for defining a light trans mission path in a compound semiconductor optical integrated circuit
Country Status (3)
Country
Link
JP
(1)
JPS4960488A
(en)
DE
(1)
DE2351215C3
(en)
GB
(1)
GB1442769A
(en)
Families Citing this family (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
JPS60208813A
(en)
*
1984-04-02
1985-10-21
Mitsubishi Electric Corp
Photoelectric converting device and manufacture therefor
1972
1972-10-12
JP
JP10228072A
patent/JPS4960488A/ja
active
Pending
1973
1973-10-03
GB
GB4625673A
patent/GB1442769A/en
not_active
Expired
1973-10-12
DE
DE2351215A
patent/DE2351215C3/en
not_active
Expired
Also Published As
Publication number
Publication date
JPS4960488A
(en)
1974-06-12
DE2351215B2
(en)
1975-12-11
DE2351215C3
(en)
1979-07-19
DE2351215A1
(en)
1974-04-25
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Legal Events
Date
Code
Title
Description
1976-11-24
PS
Patent sealed [section 19, patents act 1949]
1989-05-24
PCNP
Patent ceased through non-payment of renewal fee
