GB1503449A – Semiconductor components
– Google Patents
GB1503449A – Semiconductor components
– Google Patents
Semiconductor components
Info
Publication number
GB1503449A
GB1503449A
GB3159476A
GB3159476A
GB1503449A
GB 1503449 A
GB1503449 A
GB 1503449A
GB 3159476 A
GB3159476 A
GB 3159476A
GB 3159476 A
GB3159476 A
GB 3159476A
GB 1503449 A
GB1503449 A
GB 1503449A
Authority
GB
United Kingdom
Prior art keywords
pad
semiconductor
semiconductor components
contact
heading
Prior art date
1975-08-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3159476A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1975-08-01
Filing date
1976-07-29
Publication date
1978-03-08
1976-07-29
Application filed by Siemens AG
filed
Critical
Siemens AG
1978-03-08
Publication of GB1503449A
publication
Critical
patent/GB1503449A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
abstract
5
239000003795
chemical substances by application
Substances
0.000
abstract
1
239000000758
substrate
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/40—Electrodes ; Multistep manufacturing processes therefor
H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
1503449 Semiconductor devices SIEMENS AG 29 July 1976 [1 Aug 1975] 31594/76 Heading H1K A contact pad 2 for a semiconductor device comprises a plurality of discrete elements 6, 7, 8 one of which, 8, is electrically connected, e.g. via track 3, to the semiconductor zone to which external contact is to be made and comprises a series of spaced elongate portions distributed throughout the pad. When a terminal lead, such as 5, is bonded to the pad 2 only a minor portion of the total area of the pad is thus capacitively coupled through the underlying insulating layer to the semiconductor substrate. Various pad configurations are possible, Fig. 1 showing one example.
GB3159476A
1975-08-01
1976-07-29
Semiconductor components
Expired
GB1503449A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DE19752534477
DE2534477C3
(en)
1975-08-01
1975-08-01
Low-capacitance contact point
Publications (1)
Publication Number
Publication Date
GB1503449A
true
GB1503449A
(en)
1978-03-08
Family
ID=5953032
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB3159476A
Expired
GB1503449A
(en)
1975-08-01
1976-07-29
Semiconductor components
Country Status (5)
Country
Link
AT
(1)
AT359128B
(en)
DE
(1)
DE2534477C3
(en)
FR
(1)
FR2319975A1
(en)
GB
(1)
GB1503449A
(en)
IT
(1)
IT1067180B
(en)
Families Citing this family (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE2631810C3
(en)
*
1976-07-15
1979-03-15
Deutsche Itt Industries Gmbh, 7800 Freiburg
Planar semiconductor device
Family Cites Families (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3450965A
(en)
*
1966-05-28
1969-06-17
Sony Corp
Semiconductor having reinforced lead structure
1975
1975-08-01
DE
DE19752534477
patent/DE2534477C3/en
not_active
Expired
1975-11-03
AT
AT834675A
patent/AT359128B/en
not_active
IP Right Cessation
1976
1976-07-26
FR
FR7622725A
patent/FR2319975A1/en
active
Granted
1976-07-27
IT
IT2572276A
patent/IT1067180B/en
active
1976-07-29
GB
GB3159476A
patent/GB1503449A/en
not_active
Expired
Also Published As
Publication number
Publication date
IT1067180B
(en)
1985-03-12
ATA834675A
(en)
1980-03-15
DE2534477A1
(en)
1977-02-10
AT359128B
(en)
1980-10-27
FR2319975A1
(en)
1977-02-25
DE2534477B2
(en)
1978-07-27
FR2319975B1
(en)
1982-11-19
DE2534477C3
(en)
1979-04-05
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Legal Events
Date
Code
Title
Description
1978-07-19
PS
Patent sealed
1990-03-21
PCNP
Patent ceased through non-payment of renewal fee
