GB1522258A – Production of semiconductor components
– Google Patents
GB1522258A – Production of semiconductor components
– Google Patents
Production of semiconductor components
Info
Publication number
GB1522258A
GB1522258A
GB4935976A
GB4935976A
GB1522258A
GB 1522258 A
GB1522258 A
GB 1522258A
GB 4935976 A
GB4935976 A
GB 4935976A
GB 4935976 A
GB4935976 A
GB 4935976A
GB 1522258 A
GB1522258 A
GB 1522258A
Authority
GB
United Kingdom
Prior art keywords
insulating layer
window
trenches
semiconductor surface
forming
Prior art date
1976-03-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4935976A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1976-03-11
Filing date
1976-11-26
Publication date
1978-08-23
1976-11-26
Application filed by Siemens AG
filed
Critical
Siemens AG
1978-08-23
Publication of GB1522258A
publication
Critical
patent/GB1522258A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
H01L21/76—Making of isolation regions between components
H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
Abstract
1522258 Integrated circuit components SIEMENS AG 26 Nov 1976 [11 March 1976] 49359/76 Heading H1K A method of making an integrated circuit component comprises the steps of forming a frame-shaped window in a first insulating layer 3, the window surrounding a semiconductor surface area in which the component is to be formed, etching trenches (4) in the semiconductor surface exposed by the window such that the trenches extend through a PN junction formed between the semiconductor surface and a substrate 1, forming a second insulating layer 6 having a thickness greater than that of the first insulating layer in the trenches, and thereafter forming the said component in an area defined by the second insulating layer. Typically, the first and second insulating layers are respectively of silicon nitride and silicon dioxide, the latter being 1À5 microns thick. A channel stopper may be implanted or diffused in the trenches prior to the formation of the second insulating layer 6 by oxidation during which phosphorous irnplanted surface zinc (2), Fig. 1 (not shown) below the first insulating layer diffuses further to form n-conductivity type region 20. In the formation of a bipolar transistor, n+ collector contact zinc 7 is diffused through a window in the first insulating layer 3, followed by the ion implantation through the layer 3 in a base region 9. Diodes and resistors may be formed using the method.
GB4935976A
1976-03-11
1976-11-26
Production of semiconductor components
Expired
GB1522258A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DE19762610208
DE2610208C3
(en)
1976-03-11
1976-03-11
Process for the production of semiconductor components
Publications (1)
Publication Number
Publication Date
GB1522258A
true
GB1522258A
(en)
1978-08-23
Family
ID=5972176
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB4935976A
Expired
GB1522258A
(en)
1976-03-11
1976-11-26
Production of semiconductor components
Country Status (5)
Country
Link
JP
(1)
JPS52110576A
(en)
DE
(1)
DE2610208C3
(en)
FR
(1)
FR2344127A1
(en)
GB
(1)
GB1522258A
(en)
IT
(1)
IT1077652B
(en)
Families Citing this family (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB2042801B
(en)
*
1979-02-13
1983-12-14
Standard Telephones Cables Ltd
Contacting semicnductor devices
1976
1976-03-11
DE
DE19762610208
patent/DE2610208C3/en
not_active
Expired
1976-11-26
GB
GB4935976A
patent/GB1522258A/en
not_active
Expired
1977
1977-01-31
FR
FR7702587A
patent/FR2344127A1/en
active
Granted
1977-03-04
IT
IT2091777A
patent/IT1077652B/en
active
1977-03-10
JP
JP2656077A
patent/JPS52110576A/en
active
Pending
Also Published As
Publication number
Publication date
FR2344127B1
(en)
1982-11-12
DE2610208C3
(en)
1979-06-13
FR2344127A1
(en)
1977-10-07
IT1077652B
(en)
1985-05-04
DE2610208A1
(en)
1977-09-15
DE2610208B2
(en)
1978-10-19
JPS52110576A
(en)
1977-09-16
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Legal Events
Date
Code
Title
Description
1978-12-20
PS
Patent sealed
1989-07-19
PCNP
Patent ceased through non-payment of renewal fee
