GB1528372A – Photovoltaic cell
– Google Patents
GB1528372A – Photovoltaic cell
– Google Patents
Photovoltaic cell
Info
Publication number
GB1528372A
GB1528372A
GB38426/75A
GB3842675A
GB1528372A
GB 1528372 A
GB1528372 A
GB 1528372A
GB 38426/75 A
GB38426/75 A
GB 38426/75A
GB 3842675 A
GB3842675 A
GB 3842675A
GB 1528372 A
GB1528372 A
GB 1528372A
Authority
GB
United Kingdom
Prior art keywords
layer
cds
thiourea
sno
sept
Prior art date
1974-09-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB38426/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photon Power Inc
Original Assignee
Photon Power Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1974-09-23
Filing date
1975-09-18
Publication date
1978-10-11
1975-09-18
Application filed by Photon Power Inc
filed
Critical
Photon Power Inc
1978-10-11
Publication of GB1528372A
publication
Critical
patent/GB1528372A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
UMGDCJDMYOKAJW-UHFFFAOYSA-N
thiourea
Chemical compound
NC(N)=S
UMGDCJDMYOKAJW-UHFFFAOYSA-N
0.000
abstract
4
XSQUKJJJFZCRTK-UHFFFAOYSA-N
Urea
Natural products
NC(N)=O
XSQUKJJJFZCRTK-UHFFFAOYSA-N
0.000
abstract
2
150000001875
compounds
Chemical class
0.000
abstract
2
239000000203
mixture
Substances
0.000
abstract
2
-1
CdCl 2 )
Chemical class
0.000
abstract
1
NINIDFKCEFEMDL-UHFFFAOYSA-N
Sulfur
Chemical compound
[S]
NINIDFKCEFEMDL-UHFFFAOYSA-N
0.000
abstract
1
239000005864
Sulphur
Substances
0.000
abstract
1
XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound
[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
abstract
1
229910052782
aluminium
Inorganic materials
0.000
abstract
1
239000004411
aluminium
Substances
0.000
abstract
1
239000011521
glass
Substances
0.000
abstract
1
238000004519
manufacturing process
Methods
0.000
abstract
1
230000000149
penetrating effect
Effects
0.000
abstract
1
150000003839
salts
Chemical class
0.000
abstract
1
238000005507
spraying
Methods
0.000
abstract
1
239000000758
substrate
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
H01L31/0264—Inorganic materials
H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 – H01L31/032
H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 – H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 – H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic System
C—CHEMISTRY; METALLURGY
C03—GLASS; MINERAL OR SLAG WOOL
C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
C03C17/3464—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide
C03C17/347—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide comprising a sulfide or oxysulfide
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/00—Energy generation through renewable energy sources
Y02E10/50—Photovoltaic [PV] energy
Abstract
1528372 Photovoltaic cells PHOTON POWER Inc 18 Sept 1975 [23 Sept 1974] 38426/75 Heading H1K The invention concerns the manufacture of a photovoltaic cell comprising an insulating (e.g. glass) substrate, a conductive layer (e.g. of SnO x ) thereon, a CdS layer on the conductive layer and a further layer, preferably of Cu 2 S, forming a heterojunction with the CdS layer. At least part of the CdS layer is formed by spraying with a composition comprising a Cd salt (e.g. CdCl 2 ), a sulphur-containing compound (e.g. thiourea or NNDM thiourea) and an aluminium-containing compound (e.g. the Al-content of the composition being at least 10% by weight so that the deposited layer includes at least a portion incorporating Al in an amount effective to inhibit the Cu 2 S of the upper layer from penetrating to the SnO x layer. The upper portion of the CdS layer may contain no Al. Processing details are specified.
GB38426/75A
1974-09-23
1975-09-18
Photovoltaic cell
Expired
GB1528372A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US50857074A
1974-09-23
1974-09-23
Publications (1)
Publication Number
Publication Date
GB1528372A
true
GB1528372A
(en)
1978-10-11
Family
ID=24023242
Family Applications (2)
Application Number
Title
Priority Date
Filing Date
GB38426/75A
Expired
GB1528372A
(en)
1974-09-23
1975-09-18
Photovoltaic cell
GB15281/78A
Expired
GB1528373A
(en)
1974-09-23
1975-09-18
Photovoltaic cell
Family Applications After (1)
Application Number
Title
Priority Date
Filing Date
GB15281/78A
Expired
GB1528373A
(en)
1974-09-23
1975-09-18
Photovoltaic cell
Country Status (14)
Country
Link
US
(1)
US4086101A
(en)
AR
(1)
AR225587A1
(en)
BE
(1)
BE833726A
(en)
BR
(1)
BR7506075A
(en)
CH
(1)
CH618046A5
(en)
DE
(1)
DE2542194A1
(en)
DK
(1)
DK423875A
(en)
FR
(1)
FR2285721A2
(en)
GB
(2)
GB1528372A
(en)
IN
(1)
IN155734B
(en)
IT
(1)
IT1047519B
(en)
NL
(1)
NL7511160A
(en)
SE
(1)
SE412224B
(en)
ZA
(2)
ZA762533B
(en)
Families Citing this family (22)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
CH613813A5
(en)
*
1975-11-14
1979-10-15
Photon Power Inc
US4143235A
(en)
*
1977-12-30
1979-03-06
Chevron Research Company
Cadmium sulfide photovoltaic cell and method of fabrication
GB2016802B
(en)
*
1978-03-16
1982-09-08
Chevron Res
Thin film photovoltaic cells
FR2447096A1
(en)
*
1979-01-22
1980-08-14
Chevron Res
Cadmium sulphide photovoltaic cell – has a cadmium sulphide bi:layer, the second layer deposited at a lower temp. than the first
US4234353A
(en)
*
1979-04-09
1980-11-18
Chevron Research Company
Process for preparing photovoltaic cells having increased adhesion of the semi-conducting layer and produced thereby to the conducting layer
US4192721A
(en)
*
1979-04-24
1980-03-11
Baranski Andrzej S
Method for producing a smooth coherent film of a metal chalconide
USRE30504E
(en)
*
1979-08-23
1981-02-03
Photon Power, Inc.
Photovoltaic cell
US4251286A
(en)
*
1979-09-18
1981-02-17
The University Of Delaware
Thin film photovoltaic cells having blocking layers
US4287383A
(en)
*
1979-12-26
1981-09-01
Chevron Research Company
Cadmium sulfide photovoltaic cell of improved efficiency
US4376682A
(en)
*
1980-04-07
1983-03-15
Tdc Technology Development Corporation
Method for producing smooth coherent metal chalconide films
US4366336A
(en)
*
1980-10-16
1982-12-28
Chevron Research Company
Age and heat stabilized photovoltaic cells
EP0054403B1
(en)
*
1980-12-12
1985-09-18
Prutec Limited
Method of manufacturing photo-voltaic devices
USRE31968E
(en)
*
1980-12-31
1985-08-13
The Boeing Company
Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4335266A
(en)
*
1980-12-31
1982-06-15
The Boeing Company
Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4377604A
(en)
*
1981-06-17
1983-03-22
Chevron Research Company
Copper stabilized dipping solution for a photovoltaic device incorporating a Cux S layer
DE3213789A1
(en)
*
1982-04-15
1983-10-20
Battelle-Institut E.V., 6000 Frankfurt
Method of increasing the efficiency of CdSe thin-film solar cells
US5270229A
(en)
*
1989-03-07
1993-12-14
Matsushita Electric Industrial Co., Ltd.
Thin film semiconductor device and process for producing thereof
US5393675A
(en)
*
1993-05-10
1995-02-28
The University Of Toledo
Process for RF sputtering of cadmium telluride photovoltaic cell
WO2006106515A2
(en)
*
2005-04-05
2006-10-12
Alphamirror Inc.
Automatic dimming liquid crystal mirror system
US8334455B2
(en)
*
2008-07-24
2012-12-18
First Solar, Inc.
Photovoltaic devices including Mg-doped semiconductor films
US8383450B2
(en)
2008-09-30
2013-02-26
Stion Corporation
Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
JP2015511329A
(en)
2012-01-31
2015-04-16
アルファマイクロン インコーポレイテッド
Electronic dimmable optical device
Family Cites Families (7)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
NL282696A
(en)
*
1961-08-30
1900-01-01
US3411050A
(en)
*
1966-04-28
1968-11-12
Air Force Usa
Flexible storable solar cell array
US3416956A
(en)
*
1966-05-16
1968-12-17
Kewanee Oil Co
Process for forming a barrier in a cadmium sulfide solar cell
FR2182651B1
(en)
*
1972-05-03
1978-03-03
Telecommunications Sa
US3902920A
(en)
*
1972-11-03
1975-09-02
Baldwin Co D H
Photovoltaic cell
US3959565A
(en)
*
1974-01-08
1976-05-25
D. H. Baldwin Company
Tin oxide coating
US3975211A
(en)
*
1975-03-28
1976-08-17
Westinghouse Electric Corporation
Solar cells and method for making same
1975
1975-09-12
IN
IN1754/CAL/75A
patent/IN155734B/en
unknown
1975-09-12
ZA
ZA762533A
patent/ZA762533B/en
unknown
1975-09-12
ZA
ZA00755836A
patent/ZA755836B/en
unknown
1975-09-18
GB
GB38426/75A
patent/GB1528372A/en
not_active
Expired
1975-09-18
SE
SE7510472A
patent/SE412224B/en
unknown
1975-09-18
GB
GB15281/78A
patent/GB1528373A/en
not_active
Expired
1975-09-19
BR
BR7506075A
patent/BR7506075A/en
unknown
1975-09-19
IT
IT51414/75A
patent/IT1047519B/en
active
1975-09-22
DK
DK423875A
patent/DK423875A/en
not_active
Application Discontinuation
1975-09-22
DE
DE19752542194
patent/DE2542194A1/en
not_active
Ceased
1975-09-22
FR
FR7529015A
patent/FR2285721A2/en
active
Granted
1975-09-22
NL
NL7511160A
patent/NL7511160A/en
not_active
Application Discontinuation
1975-09-23
BE
BE160301A
patent/BE833726A/en
not_active
IP Right Cessation
1975-09-23
CH
CH1234675A
patent/CH618046A5/de
not_active
IP Right Cessation
1975-09-28
AR
AR260492A
patent/AR225587A1/en
active
1975-11-14
US
US05/631,815
patent/US4086101A/en
not_active
Expired – Lifetime
Also Published As
Publication number
Publication date
SE7510472L
(en)
1976-03-24
DE2542194A1
(en)
1976-04-01
AU8474575A
(en)
1977-03-17
US4086101A
(en)
1978-04-25
ZA762533B
(en)
1977-04-27
BR7506075A
(en)
1976-08-31
ZA755836B
(en)
1976-10-27
NL7511160A
(en)
1976-03-25
SE412224B
(en)
1980-02-25
DK423875A
(en)
1976-03-24
IT1047519B
(en)
1980-10-20
AR225587A1
(en)
1982-04-15
FR2285721B2
(en)
1981-09-18
BE833726A
(en)
1976-01-16
GB1528373A
(en)
1978-10-11
IN155734B
(en)
1985-03-02
CH618046A5
(en)
1980-06-30
FR2285721A2
(en)
1976-04-16
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Legal Events
Date
Code
Title
Description
1979-01-31
PS
Patent sealed [section 19, patents act 1949]
1985-05-15
PCNP
Patent ceased through non-payment of renewal fee
