GB1570502A - Creation of Inventions and Patents with Artificial Intelligence

GB1570502A – Microwave transistor oscillators
– Google Patents

GB1570502A – Microwave transistor oscillators
– Google Patents
Microwave transistor oscillators

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Publication number
GB1570502A

GB1570502A
GB47798/76A
GB4779876A
GB1570502A
GB 1570502 A
GB1570502 A
GB 1570502A
GB 47798/76 A
GB47798/76 A
GB 47798/76A
GB 4779876 A
GB4779876 A
GB 4779876A
GB 1570502 A
GB1570502 A
GB 1570502A
Authority
GB
United Kingdom
Prior art keywords
circuit
oscillator
line
line section
transistor
Prior art date
1975-12-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB47798/76A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens AG

Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1975-12-18
Filing date
1976-11-17
Publication date
1980-07-02

1976-11-17
Application filed by Siemens AG
filed
Critical
Siemens AG

1980-07-02
Publication of GB1570502A
publication
Critical
patent/GB1570502A/en

Status
Expired
legal-status
Critical
Current

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Classifications

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS

H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input

H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance

H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator

H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS

H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B

H03B2200/003—Circuit elements of oscillators

H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor

H—ELECTRICITY

H03—ELECTRONIC CIRCUITRY

H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS

H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations

H03B2201/02—Varying the frequency of the oscillations by electronic means

H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode

Description

( 21) Application No 47798/76
( 11) ( 22) Filed 17 Nov 1976 ( 19) ( 31) Convention Application No 2557134 ( 32) Filed 18 Dec 1975 in ( 33) FED REP of Germany (DE) ( 44) Complete Specification Published 2 Jul 1980 ( 51) INT CL 3 H 03 B 5/18 ( 52) Index at Acceptance H 3 T 2 L 2 Q 2 T 2 X 3 H 3 V JAB ( 54) IMPROVEMENTS IN OR RELATING TO MICROWAVE TRANSISTOR OSCILLATORS ( 71) We, SIEMENS AKTIENGESELLSCHAFT, a German Company of Berlin and Munich, German Federal Republic, do hereby declare the invention for which we pray that a patent may be granted to us, and the method by which it is to be performed, to be particularly described in and by the following statement:The invention relates to microwave transistor oscillators in which a Clapp circuit is employed, with a capacitive three-point circuit having one capacitance arranged in series with the tuning inductance.
Of the oscillator circuits customarily used in the microwave technique, the Clapp oscillator offers the best possibilities for wideband frequency tuning, as any tuning inductance variations can most readily be compensated by variations in the reactive impedance of a tuning capacitance The highest oscillating frequency is obtained using the value of the collector-base capacitance and the smallest available tuning inductance The feedback network required to produce oscillations may consist of a capacitive voltage divider formed by a capacitance between the collector and emitter, and another between emitter and base, for which the internal stray capacitances between collector-emitter and emitter-base can be used at higher frequencies The influence of any parasitic reactive components, which usually cannot be avoided in microwave oscillators, impairs the wide band behaviour and may give rise to uncontrolled frequency jumping.
One object of the present invention is to produce construction which substantially eliminates this influence of any parasitic reactive components in such microwave oscillators, and thus to improve upon their wide-band behaviour and also to suppress any possible frequency jumping of the oscillator to frequencies outside the predetermined operating band.
Preferably the construction of the transistor 45 oscillator employs strip line techniques, with few components, and with small test outlay.
The invention consists in a microwave transistor oscillator formed as a Clapp circuit having a frequency determining circuit with a 50 series connection of three capacitors across an inductive element, one of said capacitances being in series with said inductive element to provide a tapping point, and in which a frequency selective attenuation network is 55 interposed in a d c feedback path to the collector of the transistor, whereby any parasitic reactance is prevented from causing any significant impairment of the wide band behaviour of the oscillator and any uncontrol 60 led frequency jumping thereof.
A transistor oscillator of this type is advantageously constructed in the strip line technique, with HF components suppressed by two X/4 lines or in each case a X/4 line 65 shortcircuited via a blocking capacitor.
The invention will now be described with reference to the drawings in which:Figure 1 schematically illustrates the d c.
supply for varactors used in one exemplary 70 embodiment; Figure 2 schematically illustrates the microwave component arrangement for collector d c.
feedback used in an exemplary embodiment; Figures 3 and 4 are explanatory equivalent 75 circuit diagrams of the embodiment shown in Figure 2; Figure 5 schematically illustrates the attenuation network in a collector d c feedback of an exemplary embodiment; and 80 Figure 6 is the overall circuit diagram of the oscillator.
A fundamental component of the construction of a microwave transistor oscillator, which PATENT SPECIFICATION
Lr tn 1 570 502 1 570 502 can be tuned on a wide band is constituted by its HF choke means which, together with the actual high frequency resonant circuit, operate to determine the wide band behaviour of the oscillator Therefore the d c supply for varactors, the collector d c feedback, and the relevant HF choke network will be explained in detail in the following making reference to an exemplary embodiment of a Clapp oscillator circuit constructed in accordance with the invention The supply of direct currents to the microwave part of the circuit need to take place via networks which influence the behaviour of the microwave part of the oscillator as little as possible, or only in specific respects These conditions are fulfilled when, at the microwave part, the impedance of the supply line has wideband characteristics, in the manner of an opencircuit load.
Figure 1 illustrates the d c supply for varactors V 1 and V 2 of an oscillator, using two A/4 line sections 16 and 56, the one terminal of the line section 16 being connected to the point of connection B of the two varactors V 1 and V 2 The point of connection K of the two line sections 16 and 56 is shown and also a free end A of the line section 56.
The connection point K is connected via a resistor Rv and a lead-through filter DF to a voltage supply terminal Uv+ The open-circuit at the point A will, on account of the transformation properties of the line sections 16 and 56, appear at the point B and thus across the varactor v, as an open-circuit load Any d c.
supply current is fed to the short-circuit point K via the resistor Rv The dimensioning of the line sections 16 and S 6 is such that a no-load/noload transformation is fulfilled in the middle frequency region The resistor Rv is incorporated in such manner that it lies as close as possible to the short-circuit point K, to prevent the occurrence of parasitic impedance loops, which stem from line sections whose length is in resonance, and which forms a connection lead to the d c source Impedance loops of a parasitic nature may give rise to frequency jumps within the useful ban during tuning.
Therefore the path of the line from the shortcircuit point K to the lead-through filter DF leads via a resistor, and is as short as possible.
In accordance with the network described here, the d c supplies of the oscillator are constructed to lie between connections to the emitter and the base of the transistor Tr.
Figure 2 shows the collector d c feedback circuit part of the microwave oscillator The collector of the transistor Tr and the anode of the varactor V 1 are each connected to earth for any applied d c voltage by the use of a feedback of the collector current from the transistor Tr and of the inverse current from the varactor V 1 via a A/4 line section 17 which is short-circuited to earth If the associated a c.
equivalent circuit diagram shown in Figure 3 is considered, it will be seen that there is a microwave oscillating circuit for small varactor capacitances whose circuit elements consist of the collector-base capacitance CCB, the baseearth capacitance CCB and an equivalent inductance LE produced by the collector d c 70 feedback and which can be excited at low frequencies to form a resultant transformed load resistance RTL During electronic tuning of the oscillator in the direction of higher frequencies, the value of the capacitance CV is 75 continuously reduced, so that for low frequencies increasingly one obtains the equivalent circuit shown in Figure 4, which in fact contains only the capacitance CBM between the base and earth and the equivalent 80 inductance LE between the collector and earth.
In order to eliminate the danger of any possible frequency jumping of the oscillator, it is provided that the parasitic microwave oscillating circuit is heavily damped This is 85 effected by a frequency-selective active attenuation network such as that shown in Figure 5, provided in the collector d c feedback, and consisting of X/4 line section 17, 57, 18 and an attenuation resistor RD The X 1/4 line 90 section 17 is connected from the collector of the transistor Tr in series with the resistor RD, and the resistor RD lies in parallel with the short-circuited X/4 line section 18 in the jump frequency range The other, no-load line 95 section 57 is led to the point of connection of the first line section 17 to the parallel connection of the resistor RD and the line section 18.
The no-load line section 57 and the parallelconnected, short-circuited line section 18 form 100 a parallel resonance in the region of half the middle frequency, i e the jump frequency band This results in the fact that the resistor RD connected in series with the line section 17 considerably damps the parasitic microwave 105 oscillating circuit (see Figure 5), and therefore prevents possible frequency jumping of the oscillator to operate at frequencies outside of the useful band.
Figure 6 shows the overall circuit diagram of 110 the oscillator, which is characterised by three networks, namely the microwave part with its frequency-determining elements, the HF choke network, and the frequency-selective-active attenuation network in the collector d c 115 feedback of the transistor, each of which has already been explained above The microwave part of the oscillator consists of the microwave transistor Tr, the varactors V 1 and V 2, and the line sections 11, 12 and 13 The 120 associated a c equivalent circuit diagram, which contains the frequency-determining elements, is illustrated in Figure 3, and has already been described in detail above The line section 1 l forms an additional capacitance CBM, con 125 nected by one terminal to the base of the microwave transistor Tr The collector of the microwave transistor Tr is connected to two, series-connected, oppositely poled varactor diodes V 1 and V 2, which are adjoined in the 130 1 570 502 series arm by a line section 12 and in a shunt arm by the line section 13 which forms the oscillating inductance Ls The varactor diodes V 1 and V 2 can be replaced by other capacitive elements The emitter-base circuit includes line sections 15, S 5, RE and DF to a negative supply terminal from the emitter, and a potential divider RI, R 2 to earth, the junction of which divider is connected to the base via line sections 14, 1 and 54.

Claims (3)

WHAT WE CLAIM IS:-

1 A microwave transistor oscillator formed as a Clapp circuit having a frequency determining circuit with a series connection of three capacitances across an inductive element, one of said capacitances being in series with said inductive element to provide a tapping point, and in which a frequency selective attenuation network is interposed in a d c.
feedback path to the collector of the transistor, whereby any parasitic reactance is prevented from causing any significant impairment of the wide-band behaviour of the oscillator and any uncontrolled frequency jumping thereof.

2 A transistor oscillator as claimed in Claim 25 1, in which said attenuation network consists of a series combination of a first X/4 line section with an attenuation resistor, a further short-circuited line section connected in parallel with the attenuation resistor and an open 30 circuit X/4 line section connected to the point of connection of the first line section and the parallel circuit.

3 A transistor oscillator as claimed in Claim 1 or Claim 2, in which said line sections have a 35 construction in the strip line technique HF-chokes being formed by two X/4 line sections or by respective X/4 line sections each having one end short-circuited by a blocking capacitor 40 For the Applicants G.F Redfern & Co, Marlborough Lodge, 14 Farncombe Road, 45 Printed f Ior Her Majesty’s Stationery Office by MULTIPLEX techniques ltd, St Mary Cray, Kent 1980 Published at the Patent Office 25 Southampton Buildings, London WC 2 l AY, from which copies may be obtained.

GB47798/76A
1975-12-18
1976-11-17
Microwave transistor oscillators

Expired

GB1570502A
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

DE2557134A

DE2557134C3
(en)

1975-12-18
1975-12-18

Transistor oscillator for the microwave range

Publications (1)

Publication Number
Publication Date

GB1570502A
true

GB1570502A
(en)

1980-07-02

Family
ID=5964793
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB47798/76A
Expired

GB1570502A
(en)

1975-12-18
1976-11-17
Microwave transistor oscillators

Country Status (17)

Country
Link

US
(1)

US4075580A
(en)

AT
(1)

AT359556B
(en)

AU
(1)

AU507193B2
(en)

BE
(1)

BE849552A
(en)

CA
(1)

CA1083236A
(en)

CH
(1)

CH595720A5
(en)

DE
(1)

DE2557134C3
(en)

DK
(1)

DK561276A
(en)

FR
(1)

FR2335998A1
(en)

GB
(1)

GB1570502A
(en)

IT
(1)

IT1065433B
(en)

LU
(1)

LU75914A1
(en)

NL
(1)

NL7614109A
(en)

PL
(1)

PL108246B1
(en)

SE
(1)

SE413963B
(en)

SU
(1)

SU689634A3
(en)

ZA
(1)

ZA767046B
(en)

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US5157357A
(en)

1991-02-07
1992-10-20
Mitsubishi Denki Kabushiki Kaisha
Monolithic microwave ic oscillator

Families Citing this family (8)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

FR2494929B1
(en)

1980-11-27
1986-04-11
Orega Electro Mecanique

TRANSISTOR MICROWAVE OSCILLATOR, TUNABLE BY TENSION

US4378534A
(en)

1981-03-31
1983-03-29
Motorola, Inc.
Wideband modulation sensitivity compensated voltage controlled oscillator

US4353038A
(en)

1981-03-31
1982-10-05
Motorola, Inc.
Wideband, synthesizer switched element voltage controlled oscillator

US4646360A
(en)

1984-03-07
1987-02-24
Rca Corporation
Constant bandwidth RF filter with improved low frequency attenuation

US4630006A
(en)

1985-05-31
1986-12-16
Anderson Keith V
Current-tuned transistor oscillator

US4684904A
(en)

1986-01-06
1987-08-04
The United States Of America As Represented By The Secretary Of The Air Force
Low phase noise two port voltage controlled oscillator

JP2000151275A
(en)

1998-11-16
2000-05-30
Murata Mfg Co Ltd
Voltage controlled oscillator and electronic equipment using the same

CN114362694B
(en)

2022-03-17
2022-05-17
壹甲子(成都)通讯有限公司
Alternating current small signal driving radio frequency microwave oscillator

Family Cites Families (3)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US3270292A
(en)

1963-11-15
1966-08-30
Rca Corp
Ultra high frequency transistor oscillator

US3649937A
(en)

1970-03-23
1972-03-14
Rca Corp
Electronically tuned ultra high frequency television tuner

US4010428A
(en)

1975-09-15
1977-03-01
Siemens Aktiengesellschaft
Transistor oscillator utilizing clapp circuit configuration for operation in the microwave band

1975

1975-12-18
DE
DE2557134A
patent/DE2557134C3/en
not_active
Expired

1976

1976-09-16
CH
CH1173776A
patent/CH595720A5/xx
not_active
IP Right Cessation

1976-09-30
LU
LU75914A
patent/LU75914A1/xx
unknown

1976-11-15
AT
AT847176A
patent/AT359556B/en
not_active
IP Right Cessation

1976-11-17
GB
GB47798/76A
patent/GB1570502A/en
not_active
Expired

1976-11-17
US
US05/742,665
patent/US4075580A/en
not_active
Expired – Lifetime

1976-11-23
CA
CA266,333A
patent/CA1083236A/en
not_active
Expired

1976-11-24
ZA
ZA767046A
patent/ZA767046B/en
unknown

1976-11-25
AU
AU20008/76A
patent/AU507193B2/en
not_active
Expired

1976-11-29
SU
SU762425695A
patent/SU689634A3/en
active

1976-12-01
SE
SE7613467A
patent/SE413963B/en
unknown

1976-12-01
FR
FR7636204A
patent/FR2335998A1/en
active
Granted

1976-12-14
DK
DK561276A
patent/DK561276A/en
not_active
Application Discontinuation

1976-12-16
IT
IT30464/76A
patent/IT1065433B/en
active

1976-12-17
BE
BE173394A
patent/BE849552A/en
unknown

1976-12-17
NL
NL7614109A
patent/NL7614109A/en
not_active
Application Discontinuation

1976-12-18
PL
PL1976194514A
patent/PL108246B1/en
unknown

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US5157357A
(en)

1991-02-07
1992-10-20
Mitsubishi Denki Kabushiki Kaisha
Monolithic microwave ic oscillator

Also Published As

Publication number
Publication date

DK561276A
(en)

1977-06-19

DE2557134B2
(en)

1979-02-08

US4075580A
(en)

1978-02-21

SE413963B
(en)

1980-06-30

AU507193B2
(en)

1980-02-07

AT359556B
(en)

1980-11-25

FR2335998B1
(en)

1980-05-09

BE849552A
(en)

1977-06-17

FR2335998A1
(en)

1977-07-15

DE2557134C3
(en)

1979-10-04

NL7614109A
(en)

1977-06-21

SE7613467L
(en)

1977-06-19

SU689634A3
(en)

1979-09-30

CA1083236A
(en)

1980-08-05

ATA847176A
(en)

1980-04-15

ZA767046B
(en)

1977-10-26

DE2557134A1
(en)

1977-06-30

LU75914A1
(en)

1978-05-16

AU2000876A
(en)

1978-06-01

IT1065433B
(en)

1985-02-25

CH595720A5
(en)

1978-02-28

PL108246B1
(en)

1980-03-31

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