GB2004414A – Insulated gate field-effect transistor read-only memory array
– Google Patents
GB2004414A – Insulated gate field-effect transistor read-only memory array
– Google Patents
Insulated gate field-effect transistor read-only memory array
Info
Publication number
GB2004414A
GB2004414A
GB7830247A
GB7830247A
GB2004414A
GB 2004414 A
GB2004414 A
GB 2004414A
GB 7830247 A
GB7830247 A
GB 7830247A
GB 7830247 A
GB7830247 A
GB 7830247A
GB 2004414 A
GB2004414 A
GB 2004414A
Authority
GB
United Kingdom
Prior art keywords
effect transistor
memory array
insulated gate
gate field
transistor read
Prior art date
1977-09-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7830247A
Other versions
GB2004414B
(en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1977-09-16
Filing date
1978-07-18
Publication date
1979-03-28
1978-07-18
Application filed by Fairchild Camera and Instrument Corp
filed
Critical
Fairchild Camera and Instrument Corp
1979-03-28
Publication of GB2004414A
publication
Critical
patent/GB2004414A/en
1982-10-20
Application granted
granted
Critical
1982-10-20
Publication of GB2004414B
publication
Critical
patent/GB2004414B/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
230000005669
field effect
Effects
0.000
title
1
Classifications
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C16/00—Erasable programmable read-only memories
G11C16/02—Erasable programmable read-only memories electrically programmable
G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
G—PHYSICS
G11—INFORMATION STORAGE
G11C—STATIC STORES
G11C16/00—Erasable programmable read-only memories
G11C16/02—Erasable programmable read-only memories electrically programmable
G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
G11C16/0491—Virtual ground arrays
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/78—Field effect transistors with field effect produced by an insulated gate
H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
GB7830247A
1977-09-16
1978-07-18
Insulated gate field-effect transistor read-only memory array
Expired
GB2004414B
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US05/834,016
US4173791A
(en)
1977-09-16
1977-09-16
Insulated gate field-effect transistor read-only memory array
Publications (2)
Publication Number
Publication Date
GB2004414A
true
GB2004414A
(en)
1979-03-28
GB2004414B
GB2004414B
(en)
1982-10-20
Family
ID=25265887
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB7830247A
Expired
GB2004414B
(en)
1977-09-16
1978-07-18
Insulated gate field-effect transistor read-only memory array
Country Status (6)
Country
Link
US
(1)
US4173791A
(en)
JP
(1)
JPS5453929A
(en)
CA
(1)
CA1067208A
(en)
DE
(1)
DE2838937A1
(en)
FR
(1)
FR2403623A1
(en)
GB
(1)
GB2004414B
(en)
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2468185A1
(en)
*
1980-10-17
1981-04-30
Intel Corp
Programmable read only memory mfr. – forming two groups of conductive strips, mutually perpendicular and insulated and doped zones for memory cells using mos techniques
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Mitsubishi Electric Corp
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A semiconductor memory device
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Saifun Semiconductors, Ltd.
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1997-06-11
2001-10-02
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Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
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Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
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1997-12-12
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Method for regulating read voltage level at the drain of a cell in a symmetric array
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System and method for one-time programmed memory through direct-tunneling oxide breakdown
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2001-01-18
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US7178004B2
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2003-01-31
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Yan Polansky
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2003-04-29
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Apparatus and methods for multi-level sensing in a memory array
US7123532B2
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Saifun Semiconductors Ltd
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Publication number
Priority date
Publication date
Assignee
Title
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(en)
*
1971-05-24
1973-07-03
Intel Corp
Electrically programmable read only memory array
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(en)
*
1972-05-18
1977-08-23
US3836992A
(en)
*
1973-03-16
1974-09-17
Ibm
Electrically erasable floating gate fet memory cell
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(en)
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1980-09-08
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(en)
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1975-09-08
1977-09-27
Honeywell Inc.
Semiconductor memory cell
GB1569897A
(en)
*
1975-12-31
1980-06-25
Ibm
Field effect transistor
1977
1977-09-16
US
US05/834,016
patent/US4173791A/en
not_active
Expired – Lifetime
1978
1978-07-14
CA
CA307,472A
patent/CA1067208A/en
not_active
Expired
1978-07-18
GB
GB7830247A
patent/GB2004414B/en
not_active
Expired
1978-09-07
DE
DE19782838937
patent/DE2838937A1/en
not_active
Ceased
1978-09-14
JP
JP11244678A
patent/JPS5453929A/en
active
Pending
1978-09-14
FR
FR7826419A
patent/FR2403623A1/en
active
Granted
Cited By (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2468185A1
(en)
*
1980-10-17
1981-04-30
Intel Corp
Programmable read only memory mfr. – forming two groups of conductive strips, mutually perpendicular and insulated and doped zones for memory cells using mos techniques
Also Published As
Publication number
Publication date
FR2403623A1
(en)
1979-04-13
GB2004414B
(en)
1982-10-20
FR2403623B3
(en)
1980-12-26
US4173791A
(en)
1979-11-06
JPS5453929A
(en)
1979-04-27
DE2838937A1
(en)
1979-03-29
CA1067208A
(en)
1979-11-27
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Legal Events
Date
Code
Title
Description
1986-03-26
PCNP
Patent ceased through non-payment of renewal fee
