GB2004415A – Semiconductor device with thermal properties
– Google Patents
GB2004415A – Semiconductor device with thermal properties
– Google Patents
Semiconductor device with thermal properties
Info
Publication number
GB2004415A
GB2004415A
GB7836558A
GB7836558A
GB2004415A
GB 2004415 A
GB2004415 A
GB 2004415A
GB 7836558 A
GB7836558 A
GB 7836558A
GB 7836558 A
GB7836558 A
GB 7836558A
GB 2004415 A
GB2004415 A
GB 2004415A
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
thermal properties
thermal
properties
semiconductor
Prior art date
1977-09-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7836558A
Other versions
GB2004415B
(en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1977-09-14
Filing date
1978-09-12
Publication date
1979-03-28
1978-09-12
Application filed by Raytheon Co
filed
Critical
Raytheon Co
1979-03-28
Publication of GB2004415A
publication
Critical
patent/GB2004415A/en
1982-01-20
Application granted
granted
Critical
1982-01-20
Publication of GB2004415B
publication
Critical
patent/GB2004415B/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 – H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 – H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 – H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 – H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
H01L29/861—Diodes
H01L29/864—Transit-time diodes, e.g. IMPATT, TRAPATT diodes
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, “first-level” interconnects; Manufacturing methods related thereto
H01L2224/10—Bump connectors; Manufacturing methods related thereto
H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01019—Potassium [K]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01078—Platinum [Pt]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/01—Chemical elements
H01L2924/01079—Gold [Au]
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/013—Alloys
H01L2924/0132—Binary Alloys
H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/10—Details of semiconductor or other solid state devices to be connected
H01L2924/11—Device type
H01L2924/12—Passive devices, e.g. 2 terminal devices
H01L2924/1203—Rectifying Diode
H01L2924/12032—Schottky diode
GB7836558A
1977-09-14
1978-09-12
Semiconductor device with thermal properties
Expired
GB2004415B
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US05/833,322
US4160992A
(en)
1977-09-14
1977-09-14
Plural semiconductor devices mounted between plural heat sinks
Publications (2)
Publication Number
Publication Date
GB2004415A
true
GB2004415A
(en)
1979-03-28
GB2004415B
GB2004415B
(en)
1982-01-20
Family
ID=25264091
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB7836558A
Expired
GB2004415B
(en)
1977-09-14
1978-09-12
Semiconductor device with thermal properties
Country Status (7)
Country
Link
US
(1)
US4160992A
(en)
JP
(1)
JPS5453973A
(en)
CA
(1)
CA1095178A
(en)
CH
(1)
CH633655A5
(en)
DE
(1)
DE2839043C2
(en)
GB
(1)
GB2004415B
(en)
NL
(1)
NL186785C
(en)
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2517122A1
(en)
*
1981-11-23
1983-05-27
Raytheon Co
SEMICONDUCTOR DEVICE, IN PARTICULAR MICROWAVE DIODE AND METHOD FOR MANUFACTURING THE SAME
FR2525814A1
(en)
*
1982-04-26
1983-10-28
Raytheon Co
METHOD OF FORMING A PROTECTIVE LAYER IN A SEMICONDUCTOR STRUCTURE
Families Citing this family (9)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4313128A
(en)
*
1979-05-08
1982-01-26
Westinghouse Electric Corp.
Compression bonded electronic device comprising a plurality of discrete semiconductor devices
CS214034B1
(en)
*
1980-06-10
1982-04-09
Michal Pellant
Semiconductor modulus
DE3243307A1
(en)
*
1982-11-23
1984-05-24
Raytheon Co., 02173 Lexington, Mass.
Semiconductor components and process for producing them
DE3315583A1
(en)
*
1983-04-29
1984-10-31
Siemens AG, 1000 Berlin und 8000 München
AN ELECTRICAL COMPONENT-CARRYING, EASILY COOLABLE CIRCUIT MODULE
US4604591A
(en)
*
1983-09-29
1986-08-05
Hazeltine Corporation
Automatically adjustable delay circuit having adjustable diode mesa microstrip delay line
US4711859A
(en)
*
1984-05-24
1987-12-08
Raytheon Company
Method for forming an insulator having a conductive surface
US4604529A
(en)
*
1984-09-28
1986-08-05
Cincinnati Microwave, Inc.
Radar warning receiver with power plug
US5530658A
(en)
*
1994-12-07
1996-06-25
International Business Machines Corporation
System and method for packing heat producing devices in an array to prevent local overheating
FR2793953B1
(en)
*
1999-05-21
2002-08-09
Thomson Csf
THERMAL CAPACITY FOR ELECTRONIC COMPONENT OPERATING IN LONG PULSES
Family Cites Families (22)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
GB941375A
(en)
*
1959-05-11
1963-11-13
Microwaves Associates Inc
A semi-conductor device
US3249891A
(en)
*
1959-08-05
1966-05-03
Ibm
Oscillator apparatus utilizing esaki diode
US3231794A
(en)
*
1961-06-05
1966-01-25
Int Rectifier Corp
Thermal coupling of parallel connected semiconductor elements
US3320497A
(en)
*
1964-09-11
1967-05-16
Control Data Corp
Variable capacitance diode packages
FR1473250A
(en)
*
1966-01-31
1967-03-17
Comp Generale Electricite
Power rectifier device for very high voltage
US3551842A
(en)
*
1968-03-27
1970-12-29
Rca Corp
Semiconductor laser having high power output and reduced threshold
US3740617A
(en)
*
1968-11-20
1973-06-19
Matsushita Electronics Corp
Semiconductor structure and method of manufacturing same
NL6902447A
(en)
*
1969-02-14
1970-08-18
FR2032139A5
(en)
*
1969-02-19
1970-11-20
Comp Generale Electricite
US3649881A
(en)
*
1970-08-31
1972-03-14
Rca Corp
High-power semiconductor device assembly
US3686541A
(en)
*
1971-07-19
1972-08-22
Gen Electric
A flexible resilient member for applying a clamping force to thyristor units
US3728236A
(en)
*
1971-08-05
1973-04-17
Rca Corp
Method of making semiconductor devices mounted on a heat sink
GB1327352A
(en)
*
1971-10-02
1973-08-22
Kyoto Ceramic
Semiconductor device
US3783348A
(en)
*
1972-10-30
1974-01-01
Rca Corp
Encapsulated semiconductor device assembly
DE2324780C3
(en)
*
1973-05-16
1978-07-27
Siemens Ag, 1000 Berlin Und 8000 Muenchen
Method for manufacturing a semiconductor component
US3896473A
(en)
*
1973-12-04
1975-07-22
Bell Telephone Labor Inc
Gallium arsenide schottky barrier avalance diode array
US3932226A
(en)
*
1974-12-06
1976-01-13
Rca Corporation
Method of electrically interconnecting semiconductor elements
US3956820A
(en)
*
1975-02-26
1976-05-18
Rca Corporation
Method of manufacturing a semiconductor device having a lead bonded to a surface thereof
JPS5850428B2
(en)
*
1975-04-16
1983-11-10
株式会社東芝
Mesa semiconductor device
DE2556749A1
(en)
*
1975-12-17
1977-06-23
Bbc Brown Boveri & Cie
POWER SEMICONDUCTOR COMPONENT IN DISC CELL DESIGN
DE2611059A1
(en)
*
1976-03-16
1977-09-29
Siemens Ag
ENCLOSURE SEMI-CONDUCTOR COMPONENT WITH DOUBLE HEAT SINK
US4030943A
(en)
*
1976-05-21
1977-06-21
Hughes Aircraft Company
Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits
1977
1977-09-14
US
US05/833,322
patent/US4160992A/en
not_active
Expired – Lifetime
1978
1978-08-23
CA
CA309,907A
patent/CA1095178A/en
not_active
Expired
1978-09-07
DE
DE2839043A
patent/DE2839043C2/en
not_active
Expired
1978-09-12
GB
GB7836558A
patent/GB2004415B/en
not_active
Expired
1978-09-13
NL
NLAANVRAGE7809334,A
patent/NL186785C/en
not_active
IP Right Cessation
1978-09-13
JP
JP11288878A
patent/JPS5453973A/en
active
Pending
1978-09-14
CH
CH961678A
patent/CH633655A5/en
not_active
IP Right Cessation
Cited By (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2517122A1
(en)
*
1981-11-23
1983-05-27
Raytheon Co
SEMICONDUCTOR DEVICE, IN PARTICULAR MICROWAVE DIODE AND METHOD FOR MANUFACTURING THE SAME
FR2525814A1
(en)
*
1982-04-26
1983-10-28
Raytheon Co
METHOD OF FORMING A PROTECTIVE LAYER IN A SEMICONDUCTOR STRUCTURE
Also Published As
Publication number
Publication date
CA1095178A
(en)
1981-02-03
JPS5453973A
(en)
1979-04-27
NL7809334A
(en)
1979-03-16
CH633655A5
(en)
1982-12-15
NL186785C
(en)
1991-02-18
DE2839043C2
(en)
1986-10-30
US4160992A
(en)
1979-07-10
GB2004415B
(en)
1982-01-20
DE2839043A1
(en)
1979-03-22
NL186785B
(en)
1990-09-17
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Legal Events
Date
Code
Title
Description
1998-10-07
PE20
Patent expired after termination of 20 years
Effective date:
19980911
