GB2014787A - Creation of Inventions and Patents with Artificial Intelligence

GB2014787A – Mesa structure and manufacturing process
– Google Patents

GB2014787A – Mesa structure and manufacturing process
– Google Patents
Mesa structure and manufacturing process

Info

Publication number
GB2014787A

GB2014787A
GB7905545A
GB7905545A
GB2014787A
GB 2014787 A
GB2014787 A
GB 2014787A
GB 7905545 A
GB7905545 A
GB 7905545A
GB 7905545 A
GB7905545 A
GB 7905545A
GB 2014787 A
GB2014787 A
GB 2014787A
Authority
GB
United Kingdom
Prior art keywords
manufacturing process
mesa structure
mesa
manufacturing
Prior art date
1978-02-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Application number
GB7905545A
Other versions

GB2014787B
(en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Vishay Siliconix Inc

Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1978-02-17
Filing date
1979-02-16
Publication date
1979-08-30

1979-02-16
Application filed by Siliconix Inc
filed
Critical
Siliconix Inc

1979-08-30
Publication of GB2014787A
publication
Critical
patent/GB2014787A/en

1982-04-28
Application granted
granted
Critical

1982-04-28
Publication of GB2014787B
publication
Critical
patent/GB2014787B/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

238000004519
manufacturing process
Methods

0.000
title
1

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched

H01L29/76—Unipolar devices, e.g. field effect transistors

H01L29/772—Field effect transistors

H01L29/78—Field effect transistors with field effect produced by an insulated gate

H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region

H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor

H01L29/76—Unipolar devices, e.g. field effect transistors

H01L29/772—Field effect transistors

H01L29/78—Field effect transistors with field effect produced by an insulated gate

H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region

H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/40—Electrodes ; Multistep manufacturing processes therefor

H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions

H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

H01L29/41725—Source or drain electrodes for field effect devices

H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS