GB2020264A

GB2020264A – Process for producing metallic nitride power
– Google Patents

GB2020264A – Process for producing metallic nitride power
– Google Patents
Process for producing metallic nitride power

Info

Publication number
GB2020264A

GB2020264A
GB7911748A
GB7911748A
GB2020264A
GB 2020264 A
GB2020264 A
GB 2020264A
GB 7911748 A
GB7911748 A
GB 7911748A
GB 7911748 A
GB7911748 A
GB 7911748A
GB 2020264 A
GB2020264 A
GB 2020264A
Authority
GB
United Kingdom
Prior art keywords
producing metallic
metallic nitride
nitride power
power
producing
Prior art date
1978-05-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Application number
GB7911748A
Other versions

GB2020264B
(en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Ube Corp

Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1978-05-08
Filing date
1979-04-04
Publication date
1979-11-14

1979-04-04
Application filed by Ube Industries Ltd
filed
Critical
Ube Industries Ltd

1979-11-14
Publication of GB2020264A
publication
Critical
patent/GB2020264A/en

1982-09-08
Application granted
granted
Critical

1982-09-08
Publication of GB2020264B
publication
Critical
patent/GB2020264B/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

Classifications

B—PERFORMING OPERATIONS; TRANSPORTING

B82—NANOTECHNOLOGY

B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium

C01B21/0617—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with vanadium, niobium or tantalum

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/0635—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with germanium, tin or lead

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron

C01B21/0643—Preparation from boron halides

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C

C01B21/00—Nitrogen; Compounds thereof

C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron

C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium

C01B21/0763—Preparation from titanium, zirconium or hafnium halides

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2004/00—Particle morphology

C01P2004/60—Particles characterised by their size

C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2004/00—Particle morphology

C01P2004/60—Particles characterised by their size

C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2004/00—Particle morphology

C01P2004/60—Particles characterised by their size

C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2006/00—Physical properties of inorganic compounds

C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

C—CHEMISTRY; METALLURGY

C01—INORGANIC CHEMISTRY

C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

C01P2006/00—Physical properties of inorganic compounds

C01P2006/80—Compositional purity

GB7911748A
1978-05-08
1979-04-04
Process for producing metallic nitride power

Expired

GB2020264B
(en)

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

JP5371378A

JPS54145400A
(en)

1978-05-08
1978-05-08
Production of metal nitride powder

Publications (2)

Publication Number
Publication Date

GB2020264A
true

GB2020264A
(en)

1979-11-14

GB2020264B

GB2020264B
(en)

1982-09-08

Family
ID=12950464
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB7911748A
Expired

GB2020264B
(en)

1978-05-08
1979-04-04
Process for producing metallic nitride power

Country Status (6)

Country
Link

US
(1)

US4196178A
(en)

JP
(1)

JPS54145400A
(en)

DE
(1)

DE2915023C2
(en)

FR
(1)

FR2425291A1
(en)

GB
(1)

GB2020264B
(en)

SE
(1)

SE438146B
(en)

Cited By (6)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

EP0047143A1
(en)

*

1980-08-29
1982-03-10
Asahi Kasei Kogyo Kabushiki Kaisha
Method for manufacture of silicon nitride

EP0063272A1
(en)

*

1981-04-21
1982-10-27
Asahi Glass Company Ltd.
Synthesis of silicon nitride

EP0225412A1
(en)

*

1985-12-09
1987-06-16
Toa Nenryo Kogyo Kabushiki Kaisha
Production of silicon imides and of silicon nitride thereof

US4800183A
(en)

*

1986-04-09
1989-01-24
The United States Of America As Represented By The United States Department Of Energy
Method for producing refractory nitrides

EP0358975A2
(en)

*

1988-08-31
1990-03-21
Bayer Ag
Silicon nitride powder having a low oxygen content

US5968594A
(en)

*

1996-06-28
1999-10-19
Lam Research Corporation
Direct liquid injection of liquid ammonia solutions in chemical vapor deposition

Families Citing this family (43)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US4321163A
(en)

*

1978-11-21
1982-03-23
Max-Planck-Gesellschaft
Lithium nitride of increased conductivity, method for its preparation, and its use

JPS5595605A
(en)

*

1979-01-10
1980-07-21
Toyo Soda Mfg Co Ltd
High purity silicon nitride and production thereof

JPS589764B2
(en)

*

1980-04-18
1983-02-22
宇部興産株式会社

Manufacturing method of metal carbonitride

JPS593925B2
(en)

*

1980-06-20
1984-01-26
宇部興産株式会社

Manufacturing method of metal carbonitride

US5445776A
(en)

*

1980-10-20
1995-08-29
Kabushiki Kaisha Kobe Seiko Sho
Method for producing high density sintered silicon nitride (Si3 N.sub.4

DE3141590C2
(en)

*

1980-10-20
1985-01-03
Kobe Steel, Ltd., Kobe, Hyogo

Process for the production of high density sintered silicon nitride

US4851206A
(en)

*

1981-07-15
1989-07-25
The Board Of Trustees Of The Leland Stanford Junior University, Stanford University
Methods and compostions involving high specific surface area carbides and nitrides

JPS5815013A
(en)

*

1981-07-21
1983-01-28
Asahi Glass Co Ltd
Synthesizing method for silicon nitride

JPS5888110A
(en)

*

1981-11-17
1983-05-26
Ube Ind Ltd
Preparation of silicon nitride powder

JPS5891018A
(en)

*

1981-11-26
1983-05-30
Denki Kagaku Kogyo Kk
Manufacture of fine nitride powder

JPS5921506A
(en)

*

1982-07-27
1984-02-03
Ube Ind Ltd
Manufacture of crystalline silicon nitride powder

JPS60145903A
(en)

*

1983-12-29
1985-08-01
Toa Nenryo Kogyo Kk
Synthesis of inorganic polysilazane

US4686095A
(en)

*

1985-12-23
1987-08-11
Ford Motor Company
Method of making ultrapure silicon nitride precursor

US4732746A
(en)

*

1986-04-18
1988-03-22
Ford Motor Company
Method of making high purity silicon nitride precursor

US4746501A
(en)

*

1986-12-09
1988-05-24
United States Department Of Energy
Process for preparing transition metal nitrides and transition metal carbonitrides and their reaction intermediates

US5023213A
(en)

*

1986-12-09
1991-06-11
United States Department Of Energy
Precursors in the preparation of transition metal nitrides and transition metal carbonitrides and their reaction intermediates

DE3717284A1
(en)

*

1987-05-22
1988-12-01
Basf Ag

METHOD FOR PRODUCING POWDERED SILICON NITRIDE

DE3720572A1
(en)

*

1987-06-22
1989-01-05
Basf Ag

AMORPHOUS POWDERED SILICON NITRIDE

US4929433A
(en)

*

1987-10-22
1990-05-29
Alfred University
Method for the preparation of sinterable nitrides

US4914063A
(en)

*

1988-04-04
1990-04-03
The United States Of America As Represented By The United States Department Of Energy
Process for producing organic products containing silicon, hydrogen, nitrogen, and carbon by the direct reaction between elemental silicon and organic amines

US4929432A
(en)

*

1988-10-19
1990-05-29
Union Carbide Corporation
Process for producing crystalline silicon nitride powder

JP2659807B2
(en)

*

1989-01-26
1997-09-30
万鎔工業株式会社

Direct smelting method

US5244647A
(en)

*

1990-08-29
1993-09-14
Tanaka Kinkinzoku Kogyo K.K.
Process of preparing hexaamminerhodium trihydroxide, hexaammineplatinum (IV) tetrahydroxide, tetraammineplatinum (II) dihydroxide and tetraamminepalladium dihydroxide

DE4031070A1
(en)

*

1990-10-02
1992-04-09
Bayer Ag

SILICON DIAMIDE, METHOD FOR THE PRODUCTION THEREOF AND SILICONE NITRIDE THEREOF

US5171557A
(en)

*

1991-05-28
1992-12-15
Ford Motor Company
Method for silicon nitride precursor solids recovery

DE4241287A1
(en)

*

1992-12-08
1994-06-09
Bayer Ag

Silicon aluminum nitride ceramic and precursor compounds, process for their preparation and their use

US5618509A
(en)

*

1993-07-09
1997-04-08
Showa Denko K.K.
Method for producing cubic boron nitride

DE19651731B4
(en)

*

1995-12-12
2012-08-16
Ube Industries, Ltd.

Process for the preparation of a nitrogen-containing silane compound

JP2005097022A
(en)

*

2003-09-22
2005-04-14
Japan Science & Technology Agency
Synthetic method for group iiib nitride

KR101746562B1
(en)

*

2009-11-12
2017-06-13
다이헤이요 세멘토 가부시키가이샤
Method for producing alkali metal nitride or alkaline earth metal nitride

JP4585043B1
(en)

*

2009-11-12
2010-11-24
太平洋セメント株式会社

Method for producing metal nitride

JP5627099B2
(en)

*

2010-02-08
2014-11-19
太平洋セメント株式会社

Method for producing alkali metal nitride

JP5651493B2
(en)

*

2010-02-08
2015-01-14
太平洋セメント株式会社

Method for producing various alkaline earth metal nitride composites

JP5627105B2
(en)

*

2010-02-08
2014-11-19
太平洋セメント株式会社

Method for producing alkaline earth metal nitride

JP5567880B2
(en)

*

2010-03-30
2014-08-06
太平洋セメント株式会社

Reaction control method

WO2012053595A1
(en)

*

2010-10-20
2012-04-26
三菱化学株式会社
Method for producing nitride fluophor by using coprecipitated material, nitride fluophor, and material therefor

KR20120061343A
(en)

*

2010-12-03
2012-06-13
삼성엘이디 주식회사
Method for producing phosphor and light emitting device

WO2013003073A1
(en)

2011-06-27
2013-01-03
Sixpoint Materials, Inc.
Ultracapacitors with electrodes containing transition metal nitride

EP2760033A4
(en)

*

2011-09-22
2015-04-01
Toda Kogyo Corp
Method for manufacturing ferromagnetic iron nitride powder, anisotropic magnet, bond magnet, and compressed-powder magnet

CN105236363B
(en)

*

2015-10-12
2018-01-16
陕西阳乐陶瓷材料科技有限公司
A kind of method for preparing the spherical silicon nitride powder of microscale-nanoscale

CN113031398A
(en)

*

2016-03-31
2021-06-25
富士胶片株式会社
Composition, cured film, color filter, light-shielding film, solid-state imaging element, and image display device

CN115246632A
(en)

*

2020-11-02
2022-10-28
刘辉
Method for preparing titanium nitride section bar by utilizing solid titanium tetrachloride and low-temperature liquid ammonia

CN113148966B
(en)

*

2021-04-20
2022-04-29
安徽工业大学
Method for preparing high-purity silicon nitride powder by ammonolysis method

Family Cites Families (5)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

US2207791A
(en)

*

1938-03-18
1940-07-16
Fernelius Willis Conard
Manufacture of sulphur nitride

US3032397A
(en)

*

1957-01-25
1962-05-01
Du Pont
Preparation of metal nitride pigment flakes

US3591338A
(en)

*

1968-06-05
1971-07-06
Du Pont
Preparation of metal nitrides

US3959446A
(en)

*

1974-03-01
1976-05-25
The United States Of America As Represented By The Secretary Of The Air Force
Synthesis of high purity, alpha phase silicon nitride powder

DE2635167C2
(en)

*

1976-08-05
1978-06-01
Rosenthal Ag, 8672 Selb

Process for reducing the gas permeability of porous bodies made of reaction-sintered silicon nitride

1978

1978-05-08
JP
JP5371378A
patent/JPS54145400A/en
active
Granted

1979

1979-04-04
GB
GB7911748A
patent/GB2020264B/en
not_active
Expired

1979-04-05
SE
SE7903031A
patent/SE438146B/en
not_active
IP Right Cessation

1979-04-06
US
US06/027,879
patent/US4196178A/en
not_active
Expired – Lifetime

1979-04-11
FR
FR7909151A
patent/FR2425291A1/en
active
Granted

1979-04-12
DE
DE2915023A
patent/DE2915023C2/en
not_active
Expired

Cited By (8)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

EP0047143A1
(en)

*

1980-08-29
1982-03-10
Asahi Kasei Kogyo Kabushiki Kaisha
Method for manufacture of silicon nitride

EP0063272A1
(en)

*

1981-04-21
1982-10-27
Asahi Glass Company Ltd.
Synthesis of silicon nitride

EP0225412A1
(en)

*

1985-12-09
1987-06-16
Toa Nenryo Kogyo Kabushiki Kaisha
Production of silicon imides and of silicon nitride thereof

US4800183A
(en)

*

1986-04-09
1989-01-24
The United States Of America As Represented By The United States Department Of Energy
Method for producing refractory nitrides

EP0358975A2
(en)

*

1988-08-31
1990-03-21
Bayer Ag
Silicon nitride powder having a low oxygen content

EP0358975A3
(en)

*

1988-08-31
1990-04-04
Bayer Ag
Silicon nitride powder having a low oxygen content

US4983371A
(en)

*

1988-08-31
1991-01-08
Bayer Aktiengesellschaft
Silicon nitride powder of low oxygen content

US5968594A
(en)

*

1996-06-28
1999-10-19
Lam Research Corporation
Direct liquid injection of liquid ammonia solutions in chemical vapor deposition

Also Published As

Publication number
Publication date

SE438146B
(en)

1985-04-01

SE7903031L
(en)

1979-11-09

DE2915023A1
(en)

1979-11-22

DE2915023C2
(en)

1984-11-08

JPS5644006B2
(en)

1981-10-16

FR2425291A1
(en)

1979-12-07

JPS54145400A
(en)

1979-11-13

US4196178A
(en)

1980-04-01

GB2020264B
(en)

1982-09-08

FR2425291B1
(en)

1982-11-26

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Legal Events

Date
Code
Title
Description

1999-04-28
PE20
Patent expired after termination of 20 years

Effective date:
19990403

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