GB2023342A – Passivating composite for a semiconductor device comprising a silicon nitride (si3 n4) layer and phosphosilicate glass (psg) layer 3 and 4 the method off manufacturing the same
– Google Patents
GB2023342A – Passivating composite for a semiconductor device comprising a silicon nitride (si3 n4) layer and phosphosilicate glass (psg) layer 3 and 4 the method off manufacturing the same
– Google Patents
Passivating composite for a semiconductor device comprising a silicon nitride (si3 n4) layer and phosphosilicate glass (psg) layer 3 and 4 the method off manufacturing the same
Info
Publication number
GB2023342A
GB2023342A
GB7919915A
GB7919915A
GB2023342A
GB 2023342 A
GB2023342 A
GB 2023342A
GB 7919915 A
GB7919915 A
GB 7919915A
GB 7919915 A
GB7919915 A
GB 7919915A
GB 2023342 A
GB2023342 A
GB 2023342A
Authority
GB
United Kingdom
Prior art keywords
layer
passivating
psg
composite
manufacturing
Prior art date
1978-06-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7919915A
Other versions
GB2023342B
(en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1978-06-19
Filing date
1979-06-07
Publication date
1979-12-28
1979-06-07
Application filed by RCA Corp
filed
Critical
RCA Corp
1979-12-28
Publication of GB2023342A
publication
Critical
patent/GB2023342A/en
1982-12-22
Application granted
granted
Critical
1982-12-22
Publication of GB2023342B
publication
Critical
patent/GB2023342B/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
229910052581
Si3N4
Inorganic materials
0.000
title
1
239000002131
composite material
Substances
0.000
title
1
238000004519
manufacturing process
Methods
0.000
title
1
238000000034
method
Methods
0.000
title
1
239000005360
phosphosilicate glass
Substances
0.000
title
1
239000004065
semiconductor
Substances
0.000
title
1
HQVNEWCFYHHQES-UHFFFAOYSA-N
silicon nitride
Chemical compound
N12[Si]34N5[Si]62N3[Si]51N64
HQVNEWCFYHHQES-UHFFFAOYSA-N
0.000
title
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02107—Forming insulating materials on a substrate
H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
H01L21/3105—After-treatment
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26
H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 – H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
H01L21/314—Inorganic layers
H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
H01L21/31604—Deposition from a gas or vapour
H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
H01L23/3157—Partial encapsulation or coating
H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
H01L23/3157—Partial encapsulation or coating
H01L23/3192—Multilayer coating
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
H01L23/5329—Insulating materials
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/30—Technical effects
H01L2924/301—Electrical effects
H01L2924/3025—Electromagnetic shielding
GB7919915A
1978-06-19
1979-06-07
Passivating composite for a semiconductor device comprising a silicon nitride (si3 n4) layer and phosphosilicate glass (psg) layer 3 and 4 the method off manufacturing the same
Expired
GB2023342B
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US05/917,106
US4273805A
(en)
1978-06-19
1978-06-19
Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer
Publications (2)
Publication Number
Publication Date
GB2023342A
true
GB2023342A
(en)
1979-12-28
GB2023342B
GB2023342B
(en)
1982-12-22
Family
ID=25438348
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB7919915A
Expired
GB2023342B
(en)
1978-06-19
1979-06-07
Passivating composite for a semiconductor device comprising a silicon nitride (si3 n4) layer and phosphosilicate glass (psg) layer 3 and 4 the method off manufacturing the same
Country Status (12)
Country
Link
US
(1)
US4273805A
(en)
JP
(1)
JPS553700A
(en)
BR
(1)
BR7903787A
(en)
CA
(1)
CA1125439A
(en)
DE
(1)
DE2923737A1
(en)
FR
(1)
FR2429493A1
(en)
GB
(1)
GB2023342B
(en)
IN
(1)
IN149514B
(en)
IT
(1)
IT1121252B
(en)
PL
(1)
PL123900B1
(en)
SE
(1)
SE443260B
(en)
YU
(1)
YU42187B
(en)
Cited By (6)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2451103A1
(en)
*
1979-03-05
1980-10-03
Rca Corp
PROCESS FOR PASSIVATING AN INTEGRATED CIRCUIT, USING A SILICON NITRIDE LAYER (SI3N4) AND A PHOSPHOSILICATE GLASS LAYER (PSG)
EP0060785A2
(en)
*
1981-03-16
1982-09-22
FAIRCHILD CAMERA & INSTRUMENT CORPORATION
Method of inducing flow or densification of phosphosilicate glass for integrated circuits
EP0071010A2
(en)
*
1981-07-27
1983-02-09
International Business Machines Corporation
Method for planarizing an integrated circuit structure
EP0348640A2
(en)
*
1988-05-10
1990-01-03
Kabushiki Kaisha Toshiba
Semiconductor device including a protective film
EP0365854A2
(en)
*
1988-09-27
1990-05-02
Kabushiki Kaisha Toshiba
Semiconductor device having a multi-layered wiring structure
EP0496614A1
(en)
*
1991-01-23
1992-07-29
Nec Corporation
Method for forming contact hole in process of manufacturing semiconductor device
Families Citing this family (28)
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Publication number
Priority date
Publication date
Assignee
Title
US4668973A
(en)
*
1978-06-19
1987-05-26
Rca Corporation
Semiconductor device passivated with phosphosilicate glass over silicon nitride
USRE32351E
(en)
*
1978-06-19
1987-02-17
Rca Corporation
Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
JPS5618469A
(en)
*
1979-07-24
1981-02-21
Fujitsu Ltd
Semiconductor device
JPS56108247A
(en)
*
1980-01-31
1981-08-27
Sanyo Electric Co Ltd
Semiconductor device
JPS56115560A
(en)
*
1980-02-18
1981-09-10
Toshiba Corp
Manufacture of semiconductor device
JPS56116670A
(en)
*
1980-02-20
1981-09-12
Hitachi Ltd
Semiconductor integrated circuit device and manufacture thereof
JPS57113235A
(en)
*
1980-12-29
1982-07-14
Nec Corp
Semiconductor device
JPS57126147A
(en)
*
1981-01-28
1982-08-05
Fujitsu Ltd
Manufacture of semiconductor device
US4349584A
(en)
*
1981-04-28
1982-09-14
Rca Corporation
Process for tapering openings in ternary glass coatings
US4363830A
(en)
*
1981-06-22
1982-12-14
Rca Corporation
Method of forming tapered contact holes for integrated circuit devices
DE3132809A1
(en)
*
1981-08-19
1983-03-10
Siemens AG, 1000 Berlin und 8000 München
METHOD FOR PRODUCING INTEGRATED MOS FIELD EFFECT TRANSISTORS, ESPECIALLY COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUITS WITH AN ADDITIONAL CIRCUIT LEVEL CONSTRUCTED FROM METAL SILICIDES
US4395304A
(en)
*
1982-05-11
1983-07-26
Rca Corporation
Selective etching of phosphosilicate glass
US4420503A
(en)
*
1982-05-17
1983-12-13
Rca Corporation
Low temperature elevated pressure glass flow/re-flow process
JPS58219748A
(en)
*
1982-06-15
1983-12-21
Toshiba Corp
Semiconductor device
US4476621A
(en)
*
1983-02-01
1984-10-16
Gte Communications Products Corporation
Process for making transistors with doped oxide densification
US4544617A
(en)
*
1983-11-02
1985-10-01
Xerox Corporation
Electrophotographic devices containing overcoated amorphous silicon compositions
US4528211A
(en)
*
1983-11-04
1985-07-09
General Motors Corporation
Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
US4575921A
(en)
*
1983-11-04
1986-03-18
General Motors Corporation
Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
FR2555364B1
(en)
*
1983-11-18
1990-02-02
Hitachi Ltd
METHOD FOR MANUFACTURING CONNECTIONS OF A DEVICE WITH INTEGRATED SEMICONDUCTOR CIRCUITS INCLUDING IN PARTICULAR A MITSET
US4515668A
(en)
*
1984-04-25
1985-05-07
Honeywell Inc.
Method of forming a dielectric layer comprising a gettering material
US4606114A
(en)
*
1984-08-29
1986-08-19
Texas Instruments Incorporated
Multilevel oxide as diffusion source
US4613556A
(en)
*
1984-10-18
1986-09-23
Xerox Corporation
Heterogeneous electrophotographic imaging members of amorphous silicon and silicon oxide
JPS6218040A
(en)
*
1985-07-17
1987-01-27
Matsushita Electronics Corp
Flattening of phosphosilicate glass film
US4996576A
(en)
*
1986-11-24
1991-02-26
At&T Bell Laboratories
Radiation-sensitive device
US5142346A
(en)
*
1987-04-03
1992-08-25
Texas Instruments Incorporated
Floating gate JFET image sensor
JPH01123417A
(en)
*
1987-11-07
1989-05-16
Mitsubishi Electric Corp
Manufacture of semiconductor device
US4966870A
(en)
*
1988-04-14
1990-10-30
International Business Machines Corporation
Method for making borderless contacts
US5168340A
(en)
*
1988-08-17
1992-12-01
Texas Instruments Incorporated
Semiconductor integrated circuit device with guardring regions to prevent the formation of an MOS diode
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Assignee
Title
US4089992A
(en)
*
1965-10-11
1978-05-16
International Business Machines Corporation
Method for depositing continuous pinhole free silicon nitride films and products produced thereby
US3961414A
(en)
*
1972-06-09
1976-06-08
International Business Machines Corporation
Semiconductor structure having metallization inlaid in insulating layers and method for making same
US3833919A
(en)
*
1972-10-12
1974-09-03
Ncr
Multilevel conductor structure and method
US3925572A
(en)
*
1972-10-12
1975-12-09
Ncr Co
Multilevel conductor structure and method
JPS51138166A
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*
1975-05-24
1976-11-29
Fujitsu Ltd
Production method of semiconductor device
US4142004A
(en)
*
1976-01-22
1979-02-27
Bell Telephone Laboratories, Incorporated
Method of coating semiconductor substrates
IT1088852B
(en)
*
1976-11-01
1985-06-10
Rca Corp
PASSIVATING STRUCTURE FOR A SIMECONDUCTOR DEVICE
US4097889A
(en)
*
1976-11-01
1978-06-27
Rca Corporation
Combination glass/low temperature deposited Siw Nx Hy O.sub.z
US4091407A
(en)
*
1976-11-01
1978-05-23
Rca Corporation
Combination glass/low temperature deposited Siw Nx Hy O.sub.z
US4063274A
(en)
*
1976-12-10
1977-12-13
Rca Corporation
Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
JPS5492175A
(en)
*
1977-12-29
1979-07-21
Fujitsu Ltd
Manufacture of semiconductor device
1978
1978-06-19
US
US05/917,106
patent/US4273805A/en
not_active
Ceased
1978-12-14
IN
IN1329/CAL/78A
patent/IN149514B/en
unknown
1979
1979-06-04
IT
IT23271/79A
patent/IT1121252B/en
active
1979-06-07
GB
GB7919915A
patent/GB2023342B/en
not_active
Expired
1979-06-08
CA
CA329,345A
patent/CA1125439A/en
not_active
Expired
1979-06-12
DE
DE19792923737
patent/DE2923737A1/en
not_active
Ceased
1979-06-14
SE
SE7905253A
patent/SE443260B/en
unknown
1979-06-15
JP
JP7623979A
patent/JPS553700A/en
active
Pending
1979-06-15
BR
BR7903787A
patent/BR7903787A/en
unknown
1979-06-18
FR
FR7915578A
patent/FR2429493A1/en
active
Granted
1979-06-19
PL
PL1979216429A
patent/PL123900B1/en
unknown
1979-06-19
YU
YU1445/79A
patent/YU42187B/en
unknown
Cited By (10)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR2451103A1
(en)
*
1979-03-05
1980-10-03
Rca Corp
PROCESS FOR PASSIVATING AN INTEGRATED CIRCUIT, USING A SILICON NITRIDE LAYER (SI3N4) AND A PHOSPHOSILICATE GLASS LAYER (PSG)
EP0060785A2
(en)
*
1981-03-16
1982-09-22
FAIRCHILD CAMERA & INSTRUMENT CORPORATION
Method of inducing flow or densification of phosphosilicate glass for integrated circuits
EP0060785A3
(en)
*
1981-03-16
1983-02-16
Fairchild Camera & Instrument Corporation
Method of inducing flow or densification of phosphosilicate glass for integrated circuits
EP0071010A2
(en)
*
1981-07-27
1983-02-09
International Business Machines Corporation
Method for planarizing an integrated circuit structure
EP0071010A3
(en)
*
1981-07-27
1984-11-28
International Business Machines Corporation
Method for planarizing an integrated circuit structure
EP0348640A2
(en)
*
1988-05-10
1990-01-03
Kabushiki Kaisha Toshiba
Semiconductor device including a protective film
EP0348640A3
(en)
*
1988-05-10
1990-06-13
Kabushiki Kaisha Toshiba
Semiconductor device including a protective film
EP0365854A2
(en)
*
1988-09-27
1990-05-02
Kabushiki Kaisha Toshiba
Semiconductor device having a multi-layered wiring structure
EP0365854A3
(en)
*
1988-09-27
1990-12-05
Kabushiki Kaisha Toshiba
Semiconductor device having a multi-layered wiring structure
EP0496614A1
(en)
*
1991-01-23
1992-07-29
Nec Corporation
Method for forming contact hole in process of manufacturing semiconductor device
Also Published As
Publication number
Publication date
FR2429493B1
(en)
1984-07-06
BR7903787A
(en)
1980-02-05
JPS553700A
(en)
1980-01-11
SE7905253L
(en)
1979-12-20
DE2923737A1
(en)
1979-12-20
PL123900B1
(en)
1982-12-31
IT1121252B
(en)
1986-04-02
SE443260B
(en)
1986-02-17
CA1125439A
(en)
1982-06-08
IT7923271D0
(en)
1979-06-04
US4273805A
(en)
1981-06-16
FR2429493A1
(en)
1980-01-18
YU144579A
(en)
1983-02-28
GB2023342B
(en)
1982-12-22
IN149514B
(en)
1982-01-02
YU42187B
(en)
1988-06-30
PL216429A1
(en)
1980-05-05
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