GB2027986A

GB2027986A – Infra-red detectors
– Google Patents

GB2027986A – Infra-red detectors
– Google Patents
Infra-red detectors

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Publication number
GB2027986A

GB2027986A
GB7831750A
GB7831750A
GB2027986A
GB 2027986 A
GB2027986 A
GB 2027986A
GB 7831750 A
GB7831750 A
GB 7831750A
GB 7831750 A
GB7831750 A
GB 7831750A
GB 2027986 A
GB2027986 A
GB 2027986A
Authority
GB
United Kingdom
Prior art keywords
ofthe
infra
layer
mesa
metal
Prior art date
1978-07-31
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Application number
GB7831750A
Other versions

GB2027986B
(en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Philips Electronics UK Ltd

Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1978-07-31
Filing date
1978-07-31
Publication date
1980-02-27

1978-07-31
Application filed by Philips Electronic and Associated Industries Ltd
filed
Critical
Philips Electronic and Associated Industries Ltd

1978-07-31
Priority to GB7831750A
priority
Critical
patent/GB2027986B/en

1979-07-17
Priority to DE7979200396T
priority
patent/DE2967235D1/en

1979-07-17
Priority to EP79200396A
priority
patent/EP0007667B1/en

1979-07-23
Priority to US06/059,831
priority
patent/US4301591A/en

1979-07-26
Priority to CA000332583A
priority
patent/CA1150806A/en

1979-07-31
Priority to JP9689479A
priority
patent/JPS5548981A/en

1980-02-27
Publication of GB2027986A
publication
Critical
patent/GB2027986A/en

1981-11-09
Priority to US06/319,776
priority
patent/US4435462A/en

1983-01-19
Application granted
granted
Critical

1983-01-19
Publication of GB2027986B
publication
Critical
patent/GB2027986B/en

1984-02-20
Priority to JP59028838A
priority
patent/JPS59188178A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

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230000000873
masking effect
Effects

0.000
claims
description
62

238000005530
etching
Methods

0.000
claims
description
57

229910052751
metal
Inorganic materials

0.000
claims
description
46

239000002184
metal
Substances

0.000
claims
description
46

238000010884
ion-beam technique
Methods

0.000
claims
description
39

238000000034
method
Methods

0.000
claims
description
38

239000000463
material
Substances

0.000
claims
description
34

238000004519
manufacturing process
Methods

0.000
claims
description
21

229910000661
Mercury cadmium telluride
Inorganic materials

0.000
claims
description
18

MCMSPRNYOJJPIZ-UHFFFAOYSA-N
cadmium;mercury;tellurium
Chemical compound

[Cd]=[Te]=[Hg]
MCMSPRNYOJJPIZ-UHFFFAOYSA-N
0.000
claims
description
18

229920002120
photoresistant polymer
Polymers

0.000
claims
description
17

238000000151
deposition
Methods

0.000
claims
description
11

VYZAMTAEIAYCRO-UHFFFAOYSA-N
Chromium
Chemical compound

[Cr]
VYZAMTAEIAYCRO-UHFFFAOYSA-N
0.000
claims
description
7

229910052804
chromium
Inorganic materials

0.000
claims
description
7

239000011651
chromium
Substances

0.000
claims
description
7

PCHJSUWPFVWCPO-UHFFFAOYSA-N
gold
Chemical compound

[Au]
PCHJSUWPFVWCPO-UHFFFAOYSA-N
0.000
claims
description
5

229910052737
gold
Inorganic materials

0.000
claims
description
5

239000010931
gold
Substances

0.000
claims
description
5

230000008020
evaporation
Effects

0.000
claims
description
3

238000001704
evaporation
Methods

0.000
claims
description
3

230000008021
deposition
Effects

0.000
claims
description
2

230000003647
oxidation
Effects

0.000
claims
description
2

238000007254
oxidation reaction
Methods

0.000
claims
description
2

239000010410
layer
Substances

0.000
description
86

239000000758
substrate
Substances

0.000
description
28

238000001465
metallisation
Methods

0.000
description
24

238000005498
polishing
Methods

0.000
description
11

150000002500
ions
Chemical class

0.000
description
10

XKRFYHLGVUSROY-UHFFFAOYSA-N
argon
Substances

[Ar]
XKRFYHLGVUSROY-UHFFFAOYSA-N
0.000
description
9

230000008901
benefit
Effects

0.000
description
8

229910052786
argon
Inorganic materials

0.000
description
7

238000005516
engineering process
Methods

0.000
description
7

238000000992
sputter etching
Methods

0.000
description
7

-1
argon ions
Chemical class

0.000
description
6

238000012986
modification
Methods

0.000
description
5

230000004048
modification
Effects

0.000
description
5

238000005215
recombination
Methods

0.000
description
5

230000006798
recombination
Effects

0.000
description
5

239000000126
substance
Substances

0.000
description
5

CSCPPACGZOOCGX-UHFFFAOYSA-N
Acetone
Chemical compound

CC(C)=O
CSCPPACGZOOCGX-UHFFFAOYSA-N
0.000
description
4

229910052594
sapphire
Inorganic materials

0.000
description
4

239000010980
sapphire
Substances

0.000
description
4

239000012790
adhesive layer
Substances

0.000
description
3

238000007743
anodising
Methods

0.000
description
3

239000002800
charge carrier
Substances

0.000
description
3

239000002245
particle
Substances

0.000
description
3

LTPBRCUWZOMYOC-UHFFFAOYSA-N
Beryllium oxide
Chemical compound

O=[Be]
LTPBRCUWZOMYOC-UHFFFAOYSA-N
0.000
description
2

KRHYYFGTRYWZRS-UHFFFAOYSA-N
Fluorane
Chemical compound

F
KRHYYFGTRYWZRS-UHFFFAOYSA-N
0.000
description
2

229910052793
cadmium
Inorganic materials

0.000
description
2

BDOSMKKIYDKNTQ-UHFFFAOYSA-N
cadmium atom
Chemical compound

[Cd]
BDOSMKKIYDKNTQ-UHFFFAOYSA-N
0.000
description
2

238000011161
development
Methods

0.000
description
2

QSHDDOUJBYECFT-UHFFFAOYSA-N
mercury
Chemical compound

[Hg]
QSHDDOUJBYECFT-UHFFFAOYSA-N
0.000
description
2

229910052753
mercury
Inorganic materials

0.000
description
2

238000002161
passivation
Methods

0.000
description
2

238000012545
processing
Methods

0.000
description
2

239000004065
semiconductor
Substances

0.000
description
2

239000007787
solid
Substances

0.000
description
2

229910000497
Amalgam
Inorganic materials

0.000
description
1

238000005299
abrasion
Methods

0.000
description
1

230000001133
acceleration
Effects

0.000
description
1

230000002411
adverse
Effects

0.000
description
1

238000013019
agitation
Methods

0.000
description
1

239000004411
aluminium
Substances

0.000
description
1

229910052782
aluminium
Inorganic materials

0.000
description
1

XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound

[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
description
1

PNEYBMLMFCGWSK-UHFFFAOYSA-N
aluminium oxide
Inorganic materials

[O-2].[O-2].[O-2].[Al+3].[Al+3]
PNEYBMLMFCGWSK-UHFFFAOYSA-N
0.000
description
1

239000010407
anodic oxide
Substances

0.000
description
1

238000003491
array
Methods

0.000
description
1

150000004770
chalcogenides
Chemical class

0.000
description
1

238000003486
chemical etching
Methods

0.000
description
1

RZVXOCDCIIFGGH-UHFFFAOYSA-N
chromium gold
Chemical compound

[Cr].[Au]
RZVXOCDCIIFGGH-UHFFFAOYSA-N
0.000
description
1

239000013078
crystal
Substances

0.000
description
1

230000007812
deficiency
Effects

0.000
description
1

230000000694
effects
Effects

0.000
description
1

239000004744
fabric
Substances

0.000
description
1

238000002513
implantation
Methods

0.000
description
1

WPYVAWXEWQSOGY-UHFFFAOYSA-N
indium antimonide
Chemical compound

[Sb]#[In]
WPYVAWXEWQSOGY-UHFFFAOYSA-N
0.000
description
1

238000011835
investigation
Methods

0.000
description
1

238000010849
ion bombardment
Methods

0.000
description
1

238000001659
ion-beam spectroscopy
Methods

0.000
description
1

LQBJWKCYZGMFEV-UHFFFAOYSA-N
lead tin
Chemical compound

[Sn].[Pb]
LQBJWKCYZGMFEV-UHFFFAOYSA-N
0.000
description
1

XCAUINMIESBTBL-UHFFFAOYSA-N
lead(ii) sulfide
Chemical compound

[Pb]=S
XCAUINMIESBTBL-UHFFFAOYSA-N
0.000
description
1

VCEXCCILEWFFBG-UHFFFAOYSA-N
mercury telluride
Chemical compound

[Hg]=[Te]
VCEXCCILEWFFBG-UHFFFAOYSA-N
0.000
description
1

150000002739
metals
Chemical class

0.000
description
1

230000007935
neutral effect
Effects

0.000
description
1

230000001590
oxidative effect
Effects

0.000
description
1

238000001020
plasma etching
Methods

0.000
description
1

238000007517
polishing process
Methods

0.000
description
1

230000005855
radiation
Effects

0.000
description
1

238000011160
research
Methods

0.000
description
1

238000012552
review
Methods

0.000
description
1

238000000926
separation method
Methods

0.000
description
1

229910052710
silicon
Inorganic materials

0.000
description
1

239000010703
silicon
Substances

0.000
description
1

229910052709
silver
Inorganic materials

0.000
description
1

239000004332
silver
Substances

0.000
description
1

239000002904
solvent
Substances

0.000
description
1

238000004544
sputter deposition
Methods

0.000
description
1

239000007858
starting material
Substances

0.000
description
1

239000013077
target material
Substances

0.000
description
1

238000012546
transfer
Methods

0.000
description
1

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies

H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material

H01L31/0264—Inorganic materials

H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe

H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials

H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428

H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials

H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428

H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching

H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

H01L27/144—Devices controlled by radiation

H01L27/1446—Devices controlled by radiation in a repetitive configuration

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/02—Details

H01L31/0224—Electrodes

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe

H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/00—Stock material or miscellaneous articles

Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]

Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/00—Stock material or miscellaneous articles

Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]

Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Y10T428/24488—Differential nonuniformity at margin

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

Y10T428/00—Stock material or miscellaneous articles

Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]

Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Y10T428/24612—Composite web or sheet

Description

1
GB 2 027 986 A
SPECIFICATION
Detector elements and their manufacture
5 The invention relates to methods of manufacturing infra-red detector elements, particularly but not exclusively of cadmium mercury telluride, and further relates to infra-red detector devices comprising at least one detector element.
10 Both United States Patent Specification 3,977,018 and the Patent Specification of co-pending unpublished United Kingdom Patent Application 30800/75 Serial No. 1559473 (PHB 32508) disclose methods of manufacturing an infra-red detector element includ-15 ing the steps of forming a masking layer on part of a surface of a body of infra-red sensitive material, depositing metal on said masking layer and on a surface part of said body not covered by said masking layer, and removing said masking layer to 20 lift away the metal thereon and leave the metal on said suface part for forming separate electrodes of said detector element. In both these Patent Specifications the masking layer is of photoresist which can be removed by dissolving in a suitable solvent such 25 as acetone.
During operation, the resulting detector elements exhibit a high current density near the facing electrode-extremities defined by the removal of the masking layer. Sometimes these facing extremities 30 of the electrodes are not sharply defined by the metal lift-off process; furthermore in these elements this high current density occurs adjacent part of the body surface between the electrodes, and the free charge-carrier recombination velocity may be high 35 adjacent this surface in spite of passivation.
In both said Patent Specifications the photoresist masking layer is provided on part of a passivating layer formed at the surface of said body, for example by anodising. Before depositing the metal, the 40 masking layer is used as a mask in a process for entirely removing the unmasked parts of the passivating layer so as to expose surface parts of the body for contacting by the electrodes. The process disclosed in the said co-pending United Kingdom 45 Patent Application is a polishing process using a lapping cloth and a fine abrasive; the Applicants have now found, however, that such abrasion can damage the surface of the infra-red sensitive material by introducing recombination centres within the 50 sensitive area of the detector element. The anodic passivating layer is removed in the said United States Patent Specification with a buffered hydrofluoric acid solution; however, the Applicants have found that chemical etchant solutions also etch the ’55 passivating layer under the edge of the masking layer so that the metal electrodes left on removal of the masking layer may not adjoin the remaining passivating layer and may leave an area of unpassi-vated infra-red sensitive material where the high 60 current density occurs in operation of these elements.
All these factors can adversely affect the low frequency (1/f) noise characteristics, and detectivity (D*) of detector element manufactured by these 65 previous methods.
According to a first aspect of the present invention a method of manufacturing an infra-red detector element including the steps of forming a masking layer on part of a surface of a body of infra-red sensitive material, depositing metal on said masking layer and on a surface part of said body not covered by said masking layer, and removing said masking layer to lift away the metal thereon and leave the metal on said surface part for forming separate electrodes of said detector element, is characterised, in that, before depositing said metal, infra-red sensitive material is removed from said surface by ion-beam etching while using said masking layer as an etchant mask so as to form a mesa of infra-red sensitive material topped by said masking layer, and in that metal which is deposited on side-walls of said mesa during the deposition is left for forming said separate electrodes after the removal of said masking layer.
According to a second aspect of the invention there is provided a method of manufacturing an infra-red detector element including the steps of;
(a) forming a masking layer on part of a surface of a body of infra-red sensitive material,
(b) using ion-beam etching to remove said material from said surface while using said masking layer as an etchant mask so as to form a mesa of infra-red sensitive material topped by said masking layer,
(c) depositing metal on said masking layer and . on side-walls of said mesa, and
(d) removing the said masking layerto lift away the metal thereon and leave the metal on the side-walls of said mesaforforming separate electrodes of said detector element.
Ion-beam etching is sometimes called “ion milling” and is a process by which a surface is eroded by bombardment with a beam of high energy particles. This process and ion-beam etching equipment are described in, for example, the following publications the whole contents of which are hereby incorporated by reference into the present Specification:
“High Resolution Fabrication by Ion-Beam Sputtering” by H.L. Garvin, Solid State Technology, November 1973,pages 31 to 36;
“Ion-Beam Etching” by P.G. Gloerson, Journal Vacuum Science Technology, Vol. 12, No. 1, pages 28 to 35;
“An Investigation of Ion Etching” by H. Dimigen et al, Philips Technical Review, Vol. 35, No. 7/8, pages 199 to 208;
“Advances in Ion-Beam Technology” by W. Laz-novsky, Research/Development, August 1975, pages 47 to 55;
“Ion Milling {Ion-Beam Etching) 1954 to 1975 Bibliography” by D.T. Hawkins, Journal Vacuum Science Technology, Vol. 12, No. 6, pages 1389 to 1398;
“Introduction to Ion and Plasma Etching” by S. Somekh, Journal Vacuum Science Technology, Vol. 13, No. 5, pages 1003 to 1007;
“Ion Etching for Pattern Delineation” by C.M. Melliar-Smith, Journal Vacuum Science Technology, Vol. 13, No. 5, pages 1008 to 1022;
“Ion Milling for Semiconductor Production Proces-
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105
110
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2
GB 2 027 986 A
2
ses” by L.D. Bollinger, Solid State Technology, November 1977, pages 66 to 70; and United States Patent Specification 3,860,783 (Schmidt et al), “Ion Etching through a Pattern 5 Mask”.
Rather than being a chemically reactive etching process, the ion-beam etching process involves transfer of energy and momentum from the incident particles to surface atoms of the body being etched. 10 The incident particle beam is formed by acceleration of ions, although some neutralizaton of the ion beam by recombination of a proportion of the ions with electrons may occur before the beam is incident on the surface to be etched. Ejection of the surface 15 atoms occurs when the energy transferred to the atom in the collision process exceeds the chemical binding energy, and the momentum imparted is directed away from the surface. The magnitude of the incident-ion energy must be greater than the 20 chemical binding energy. Ion-Beam energies of a few hundred to several thousand eV are generally used.
The Applicants have found that by using such energies, unmasked surface parts of bodies of 25 infra-red sensitive material such as, for example, cadmium mercury telluride can be readily etched in a reproducible manner over a uniform depth of, for example, at least 0.5 micron to produce well-defined mesas while the effect on the resulting body surface 30 need not significantly increase the low frequency (1/f) noise or reduce the detectivity (D*). The ion-beam etching of the surface part subsequently contacted by the metal electrodes results, however, in a topographically rough surface to which the 35 electrodes can have a strong adhesion, even when the metal is deposited by evaporation. A major advantage is that since the electrodes comprise the metal deposited on the side-walls of said mesa the high currency density which occurred in the pre-40 vious devices adjacent the surface part between the electrode extremities can be reduced, and a significant proportion of the current flow occurring between the electrodes in operation of the element can pass across the bulk of said mesa between its 45 side-walls and not adjacent its top surface where the carrier recombination velocity may be higher. Furthermore the Applicants have found that the ion-beam etching which forms the mesa can also be used to etch unmasked parts of a passivating layer on the 50 body surface without any significant etching of the passivating layer under the edge of the masking layer. Thus a detector element can be readily formed by such a technique so as to have a passivating layer which is present overthetop ofthe mesa and is 55 adjoined at the edge by separate metal electrodes on the side-walls ofthe mesa.
Because of these features detector elements manufactured by such methods in accordance with the invention can have good detectivity D* and small 60 lowfrequency (1/f) noise.
According to a third aspect ofthe present invention an infra-red detector device comprises at least one detector element having a mesa of infra-red sensitive material with separate metal electrodes at 65 least on side-walls of said mesa.
In orderto illustrate the realisation of these and other aspects and features in accordance with the invention and their advantages, embodiments ofthe invention will now be described, by way of example, 70 with reference to the accompanying diagrammatic drawings, in which:
Figure 1 is a cross-sectional view of a wafer of cadmium mercury telluride mounted on a polishing block at an early stage in the manufacture of an 75 infra-red detector element by a method in accordance with both the first and second aspects ofthe invention;
Figure 2 is a cross-sectional view ofthe wafer mounted on another polishing block at a subsequent 80 step in the method;
Figure 3 is a cross-sectional view ofthe wafer after thinning on said other polishing block;
Figure 4 is a cross-sectional view of the thinned wafer on said other polishing block at a subsequent 85 ion-beam etching step for forming strip portions *. from the wafer;
Figure 5 is a plan view of the thinned wafer on said other polishing block after the ion-beam etching step, the cross-section of Figure 4 being taken along 90 the line IV-IV of Figure 5;
Figure 6 is a cross-sectional view taken along the same line as Figure 4 after a thinning and rounding step;
Figure 7 is a cross-sectional view of parts of three 95 of the strip portions of the wafer after a subsequent, anodising treatment;
Figure 8 is a cross-sectional view along the line VIII-VIII of Figure 5 illustrating the division of a strip portion ofthe wafer into separate bodies during a 100 further ion-beam etching step.
Figure 9 is a plan view of one such body mounted on a detector substrate in a subsequent stepforthe manufacture;
Figure 10 is a plan view ofthe arrangement of 105 Figure 9 after providing a first masking layer;
Figure 11 is a cross-sectional view taken on the lineXI-XI of Figure 10 afterforming a mesa at the body surface by ion-beam etching;
Figure 12 is a cross-sectional view ofthe arrange-110 ment shown in Figure 11 after a metal deposition step;
Figure 13 is a plan view ofthe arrangement of Figure 12 after removal of the first masking layer;
Figure 14 is a plan view ofthe arrangement of 115 Figure 13 after providing a second masking layerfor determining the desired pattern of detector elements and their electrodes;
Figure 15 is a cross-sectional view ofthe arrangement of Figure 14 during an ion-beam etching step 120 to form said desired pattern; *
Figure 16 is a plan view ofthe resulting detector element array which is in accordance with the third aspect of the invention;
Figure 77 is a cross-sectional view taken on the 125 line XVII-XVII of Figure 16;
Figure 18 is a modification of Figure 16 showing in plan view a detector element array in accordance with the third aspect ofthe invention and manufactured by a slightly different method also in accord-130 ance with both the first and second aspects ofthe
GB 2 027 986 A
invention;
Figure 19 is a cross-sectional view taken on the line XIX-XIX of Figure 18;
Figure 20 is a modification of Figure 10 and 5 Figure21 is a modification of Figure 14both showing in plan view a body of cadmium mercury telluride on a detector substrate at different steps in the manufacture of a different detector element array by a method in accordance with both the first 10 and second aspects ofthe invention, and
Figure 22is a cross-sectional view of a detector element array in accordance with the third aspect of the invention and manufactured by the method, steps of which are illustrated in Figures 20 and 21. 15 It should be noted that the Figures in the accompanying drawings are not drawn to scale; the relative dimensions and proportions of some parts ofthe Figures have been greatly exaggerated or reduced forthe sake of clarity. In particularthe 20 thickness ofthe various layers in relation to their lateral extent is much smaller than may otherwise be apparent from the drawings. The same reference numerals as used in one Figure are generally used to refer to the same or similar parts in other Figures 25 and embodiments.
In the method now to be described with reference to Figures 1 to 17, the starting material is a crystal wafer 1 of cadmium mercury telluride, Cdi_xHgxTe where 0< x <1. The material is sensitive to infra-red 30 radiaton, and the atomic ratio of cadmium to mercury may be such as to produce a cut-off wavelength forthe material of for example approximately 12 microns. The dimensions of the starting wafer are not critical but should be sufficient to 35 provide the large number of detector elements to be manufactured therefrom, for example over a thousand elements; the wafer may be circular with a diameter of for example 10 m.m; its thickness may be for example 0.5 m.m. 40 The wafer 1 is mounted on a polishing block 2, for example by a layer of wax 3. The thickness ofthe wafer 1 projecting above shoulders of the block 2 is then lapped away and its exposed major surface is polished in known manner. The resulting wafer 45 thickness may now be for example 200 microns. Preferably the final polishing stage involves a chemical etching treatment to remove surface damage. The polished surface and the side of the wafer 1 are now provided with a passivating layer 4, for example 50 by anodic oxidation in known manner. The resulting arrangement is illustrated in Figure 1. The wafer 1 is now removed from the block 2 and adhered via its anodized major surface to another polishing block 5, for example with a layer of wax 7. 55 Although the passivating layer 4 is shown in Figures 1 and 2, it is omitted in subsequent Figures forthe sake of convenience. The thickness of the wafer 1 projecting above shoulders ofthe block 5 is then lapped away and its exposed major surface is 60 polished in known manner. The resulting wafer thickness may now be for example 15 microns. The resulting arrangement is illustrated in Figure 3. A layer of photoresist is then provided on the thinned wafer 1 and is selectively exposed and 65 developed to provide a photoresist masking layer 10. The pattern of the layer 10 corresponds to the pattern of interconnected strip portions 9 illustrated in Figure 5. The photoresist may be for example that commercially available under the trade name Ship-70 ley resist AZ1350H of Shipley Chemicals Limited. An etching treatment is then effected using the layer 10 as an etchant mask so as to form a plurality of slots 8 through the thickness of the wafer 1. As shown in Figures 4 and 5 the slots 8 define substantially 75 parallel strip portions 9 of the wafer which are interconnected by an orthogonal strip 11 extending across a diameter of the wafer. As illustrated in Figure 4, this etching treatment may be performed by a beam 12 of, for example, 80 argon ions. Such etching is effected in a vacuum chamber with the wafer and block arrangement 1,5 mounted on a target holder; thetarget holder may be for example water-cooled and rotatable during the etching treatment. The pressure in the chamber 85 is kept sufficiently low that scattering of the ions is minimal and the surface to be etched is bombarded by the ions at a predetermined angle. The incident ion-beam is obtainedfrom an ion source which may be mounted, for example, at the top ofthe chamber. 90 The Applicants have used a chamber with a saddle-field ion source commercially available from lontech Limited of Teddington, U.K. Using this ion source, the etching area at a target distance of 5 cm. is found to be 2 sq.cm., and the argon ion current can be up to 95 45 micro Amps plus an approximately equivalent dose of neutral argon atoms using a voltage of 5kV with a source current of 1 mA and an argon pressure of 5 x 10"4 torr. The etch rate depends on the beam current, the 100 incident angle ofthe beam, the energy ofthe beam and the nature of the target material. The incident angle can be varied by tilting thetarget holder. For use at different stages of this method of manufacture,,the target holder may be at a distance of, for 105 example, 4 cm. from the ion sorce with an incident beam which may be perpendicular to the surface or inclined at an angle of up to, for example, 45°; under these conditons the Applicants have etched cadmium mercury telluride at a rate of approximately 4 110 microns an hour. The etch rate of the Shipley resist was found to be between 0.1 and 0.3 times that of the cadmium mercury telluride. Therefore approximately 4 hours are needed to etch the slots 8 through the 15 microns thickness of the wafer 1. A 115 typical thickness for the layer 10 is 5 to 7.5 microns. By ion-beam etching in this manner the Applicants have found that steep side walls having a slope of, for example, 75° can be achieved. Inthisway narrow slots 8 can be formed in the wafer 1 so that a large 120 proportion of the wafer can be used to provide the detector elements. The remaining strip portions 9 may be for example 200 microns wide, and the slots 8 may be for example 10 microns wide etched through 10 micron wide windows in the masking 125 layer 10. Although Figure 5 shows only fourteen such strip portions 9 across the diameter of the wafer it should be understood that there are actually many more present. In the next stage of manufacture the parts ofthe 130 photoresist layer 10 remaining on the strip portions 4 GB 2 027 986 A 4 9 is removed after which the thickness ofthe strip portions 9 is reduced to for example 10 microns while rounding their exposed longitudinal upper edges. This thickness reduction and rounding may 5 be effected by polishing and etching in a manner such as that described in said co-pending U.K. Application 30800/75 Serial No. 1559473 (PHB 32508). Figure 6 shows in cross-section the strip portions 9 after the etching process; due to the 10 distortion ofthe relative dimensions ofthe drawing the rounding ofthe longitudinal edges is not apparent in this Figure, but it is illustrated in the close-up view of Figure 7. It should also be noted that the wax layer parts exposed by the slots 8 are removed 15 during the etching of the slots 8 and during the subsequent thinning and rounding treatment. The exposed upper surface ofthe strip portions 9 and their side walls are now provided with a passivating layer 14, for example by anodically 20 oxidizing the cadmium mercury telluride surface in known manner. The strip portion 11 serves to interconnect the strip portions 9 during such an anodizing treatment. Both the passivating layers 4 and 14 are illustrated in the close-up cross-sectional 25 view of one such strip portion 9 shown in Figure 7. A further layer of photoresist is then provided and is selectively exposed and developed to form a masking layer 16 having a pattern for dividing the strip portions 9 along their length into a plurality of 30 separate bodies 21 of infra-red sensitive material. This is effected by etching through the thickness of the portions 9 so as to form slots which extend perpendicular to the slots 8. This etching step also may be effected in a manner similar to that de-35 scribed with reference to Figure 4 by using a beam 17 of argon ions. This step is illustrated in Figure 8. The length of each body 21 formed from the strip portions 9 in this embodiment is sufficient to provide a linear array of fourdetector elements as will now 40 be described with reference to Figures 9 to 17. The bodies 21 may thus have for example a length of 250 microns, a width of 200 microns and a thickness of 10 microns. A body 21 is removed from the polishing block 5 45 and is mounted on an area of a surface of an insulating substrate 22. The surface ofthe body 21 passivated by the layer 4 is secured to the surface of the substrate 22, for example by a thin adhesive layer 23 which is illustrated in the cross-sectional 50 views of Figures 11,12 and 15. The substrate 22 may be of optically-polished sapphire. The body 21 is shaded in Figure 9 for the sake of clarity. Next a layer of photoresist is provided over the surface of the substrate 22 and body 21, and is 55 selectively exposed and developed to form a first photoresist masking layer 24 on a part ofthe upper surface of both the body 21 and the substrate 22. The layer 24 consists of a stripe of photoresist which is shown shaded in Figure 10. The stripe 24 extends 60 locally across the body 21 in a direction substantially perpendicular to those along which the body 21 will subsequently be divided into the desired linear array. The stripe 24 is present on the passivating laySr 14 on the body surface where the underlying 65 masked area defines the passivated active area of the detector element; in this active area which may be for example 50 microns wide the infra-red radiation is to be sensed. The areas not masked by the stripe 24 are subsequently provided with a metallization pattern as will be described hereinafter. The stripe 24 determines a separation in the metallization pattern on the body 21 and extends « onto the substrate 22 to also separate parts ofthe metallization pattern where subsequentlyformed on , the substrate 22. Before depositing metal for said metallization pattern a mesa is formed at the body surface by , ion-beam etching. This is illustrated in Figure 11. While using the stripe 24 as an etchant mask the exposed part of the passivating layer 14 and an underlying portion ofthe infra-red sensitive material is removed by bombardment with a beam 27 of for example argon ions. The etching conditions maybe similar to those described previously in connection with Figures 4 and 8. However the bombardment is-effected for a shorter time so that the etching occurs through only part ofthe thickness ofthe body 21. As a result there is formed a mesa 31 upstanding on the remainder ofthe body 21; this mesa 31 of infra-red sensitive material is topped by the remainder of the masking stripe 24, and the remainder ofthe passivating layer 14 is present between the top ofthe mesa 31 and the stripe 24. The broken line 26 in Figure 11 indicates the original passivated surface ofthe body 21. The ion bombardment also etches to a lesser extent the photoresist stripe 24 and the exposed surface ofthe substrate 22, but this is not indicated in the drawing forthe sake of simplicity. The Applicants have found that the etch rate of anodic oxide which forms the layer 14 is approximately 1.3 times that of the underlying cadmium mercury telluride, and that there does not occur any significant removal ofthe layer 14 under the edge of the masking layer 24 during the ion-beam etching; this is important since it is desirable for the layer 14 to adjoin at its edges the subsequently provided metal electrodes. Similarly no significant etching occurs ofthe layer 4 under the edge ofthe body 21. The Applicants have found that ion-beam etching permits the mesa 31 to be formed in a reproducible ; manner with a well-defined shape by uniform removal of cadmium mercury telluride from the unmasked surface parts ofthe body 21. The cadmium * mercury telluride is etched to a uniform depth of at least 0.5 micron and preferably much deeperfor example 2 or 3 microns; the resulting structure permits a significant proportion ofthe current occur-" ring between the detector electrodes in operation of the final detector element to flow across the bulk of the mesa 31 between its side-walls rather than adjacent its top surface. The ion-beam etching permits the side-walls ofthe mesa 31 to be comparatively steep, for example with a slope of 75°. The factors that control the slope include the angle ofthe beam 27, the shape and etching ofthe resist 24 and any redeposition of the ejected target atoms. After forming the mesa 31, metal is deposited to form a layer 33 on the photoresist stripe 24, on parts ofthe body 21 not masked by the stripe 24, and on the area ofthe surface ofthe substrate 22 around the 70 75 80 85 90 95 100 105 110 115 120 125 130 5" GB 2 027 986 A 5 body 21. This metal layer 33 is thus deposited on both the side-walls ofthe mesa 31 and on the surface ofthe remainder ofthe body 21. The resulting structure is illustrated in Figure 12. 5 Preferably the metal is deposited by evporation because chromium is difficult to sputter, and evaporation is a relatively cool, low energy process which does not significantly damage the cadmium mercury telluride. The Applicants have found that even 10 evaporated metal can have good adhesion to the topographically rough surfaces produced by the ion-beam etching on both the cadmium mercury telluride body 21 and the sapphire substrate 22. However it is of course possible to deposit the metal 15 in other ways, for example by sputtering. The Applicants have found it is advantageous for the metal to consist of a first layer of chromium deposited in contact with the infra-red sensitive material (because ofthe strong adhesion of chro-20 mium to both cadmium mercury telluride and sapphire) and a thicker second layer of gold deposited on the chromium iayerto reduce the electrical resistance ofthe metal film; chronium has both a thermal expansion coefficient and a work function 25 compatible to that of cadmium mercury telluride and does not form an amalgam with either mercury or gold at temperatures below approximately 150°C. Such an evaporated gold-chromium layer 33 can have a particularly strong adhesion to both the body 30 21 and the substrate 22. The chromium may be for example 0.05 micron thick, and the gold may be for example 0.5 micron thick. The masking layer 24 is then removed to lift away the metal thereon and to leave the remainder of the 35 layer 33 as a metallization pattern 35,36 on both the body 21 and the substrate 22, as illustrated in Figure 13. Since the layer 24 is of photoresist it can be removed by immersing in acetone and possibly using agitation to aid the removal in known manner. 40 The remaining metallization pattern consists of two separate parts 35 and 36 each of which extends on the side-walls ofthe mesa 31 and will be further processed subsequently to form separate detector electrodes contacting these side-walls ofthe detec-45 tor elements. This further processing involves masking and etching the body 21 and the metallization pattern 35, 36 to divide them into a desired pattern of detector elements and their electrodes. For this purpose a 50 second masking layer 44 is provided on most ofthe metallization pattern 35,36 and most ofthe body 21 where not covered by the pattern 35,36. This layer 44 may also be formed of photoresist such as for example Shipley resist AZ1350H and has a plurality 55 of stripe-shaped windows which are formed by selective exposure and development ofthe photoresist. As shown in Figure 14, these windows 45 extend 60 substantially parallel to each other across the upper surface ofthe body 21 and then diverge away from each other across the metallization pattern 35,36 on the substrate 22. In this way a closely-packed linear array of small detector elements can be formed with 65 large contact pads on the substrate 22 for external connectors. The windows 45 extend across the body 21 in a direction substantially perpendicular to that along which the earlier stripe 24 extended; such transverse stripe features in the two masks 24 and 44 provide a comparatively easy way of defining a linear element array in a reproducible manner. The windows 45 expose parts ofthe body 21 and ofthe metallization patern 35,36 which are now to be removed from the substrate 22 by ion-beam etching. This etching may be effected using a beam 47 of argon ions in a manner similarto that described hereinbefore with reference to Figure 8. The etching is effected throughout the thickness ofthe body 21 and throughout the thickness ofthe layer pattern 35, 36 while using the layer 44 as an etchant mask. The width ofthe stripe-shaped window 45 may be for example 12.5 microns, and the width ofthe masked area ofthe body 21 between adjacent windows 45 may be 50 microns. The steep side-walls produced by ion-beam etching ofthe cadmium mercury telluride and the only very small underetching which occurs permit the fabrication of a very closely packed array of detector elements from the monolithic body 21; this is a considerable advantage over the use of chemical solutions as etchants. Thus, the spacing between adjacent elements ofthe array formed in this way may be very small, for example 10 microns. The argon ions also etch away the exposed metallization in the same etching step. The etching is continued for a sufficiently long time to etch through not only the exposed parts ofthe body 21, but also through the parts ofthe body 21 where covered by the exposed parts ofthe metallization pattern 35,36. The ion-beam etching also removes the exposed parts of the passivating Iayer4and 14 between the elements ofthe array without significant lateral etching under the edges of either the masking layer 44 or the resulting elements. After removing the second masking layer 44, the resulting detector arrangement is as shown in Figures 16 and 17. The group of four detector elements 51,52,53 and 54 so formed are arranged as a linear array having on one side a common electrode 55 formed from the metallization pattern part 35 and on the opposite side individual electrodes 61,62,63,64 respectively which are formed from the metallization pattern part 36. Each of these detectors comprises a mesa 31 ofthe infra-red sensitive material with the separate metal electrodes 55 and for example 64 on the opposite side-walls of the mesa 31, as illustrated for detector element 54 in Figure 17. This mesa contacting ofthe elements 51 to 54 results, during operation, in a reduction ofthe current density which occurs near the extremities of the electrode and adjacent the top surface ofthe mesa 31; in spite of the passivating layer 14 covering this surface the charge-carrier recombination velocity is generally higher at this surface than in the bulk so a significant advantage can be obtained with this mesa structure (as compared with electrodes on a flat surface) because a significant advantage can be obtained with this mesa structure (as compared with electrodes on a flat surface) because a significant proportion ofthe current can flow across the bulk of 70 75 80 85 90 95 100 105 110 115 120 125 130 6 GB 2 027 986 A 6 the mesa 31 between its side-walls. This can lead to significant performance benefits forthe detector element, for example less low-frequency noise. As a result ofthe ion-beam etching ofthe passivat-5 ing layer 14 using the metallization mask 24 as an etchant mask, the passivating layer 14 remaining over the top ofthe mesa 31 of each detector element 51 to 54 is adjoined at the edge by its separate electrodes 55 and for example 64. Thus, as illus-10 trated in Figure 17 for detector element 54, no unpassivated infra-red sensitive material is exposed at the top surface adjacent the extremity of the electrodes 55 and for example 64. This also enhances the performance ofthe detector elements 51 15 to 54. The fabrication process described with reference to Figures 9to 17 requires only two masking steps. The first mask 24 determines a metallization pattern and its alignment is not critical. The second mask 44 20 determines the desired pattern of elements and their electrodes which are formed from the body 21 and the metallization pattern respectively. This process is described and claimed in our co-pending Patent Application 31751/78 which is filed on the same day 25 as the present Application and to which reference is invited. Such a process has an advantage in not requiring a critical alignment of separate masking steps, one for dividing the body 21 into elements and another for defining the electrode pattern, in spite of 30 the very small spacing between adjacent elements of the array. External connections can be made to the elements ofthe array by bonding wires to the parts ofthe electrodes 55,61,62,63 and 64 where they are 35 present directly on the substrate 22. Many modifications are present within the scope ofthe present invention. Figures 18 and 19 illustrate one such modification in the fabrication of which the ion-beam etching step illustrated in Figure 11 has 40 been continued across the whole thickness ofthe body 21 to the surface ofthe substrate 22 to shape the body 21 into an upstanding mesa 31 of cadmium mercury telluride which remains standing on the substrate 22 and is topped by the stripe 24 and part 45 ofthe passivating layer 14. The processing is then continued as described with reference to Figures 12 to 15 to form the detector device of Figures 18 and 19 having detector elements 71 to 74. in this modified device the contact between the element body and its 50 electrodes 55 and for example 64 is formed wholly by the metal on the side-walls ofthe mesa, as illustrated in Figure 19 for element 74. In such a wholly-mesa element a higher proportion ofthe current can flow across the bulk of the body. 55 Furthermore in the detector of Figures 16 and 17 the metallization pattern 35,36 may be locally weakened where it extends from the edge ofthe body 21 to the substrate 22, for example if the adhesive layer 23 does not extend all the way to this edge; in the 60 detector of Figures 18 and 19, however, such a deficiency in the adhesive layer may be removed by the ion-beam etching ofthe mesa 31 down to the substrate surface and this can improve the metallization. 65 By forming a body 21 of different size and/or by using a different pattern for the first masking layer 24 and/or the second masking layer 44 different groups of detector elements can be formed on the substrate 22. Figures 20 to 22 illustrate one example in which 70 the strip portions 9 and hence the bodies 21 formed from the wafer are sufficiently wide to accommodate two back-to-back linear arrays of detector elements which together form a 2-dimensional area array. In this case as shown in Figure 20, the first masking 75 layer 24 for determining the metallization pattern consists of two photoresist stripes which are parallel to each other along the length ofthe body 21 and then diverge from each other over the substrate 22. The stripes 24 may each for for example 50 microns 80 wide and may be separated by a distance of for example 100 microns over the body 21. In orderto divide the body 21 and metallization pattern into the area array of elements and their electrodes, the second masking layer 44 has a corresponding set of 85 stripe-shaped windows 45 on each side ofthe body 21, as illustrated in Figure 21. As shown in Figure 22, the resulting detector array consists of back-to-back elements such as elements 81 and 82 having individual electrodes such as electrodes 83 and 84 and 90 an intermediate electrode 85 which is common to all the elements and which is defined by the area between the two stripes 24 in Figure 20. All these elements, e.g. 81 and 82, have a mesa structure which is contacted at its side-walls by the element 95 electrodes, e.g. 83,84 and 85. Instead of forming an array of back-to-back elements as shown in Figure 22, alternate element areas of each linear array may be removed by the ion-beam etching used to divide the body 21, 100 thereby forming a staggered array ofthe elements, instead of forming such a long body 21 as that illustrated in Figures 10 and 20, a shorter body 21 may be used and the second masking layer may comprise only one stripe-shaped window 45 so as to 105 form a 2 x 1 linear array or a 2 x 2 area array of elements respectively. By appropriately changing the shape of the stripe-shaped windows 45 in the second masking layer 44, part ofthe infra-red sensitive material between 110 where the electrodes are formed can be removed over the whole thickness ofthe body 21 and across part ofthe width of each element by ion-beam etching in the same step as that illustrated in Figure 15, so as to define a current path between the 115 electrodes which extends through the remaining infra-red sensitive material and is longerthan the distance along a straight line between the contact areas. This technique is described and claimed in another of our co-pending Patent applications. No. 120 31749/78, Serial No. 2027985 which is also filed on * the same day as the present Application and the contents ofthe Specification of which are hereby incorporated by reference into the present Specification. Thus, the windows 45 where they cross the 125 body 21 may be extended sideways to form a plurality of substantially parallel slots which extend from opposite side walls ofthe element to form a meandering current path between the electrodes. This longer current path increases the resistance and 130 charge-carrier transit time in the detector. 7 GB 2 027 986 A 7 Instead of dividing the strip portions 9 shown in Figure 8 into bodies 21 of sufficient size to form a plurality of detector elements, the strip portions 9 may be divided into bodies 21 for forming a single 5 detector element, and the masking, mesa-etching, metallization and lift-off stages illustrated in Figures 10 to 13 may be effected while these bodies 21 are still present on the polishing block 5. In this way individual detector element bodies are formed with 10 their electrodes and these can be removed subsequently from the block 5 and assembled in an array on a detector substrate, for example by using a method such as described and claimed in copending U.K. Patent Application 30806/75 Serial No. 15 1559474 (PHB 32509); in this method interconnections deposited on the substrate can overlap the part ofthe element electrodes extending laterally over the surface ofthe remainder ofthe element body on opposite sides ofthe upstanding mesa. This is one 20 example where it is an advantage not to etch the mesa throughout the thickness ofthe body 21. The ion-beam etching illustrated in Figure 15 forms exposed sides ofthe detector elements. These sides can be passivated by subsequently forming a 25 passivating layer in known manner, although it appears to the Applicants that the ion-beam etched sides already posses some intrinsic passivation, perhaps as a result of implantation ofthe inert ions at the surface. Instead of forming a passivating layer 30 14 on the upper surface ofthe detector elements before metallization and element definition, the sensitive active areas of the elements and their sides can be passivated by a subsequent treatment, although this is not preferred at present. 35 Instead of forming the detector elements of cadmium mercury telluride, other infra-red sensitive materials may be employed, for example other ternary intermetallic chalcogenides such as for example lead tin telluride or other monocrystalline 40 semiconductors such as for example lead sulphide or indium antimonide. In the embodiments described hereinbefore the methods comprise the application of ohmic contact electrodes to element bodies having a uniform 45 material composition and for use in detectors of which the operation is based on intrinsic photoconductivity. However also within the scope ofthe present invention is the manufacture of detector elements each of which has a p-n junction located in 50 the sensitive mesa area ofthe element body; in this case the element has electrodes which extend to the * side-walls of the mesa and make ohmic contact to thep-typeandrt-type regions respectively of the body. 55 It will also be evident that other metals than gold and chromium may be used to form the electrodes, for example aluminium or silver, and that the detector substrate may be of material other than sapphire. Thus, for example the insulating substrate 60 22 may be of for example alumina, silicon or beryllia. Claims (1) 1. A method of manufacturing an infra-red detec-65 tor element including the steps of forming a masking layer on part of a surface of a body of infra-red sensitive material, depositing metal on said masking layer and on a surface part of said body not covered by said masking layer, and removing said masking 70 layer to lift away the metal thereon and leave the metal on said surface part for forming separate electrodes of said detector element, characterized in that, before depositing said metal, infra-red sensitive material is removed from said surface by ion-beam 75 etching while using said masking layer as an etchant mask so as to form a mesa of infra-red sensitive material topped by said masking layer, and in that metal which is deposited on side-walls of said mesa during the deposition is left for forming said sepa-80 rate electrodes after the removal of said masking layer. 2. A method of manufacturing an infra-red detector element including the steps of: (a) forming a masking layer on part of a surface 85 of a body of infra-red sensitive material, (b) using ion-beam etching to remove said material from said surface while using said masking layer as an etchant mask so as to form a mesa of infra-red sensitive material topped by said masking layer, 90 (c) depositing metal on said masking layer and on side-walls of said mesa, and (d) removing the said masking layer to lift away the metal thereon and leave the metal on the side-walls of said mesa for forming separate elec-95 trades of said detector element. 3. A method as claimed in Claim 1 or Claim 2, in which before forming said masking layer a passivating layer is formed at the surface of said body, said masking layer is formed on said passivating layer, 100 and during the ion-beam etching part ofthe passivating layer is removed to leave part of said passivating layer between the top of said mesa and the said masking layer. 4. A method as claimed in Claim 3, in which said 105 passivating layer is formed by anodic oxidation of the surface of said infra-red sensitive material. 5. A method as claimed in any ofthe preceding Claims, in which the ion-beam etching is effected through only part ofthe thickness of said body to 110 form said mesa upstanding on the remainder of said body, and the metal for forming said electrodes is deposited on both the side-walls of said mesa and on the surface ofthe said remainder of said body. 6. A method as claimed in any of Claims 1 to 4, in 115 which the ion-beam etching is effected through the whole thickness of said body so that the contact between said electrodes and said body is formed wholly by the metal on the side-walls of said mesa. 7. A method as claimed in any ofthe preceding 120 Claims, in which said masking layer is formed from a layer of photoresist. 8. A method as claimed in any ofthe preceding Claims, in which said metal is deposited by evaporation. 125 9. A method as claimed in any ofthe preceding Claims, in which said metal comprises a first layer of chromium deposited in contact with the infra-red sensitive material and a thicker second layer of gold deposited on the chromium layer. 130 10. An infra-red detector element manufactured 8 GB 2 027 986 A 8 by a method claimed in any ofthe preceding Claims. 11. An infra-red detector device comprising at least one detector element having a mesa of infrared sensitive material with separate metal electrodes 5 on side-walls of said mesa. 12. An infra-red detector device as claimed in Claim 11, in which a passivating layer is present over the top ofthe mesa and is adjoined at the edge by the separate metal electrodes. 10 13. A method as claimed in any of Claims 1 to 10 or a detector device as claimed in Claim 11 or Claim 12, in which said infra-red sensitive material is cadmium mercury telluride (Cdi_xHgxTe, where 0< x <1). 15 14. A method of manufacturing an infra-red detector element substantially as described with reference to Figures 10 to 13 ofthe accompanying drawings. 15. A method of manufacturing an infra-red 20 detector element substantially as described with reference to Figures 18 and 19 ofthe accompanying drawings. 16. A method of manufacturing an infra-red detector element substantially as described with 25 reference to Figures 20 to 22 of the accompanying drawings. 17. An infra-red detector device substantially as described with reference to Figures 16 and 17 ofthe accompanying drawings. 30 18. An infra-red detector device substantially as described with reference to Figures 18 and 19 ofthe accompanying drawings. 19. An infra-red detector device substantially as described with reference to Figure 22 ofthe accom- 35 panying drawings. Printed for Her Majesty's Stationery Office by Croydon Printing Company Limited, Croydon Surrey, 1980. «v Published by the Patent Office, 25 Southampton Buildings, London, WC2A1 AY, from which copies may be obtained. GB7831750A 1978-07-31 1978-07-31 Infra-red detectors Expired GB2027986B (en) Priority Applications (8) Application Number Priority Date Filing Date Title GB7831750A GB2027986B (en) 1978-07-31 1978-07-31 Infra-red detectors DE7979200396T DE2967235D1 (en) 1978-07-31 1979-07-17 Infra-red detector elements and their manufacture EP79200396A EP0007667B1 (en) 1978-07-31 1979-07-17 Infra-red detector elements and their manufacture US06/059,831 US4301591A (en) 1978-07-31 1979-07-23 Method of manufacturing infra-red detector elements CA000332583A CA1150806A (en) 1978-07-31 1979-07-26 Infra-red detector elements and their manufacture JP9689479A JPS5548981A (en) 1978-07-31 1979-07-31 Infrared ray detecting element and method of manufacturing same US06/319,776 US4435462A (en) 1978-07-31 1981-11-09 Infra-red detector elements JP59028838A JPS59188178A (en) 1978-07-31 1984-02-20 Infrared ray detector Applications Claiming Priority (1) Application Number Priority Date Filing Date Title GB7831750A GB2027986B (en) 1978-07-31 1978-07-31 Infra-red detectors Publications (2) Publication Number Publication Date GB2027986A true GB2027986A (en) 1980-02-27 GB2027986B GB2027986B (en) 1983-01-19 Family ID=10498773 Family Applications (1) Application Number Title Priority Date Filing Date GB7831750A Expired GB2027986B (en) 1978-07-31 1978-07-31 Infra-red detectors Country Status (6) Country Link US (2) US4301591A (en) EP (1) EP0007667B1 (en) JP (2) JPS5548981A (en) CA (1) CA1150806A (en) DE (1) DE2967235D1 (en) GB (1) GB2027986B (en) Cited By (6) * Cited by examiner, † Cited by third party Publication number Priority date Publication date Assignee Title US4467201A (en) * 1981-03-30 1984-08-21 U.S. Philips Corporation Imaging devices and systems US4482807A (en) * 1981-03-30 1984-11-13 U.S. Philips Corporation Imaging devices and systems GB2185852A (en) * 1986-01-27 1987-07-29 Canon Kk Method of producing photosensor US4709252A (en) * 1982-07-16 1987-11-24 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Integrated photo-responsive metal oxide semiconductor circuit GB2205442A (en) * 1987-05-27 1988-12-07 Marconi Co Ltd Manufacture of infra-red detectors US5647954A (en) * 1992-02-26 1997-07-15 Gec Marconi Limited Manufacture of etched substrates such as infrared detectors Families Citing this family (13) * Cited by examiner, † Cited by third party Publication number Priority date Publication date Assignee Title GB2095898B (en) * 1981-03-27 1985-01-09 Philips Electronic Associated Methods of manufacturing a detector device US4559695A (en) * 1981-03-27 1985-12-24 U.S. Philips Corporation Method of manufacturing an infrared radiation imaging device US4445269A (en) * 1981-08-27 1984-05-01 The United States Of America As Represented By The Scretary Of The Army Methods of making infrared photoconductors with passivation control DE3200853A1 (en) * 1982-01-14 1983-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt SEMICONDUCTOR ARRANGEMENT WITH AN IMAGE RECORDING UNIT AND WITH A READING UNIT AND METHOD FOR THEIR PRODUCTION US4439912A (en) * 1982-04-19 1984-04-03 The United States Of America As Represented By The Secretary Of The Army Infrared detector and method of making same GB2207802B (en) * 1982-08-27 1989-06-01 Philips Electronic Associated Thermal-radiation imaging devices and systems,and the manufacture of such imaging devices NO843614L (en) * 1983-09-13 1986-06-23 Marconi Co Ltd INFRA-ROED DETECTOR FR2604298B1 (en) * 1986-09-19 1988-10-28 Commissariat Energie Atomique PROCESS FOR MAKING AN ELECTRICAL CONTACT TAKING ON A SUBSTRATE IN P-CONDUCTIVITY HGCDTE AND APPLICATION TO THE MANUFACTURE OF A N / P DIODE US4818565A (en) * 1987-10-30 1989-04-04 Regents Of The University Of Minnesota Method to stabilize metal contacts on mercury-cadmium-telluride alloys US5936268A (en) * 1988-03-29 1999-08-10 Raytheon Company Epitaxial passivation of group II-VI infrared photodetectors US5091288A (en) * 1989-10-27 1992-02-25 Rockwell International Corporation Method of forming detector array contact bumps for improved lift off of excess metal GB2265253A (en) * 1992-03-18 1993-09-22 Philips Electronics Uk Ltd Infrared detector devices and their manufacture using directional etching to define connections GB9517930D0 (en) * 1995-09-01 1995-11-01 Imperial College Electronically gated microstructure Family Cites Families (8) * Cited by examiner, † Cited by third party Publication number Priority date Publication date Assignee Title NL6604962A (en) * 1966-04-14 1967-10-16 NL6607971A (en) * 1966-06-09 1967-12-11 FR2096876B1 (en) * 1970-07-09 1973-08-10 Thomson Csf US3977018A (en) * 1972-12-04 1976-08-24 Texas Instruments Incorporated Passivation of mercury cadmium telluride semiconductor surfaces by anodic oxidation US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements US4027323A (en) * 1976-09-07 1977-05-31 Honeywell Inc. Photodetector array delineation method US4069095A (en) * 1976-09-07 1978-01-17 Honeywell Inc. Method of preparing photodetector array elements JPS5496894A (en) * 1978-01-17 1979-07-31 Nat Jutaku Kenzai Method of drilling connecting hole in metallic plate such as freeze board 1978 1978-07-31 GB GB7831750A patent/GB2027986B/en not_active Expired 1979 1979-07-17 EP EP79200396A patent/EP0007667B1/en not_active Expired 1979-07-17 DE DE7979200396T patent/DE2967235D1/en not_active Expired 1979-07-23 US US06/059,831 patent/US4301591A/en not_active Expired - Lifetime 1979-07-26 CA CA000332583A patent/CA1150806A/en not_active Expired 1979-07-31 JP JP9689479A patent/JPS5548981A/en active Granted 1981 1981-11-09 US US06/319,776 patent/US4435462A/en not_active Expired - Lifetime 1984 1984-02-20 JP JP59028838A patent/JPS59188178A/en active Pending Cited By (7) * Cited by examiner, † Cited by third party Publication number Priority date Publication date Assignee Title US4467201A (en) * 1981-03-30 1984-08-21 U.S. Philips Corporation Imaging devices and systems US4482807A (en) * 1981-03-30 1984-11-13 U.S. Philips Corporation Imaging devices and systems US4709252A (en) * 1982-07-16 1987-11-24 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Integrated photo-responsive metal oxide semiconductor circuit GB2185852A (en) * 1986-01-27 1987-07-29 Canon Kk Method of producing photosensor GB2185852B (en) * 1986-01-27 1990-03-21 Canon Kk Method of producing photosensor GB2205442A (en) * 1987-05-27 1988-12-07 Marconi Co Ltd Manufacture of infra-red detectors US5647954A (en) * 1992-02-26 1997-07-15 Gec Marconi Limited Manufacture of etched substrates such as infrared detectors Also Published As Publication number Publication date GB2027986B (en) 1983-01-19 JPS6233758B2 (en) 1987-07-22 EP0007667B1 (en) 1984-09-26 JPS5548981A (en) 1980-04-08 EP0007667A1 (en) 1980-02-06 US4435462A (en) 1984-03-06 CA1150806A (en) 1983-07-26 DE2967235D1 (en) 1984-10-31 US4301591A (en) 1981-11-24 JPS59188178A (en) 1984-10-25 Similar Documents Publication Publication Date Title US4301591A (en) 1981-11-24 Method of manufacturing infra-red detector elements US4321615A (en) 1982-03-23 Manufacture of an infra-red detector element, and detection elements so manufactured US4310583A (en) 1982-01-12 Manufacture of a group of infra-red detector elements, and a group so manufactured US5637510A (en) 1997-06-10 Method for fabricating solar cell US4623751A (en) 1986-11-18 Photovoltaic device and its manufacturing method US4610077A (en) 1986-09-09 Process for fabricating a wraparound contact solar cell US4131488A (en) 1978-12-26 Method of semiconductor solar energy device fabrication US4824489A (en) 1989-04-25 Ultra-thin solar cell and method US3751292A (en) 1973-08-07 Multilayer metallization system US3432919A (en) 1969-03-18 Method of making semiconductor diodes US4948740A (en) 1990-08-14 Method for the integrated series-interconnection of thick-film solar cells and method for the manufacture of tandem solar cells JPS5814737B2 (en) 1983-03-22 Transfer method of a thin wire relative to a substrate of semiconductor material US3046324A (en) 1962-07-24 Alloyed photovoltaic cell and method of making the same US4320250A (en) 1982-03-16 Electrodes for concentrator solar cells, and methods for manufacture thereof US3396318A (en) 1968-08-06 Charged particle detector with lithium compensated intrinsic silicon as an intermediate region GB1568958A (en) 1980-06-11 Methods of manufacturing infra-red sensitive devices JPH1140832A (en) 1999-02-12 Thin-film solar cell and manufacture therefor US4027323A (en) 1977-05-31 Photodetector array delineation method JPH11274538A (en) 1999-10-08 Substrate for forming high-strength thin semiconductor element, high-strength thin semiconductor element and manufacture thereof US3956820A (en) 1976-05-18 Method of manufacturing a semiconductor device having a lead bonded to a surface thereof US3728236A (en) 1973-04-17 Method of making semiconductor devices mounted on a heat sink RU2781508C1 (en) 2022-10-12 Method for manufacturing a photoelectric converter on a tapered germanium substrate GB1559473A (en) 1980-01-16 Manufacturing infra-red detector elements EP0383816B1 (en) 1992-04-01 Process methodology for two-sided fabrication of devices on thinned silicon JPS6293981A (en) 1987-04-30 Manufacture of thin semiconductor device Legal Events Date Code Title Description 1986-03-26 PCNP Patent ceased through non-payment of renewal fee
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