GB1043873A – Improvements in and relating to the manufacture of semiconductor devices
– Google Patents
GB1043873A – Improvements in and relating to the manufacture of semiconductor devices
– Google Patents
Improvements in and relating to the manufacture of semiconductor devices
Info
Publication number
GB1043873A
GB1043873A
GB917864A
GB917864A
GB1043873A
GB 1043873 A
GB1043873 A
GB 1043873A
GB 917864 A
GB917864 A
GB 917864A
GB 917864 A
GB917864 A
GB 917864A
GB 1043873 A
GB1043873 A
GB 1043873A
Authority
GB
United Kingdom
Prior art keywords
wire
adhesive
wires
type
magnesium oxide
Prior art date
1964-03-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB917864A
Inventor
Bohdan Marian Beinkowski
John Gerard Kirwan
Peter Morland Tipple
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1964-03-04
Filing date
1964-03-04
Publication date
1966-09-28
1964-03-04
Application filed by ASSOCIATED SEMICONDUCTOR MFT
filed
Critical
ASSOCIATED SEMICONDUCTOR MFT
1964-03-04
Priority to GB917864A
priority
Critical
patent/GB1043873A/en
1965-02-27
Priority to NL6502527A
priority
patent/NL6502527A/xx
1966-09-28
Publication of GB1043873A
publication
Critical
patent/GB1043873A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Abstract
1,043,873. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MANUFACTURES Ltd. March 4, 1964, No. 9178/64. Heading H1K. A wire or pellet is alloyed to a semiconductor body by first securing the wire to the body with an adhesive, enclosing the wire with material to form a refractory mould, heating to remove the adhesive and to alloy the wire to the body over the area which had been occupied by the adhesive fillet. In one example a plurality of transistors are produced by attaching three wires 3, 4 and 5 (Fig. 2) of lead with 5% antimony to the surface of a germanium wafer consisting of a P-type body 1 with an antimony diffused N-type layer 2, by means of a polymethacrylic ester adhesive layer 6 which forms a fillet portion 7 at each wire. Selected portions of such wire are then cut away to provide a plurality of groups as shown in Fig. 3, and the whole surface and wires are covered with a paste 8 (Fig. 5) of magnesium oxide in methanol which after drying, acts as a mould. On heating the adhesive lacquer evaporates leaving voids 9 and 10 and the wire material wets the germanium surface in the area originally occupied by the lacquer fillets. The magnesium oxide mould is etched away and a blob of aluminium paint is applied to the centre wire 4 of each group. The whole is recoated with magnesium oxide and heated so that antimony diffusion extends the N-type region under each wire and alloying of the aluminium results in a P-type recrystallized region under each centre wire 4. The body is masked and etched to remove the N-type layer 2 from the edges and underside surface and indium discs are alloyed to the surface opposite each group of wires to provide contacts to the P-region. The body is divided into individual transistor sections, each section comprising 2 base electrodes 3 and 5 to the N-type layer portion, emitter electrode 4 and collector electrode 24 (Fig. 11) which is soldered to a chrome-iron header member 25. The devices are completed by etching and encapsulation treatments. A further example is described in which the prewetting step before the application of the aluminium is omitted and in another example two wires only instead of three are used to provide the electrodes.
GB917864A
1964-03-04
1964-03-04
Improvements in and relating to the manufacture of semiconductor devices
Expired
GB1043873A
(en)
Priority Applications (2)
Application Number
Priority Date
Filing Date
Title
GB917864A
GB1043873A
(en)
1964-03-04
1964-03-04
Improvements in and relating to the manufacture of semiconductor devices
NL6502527A
NL6502527A
(en)
1964-03-04
1965-02-27
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
GB917864A
GB1043873A
(en)
1964-03-04
1964-03-04
Improvements in and relating to the manufacture of semiconductor devices
Publications (1)
Publication Number
Publication Date
GB1043873A
true
GB1043873A
(en)
1966-09-28
Family
ID=9866916
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB917864A
Expired
GB1043873A
(en)
1964-03-04
1964-03-04
Improvements in and relating to the manufacture of semiconductor devices
Country Status (2)
Country
Link
GB
(1)
GB1043873A
(en)
NL
(1)
NL6502527A
(en)
1964
1964-03-04
GB
GB917864A
patent/GB1043873A/en
not_active
Expired
1965
1965-02-27
NL
NL6502527A
patent/NL6502527A/xx
unknown
Also Published As
Publication number
Publication date
NL6502527A
(en)
1965-09-06
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None