GB1060588A – Semiconductor switch
– Google Patents
GB1060588A – Semiconductor switch
– Google Patents
Semiconductor switch
Info
Publication number
GB1060588A
GB1060588A
GB43807/64A
GB4380764A
GB1060588A
GB 1060588 A
GB1060588 A
GB 1060588A
GB 43807/64 A
GB43807/64 A
GB 43807/64A
GB 4380764 A
GB4380764 A
GB 4380764A
GB 1060588 A
GB1060588 A
GB 1060588A
Authority
GB
United Kingdom
Prior art keywords
regions
type
semi
gate electrode
electrode
Prior art date
1963-11-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43807/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-11-26
Filing date
1964-10-27
Publication date
1967-03-08
1964-10-27
Application filed by General Electric Co
filed
Critical
General Electric Co
1967-03-08
Publication of GB1060588A
publication
Critical
patent/GB1060588A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
abstract
4
OAICVXFJPJFONN-UHFFFAOYSA-N
Phosphorus
Chemical compound
[P]
OAICVXFJPJFONN-UHFFFAOYSA-N
0.000
abstract
2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound
O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound
[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
2
238000009792
diffusion process
Methods
0.000
abstract
2
229910052698
phosphorus
Inorganic materials
0.000
abstract
2
239000011574
phosphorus
Substances
0.000
abstract
2
229910052710
silicon
Inorganic materials
0.000
abstract
2
239000010703
silicon
Substances
0.000
abstract
2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
Boron
Chemical compound
[B]
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
0.000
abstract
1
GYHNNYVSQQEPJS-UHFFFAOYSA-N
Gallium
Chemical compound
[Ga]
GYHNNYVSQQEPJS-UHFFFAOYSA-N
0.000
abstract
1
229910052782
aluminium
Inorganic materials
0.000
abstract
1
XAGFODPZIPBFFR-UHFFFAOYSA-N
aluminium
Chemical compound
[Al]
XAGFODPZIPBFFR-UHFFFAOYSA-N
0.000
abstract
1
239000004411
aluminium
Substances
0.000
abstract
1
229910052796
boron
Inorganic materials
0.000
abstract
1
230000000295
complement effect
Effects
0.000
abstract
1
229910052733
gallium
Inorganic materials
0.000
abstract
1
PCHJSUWPFVWCPO-UHFFFAOYSA-N
gold
Chemical compound
[Au]
PCHJSUWPFVWCPO-UHFFFAOYSA-N
0.000
abstract
1
239000010931
gold
Substances
0.000
abstract
1
229910052737
gold
Inorganic materials
0.000
abstract
1
229910000833
kovar
Inorganic materials
0.000
abstract
1
235000012239
silicon dioxide
Nutrition
0.000
abstract
1
239000000377
silicon dioxide
Substances
0.000
abstract
1
238000003466
welding
Methods
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/70—Bipolar devices
H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Abstract
1,060,588. Semi-conductor devices. GENERAL ELECTRIC CO. Oct. 27, 1964 [Nov. 26, 1963], No. 43807/64. Heading H1K. In a semi-conductor switching device comprising four regions of alternate conductivity types with ohmic contacts applied to the two outer regions, a gate electrode is connected to a fifth region formed in, and of the opposite conductivity type to, one of the outer regions. As shown, Fig. 3, a semi-conductor controlled rectifier is produced by diffusing gallium into a slice 11 of N-type silicon to form P-type regions 12 and 13. Part of the lower surface of the slice is masked with a silicon dioxide layer 21 and phosphorus is diffused into the exposed surfaces to form N-type regions 14 and 17. A cathode electrode and a gate electrode are applied to regions 14 and 17 respectively by ultrasonically welding an aluminium wire to the surface. An anode electrode is applied to region 12 by flowing gold on to the surface and joining it to a » Kovar » (Registered Trade Mark) header. The complementary device, Fig. 4 (not shown) may be produced by starting with a P-type silicon wafer (23), forming N-type layers (24), (25) by a phosphorus diffusion, and forming P-type regions (26), (27) by a boron diffusion. Electrodes (28), (29), (30) are applied, and in this embodiment the main electrode (28) adjacent the gate electrode (30) is the cathode. A plurality of devices may be simultaneously manufactured in a wafer which is then cut up.
GB43807/64A
1963-11-26
1964-10-27
Semiconductor switch
Expired
GB1060588A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US326162A
US3284680A
(en)
1963-11-26
1963-11-26
Semiconductor switch
Publications (1)
Publication Number
Publication Date
GB1060588A
true
GB1060588A
(en)
1967-03-08
Family
ID=23271060
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB43807/64A
Expired
GB1060588A
(en)
1963-11-26
1964-10-27
Semiconductor switch
Country Status (5)
Country
Link
US
(1)
US3284680A
(en)
DE
(1)
DE1464979C3
(en)
GB
(1)
GB1060588A
(en)
NL
(1)
NL142284B
(en)
SE
(1)
SE312380B
(en)
Families Citing this family (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4089024A
(en)
*
1972-09-20
1978-05-09
Hitachi, Ltd.
Semiconductor switching device
US4163241A
(en)
*
1975-06-13
1979-07-31
Hutson Jearld L
Multiple emitter and normal gate semiconductor switch
US5479031A
(en)
*
1993-09-10
1995-12-26
Teccor Electronics, Inc.
Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
Family Cites Families (5)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US2936384A
(en)
*
1957-04-12
1960-05-10
Hazeltine Research Inc
Six junction transistor signaltranslating system
NL239104A
(en)
*
1958-05-26
1900-01-01
Western Electric Co
US3023347A
(en)
*
1960-07-15
1962-02-27
Westinghouse Electric Corp
Oscillator having predetermined temperature-frequency characteristics
BE613793A
(en)
*
1961-04-14
US3123750A
(en)
*
1961-10-31
1964-03-03
Multiple junction semiconductor device
1963
1963-11-26
US
US326162A
patent/US3284680A/en
not_active
Expired – Lifetime
1964
1964-10-27
GB
GB43807/64A
patent/GB1060588A/en
not_active
Expired
1964-11-24
DE
DE1464979A
patent/DE1464979C3/en
not_active
Expired
1964-11-25
NL
NL646413665A
patent/NL142284B/en
not_active
IP Right Cessation
1964-11-26
SE
SE14273/64A
patent/SE312380B/xx
unknown
Also Published As
Publication number
Publication date
DE1464979B2
(en)
1976-01-08
US3284680A
(en)
1966-11-08
DE1464979C3
(en)
1979-11-15
NL142284B
(en)
1974-05-15
NL6413665A
(en)
1965-05-27
SE312380B
(en)
1969-07-14
DE1464979A1
(en)
1969-04-30
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