GB1064251A – Stress-sensing devices
– Google Patents
GB1064251A – Stress-sensing devices
– Google Patents
Stress-sensing devices
Info
Publication number
GB1064251A
GB1064251A
GB36878/63A
GB3687863A
GB1064251A
GB 1064251 A
GB1064251 A
GB 1064251A
GB 36878/63 A
GB36878/63 A
GB 36878/63A
GB 3687863 A
GB3687863 A
GB 3687863A
GB 1064251 A
GB1064251 A
GB 1064251A
Authority
GB
United Kingdom
Prior art keywords
stress
diodes
current
diode
maximum
Prior art date
1962-10-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36878/63A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1962-10-04
Filing date
1963-09-19
Publication date
1967-04-05
1963-09-19
Application filed by Western Electric Co Inc
filed
Critical
Western Electric Co Inc
1967-04-05
Publication of GB1064251A
publication
Critical
patent/GB1064251A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
G—PHYSICS
G01—MEASURING; TESTING
G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
G—PHYSICS
G01—MEASURING; TESTING
G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
G01L1/00—Measuring force or stress, in general
G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
H—ELECTRICITY
H04—ELECTRIC COMMUNICATION TECHNIQUE
H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
H04R21/00—Variable-resistance transducers
H04R21/04—Gramophone pick-ups using a stylus; Recorders using a stylus
Abstract
1,064,251. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. Sept. 19, 1963 [Oct. 4, 1962], No. 36878/63. Heading HIK. [Also in Division G1] A stress measuring device employs two parallel connected tunnel diodes 41, 45, Fig. 2, one being formed on a P-type wafer 42 and the other on an N- type wafer 46, the parallel arrangement being biased to operate at the maximum current of the combined current/voltage characteristic without entering the negative resistance region. The value of the current maximum varies with stress applied to the junction while the voltage Vm at which this maximum occurs is substantially constant since the variations under stress of Vm for the individual diodes are equal and opposite (92, 94, Fig. 6, not shown) and consequently cancel. Also, the actual value of the current maximum for each diode varies with temperature in opposite directions and hence the combination is independent of temperature (Fig. 5, not shown). The stress in a member 30 is transmitted to the diodes 41, 45 via a rigid shelf 48 and a resilient member 32 carrying cone-shaped terminals 36, 38, these cones acting to magnify any stress, particularly alternating stress in member 30 at diodes 41, 45. The diodes may be mounted alternatively on a flat spring (54, Fig. 3, not shown) which bends according to the strain in member 30. The diode 41 may be made by fusing a silver ball 40 containing 2% tellurium to a gallium antimonide wafer 42 containing a zinc impurity, and the diode 45 by fusing a cadmium ball 44 containing 5% gold to a gallium antimonide wafer 46 containing tellurium impurity, the fusing process takes only a fraction of a second. Circuits are described (Figs. 1, 4, not shown) which measure the current/voltage characteristic of a single diode and a pair of diodes respectively.
GB36878/63A
1962-10-04
1963-09-19
Stress-sensing devices
Expired
GB1064251A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US228355A
US3182492A
(en)
1962-10-04
1962-10-04
Stabilized tunnel diode stress sensing devices
Publications (1)
Publication Number
Publication Date
GB1064251A
true
GB1064251A
(en)
1967-04-05
Family
ID=22856849
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB36878/63A
Expired
GB1064251A
(en)
1962-10-04
1963-09-19
Stress-sensing devices
Country Status (2)
Country
Link
US
(1)
US3182492A
(en)
GB
(1)
GB1064251A
(en)
Families Citing this family (7)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
BE630360A
(en)
*
1962-03-30
US3295085A
(en)
*
1963-09-03
1966-12-27
Raytheon Co
Semiconductor strain transducer device
US3427410A
(en)
*
1964-10-08
1969-02-11
Electro Voice
Electromechanical transducer
US3336795A
(en)
*
1964-12-18
1967-08-22
Shinko Tsushin Kogyo Kabushiki
Semiconductor force measuring device
US3443041A
(en)
*
1965-06-28
1969-05-06
Bell Telephone Labor Inc
Surface-barrier diode transducer using high dielectric semiconductor material
US3491588A
(en)
*
1966-12-20
1970-01-27
Gen Electric
Strain sensitive tunnel diode
US11189536B2
(en)
*
2018-12-31
2021-11-30
Micron Technology, Inc.
Method and apparatus for on-chip stress detection
Family Cites Families (2)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US2632062A
(en)
*
1949-06-15
1953-03-17
Bell Telephone Labor Inc
Semiconductor transducer
US2929885A
(en)
*
1953-05-20
1960-03-22
Rca Corp
Semiconductor transducers
1962
1962-10-04
US
US228355A
patent/US3182492A/en
not_active
Expired – Lifetime
1963
1963-09-19
GB
GB36878/63A
patent/GB1064251A/en
not_active
Expired
Also Published As
Publication number
Publication date
US3182492A
(en)
1965-05-11
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