GB1075387A – Improvements in semicuoductor device making
– Google Patents
GB1075387A – Improvements in semicuoductor device making
– Google Patents
Improvements in semicuoductor device making
Info
Publication number
GB1075387A
GB1075387A
GB2775565A
GB2775565A
GB1075387A
GB 1075387 A
GB1075387 A
GB 1075387A
GB 2775565 A
GB2775565 A
GB 2775565A
GB 2775565 A
GB2775565 A
GB 2775565A
GB 1075387 A
GB1075387 A
GB 1075387A
Authority
GB
United Kingdom
Prior art keywords
semi
silicon
source
substrates
conductor
Prior art date
1964-07-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2775565A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1964-07-27
Filing date
1965-06-30
Publication date
1967-07-12
1965-06-30
Application filed by General Electric Co
filed
Critical
General Electric Co
1967-07-12
Publication of GB1075387A
publication
Critical
patent/GB1075387A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02367—Substrates
H01L21/0237—Materials
H01L21/02373—Group 14 semiconducting materials
H01L21/02381—Silicon, silicon germanium, germanium
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02518—Deposited layers
H01L21/02521—Materials
H01L21/02524—Group 14 semiconducting materials
H01L21/02532—Silicon, silicon germanium, germanium
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02612—Formation types
H01L21/02617—Deposition types
H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
H01L21/02639—Preparation of substrate for selective deposition
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Abstract
An epitaxial layer is produced on the exposed parts of a semi-conductor source masked with silicon dioxide by placing a source body of semi-conductor material in confronting relationship with the substrate and performing a transport reaction using iodine vapour. The process is performed in a reaction vessel (2, Fig. 1, not shown), in which a plurality of masked silicon substrates (32) rest on a support (22) which can be heated. Each substrate is surrounded by a quartz spacer (50, Fig. 3, not shown), which has apertures (52) to allow the entry of gases. A silicon source body (42), which may be of polycrystalline material, lies on top of each of the spacers (50). The apparatus is purged with argon and then evacuated. The substrates are heated to about 1100 DEG C., the source bodies being about 100 DEG C. cooler, and iodine vapour is admitted. Silicon is removed from the source bodies and epitaxially deposited on the exposed areas of the substrates. The heater is then de-energized, the iodine supply shut off, and the apparatus again purged with argon. The production of diodes and transistors by transport of doped layers is described (see Division H1). The semi-conductor material may also be germanium, indium antimonide, or gallium arsenide, and in the case of compounds an atmosphere of the more volatile component may be provided to help prevent decomposition of the semi-conductor compound.
GB2775565A
1964-07-27
1965-06-30
Improvements in semicuoductor device making
Expired
GB1075387A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US38526664A
1964-07-27
1964-07-27
Publications (1)
Publication Number
Publication Date
GB1075387A
true
GB1075387A
(en)
1967-07-12
Family
ID=23520702
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB2775565A
Expired
GB1075387A
(en)
1964-07-27
1965-06-30
Improvements in semicuoductor device making
Country Status (2)
Country
Link
DE
(1)
DE1544191B2
(en)
GB
(1)
GB1075387A
(en)
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3636919A
(en)
*
1969-12-02
1972-01-25
Univ Ohio State
Apparatus for growing films
US3959039A
(en)
*
1973-02-02
1976-05-25
U.S. Philips Corporation
Method of manufacturing vertical complementary bipolar transistors each with epitaxial base zones
US5134090A
(en)
*
1982-06-18
1992-07-28
At&T Bell Laboratories
Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
1965
1965-06-30
GB
GB2775565A
patent/GB1075387A/en
not_active
Expired
1965-07-24
DE
DE1965G0044259
patent/DE1544191B2/en
active
Granted
Cited By (3)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3636919A
(en)
*
1969-12-02
1972-01-25
Univ Ohio State
Apparatus for growing films
US3959039A
(en)
*
1973-02-02
1976-05-25
U.S. Philips Corporation
Method of manufacturing vertical complementary bipolar transistors each with epitaxial base zones
US5134090A
(en)
*
1982-06-18
1992-07-28
At&T Bell Laboratories
Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy
Also Published As
Publication number
Publication date
DE1544191B2
(en)
1975-12-04
DE1544191A1
(en)
1970-02-26
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None