GB1090696A – Improvements in or relating to semiconductor devices
– Google Patents
GB1090696A – Improvements in or relating to semiconductor devices
– Google Patents
Improvements in or relating to semiconductor devices
Info
Publication number
GB1090696A
GB1090696A
GB7612/66A
GB761266A
GB1090696A
GB 1090696 A
GB1090696 A
GB 1090696A
GB 7612/66 A
GB7612/66 A
GB 7612/66A
GB 761266 A
GB761266 A
GB 761266A
GB 1090696 A
GB1090696 A
GB 1090696A
Authority
GB
United Kingdom
Prior art keywords
gate
zones
feb
substrate
masking
Prior art date
1963-07-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7612/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-07-26
Filing date
1966-02-22
Publication date
1967-11-15
1966-02-22
Application filed by Individual
filed
Critical
Individual
1967-11-15
Publication of GB1090696A
publication
Critical
patent/GB1090696A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000004065
semiconductor
Substances
0.000
title
1
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
Boron
Chemical compound
[B]
ZOXJGFHDIHLPTG-UHFFFAOYSA-N
0.000
abstract
2
229910052796
boron
Inorganic materials
0.000
abstract
2
238000009792
diffusion process
Methods
0.000
abstract
2
230000000873
masking effect
Effects
0.000
abstract
2
230000002093
peripheral effect
Effects
0.000
abstract
2
239000000758
substrate
Substances
0.000
abstract
2
OAICVXFJPJFONN-UHFFFAOYSA-N
Phosphorus
Chemical compound
[P]
OAICVXFJPJFONN-UHFFFAOYSA-N
0.000
abstract
1
238000000034
method
Methods
0.000
abstract
1
229910052698
phosphorus
Inorganic materials
0.000
abstract
1
239000011574
phosphorus
Substances
0.000
abstract
1
229910052710
silicon
Inorganic materials
0.000
abstract
1
239000010703
silicon
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
H01L29/8083—Vertical transistors
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/00—Semiconductor device manufacturing: process
Y10S438/965—Shaped junction formation
Abstract
1,090,696. Unipolar transistors. S. TESZNER. Feb. 22, 1966 [Feb. 23, 1965], No. 7612/66. Addition to 1,045,314. Heading H1K. In a unipolar transistor with PN junction gate(s) the conduction channel sandwiched between gate regions is planar on one side and has longitudinal ridges of roughly triangular or trapezoidal form on the opposite side between planar sections. Such a device, shown in Fig. 4, is formed from a body of P-type silicon with an epitaxial N-type layer on one face by diffusing boron through oxide masking on the layer in two stages to provide a peripheral P zone 24 joined to the substrate and separated gate zones 23. These are subsequently connected at 25 by a further diffusion of boron into the surface between them. Phosphorus is finally diffused through apertures adjacent the end of the channel to provide source and drain contact areas. In an alternative method the apertures in the masking are disposed so close together that interconnected gate regions and triangular channels are formed in the diffusion step. A tetrode may be produced having the substrate as one gate and the diffused zones as the other by forming the peripheral zone 24 to the same depth as the gate zones.
GB7612/66A
1963-07-26
1966-02-22
Improvements in or relating to semiconductor devices
Expired
GB1090696A
(en)
Applications Claiming Priority (2)
Application Number
Priority Date
Filing Date
Title
FR942896A
FR1377330A
(en)
1963-07-26
1963-07-26
Enhancements to Integrated Multichannel Field Effect Semiconductor Devices
FR6722A
FR87873E
(en)
1963-07-26
1965-02-23
Enhancements to Integrated Multichannel Field Effect Semiconductor Devices
Publications (1)
Publication Number
Publication Date
GB1090696A
true
GB1090696A
(en)
1967-11-15
Family
ID=26162207
Family Applications (2)
Application Number
Title
Priority Date
Filing Date
GB30972/64A
Expired
GB1045314A
(en)
1963-07-26
1964-08-04
Improvements relating to semiconductor devices
GB7612/66A
Expired
GB1090696A
(en)
1963-07-26
1966-02-22
Improvements in or relating to semiconductor devices
Family Applications Before (1)
Application Number
Title
Priority Date
Filing Date
GB30972/64A
Expired
GB1045314A
(en)
1963-07-26
1964-08-04
Improvements relating to semiconductor devices
Country Status (6)
Country
Link
US
(2)
US3372316A
(en)
CH
(2)
CH414872A
(en)
DE
(2)
DE1293900B
(en)
FR
(2)
FR1377330A
(en)
GB
(2)
GB1045314A
(en)
NL
(2)
NL143734B
(en)
Families Citing this family (11)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
FR1377330A
(en)
*
1963-07-26
1964-11-06
Enhancements to Integrated Multichannel Field Effect Semiconductor Devices
US3430113A
(en)
*
1965-10-04
1969-02-25
Us Air Force
Current modulated field effect transistor
US3443172A
(en)
*
1965-11-16
1969-05-06
Monsanto Co
Low capacitance field effect transistor
IT981240B
(en)
*
1972-03-10
1974-10-10
Teszner S
IMPROVEMENTS TO THE GRIDISTORS FOR HYPERFREQUENCES
JPS5017771A
(en)
*
1973-06-15
1975-02-25
US4670764A
(en)
*
1984-06-08
1987-06-02
Eaton Corporation
Multi-channel power JFET with buried field shaping regions
US4633281A
(en)
*
1984-06-08
1986-12-30
Eaton Corporation
Dual stack power JFET with buried field shaping depletion regions
EP0167810A1
(en)
*
1984-06-08
1986-01-15
Eaton Corporation
Power JFET with plural lateral pinching
US4635084A
(en)
*
1984-06-08
1987-01-06
Eaton Corporation
Split row power JFET
US4959697A
(en)
*
1988-07-20
1990-09-25
Vtc Incorporated
Short channel junction field effect transistor
JP2713205B2
(en)
*
1995-02-21
1998-02-16
日本電気株式会社
Semiconductor device
Family Cites Families (7)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE1080696B
(en)
*
1956-12-10
1960-04-28
Stanislas Teszner
Transistor, in particular unipolar transistor, with a flat semiconductor body and semiconducting, cylindrical teeth on its surface and method for its manufacture
FR1210880A
(en)
*
1958-08-29
1960-03-11
Improvements to field-effect transistors
GB912114A
(en)
*
1960-09-26
1962-12-05
Westinghouse Electric Corp
Semiconductor devices
FR1317256A
(en)
*
1961-12-16
1963-02-08
Teszner Stanislas
Improvements to semiconductor devices known as multibrand tecnetrons
FR1329626A
(en)
*
1962-04-04
1963-06-14
Europ Des Semi Conducteurs Soc
High performance field effect transistors
US3268374A
(en)
*
1963-04-24
1966-08-23
Texas Instruments Inc
Method of producing a field-effect transistor
FR1377330A
(en)
*
1963-07-26
1964-11-06
Enhancements to Integrated Multichannel Field Effect Semiconductor Devices
1963
1963-07-26
FR
FR942896A
patent/FR1377330A/en
not_active
Expired
1964
1964-07-23
DE
DET26654A
patent/DE1293900B/en
not_active
Withdrawn
1964-07-23
NL
NL646408428A
patent/NL143734B/en
unknown
1964-07-24
CH
CH970464A
patent/CH414872A/en
unknown
1964-07-24
US
US385023A
patent/US3372316A/en
not_active
Expired – Lifetime
1964-08-04
GB
GB30972/64A
patent/GB1045314A/en
not_active
Expired
1965
1965-02-23
FR
FR6722A
patent/FR87873E/en
not_active
Expired
1966
1966-02-17
CH
CH231666A
patent/CH429953A/en
unknown
1966-02-21
US
US528896A
patent/US3407342A/en
not_active
Expired – Lifetime
1966-02-22
GB
GB7612/66A
patent/GB1090696A/en
not_active
Expired
1966-02-23
DE
DE1514932A
patent/DE1514932C3/en
not_active
Expired
1966-02-23
NL
NL666602337A
patent/NL152119B/en
unknown
Also Published As
Publication number
Publication date
DE1514932A1
(en)
1969-09-11
GB1045314A
(en)
1966-10-12
US3407342A
(en)
1968-10-22
DE1293900B
(en)
1969-04-30
CH414872A
(en)
1966-06-15
FR1377330A
(en)
1964-11-06
NL143734B
(en)
1974-10-15
DE1514932B2
(en)
1974-06-12
NL6602337A
(en)
1966-08-24
CH429953A
(en)
1967-02-15
FR87873E
(en)
1966-07-08
US3372316A
(en)
1968-03-05
DE1514932C3
(en)
1975-01-30
NL152119B
(en)
1977-01-17
NL6408428A
(en)
1965-01-27
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None