GB1091508A – Improvements in or relating to thin film transistors
– Google Patents
GB1091508A – Improvements in or relating to thin film transistors
– Google Patents
Improvements in or relating to thin film transistors
Info
Publication number
GB1091508A
GB1091508A
GB52459/64A
GB5245964A
GB1091508A
GB 1091508 A
GB1091508 A
GB 1091508A
GB 52459/64 A
GB52459/64 A
GB 52459/64A
GB 5245964 A
GB5245964 A
GB 5245964A
GB 1091508 A
GB1091508 A
GB 1091508A
Authority
GB
United Kingdom
Prior art keywords
dec
conductor
varying
field effect
vapour
Prior art date
1963-12-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52459/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-12-26
Filing date
1964-12-24
Publication date
1967-11-15
1964-12-24
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1967-11-15
Publication of GB1091508A
publication
Critical
patent/GB1091508A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
239000010409
thin film
Substances
0.000
title
1
CJOBVZJTOIVNNF-UHFFFAOYSA-N
cadmium sulfide
Chemical compound
[Cd]=S
CJOBVZJTOIVNNF-UHFFFAOYSA-N
0.000
abstract
2
229910052980
cadmium sulfide
Inorganic materials
0.000
abstract
2
230000005669
field effect
Effects
0.000
abstract
2
239000000463
material
Substances
0.000
abstract
2
239000004065
semiconductor
Substances
0.000
abstract
2
LIVNPJMFVYWSIS-UHFFFAOYSA-N
silicon monoxide
Chemical compound
[Si-]#[O+]
LIVNPJMFVYWSIS-UHFFFAOYSA-N
0.000
abstract
2
QVGXLLKOCUKJST-UHFFFAOYSA-N
atomic oxygen
Chemical compound
[O]
QVGXLLKOCUKJST-UHFFFAOYSA-N
0.000
abstract
1
230000015572
biosynthetic process
Effects
0.000
abstract
1
WUKWITHWXAAZEY-UHFFFAOYSA-L
calcium difluoride
Chemical compound
[F-].[F-].[Ca+2]
WUKWITHWXAAZEY-UHFFFAOYSA-L
0.000
abstract
1
229910001634
calcium fluoride
Inorganic materials
0.000
abstract
1
239000000969
carrier
Substances
0.000
abstract
1
230000008021
deposition
Effects
0.000
abstract
1
230000005684
electric field
Effects
0.000
abstract
1
PCHJSUWPFVWCPO-UHFFFAOYSA-N
gold
Chemical compound
[Au]
PCHJSUWPFVWCPO-UHFFFAOYSA-N
0.000
abstract
1
239000010931
gold
Substances
0.000
abstract
1
229910052737
gold
Inorganic materials
0.000
abstract
1
239000012535
impurity
Substances
0.000
abstract
1
XCAUINMIESBTBL-UHFFFAOYSA-N
lead(ii) sulfide
Chemical compound
[Pb]=S
XCAUINMIESBTBL-UHFFFAOYSA-N
0.000
abstract
1
229910052760
oxygen
Inorganic materials
0.000
abstract
1
239000001301
oxygen
Substances
0.000
abstract
1
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
H01L29/76—Unipolar devices, e.g. field effect transistors
H01L29/772—Field effect transistors
H01L29/78—Field effect transistors with field effect produced by an insulated gate
H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L23/00—Details of semiconductor or other solid state devices
H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
H01L2924/0001—Technical content checked by a classifier
H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
1,091,508. Field effect transistors. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 24, 1964 [Dec. 26, 1963], No. 52459/64. Heading H1K. In an insulated gate field effect transistor the source-drain current path consists of two superposed layers, the one nearest the gate electrode having a higher conductivity than the other and a thickness no greater than the Debye length, i.e. the depth to which electrical fields are effective to modulate the majority carrier density. The higher conductivity layer is so doped that the surface and volume traps are completely filled so that all field induced majority carriers are mobile. The superposed layers may be of the same semi-conductor, e.g. cadmium sulphide or lead sulphide of N or P type or of a different semi-conductor. In the embodiments, vapour deposited cadmium sulphide is used, the different conductivities being provided by varying the degree of non- stoichiometry, by varying the pressure of oxygen vapour in the deposition chamber or by introducing different amounts of a compensating impurity (e.g. a group Ib element for N-type material or a Va element for P-type material) either after or during formation of the layers as described in Specification 1,087,821. The electrodes of gold, and the insulating layer of silicon monoxide or calcium fluoride are also vapour deposited through masks as described in that Specification.
GB52459/64A
1963-12-26
1964-12-24
Improvements in or relating to thin film transistors
Expired
GB1091508A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
US333443A
US3289054A
(en)
1963-12-26
1963-12-26
Thin film transistor and method of fabrication
Publications (1)
Publication Number
Publication Date
GB1091508A
true
GB1091508A
(en)
1967-11-15
Family
ID=23302804
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB52459/64A
Expired
GB1091508A
(en)
1963-12-26
1964-12-24
Improvements in or relating to thin film transistors
Country Status (2)
Country
Link
US
(1)
US3289054A
(en)
GB
(1)
GB1091508A
(en)
Families Citing this family (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US4040073A
(en)
*
1975-08-29
1977-08-02
Westinghouse Electric Corporation
Thin film transistor and display panel using the transistor
US4422090A
(en)
*
1979-07-25
1983-12-20
Northern Telecom Limited
Thin film transistors
US4459739A
(en)
*
1981-05-26
1984-07-17
Northern Telecom Limited
Thin film transistors
US5308996A
(en)
*
1986-09-25
1994-05-03
Canon Kabushiki Kaisha
TFT device
Family Cites Families (8)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3010033A
(en)
*
1958-01-02
1961-11-21
Clevite Corp
Field effect transistor
US2985805A
(en)
*
1958-03-05
1961-05-23
Rca Corp
Semiconductor devices
US3148284A
(en)
*
1959-01-30
1964-09-08
Zenith Radio Corp
Semi-conductor apparatus with field-biasing means
NL252543A
(en)
*
1959-06-12
US3178798A
(en)
*
1962-05-09
1965-04-20
Ibm
Vapor deposition process wherein the vapor contains both donor and acceptor impurities
BE632998A
(en)
*
1962-05-31
US3183576A
(en)
*
1962-06-26
1965-05-18
Ibm
Method of making transistor structures
US3217215A
(en)
*
1963-07-05
1965-11-09
Int Rectifier Corp
Field effect transistor
1963
1963-12-26
US
US333443A
patent/US3289054A/en
not_active
Expired – Lifetime
1964
1964-12-24
GB
GB52459/64A
patent/GB1091508A/en
not_active
Expired
Also Published As
Publication number
Publication date
US3289054A
(en)
1966-11-29
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