GB1101909A

GB1101909A – Method for producing gallium arsenide devices
– Google Patents

GB1101909A – Method for producing gallium arsenide devices
– Google Patents
Method for producing gallium arsenide devices

Info

Publication number
GB1101909A

GB1101909A
GB1852/67A
GB185267A
GB1101909A
GB 1101909 A
GB1101909 A
GB 1101909A
GB 1852/67 A
GB1852/67 A
GB 1852/67A
GB 185267 A
GB185267 A
GB 185267A
GB 1101909 A
GB1101909 A
GB 1101909A
Authority
GB
United Kingdom
Prior art keywords
layer
silicon
doped
gallium arsenide
silica
Prior art date
1967-01-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB1852/67A
Inventor
George Richard Antell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STC PLC

Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1967-01-13
Filing date
1967-01-13
Publication date
1968-02-07

1967-01-13
Application filed by Standard Telephone and Cables PLC
filed
Critical
Standard Telephone and Cables PLC

1967-01-13
Priority to GB1852/67A
priority
Critical
patent/GB1101909A/en

1968-01-11
Priority to DED55084A
priority
patent/DE1283398B/en

1968-01-12
Priority to NL6800480A
priority
patent/NL6800480A/xx

1968-01-12
Priority to US697480A
priority
patent/US3530015A/en

1968-01-12
Priority to FR1550850D
priority
patent/FR1550850A/fr

1968-02-07
Publication of GB1101909A
publication
Critical
patent/GB1101909A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

JBRZTFJDHDCESZ-UHFFFAOYSA-N
AsGa
Chemical compound

[As]#[Ga]
JBRZTFJDHDCESZ-UHFFFAOYSA-N
0.000
title
abstract
7

229910001218
Gallium arsenide
Inorganic materials

0.000
title
abstract
7

238000004519
manufacturing process
Methods

0.000
title
1

XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound

[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
9

229910052710
silicon
Inorganic materials

0.000
abstract
9

239000010703
silicon
Substances

0.000
abstract
9

VYPSYNLAJGMNEJ-UHFFFAOYSA-N
Silicium dioxide
Chemical compound

O=[Si]=O
VYPSYNLAJGMNEJ-UHFFFAOYSA-N
0.000
abstract
8

239000012535
impurity
Substances

0.000
abstract
4

239000000377
silicon dioxide
Substances

0.000
abstract
4

229910052725
zinc
Inorganic materials

0.000
abstract
3

229910052785
arsenic
Inorganic materials

0.000
abstract
2

229910052787
antimony
Inorganic materials

0.000
abstract
1

RQNWIZPPADIBDY-UHFFFAOYSA-N
arsenic atom
Chemical compound

[As]
RQNWIZPPADIBDY-UHFFFAOYSA-N
0.000
abstract
1

QVGXLLKOCUKJST-UHFFFAOYSA-N
atomic oxygen
Chemical compound

[O]
QVGXLLKOCUKJST-UHFFFAOYSA-N
0.000
abstract
1

230000004888
barrier function
Effects

0.000
abstract
1

229910052790
beryllium
Inorganic materials

0.000
abstract
1

229910052793
cadmium
Inorganic materials

0.000
abstract
1

238000000151
deposition
Methods

0.000
abstract
1

238000009792
diffusion process
Methods

0.000
abstract
1

238000010438
heat treatment
Methods

0.000
abstract
1

229910052748
manganese
Inorganic materials

0.000
abstract
1

238000000034
method
Methods

0.000
abstract
1

229910052760
oxygen
Inorganic materials

0.000
abstract
1

239000001301
oxygen
Substances

0.000
abstract
1

229910052698
phosphorus
Inorganic materials

0.000
abstract
1

239000004065
semiconductor
Substances

0.000
abstract
1

238000004544
sputter deposition
Methods

0.000
abstract
1

239000000758
substrate
Substances

0.000
abstract
1

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L23/00—Details of semiconductor or other solid state devices

H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection

H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon

H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

H01L21/2258—Diffusion into or out of AIIIBV compounds

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

H01L2924/0001—Technical content checked by a classifier

H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/02—Contacts, special

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/106—Masks, special

Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC

Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

Y10S148/00—Metal treatment

Y10S148/122—Polycrystalline

Abstract

1,101,909. Making GaAs devices. STANDARD TELEPHONES & CABLES Ltd. 13 Jan., 1967, No. 1852/67. Heading HlK. A gallium arsenide semi-conductor device is made by depositing on the surface of a gallium arsenide body, a silicon layer doped with an acceptor impurity or a donor impurity other than silicon, and heating in an arsenic-free atmosphere to diffuse the impurity into the surface. The layer of silicon acts as a barrier to prevent oxygen diffusion. An epitaxial layer 31 of N-type GaAs is grown on a substrate 32 of N+ -type GaAs and covered with a silica layer (33, Figs. 3b and 3c, not shown) provided with a window therein. A layer (34) of Zn or Mg doped Si is deposited by sputtering over the oxide film and the window and then heated to give a diffused P-type base region (35). The silica and silicon layers are replaced by another silica layer 36 having a window therein for an emitter region. A pure layer of silicon (37, Figs. 3d and 3e, not shown) is deposited over the silica and the structure heated in an arsenic atmosphere to give a diffused N-type emitter region 38. The silicon in contact with the gallium arsenide recrystallizes and an N+-type contact is formed on the emitter region. Alternatively the silicon layer (37) may be doped with As, Sb or P. The silicon layer is partially removed to leave an emitter contact 39. Ohmic contacts 40, 41 and 42 are provided for the device. The silicon layer containing Zn and Mg may be replaced by one containing Be, Cd or Mn, whilst the donor impurity may be Sn. Using similar techniques, a mesa or planar diode may be formed (Figs. la to Id and 2a to 2d, respectively, not shown) which may be suitable for varactor or avalanche oscillators. A plurality of devices may be formed in one slice and subsequently divided. The doped Si layer may be deposited by R.F. electric discharge in a low pressure atmosphere of SiH 4 and Zn or Mg vapour.

GB1852/67A
1967-01-13
1967-01-13
Method for producing gallium arsenide devices

Expired

GB1101909A
(en)

Priority Applications (5)

Application Number
Priority Date
Filing Date
Title

GB1852/67A

GB1101909A
(en)

1967-01-13
1967-01-13
Method for producing gallium arsenide devices

DED55084A

DE1283398B
(en)

1967-01-13
1968-01-11

Diffusion process for the production of a semiconductor component with a semiconductor body made of gallium arsenide

NL6800480A

NL6800480A
(en)

1967-01-13
1968-01-12

US697480A

US3530015A
(en)

1967-01-13
1968-01-12
Method of producing gallium arsenide devices

FR1550850D

FR1550850A
(en)

1967-01-13
1968-01-12

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

GB1852/67A

GB1101909A
(en)

1967-01-13
1967-01-13
Method for producing gallium arsenide devices

Publications (1)

Publication Number
Publication Date

GB1101909A
true

GB1101909A
(en)

1968-02-07

Family
ID=9729139
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB1852/67A
Expired

GB1101909A
(en)

1967-01-13
1967-01-13
Method for producing gallium arsenide devices

Country Status (5)

Country
Link

US
(1)

US3530015A
(en)

DE
(1)

DE1283398B
(en)

FR
(1)

FR1550850A
(en)

GB
(1)

GB1101909A
(en)

NL
(1)

NL6800480A
(en)

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

GB2167230A
(en)

*

1984-11-15
1986-05-21
Stc Plc
Semiconductor processing

Families Citing this family (5)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

NL7013226A
(en)

*

1970-09-08
1972-03-10
Philips Nv

US3768151A
(en)

*

1970-11-03
1973-10-30
Ibm
Method of forming ohmic contacts to semiconductors

NL8403017A
(en)

*

1984-10-04
1986-05-01
Philips Nv

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE depositing a MG Doped EPITAXIAL COAT on a SEMICONDUCTOR BODY.

US4830983A
(en)

*

1987-11-05
1989-05-16
Xerox Corporation
Method of enhanced introduction of impurity species into a semiconductor structure from a deposited source and application thereof

US5188978A
(en)

*

1990-03-02
1993-02-23
International Business Machines Corporation
Controlled silicon doping of III-V compounds by thermal oxidation of silicon capping layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE966906C
(en)

*

1953-04-09
1957-09-19
Siemens Ag

Method for non-blocking contacting of surface rectifiers or transistors with a semiconductor single crystal having a p-n layer

NL275313A
(en)

*

1961-05-10

FR1347297A
(en)

*

1961-12-18
1963-12-27
Ibm

Semiconductor device and manufacturing method

US3406049A
(en)

*

1965-04-28
1968-10-15
Ibm
Epitaxial semiconductor layer as a diffusion mask

1967

1967-01-13
GB
GB1852/67A
patent/GB1101909A/en
not_active
Expired

1968

1968-01-11
DE
DED55084A
patent/DE1283398B/en
active
Pending

1968-01-12
US
US697480A
patent/US3530015A/en
not_active
Expired – Lifetime

1968-01-12
NL
NL6800480A
patent/NL6800480A/xx
unknown

1968-01-12
FR
FR1550850D
patent/FR1550850A/fr
not_active
Expired

Cited By (1)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

GB2167230A
(en)

*

1984-11-15
1986-05-21
Stc Plc
Semiconductor processing

Also Published As

Publication number
Publication date

DE1283398B
(en)

1968-11-21

FR1550850A
(en)

1968-12-20

US3530015A
(en)

1970-09-22

NL6800480A
(en)

1968-07-15

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