GB1105314A

GB1105314A – Improvements in and relating to semiconductor devices
– Google Patents

GB1105314A – Improvements in and relating to semiconductor devices
– Google Patents
Improvements in and relating to semiconductor devices

Info

Publication number
GB1105314A

GB1105314A
GB50672/63A
GB5067263A
GB1105314A
GB 1105314 A
GB1105314 A
GB 1105314A
GB 50672/63 A
GB50672/63 A
GB 50672/63A
GB 5067263 A
GB5067263 A
GB 5067263A
GB 1105314 A
GB1105314 A
GB 1105314A
Authority
GB
United Kingdom
Prior art keywords
manganese
arsenide
region
bismuth
gallium
Prior art date
1963-12-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Application number
GB50672/63A
Inventor
John Robert Dale
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Philips Components Ltd

Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1963-12-23
Filing date
1963-12-23
Publication date
1968-03-06

1963-12-23
Application filed by Mullard Ltd
filed
Critical
Mullard Ltd

1963-12-23
Priority to GB50672/63A
priority
Critical
patent/GB1105314A/en

1964-12-18
Priority to CH1637864A
priority
patent/CH468718A/en

1964-12-18
Priority to NL6414781A
priority
patent/NL6414781A/xx

1964-12-19
Priority to DE1489194A
priority
patent/DE1489194C3/en

1964-12-21
Priority to JP7168564A
priority
patent/JPS42338B1/ja

1964-12-21
Priority to SE15490/64A
priority
patent/SE313118B/xx

1964-12-21
Priority to AT1078564A
priority
patent/AT258370B/en

1964-12-22
Priority to US420287A
priority
patent/US3357870A/en

1964-12-23
Priority to FR999785A
priority
patent/FR1418641A/en

1964-12-23
Priority to BE657564A
priority
patent/BE657564A/xx

1968-03-06
Publication of GB1105314A
publication
Critical
patent/GB1105314A/en

Status
Expired
legal-status
Critical
Current

Links

Espacenet

Global Dossier

Discuss

239000004065
semiconductor
Substances

0.000
title
abstract
3

239000011572
manganese
Substances

0.000
abstract
8

JBRZTFJDHDCESZ-UHFFFAOYSA-N
AsGa
Chemical compound

[As]#[Ga]
JBRZTFJDHDCESZ-UHFFFAOYSA-N
0.000
abstract
6

229910001218
Gallium arsenide
Inorganic materials

0.000
abstract
6

NYOGMBUMDPBEJK-UHFFFAOYSA-N
arsanylidynemanganese
Chemical compound

[As]#[Mn]
NYOGMBUMDPBEJK-UHFFFAOYSA-N
0.000
abstract
6

229910052797
bismuth
Inorganic materials

0.000
abstract
6

JCXGWMGPZLAOME-UHFFFAOYSA-N
bismuth atom
Chemical compound

[Bi]
JCXGWMGPZLAOME-UHFFFAOYSA-N
0.000
abstract
6

PWHULOQIROXLJO-UHFFFAOYSA-N
Manganese
Chemical compound

[Mn]
PWHULOQIROXLJO-UHFFFAOYSA-N
0.000
abstract
5

229910052748
manganese
Inorganic materials

0.000
abstract
5

239000008188
pellet
Substances

0.000
abstract
5

239000000463
material
Substances

0.000
abstract
4

BASFCYQUMIYNBI-UHFFFAOYSA-N
platinum
Chemical compound

[Pt]
BASFCYQUMIYNBI-UHFFFAOYSA-N
0.000
abstract
4

OKKJLVBELUTLKV-UHFFFAOYSA-N
Methanol
Chemical compound

OC
OKKJLVBELUTLKV-UHFFFAOYSA-N
0.000
abstract
3

IJGRMHOSHXDMSA-UHFFFAOYSA-N
Atomic nitrogen
Chemical compound

N#N
IJGRMHOSHXDMSA-UHFFFAOYSA-N
0.000
abstract
2

GYHNNYVSQQEPJS-UHFFFAOYSA-N
Gallium
Chemical compound

[Ga]
GYHNNYVSQQEPJS-UHFFFAOYSA-N
0.000
abstract
2

229910000673
Indium arsenide
Inorganic materials

0.000
abstract
2

ATJFFYVFTNAWJD-UHFFFAOYSA-N
Tin
Chemical compound

[Sn]
ATJFFYVFTNAWJD-UHFFFAOYSA-N
0.000
abstract
2

238000005275
alloying
Methods

0.000
abstract
2

150000001875
compounds
Chemical class

0.000
abstract
2

229910052733
gallium
Inorganic materials

0.000
abstract
2

RPQDHPTXJYYUPQ-UHFFFAOYSA-N
indium arsenide
Chemical compound

[In]#[As]
RPQDHPTXJYYUPQ-UHFFFAOYSA-N
0.000
abstract
2

229910052697
platinum
Inorganic materials

0.000
abstract
2

239000000758
substrate
Substances

0.000
abstract
2

229910052718
tin
Inorganic materials

0.000
abstract
2

WKBOTKDWSSQWDR-UHFFFAOYSA-N
Bromine atom
Chemical compound

[Br]
WKBOTKDWSSQWDR-UHFFFAOYSA-N
0.000
abstract
1

OKTJSMMVPCPJKN-UHFFFAOYSA-N
Carbon
Chemical compound

[C]
OKTJSMMVPCPJKN-UHFFFAOYSA-N
0.000
abstract
1

XUIMIQQOPSSXEZ-UHFFFAOYSA-N
Silicon
Chemical compound

[Si]
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
0.000
abstract
1

230000015572
biosynthetic process
Effects

0.000
abstract
1

GDTBXPJZTBHREO-UHFFFAOYSA-N
bromine
Substances

BrBr
GDTBXPJZTBHREO-UHFFFAOYSA-N
0.000
abstract
1

229910052794
bromium
Inorganic materials

0.000
abstract
1

229910052799
carbon
Inorganic materials

0.000
abstract
1

239000012876
carrier material
Substances

0.000
abstract
1

230000015556
catabolic process
Effects

0.000
abstract
1

239000013078
crystal
Substances

0.000
abstract
1

230000008021
deposition
Effects

0.000
abstract
1

239000007788
liquid
Substances

0.000
abstract
1

WPBNNNQJVZRUHP-UHFFFAOYSA-L
manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate
Chemical compound

[Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC
WPBNNNQJVZRUHP-UHFFFAOYSA-L
0.000
abstract
1

238000004519
manufacturing process
Methods

0.000
abstract
1

238000000034
method
Methods

0.000
abstract
1

229910052757
nitrogen
Inorganic materials

0.000
abstract
1

230000005693
optoelectronics
Effects

0.000
abstract
1

229910052710
silicon
Inorganic materials

0.000
abstract
1

239000010703
silicon
Substances

0.000
abstract
1

Classifications

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

C30B19/00—Liquid-phase epitaxial-layer growth

C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux

C—CHEMISTRY; METALLURGY

C30—CRYSTAL GROWTH

C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR

C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

C30B29/10—Inorganic compounds or compositions

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer

H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials

H01L21/185—Joining of semiconductor bodies for junction formation

H—ELECTRICITY

H01—ELECTRIC ELEMENTS

H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10

H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Abstract

1,105,314. Semi-conductor devices. MULLARD Ltd. 19 Nov., 1964 [23 Dec., 1963], No. 50672/63. Heading H1K. A semi-conductor device contains a junction between a region of a single or mixed crystal AIIIBV compound and a region of a manganese arsenide having a composition in the range Mn 1 . 9 As to Mn 2 . 3 As. During the formation of the junction it is possible that one or more very thin intermediate layers of further compounds (e.g. Mn 3 As 2 ) or of material having different electrical properties or different crystalline structure may be formed between the two regions. Such layers if present have a total maximum thickness of the order of 1 Á. Junctions may be made having the characteristics of PN, PP, or NN junctions. They are incorporated in devices such as high-speed switching diodes, tunnel diodes, or especially in photo diodes and in opto-electronic transistors in which they form the collector-base junction. Each of the three embodiments specifically described is a photo-cell. In the embodiment of Fig. 1 a tellurium-doped wafer 1 of gallium arsenide is placed in a carbon jig and has a pellet containing 80% bismuth (as a carrier material) and 20% manganese prewetted to one face at 450 C. Two pellets containing 54% bismuth, 44% tin, and 20% platinum are prewetted at 450 C. to the opposite face. The pellets are alloyed for 1 hour at 500 C. in an evacuated silicon tube and then cooled over a period of 4 hours. A resolidified region 4 consists of bismuth with a little manganese and gallium and constitutes an ohmic contact to a recrystallized region 3 containing manganese arsenide. Ohmic contact is made to the gallium arsenide wafer by resolidified regions 6 (which contain the original elements and a little gallium arsenide) and their underlying recrystallized regions 5 which contain gallium arsenide, bismuth, tin, and lead. Platinum wires are soldered to the contacts. The device is then lightly etched with 30% solution of bromine in methanol, and encapsulated. The manufacture of the second embodiment is generally similar. Here the material alloyed to form the heterojunction consists of a pellet containing 75% bismuth, 10% manganese, and 15% indium arsenide which is prewetted to the body together with a chip of manganese sufficient to make the manganese content of the material alloyed up to 25%. The resolidified region after alloying contains bismuth, indium arsenide, and gallium, and overlies a doped region of manganese arsenide. The third embodiment is generally similar to the second but has all contacts on the same surface. In this case no additional manganese is added to the pellet alloyed to form the heterojunction. In the specific embodiments the heterojunction is formed on a (100) face of gallium arsenide. With the conditions given it is found that there is a lattice mismatch of less than 5% between the (100) plane of gallium arsenide and the (001) plane of the manganese arsenide. Electrical parameters of the three diodes are given including for one of them values of the breakdown voltage at room temperature and at liquid nitrogen temperature. Junctions may also be formed by vapour deposition of manganese arsenide on an AIIIBV substrate or vice versa. Other alloying methods are outlined including some in which the region of AIIIBV material is formed on a manganese arsenide substrate.

GB50672/63A
1963-12-23
1963-12-23
Improvements in and relating to semiconductor devices

Expired

GB1105314A
(en)

Priority Applications (10)

Application Number
Priority Date
Filing Date
Title

GB50672/63A

GB1105314A
(en)

1963-12-23
1963-12-23
Improvements in and relating to semiconductor devices

CH1637864A

CH468718A
(en)

1963-12-23
1964-12-18

Semiconductor device and method of manufacturing the same

NL6414781A

NL6414781A
(en)

1963-12-23
1964-12-18

DE1489194A

DE1489194C3
(en)

1963-12-23
1964-12-19

Semiconductor component

JP7168564A

JPS42338B1
(en)

1963-12-23
1964-12-21

SE15490/64A

SE313118B
(en)

1963-12-23
1964-12-21

AT1078564A

AT258370B
(en)

1963-12-23
1964-12-21

Semiconductor device, especially photodiode or opto-electronic transistor

US420287A

US3357870A
(en)

1963-12-23
1964-12-22
Semiconductor device

FR999785A

FR1418641A
(en)

1963-12-23
1964-12-23

Semiconductor device

BE657564A

BE657564A
(en)

1963-12-23
1964-12-23

Applications Claiming Priority (1)

Application Number
Priority Date
Filing Date
Title

GB50672/63A

GB1105314A
(en)

1963-12-23
1963-12-23
Improvements in and relating to semiconductor devices

Publications (1)

Publication Number
Publication Date

GB1105314A
true

GB1105314A
(en)

1968-03-06

Family
ID=10456884
Family Applications (1)

Application Number
Title
Priority Date
Filing Date

GB50672/63A
Expired

GB1105314A
(en)

1963-12-23
1963-12-23
Improvements in and relating to semiconductor devices

Country Status (7)

Country
Link

US
(1)

US3357870A
(en)

AT
(1)

AT258370B
(en)

BE
(1)

BE657564A
(en)

CH
(1)

CH468718A
(en)

DE
(1)

DE1489194C3
(en)

GB
(1)

GB1105314A
(en)

NL
(1)

NL6414781A
(en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party

Publication number
Priority date
Publication date
Assignee
Title

DE970420C
(en)

*

1951-03-10
1958-09-18
Siemens Ag

Semiconductor electrical equipment

US2847335A
(en)

*

1953-09-15
1958-08-12
Siemens Ag
Semiconductor devices and method of manufacturing them

NL245567A
(en)

*

1958-11-20

1963

1963-12-23
GB
GB50672/63A
patent/GB1105314A/en
not_active
Expired

1964

1964-12-18
CH
CH1637864A
patent/CH468718A/en
unknown

1964-12-18
NL
NL6414781A
patent/NL6414781A/xx
unknown

1964-12-19
DE
DE1489194A
patent/DE1489194C3/en
not_active
Expired

1964-12-21
AT
AT1078564A
patent/AT258370B/en
active

1964-12-22
US
US420287A
patent/US3357870A/en
not_active
Expired – Lifetime

1964-12-23
BE
BE657564A
patent/BE657564A/xx
unknown

Also Published As

Publication number
Publication date

NL6414781A
(en)

1965-06-24

US3357870A
(en)

1967-12-12

CH468718A
(en)

1969-02-15

DE1489194C3
(en)

1973-11-29

DE1489194B2
(en)

1973-04-26

BE657564A
(en)

1965-06-23

DE1489194A1
(en)

1969-05-08

AT258370B
(en)

1967-11-27

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