GB1107313A – Electronic switching circuit
– Google Patents
GB1107313A – Electronic switching circuit
– Google Patents
Electronic switching circuit
Info
Publication number
GB1107313A
GB1107313A
GB8580/67A
GB858067A
GB1107313A
GB 1107313 A
GB1107313 A
GB 1107313A
GB 8580/67 A
GB8580/67 A
GB 8580/67A
GB 858067 A
GB858067 A
GB 858067A
GB 1107313 A
GB1107313 A
GB 1107313A
Authority
GB
United Kingdom
Prior art keywords
transistors
source
gates
diode
resistor
Prior art date
1966-07-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8580/67A
Inventor
Gerald Owen Huth
Raymond Andrew Schulz
Arden John Wolterman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1966-07-25
Filing date
1967-02-22
Publication date
1968-03-27
1967-02-22
Application filed by International Business Machines Corp
filed
Critical
International Business Machines Corp
1968-03-27
Publication of GB1107313A
publication
Critical
patent/GB1107313A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
H03K17/04—Modifications for accelerating switching
H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
H—ELECTRICITY
H03—ELECTRONIC CIRCUITRY
H03K—PULSE TECHNIQUE
H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
H03K17/04—Modifications for accelerating switching
Abstract
1,107,313. Transistor gating circuits. INTERNATIONAL BUSINESS MACHINES CORPORATION. 22 Feb., 1967 [25 July, 1966], No. 8580/67. Heading H3T. A gating circuit comprises two field effect transistors connected in series between input and output terminals with their source electrodes together, a first diode 16 connected to a source of supply, a resistive element 14 connected between the source terminals and a common connection to the gates and a twolevel control signal connected through a second diode 18 to the common connection. When the control voltage in the circuit shown is at its lower level both diodes conduct, the sources are clamped at Va and the gates have a cut-off bias applied to them. Both transistors are in the most favourable blocking direction. When the control voltage is at its higher level both diodes are blocked and the bias is removed so that the transistors may conduct. The control source is isolated by the diode and resistor 14 provides a bleed path for negative charge accumulating at the gates. This resistor may be replaced by a further field effect transistor arranged to have a high constant current type resistance when the main transistors are off and a low resistance when they are on so as to increase switching speeds.
GB8580/67A
1966-07-25
1967-02-22
Electronic switching circuit
Expired
GB1107313A
(en)
Applications Claiming Priority (3)
Application Number
Priority Date
Filing Date
Title
CA810796T
US56745366A
1966-07-25
1966-07-25
JP42013965A
JPS4824649B1
(en)
1966-07-25
1967-03-07
Publications (1)
Publication Number
Publication Date
GB1107313A
true
GB1107313A
(en)
1968-03-27
Family
ID=73131601
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB8580/67A
Expired
GB1107313A
(en)
1966-07-25
1967-02-22
Electronic switching circuit
Country Status (6)
Country
Link
US
(1)
US3532899A
(en)
JP
(1)
JPS4824649B1
(en)
CA
(1)
CA810796A
(en)
DE
(1)
DE1283891B
(en)
FR
(1)
FR1513077A
(en)
GB
(1)
GB1107313A
(en)
Families Citing this family (24)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE2123395C3
(en)
*
1971-05-12
1983-03-10
TE KA DE Felten & Guilleaume Fernmeldeanlagen GmbH, 8500 Nürnberg
Coupling point of an electronic switching matrix device with field effect transistors
US3703650A
(en)
*
1971-09-16
1972-11-21
Signetics Corp
Integrated circuit with temperature compensation for a field effect transistor
US3731116A
(en)
*
1972-03-02
1973-05-01
Us Navy
High frequency field effect transistor switch
JPS5010545A
(en)
*
1973-05-24
1975-02-03
US4303831A
(en)
*
1979-07-30
1981-12-01
Bell Telephone Laboratories, Incorporated
Optically triggered linear bilateral switch
US4477742A
(en)
*
1982-06-21
1984-10-16
Eaton Corporation
Three terminal bidirectional drain to drain FET circuit
US4500802A
(en)
*
1982-06-21
1985-02-19
Eaton Corporation
Three terminal bidirectional source to source FET circuit
US4491750A
(en)
*
1982-09-28
1985-01-01
Eaton Corporation
Bidirectionally source stacked FETs with drain-referenced common gating
JPS5981920A
(en)
*
1982-11-02
1984-05-11
Fujitsu Ltd
Analog switch circuit
US4595847A
(en)
*
1983-10-20
1986-06-17
Telmos, Inc.
Bi-directional high voltage analog switch having source to source connected field effect transistors
US4942312A
(en)
*
1985-08-19
1990-07-17
Eastman Kodak Company
Integrated-circuit having two NMOS depletion mode transistors for producing stable DC voltage
US4672246A
(en)
*
1986-03-10
1987-06-09
Honeywell Inc.
Low offset MOSFET transistor switch control
US4719374A
(en)
*
1986-04-11
1988-01-12
Ampex Corporation
Broadband electric field controlled switching circuit
US4682061A
(en)
*
1986-05-01
1987-07-21
Honeywell Inc.
MOSFET transistor switch control
US4896061A
(en)
*
1988-12-13
1990-01-23
Siemens Aktiengesellschaft
GaAs analog switch cell with wide linear dynamic range from DC to GHz
US5153453A
(en)
*
1991-08-16
1992-10-06
International Business Machines Corp.
High voltage majority carrier rectifier
JP2833289B2
(en)
*
1991-10-01
1998-12-09
日本電気株式会社
Analog switch
US20040196089A1
(en)
*
2003-04-02
2004-10-07
O’donnell John J.
Switching device
CA2427039C
(en)
*
2003-04-29
2013-08-13
Kinectrics Inc.
High speed bi-directional solid state switch
US7480126B2
(en)
*
2005-04-27
2009-01-20
National Instruments Corporation
Protection and voltage monitoring circuit
US7457092B2
(en)
*
2005-12-07
2008-11-25
Alpha & Omega Semiconductor, Lld.
Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
JP5090008B2
(en)
*
2007-02-07
2012-12-05
三菱電機株式会社
Semiconductor device and shift register circuit
US20140029152A1
(en)
*
2012-03-30
2014-01-30
Semisouth Laboratories, Inc.
Solid-state circuit breakers
DE102015109167B3
(en)
*
2015-06-10
2016-08-11
Weetech Gmbh
Bidirectional MOSFET switch and multiplexer
Family Cites Families (4)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
US3215859A
(en)
*
1962-11-20
1965-11-02
Radiation Inc
Field effect transistor gate
BE637893A
(en)
*
1962-11-26
DE1216930B
(en)
*
1964-03-18
1966-05-18
Ibm
Transistor switch
US3386053A
(en)
*
1965-04-26
1968-05-28
Honeywell Inc
Signal converter circuits having constant input and output impedances
0
CA
CA810796A
patent/CA810796A/en
not_active
Expired
1966
1966-07-25
US
US567453A
patent/US3532899A/en
not_active
Expired – Lifetime
1967
1967-02-22
GB
GB8580/67A
patent/GB1107313A/en
not_active
Expired
1967-03-01
FR
FR8399A
patent/FR1513077A/en
not_active
Expired
1967-03-07
JP
JP42013965A
patent/JPS4824649B1/ja
active
Pending
1967-04-18
DE
DEJ33461A
patent/DE1283891B/en
not_active
Withdrawn
Also Published As
Publication number
Publication date
CA810796A
(en)
1969-04-15
JPS4824649B1
(en)
1973-07-23
US3532899A
(en)
1970-10-06
FR1513077A
(en)
1968-02-09
DE1283891B
(en)
1968-11-28
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