GB1107445A – A process for the production of selenium rectifiers
– Google Patents
GB1107445A – A process for the production of selenium rectifiers
– Google Patents
A process for the production of selenium rectifiers
Info
Publication number
GB1107445A
GB1107445A
GB18791/66A
GB1879166A
GB1107445A
GB 1107445 A
GB1107445 A
GB 1107445A
GB 18791/66 A
GB18791/66 A
GB 18791/66A
GB 1879166 A
GB1879166 A
GB 1879166A
GB 1107445 A
GB1107445 A
GB 1107445A
Authority
GB
United Kingdom
Prior art keywords
selenium
layer
thallium
counter
electrode
Prior art date
1965-04-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18791/66A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
1965-04-28
Filing date
1966-04-28
Publication date
1968-03-27
1966-04-28
Application filed by Siemens Schuckertwerke AG, Siemens AG
filed
Critical
Siemens Schuckertwerke AG
1968-03-27
Publication of GB1107445A
publication
Critical
patent/GB1107445A/en
Status
Expired
legal-status
Critical
Current
Links
Espacenet
Global Dossier
Discuss
Classifications
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
H01L21/12—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02367—Substrates
H01L21/0237—Materials
H01L21/02425—Conductive materials, e.g. metallic silicides
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02436—Intermediate layers between substrates and deposited layers
H01L21/02439—Materials
H01L21/02485—Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02436—Intermediate layers between substrates and deposited layers
H01L21/02439—Materials
H01L21/02491—Conductive materials
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02436—Intermediate layers between substrates and deposited layers
H01L21/02494—Structure
H01L21/02496—Layer structure
H01L21/02502—Layer structure consisting of two layers
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02518—Deposited layers
H01L21/02521—Materials
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02612—Formation types
H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02612—Formation types
H01L21/02617—Deposition types
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02612—Formation types
H01L21/02617—Deposition types
H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
H—ELECTRICITY
H01—ELECTRIC ELEMENTS
H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
H01L21/02104—Forming layers
H01L21/02365—Forming inorganic semiconducting materials on a substrate
H01L21/02656—Special treatments
H01L21/02664—Aftertreatments
H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Abstract
1,107,445. Selenium rectifiers. SIEMENSSCHUCKERTWERKE A.G. 28 April, 1966 [28 April, 1965], No. 18791/66. Heading H1K. In a selenium rectifier the counter-electrode and the selenium layer contain thallium in a concentration ratio of from 1 : 100 to 1 : 10 by weight. The thallium in the counter electrode prevents the migration of the thallium from the selenium layer during manufacture and use. As shown, a rectifier is produced by dusting the surface of a nickel-coated aluminium plate 1 with powdered selenium heating to form a nickel selenide layer 2, evaporating-on a selenium layer 3 containing chlorine and tellurium, pre-crystallizing this layer by tempering, evaporating on a thin selenium layer 4 containing iodine and 200 to 2000 p.p.m. thallium, and spraying-on a counter-electrode 5 of 32/68 cadmium/tin alloy containing 10 to 100 p.p.m. thallium so that the concentration ratio of the thallium in the counter electrode 5 and the selenium layer 4 is 1 : 20. The device is heated to just below the melting-point of selenium to convert the selenium into the hexagonal form and to form a layer of cadmium selenide between layers 4 and 5. The device is then electrically formed. It is stated that it is known to include thallium in the counter-electrode and in the selenium layer in a concentration ratio of about 1 : 2.5.
GB18791/66A
1965-04-28
1966-04-28
A process for the production of selenium rectifiers
Expired
GB1107445A
(en)
Applications Claiming Priority (1)
Application Number
Priority Date
Filing Date
Title
DES96804A
DE1278019B
(en)
1965-04-28
1965-04-28
Method of manufacturing a selenium rectifier
Publications (1)
Publication Number
Publication Date
GB1107445A
true
GB1107445A
(en)
1968-03-27
Family
ID=7520299
Family Applications (1)
Application Number
Title
Priority Date
Filing Date
GB18791/66A
Expired
GB1107445A
(en)
1965-04-28
1966-04-28
A process for the production of selenium rectifiers
Country Status (6)
Country
Link
AT
(1)
AT263144B
(en)
CH
(1)
CH430885A
(en)
DE
(1)
DE1278019B
(en)
ES
(1)
ES325847A1
(en)
FR
(1)
FR1498302A
(en)
GB
(1)
GB1107445A
(en)
Family Cites Families (1)
* Cited by examiner, † Cited by third party
Publication number
Priority date
Publication date
Assignee
Title
DE1125079B
(en)
*
1959-03-26
1962-03-08
Licentia Gmbh
Process for manufacturing selenium rectifiers with a divided selenium layer
1965
1965-04-28
DE
DES96804A
patent/DE1278019B/en
active
Pending
1966
1966-02-17
AT
AT144566A
patent/AT263144B/en
active
1966-03-02
CH
CH295466A
patent/CH430885A/en
unknown
1966-04-12
FR
FR57235A
patent/FR1498302A/en
not_active
Expired
1966-04-22
ES
ES0325847A
patent/ES325847A1/en
not_active
Expired
1966-04-28
GB
GB18791/66A
patent/GB1107445A/en
not_active
Expired
Also Published As
Publication number
Publication date
FR1498302A
(en)
1967-10-20
AT263144B
(en)
1968-07-10
DE1278019B
(en)
1968-09-19
CH430885A
(en)
1967-02-28
ES325847A1
(en)
1967-03-01
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